5G边缘计算组网关键技术研究

为了满足边缘计算的需求,需要5G网络具备相应的业务分流能力.通过对MEC系统结构的梳理,对MEC应用场景进行了归类,通过对多种5G PDU会话建立及业务分流技术的对比分析,介绍了对应各类MEC应用场景的5G UL CL分流组网技术和多DNN组网技术,并指出了现有5G分流技术的不足之处,最后介绍了5G UPF下沉的部署方...     

5G+MEC技术在智慧工厂组网中的应用分析

随着5G技术的快速发展和智慧工厂的兴起,5G与MEC（边缘计算）技术成为智慧工厂组网的主要技术选择。文章阐述了5G与MEC技术在智慧工厂组网中的应用,重点探讨了这两种技术的优势及其在智慧工厂中的应用场景,包括生产流程控制、设备管理、物流管理等。同时对5G+MEC汽车制造工厂组网案例进行描述,最后分析了5G+MEC组网技术在智慧工厂中面临的挑战及其解决方案,对慧工厂的建设和发展具有借鉴意义。     

关于5G+MEC网络建设模式的探讨

MEC技术是把云计算从核心侧迁移到接入边缘、就近提供服务的网络架构,与5G技术结合为无人驾驶、智慧制造等前沿产业提供基础网络.本文通过对MEC应用场景及目标客户的分析,提出5G+MEC建设思路,并针对业务特性要求,对网络部署模式进行探讨,为5G+MEC网络大规模建设提供参考建议.     

面向5G的边缘云部署方案探讨

针对5G的业务需求和网络特点、详细分析5G MEC(移动边缘计算)网络架构和不同场景下的MEC部署策略及部署原则.并结合5G典型应用场景、网络架构演进、5G MEC融合架构等基础网络理论,探讨5G不同应用场景下MEC部署方案,给出典型场景下的MEC部署解决方案.     

智能高铁中的5G技术及应用

介绍了面向智能高铁的5G场景及业务需求,并针对场景及业务分析了适用于智能高速铁路的大规模天线(MIMO)、超可靠低时延、大规模接入等5G关键技术。同时给出了3种智能高铁中的5G应用案例:5G智慧车站应用、5G物联网应用以及5G移动边缘计算(MEC)应用。认为5G多种关键技术将会为未来实现高速铁路的智能升级提供了有力的支撑。     

5G MEC UPF选择及本地分流技术分析

边缘计算的本质是一场架构革命,为满足超低时延和超大带宽等业务需求,应用从传统Client-Server架构转向Client-Edge-Server三级架构,实现云网融合。在5G网络中,如何为边缘应用选择合适的UPF,实现高效的本地分流成为关键问题。为解决这个问题,分析了采用5G核心网基于UL CL上行分流、IPv6多归属或者LADN本地数据网策略为MEC选择UPF,以及MEC上的应用能够通过MEC与5G核心网控制面交互,动态或半动态选择UPF的本地分流方法。研究表明,通过上述方法,可实现MEC UPF的灵活选择及本地高效分流。     

基于5G+MEC的多校区智慧校园协同生态建设

随着教育新基建工作的逐步进行,5G新型网络的建设对智慧校园生态变革提供了有力保障,以网络为基础、数据物联资源流动为特征,形成一体化生态圈.文章基于5G+MEC技术特点以及智慧校园创新应用现状,分析校园生态建设的网络一体化、物联一体化、数据一体化以及资源一体化等内涵特征,总结以"5G+MEC"为核心的新技术形态、以"实时...     

边缘计算中的网络建设需求分析

文章系统介绍了移动边缘计算关键技术,详细分析了MEC网络平台架构及功能,对于典型与应用场景中的数据分流业务进行了论述和介绍。在5G网络应用中,MEC技术通过为移动网边缘,无线接入网提供IT服务,同时提供强大的云计算能力,满足了本地化业务、近距离部署的功能要求,极大地提高了用户体验。     

基于专用DNN的5G双域专网校园网部署方案

传统校园网络用户存在难以接入校园内网、访问校园内网数据资源易断开、需要频繁切换等问题，在5G SA网络能够灵活组网满足不同差异化需求的情况下，希望能够基于5G网络，在校园内外的任何地方使用移动终端通过5G网络安全方便地访问校园内外的网络。部署基于专用DNN的5G双域专网的校园网，只要校园用户完成在网络中的签约，就可以实现基于5G大带宽和低时延的安全高效校园内网资源访问，同时还可以根据应用场景访问公共网络，不影响内网的访问。经信令跟踪并分析验证，5G双域专网技术方案能实现高校用户的4G/5G融合场景下省内/省际漫游下内外网流量的无感切换。通过在某高校5G双域专网的部署验证成功，证明5G双域专网应用解决方案能够满足绝大多数5G专网内外网访问的业务需求。     

面向5G网络的MEC部署方案

多接入边缘计算技术通过将计算存储能力与业务服务能力向网络边缘迁移,使应用、服务和内容可以实现本地化、近距离、分布式部署,从而在一定程度上解决了5G增强移动宽带、低时延高可靠以及大规模机器通信类终端连接等场景的业务需求.本文在分析MEC技术在LTE网络中的应用方案以及对于5G网络的价值与意义的基础上,给出了5G MEC部...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.