Enhancing electron field emission of carbon nanoflakes by hydrogen post-annealing process

In this study, the carbon nanoflakes (CNFs) fabricated by sputtering were chosen as the field emission emitters because of their very sharp and thin edges which are potentially good electron field emission sites. The as-deposited CNFs were annealed in the furnace under hydrogen atmosphere. The results showed that the optimum field emission properties with smaller turn-on field and larger current density were obtained at annealing temperature of 600 °C for 10 min. The hydrogen thermal annealing has chemical etching on the surface of the CNFs and produces appropriate emission site density to increase the emission current density. The turn-on field was reduced from 6.7 to 5.8 V/μm and electric current density was increased from 22 to 187 μA/cm² under 8 V/μm after hydrogen thermal annealing.     

Photoresponse of n -ZnO/ p -Si heterojunction towards ultraviolet/visible lights: thickness dependent behavior

A series of n-ZnO/p-Si thin film heterojunctions have been fabricated by a low cost sol–gel technique for different ZnO film thicknesses and the dark as well as photo current–voltage (I–V) characteristics have been investigated in details. The heterojunction with ZnO thickness of 0.46 μm shows the best diode characteristics in terms of rectification ratio, I _F/I _R = 5.7 × 10³ at 5 V and reverse leakage current density, J _R = 7.6 × 10⁻⁵ A cm⁻² at −5 V. From the photo I–V curves and wavelength dependent photocurrent of the heterojunctions, it is found that the junction with 0.46 μm ZnO thickness shows the highest sensitivity towards both UV and visible lights.     

UNCD electron emitters using Si nanostructure as a template

The electron field emission (EFE) properties of silicon nanostructures (SiNSs) coated with ultra-nanocrystalline diamond (UNCD) were characterized. The SiNS, comprising cauliflower-like grainy structure and nanorods, was generated by reaction of a Si substrate with an Au film at 1000 °C, and used as templates to grow UNCD. The UNCD films were deposited by microwave plasma-enhanced chemical vapour deposition (MPECVD) using methane and argon as reaction gases. The UNCD films can be grown on the SiNS with or without ultrasonication pretreatment with diamond particles. The EFE properties of the SiNS were improved by adding an UNCD film. The turn-on field (E₀) decreased from 17.6 V/μm for the SiNS to 15.2 V/μm for the UNCD/SiNS, and the emission current density increased from 0.095 to 3.8 mA/cm² at an electric field of 40 V/μm. Ultrasonication pretreatments of SiNS with diamond particles varied the structure and EFE properties of the UNCD/SiNS. It is shown that the ultrasonication pretreatment degraded the field emission properties of the UNCD/SiNS in this study.     

Fabrication of carbon nanofiber(CNF)-dispersed Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composites by pulsed electric-current pressure sintering and their mechanical and electrical properties

Dense Al₂O₃-based composites (≥99.0% of theoretical) dispersed with carbon nanofibers (CNFs) were fabricated using the pulsed electric-current pressure sintering (PECPS) for 5 min at 1300°C and 30 MPa in a vacuum. The dispersion of CNFs into the matrix depended much on the particle size of the starting Al₂O₃ powders. Mechanical properties of the composites were evaluated in relation with their microstructures; high values of three-point bending strength σ_b (∼800 MPa) and fracture toughness K _IC (∼5 MPa·m^1/2) were attained at the composition of CNF/Al₂O₃ = 5:95 vol%, which σ_b and K _IC values were ∼25% and ∼5%, respectively, higher than those of monolithic Al₂O₃. This might be due to the small Al₂O₃ grains (1.6 μm) of dense sintered compacts compared with that (4.4 μm) for the pure Al₂O₃ ceramics, resulting from the suppression of grain growth during sintering induced by uniformly dispersed CNFs in the matrix. Electrical resistivity of CNF/Al₂O₃ composites decreased rapidly from >10¹⁵ to ∼2.1 × 10⁻² Ωm (5vol%CNF addition), suggesting the machinability of Al₂O₃-based composites by electrical discharge machining.

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Effect of sintering process on electrical properties and ageing behavior of ZnO–V2O5–MnO2–Nb2O5 varistor ceramics

The effect of sintering process on microstructure, electrical properties, and ageing behavior of ZnO–V₂O₅–MnO₂–Nb₂O₅ (ZVMN) varistor ceramics was investigated at 875–950 °C. The sintered density decreased from 5.52 to 5.44 g/cm³ and the average grain size increased from 4.4 to 9.6 μm with the increase of sintering temperature. The breakdown field (E_{1 mA}) decreased from 6991 to 943 V/cm with the increase of sintering temperature. The ZVMN varistor ceramics sintered at 900 °C led to surprisingly high nonlinear coefficient (α = 50). The donor concentration (N_d) increased from 3.33 × 10¹⁷ cm⁻³ to 7.64 × 10¹⁷ cm⁻³ with the increase of sintering temperature and the barrier height (Φ_b) exhibited the maximum value (1.07 eV) at 900 °C. Concerning stability, the varistors sintered at 925 °C exhibited the most stable accelerated ageing characteristics, with %ΔE_{1 mA} = 1.5% and %Δα = 13.3% for DC accelerated ageing stress of 0.85 E_{1 mA}/85 °C/24 h.     

Dielectric and non-Ohmic properties of CaCu3Ti4O12 ceramics modified with NiO, SnO2, SiO2, and Al2O3 additives

In order to conciliate dielectric and non-Ohmic properties of CaCu₃Ti₄O₁₂ (CCTO) ceramics, NiO, SnO₂, SiO₂, and Al₂O₃ were added as sintering aids to promote the grain growth of CCTO ceramics. Microstructure, dielectric properties, and non-Ohmic behavior of the CCTO ceramics were investigated. Among them, NiO-modified CCTO exhibits good dielectric and non-Ohmic properties (ε = 69833, tanδ = 0.073, α = 3.66 and E _B = 296.7 V/cm), due to NiO is also one of giant dielectric materials. Therefore, it is suitable for applying semiconductor circuits. The relationship between electrical current density (J) and electrical field (E) demonstrated that Schottky barrier should exist at grain boundaries. Non-linear coefficient α was directly proportional to the height of barrier. Depressing barrier width would improve significantly dielectric permittivity but decrease breakdown voltage.     

Selective growth of well-aligned carbon nanotubes by APCVD

Well-aligned good-quality carbon nanotube (CNT) array was grown on silicon substrate by atmospheric pressure chemical vapor deposition (APCVD) through SiO₂ masking. First, the patterned substrate was pretreated with NH₃ and then CNTs were synthesized at 800 °C using Ni as the catalyst, acetylene (C₂H₂) as the carbon source material and N₂ as the carrier gas. Effects of the NH₃-pretreatment time, the flow ratio of [C₂H₂]/[NH₃] and the CNT growth time on the qualities of CNT array were analyzed in detail. It was found that good-quality CNTs with an average length of around 15 μm could be grown by pretreating the Si substrate with NH₃ for 10 min and then conducting the CNT growth with a flow ratio of [C₂H₂]/[NH₃] = 30/100. Furthermore, the field emission property of CNT array was investigated using a diode structure. It was found that the turn-on electric field decreased with increasing CNT length. The turn-on electric field as low as about 2 V/μm with an emission current density of 10 μA/cm² was achieved for a CNT-array diode with the tube length near 18 μm. For the same device, the emission current density could be elevated to 10 mA/cm² with the applied voltage of 3.26 V/μm.     

Study on electron field emission enhancement from nitrogenated carbon nanotips synthesized by plasma-enhanced hot filament chemical vapor deposition

Nitrogenated carbon nanotips (NCNTPs) with different structures were synthesized by plasma-enhanced hot filament chemical vapor deposition using methane, hydrogen and nitrogen as the reactive gases. The structures and compositions of the NCNTPs were studied by field emission scanning electron microscopy (FESEM), micro-Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The XPS spectra reveal that nitrogen is incorporated into the carbon nanotips to form the NCNTPs under plasma condition. The Raman spectra and FESEM images show that the NCNTPs are amorphous structure and their morphologies change with the change in deposition conditions, respectively. The electron field emission (EFE) from the NCNTPs was measured and the EFE results indicate that the NCNTPs with the smooth surfaces and high density can emit a current density of 3 × 10³ μA/cm² at an electric field of 7.2 V/μm, which exhibits better EFE characteristic than the NCNTPs with the carbon nanowires on their surfaces due to small amount of oxygen adsorbed on the smooth surfaces of NCNTPs. According to the possible structures of nitrogen in sp² cluster in rings, the EFE enhancement of the NCNTPs compared with pure carbon nanotips was studied. The high emission current density (3 × 10³ μA/cm²) at low field (7.2 V/μm) suggests that the NCNTPs can serve as effective electron emission sources for numerous applications.     

Effects of Nb doping on microstructure and properties of Bi4Ti3?xNbxO12 thin films prepared by magnetron sputtering

Bi₄Ti_3−xNb_xO₁₂ ferroelectric thin films were fabricated on p-Si substrates by magnetron sputtering. The effects of Nb doping on microstructure and properties of Bi₄Ti_3−xNb_xO₁₂ films were investigated. Bi₄Ti_3−xNb_xO₁₂ films had the same structure as Bi₄Ti₃O₁₂ with smaller and more uniform grains. The dielectric and ferroelectric properties of Bi₄Ti_3−xNb_xO₁₂ films were improved by Nb doping. Bi₄Ti_3−xNb_xO₁₂ films have better dielectric and ferroelectric properties with P _r = 16.5 μC/cm², E _C < 100 kV/cm, ε _r > 290, low dielectric loss (<0.9%) and clockwise C–V curves with a memory window of 0.9 V when x = 0.03–0.045, while an excessive Nb doping would lead to bad dielectric and ferroelectric properties.     

Mobility of Electrons at Liquid Helium Surface under Overheating

Mobility of surface electrons (SE) on liquid helium at low temperatures (T≃0.52 K) is studied as a function of the driving electric field E _∥ in the range 1–25 mV/cm. The experimental conditions correspond approximately to effective electron temperatures T _e ≃1–12 K. The measurements are performed for SE with the surface electron density n _s =1.46×10⁸ cm⁻² at different holding electric fields E _⊥ =200–1400 V/cm. The mobility is observed to be an increasing function of the driving field. The function depends strongly on the holding electric field applied. The experimental results are in reasonable agreement with theoretical curves calculated using the force-balance equation method expressing the mobility in terms of the dynamical structure factor of SE.     

Effect of V substitution on microstructure and ferroelectric properties of Bi<Subscript>3.6</Subscript>Ho<Subscript>0.4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films prepared by sol–gel method

Bi_3.6Ho_0.4Ti₃O₁₂ and (Bi_0.9Ho_0.1)_4−x/3Ti_3−x V _x O₁₂ (BHTV) (x = 0.3, 1.2, 3.0 and 6.0%) thin films were prepared on Pt/Ti/SiO₂/Si substrates by sol–gel method. The effect of V content on their microstructure and ferroelectric properties were investigated. All the BHTV samples consisted of the single phase of Bi-layered Aurivillius phase. The B-site substitution with high-valent cation of V⁵⁺, in Bi_3.6Ho_0.4Ti₃O₁₂ films, enhanced the remanent polarizations (2P_r) and reduced the coercive field (2E_c). The BHTV film with x = 0.3% exhibited the better electrical properties with 2P_r 45.5 μC/cm², 2E_c 257 kV/cm, good insulting behavior, as well as the fatigue-free characteristic.     

Ferroelectric and dielectric properties of Bi4-xNdxTi3O12 thin films prepared by sol–gel method

Bi_4-xNd_xTi₃O₁₂ (BNT-x, x = 0, 0.25, 0.50, 0.75 and 1.0) thin films were prepared on Pt/Ti/SiO₂/Si substrates by a sol–gel method. The microstructure, ferroelectric and dielectric properties of BNT-x thin films were investigated. The single-phase BNT-x thin films were obtained. With increasing Nd content, the preferred orientation changed from random to (117) and surface morphologies changed from the mixture of rod- and plate-like grains to rod-like grains. The Nd substitution improved the ferroelectric and dielectric properties of BTO films. BNT-x films showed better electrical properties at x = 0.50—1.0. BNT-0.75 film exhibited the best electrical properties with remanent polarization (2P _r) of 26.6 μC/cm², dielectric constant (ε _r) of 366 (at 1 MHz), dielectric loss (tanδ) of 0.034 (at 1 MHz), leakage current density (J) of ±3.0 × 10⁻⁶ A/cm² (at ± 5 V) and fatigue-free characteristics.     

The Influence of Temperature Distribution on YBCO Coated Conductor Deposited by Reel-to-Reel PLD Method

It is known that the tape’s temperature controlled by a close substrate heater will still deviate after the deposition process. In this work, we deposited YBa₂Cu₃O_7−δ (YBCO) films on RABiTS substrates with multilayer CeO₂/YSZ/CeO₂ buffer layers by pulsed laser deposition (PLD) under a different distribution of temperature deviation in order to improve it. Thermocouples were applied to exactly measure the temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to inspect c-axis oriented crystals and surface morphology of YBCO films. Through this work, we found that the even shape is best. Under the temperature deviation with the best shape, a transport J _c of 3.2×10⁶ A/cm² and I _c =240 A was obtained for a 0.75 μm thick YBCO film on CeO₂/YSZ/CeO₂-bufferd RABiTS Ni–W alloy.     

Preparation and field emission properties of titanium polysulfide nanobelt films

TiS₃ nanobelt films, with widths of about 0.1–12 μm, thickness of about 20–250 nm, and lengths of up to 200 μm, have been grown on Ti substrates by a surface-assisted chemical-vapor-transport at 450 °C for 8 h. The TiS₃ nanobelt films were converted into TiS_1.71 nanobelt films by pyrolysis in a vacuum at 600 °C for 2 h. The work functions of the two films were determined by ultraviolet photoelectron spectroscopy measurements to be 4.60 and 4.44 eV, respectively. Preliminary field emission experiments using the nanostructures as cold electron cathodes showed that both materials gave significant emission currents. The turn-on fields (defined as the electric field required to produce a current density of 10 μA/cm₂) were about 1.0 and 0.9 V/μm, respectively, whereas the threshold fields (defined as the electric field required to produce a current density of 1 mA/cm₂) were about 5.6 and 4.0 V/μm, respectively. These data reveal that both materials have potential applications in field emission devices. This article is published with open access at Springerlink.com     

Hydrothermal synthesis and luminescence properties of core-shell-structured PS@SrCO<Subscript>3</Subscript>:Tb<Superscript>3+</Superscript> spherical particles

Nanocrystalline SrCO₃:Tb³⁺ phosphor layers were coated on monodisperse and spherical polystyrene particles by a typical hydrothermal synthesis without further annealing treatment, resulting in the formation of core-shell-structured polystyrene@SrCO₃:Tb³⁺ particles. X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, photoluminescence, as well as lifetimes were employed to characterize the resulting composite particles. Under ultraviolet excitation, the polystyrene@SrCO₃:Tb³⁺ phosphors show the characteristic ⁵D₄–⁷F _J (J = 6, 5, 4, 3) emission lines with green emission ⁵D₄–⁷F₅ (544 nm) as the most prominent group. The obtained core-shell phosphors are potentially applied in fluorescent lamps.     

Structural, optical, and electric properties of BNT–BT0.08 thin films processed by sol–gel technique

Thin films with the composition [(Bi_0.5Na_0.5)TiO₃]_0.92–[BaTiO₃]_0.08 (hereafter BNT–BT_0.08) were deposited on Pt–Si by spin-coating from a stable sol precursor. The BNT–BT_0.08 film, crystallized on the Bi_0.5Na_0.5TiO₃ rhombohedral lattice, was obtained after annealing the film-gel at 700 °C. The films have a smooth surface (Rms = 2.76 nm) and grains with ferroelectric domains. The film showed a bandgap of 3.25 eV and a refractive index of 2.20 at a wavelength of 630 nm. The dielectric characteristics of BNT–BT_0.08 thin films were measured at room temperature and 10 kHz the dielectric constant (ε _r) was 243 and the loss tangent (tanδ) was 0.38. The remnant polarization (P _r) was 0.87 μC/cm² and the coercive field (E _c) was 220 kV/cm at 10 kHz and room temperature. The current density was approximately 2.7 × 10⁻⁵ A/cm² at low electric fields (100 kV/cm). BNT–BT_0.08 thin films shown piezoelectric properties (d _33eff = 100 pm/V) comparable to those of PZT thin films.     

Influence of temperature gradient and growth rate on the mechanical properties of directionally solidified Sn–3.5 wt% Ag eutectic solder

The Sn–3.5 wt% Ag eutectic alloy was directionally solidified upward with a constant growth rate (V = 16.5 μm/s) at different temperature gradients (G = 1.43–4.28 K/mm) and with a constant temperature gradient (G = 3.93 K/mm) at different growth rates (V = 8.3–500 μm/s) in a Bridgman-type directional solidification furnace. The rod spacings (longitudinal section, λ _L and transverse section, λ _T ) and mechanical properties (microhardness, HV and ultimate tensile strength, σ _UTS ) of Sn–3.5 wt% Ag eutectic alloy were measured. The dependency of the microhardness, ultimate tensile strength on the temperature gradient, growth rate and rod spacings were determined. According to experimental results, the microhardness and ultimate tensile strength of the solidified samples increase with increasing G and V, but decrease with the increasing the rod spacing.     

Corrosion study of single crystal Ni–Mn–Ga alloy and Tb<Subscript>0.27</Subscript>Dy<Subscript>0.73</Subscript>Fe<Subscript>1.95</Subscript> alloy for the design of new medical microdevices

Once placed in a magnetic field, smart magnetic materials (SMM) change their shape, which could be use for the development of smaller minimally invasive surgery devices activated by magnetic field. However, the potential degradation and release of cytotoxic ions by SMM corrosion has to be determined. This paper evaluates the corrosion resistance of two SMM: a single crystal Ni–Mn–Ga alloy and Tb_0.27Dy_0.73Fe_1.95 alloy. Ni–Mn–Ga alloy displayed a corrosion potential (E _corr) of −0.58 V/SCE and a corrosion current density (i _corr) of 0.43 μA/cm². During the corrosion assay, Ni–Mn–Ga sample surface was partially protected; local pits were formed on 20% of the surface and nickel ions were mainly found in the electrolyte. Tb_0.27Dy_0.73Fe_1.95 alloy exhibited poor corrosion properties such as E _corr of −0.87 V/SCE and i _corr of 5.90 μA/cm². During the corrosion test, this alloy was continuously degraded, its surface was impaired by pits and cracks extensively and a high amount of iron ions was measured in the electrolyte. These alloys exhibited low corrosion parameters and a selective degradation in the electrolyte. They could only be used for medical applications if they are coated with high strain biocompatible materials or embedded in composites to prevent direct contact with physiological fluids.     

Effect of seed layer on the ferroelectric properties and leakage current characteristics of sol–gel derived vanadium doped PbZr0.53Ti0.47O3 films

In this paper, we report the ferroelectric properties and leakage current characteristics of vanadium-doped PbZr_0.53Ti_0.47O₃ (PZTV) films grown on various seed layers prepared by a sol–gel process. The PZTV multilayered film of ~250-nm-thick showed excellent ferroelectric properties, with a large remnant polarization (P _r) of ~30 μC/cm² (E _c ~ 90 kV/cm), a high saturation polarization (P _s) of ~85 μC/cm² for an applied field of 1,000 kV/cm, fatigue-free characteristics of up to ≥ 10¹⁰ switching cycles, and a low leakage current density of 7 × 10⁻⁸ A/cm² at 100 kV/cm. X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) investigations indicated that PZTV films grown on PbZr_0.53Ti_0.47O₃/PbLa_0.05TiO₃ (PZT/PLT) seed layers exhibited a dense, well-crystallized microstructure with random orientations and a rather smooth surface morphology.     

Enhanced and stable electron emission of carbon nanotube emitter arrays by post-growth hydrofluoric acid treatment

Carbon nanotubes (CNT) have been highlighted as possible candidates for field-emission emitters and vacuum nanoelectronic devices. In this article, we studied the effect of acid treatment of CNTs on field emission from carbon nanotube field emitter arrays (FEAs), grown using the resist-assisted patterning process (RAP). The emission current densities of as grown CNT-FEAs and those which were later immersed in hydrofluoric acid (HF) for 20 s, were 19 μA/cm² and 7.0 mA/cm², respectively, when measured at an anode field of 9.2 V/μm. Hence, the emission current densities after HF treatment are 300 times larger than those of as grown CNT-FEAs. Also, it was observed that a very stable electron emission current was obtained after stressing the CNTs with an electric field of 9.2 V/μm for 800 min in dc-mode, where the emission current non-uniformity was 0.13%. The enhancement in electron emission after HF treatment appears to be due to the effect of fluorine bonding. Also, the electron emission characteristics and structural improvement of CNT-FEAs after HF treatment are discussed.