水热法制备高定向掺铝氧化锌纳米棒阵列

为了制备高定向光电性能优异的掺铝氧化锌(ZAO)纳米棒阵列,采用溶胶-凝胶法在玻璃基片上制备掺铝氧化锌薄膜,以ZAO薄膜为种子层,通过控制掺铝量、稳定荆等工艺参数,采用水热法制备出了高定向ZAO纳米棒阵列.实验表明,铝掺杂量为2%,直径在50nm左右的ZAO纳米棒阵列薄膜具有最好的光致发光性能,表面活性剂可以促进ZAO纳米结构的棒状生长,形成高定向ZAO纳米棒阵列.     

ZnO水热膜的形貌调控及光电性能

在硝酸锌/(NH_2)_6N_4(HMTA)溶液体系中加入浓氨水及氯化铜,采用水热法制备Cu掺杂的ZnO薄膜。研究发现,氨水和Cu~(2+)离子均可抑制ZnO纳米棒的横向生长,促进纳米棒沿c轴取向生长,增加长径比,但并未发现Cu进入ZnO晶格中。ZnO水热阵列膜的形貌可以通过同时掺杂Cu2+和加入浓氨水来改变。Cu~(2+)离子和氨水共掺杂容易导致ZnO纳米棒的弯曲及纳米棒端头的聚集,形成由纳米棒团簇组成的星星状薄膜表面。PL谱显示,该结构具有较大的氧空位缺陷浓度及比表面积,并具有一定的场发射特性,场增强因子β为5990。     

垂直生长于锌基底的Co掺杂ZnO纳米棒阵列显著室温铁磁性能（英文）

通过简单的水热合成法在锌片基底上一步制备了Co掺杂的ZnO纳米棒阵列。纳米棒在基底上均匀分布,取向一致,垂直于基底大面积生长。样品结构均为六方纤锌矿结构,具有高结晶质量,不含其它杂相。随着Co掺杂浓度的增加,紫外发射峰强度逐渐下降,近带隙发射峰的半峰宽也较纯ZnO变宽。拉曼光谱显示Co的掺杂使纳米棒出现了氧空位和锌填隙本征缺陷。随着Co浓度的增加这些缺陷也随之增加。掺杂纳米棒阵列的磁滞回线表明样品具有明显的铁磁特征,并有较大的矫顽力H c=52.8 k A/m。这种ZnO基稀磁半导体纳米棒阵列是一种在自旋电子器件中具有应用潜力的纳米材料。     

钽表面铜掺杂Ta2O5纳米棒的制备及抗菌性能研究

本实验采用两步水热法在钽基体表面制备出掺杂Cu_²⁺的Ta₂O₅纳米棒薄膜。采用XRD、SEM、XPS等方法分析了材料的物相和表面微观结构。用ICP检测了样品在生理盐水中离子析出浓度,最后通过平板计数法检验了不同含量铜掺杂Ta₂O₅薄膜的抗菌能力。结果表明,通过两步水热处理,在钽表面生成了简单斜方晶体结构的Ta₂O₅纳米棒阵列,Cu_²⁺的掺杂不会对纳米棒薄膜的微观形貌和物相造成显著影响。随时间的增加,掺铜薄膜的铜离子析出速率逐渐趋于平缓。平板计数法表明,Cu_²⁺ 的掺杂量达到2.68At%时,铜掺杂Ta₂O₅纳米棒薄膜的抗菌性能最好,抗菌率达99.2%。     

垂直生长于锌基底的Co掺杂ZnO纳米棒阵列显著室温铁磁性能

通过简单的水热合成法在锌片基底上一步制备了Co掺杂的ZnO纳米棒阵列。纳米棒在基底上均匀分布,取向一致,垂直于基底大面积生长。样品结构均为六方纤锌矿结构,具有高结晶质量,不含其它杂相。随着Co掺杂浓度的增加,紫外发射峰强度逐渐下降,近带隙发射峰的半峰宽也较纯ZnO变宽。拉曼光谱显示Co的掺杂使纳米棒出现了氧空位和锌填隙本征缺陷。随着Co浓度的增加这些缺陷也随之增加。掺杂纳米棒阵列的磁滞回线表明样品具有明显的铁磁特征,并有较大的矫顽力Hc~660 Oe。这种ZnO基稀磁半导体纳米棒阵列是一种在自旋电子器件中具有应用潜力的纳米材料。     

水热法制备新型TiO_2薄膜及其机理

用酞酸丁酯和盐酸通过两步水热法制备了一种新型双层Ti O2薄膜。其水热过程包括生长过程和刻蚀过程。在生长过程制备了一种上层为纳米棒团簇,下层为纳米棒阵列的双层结构。在随后的刻蚀过程中,上层的纳米棒团簇转变为纳米管团簇,下层的纳米棒阵列转变为直径在20~25 nm的纳米线阵列。刻蚀过程上下两层出现不同形貌的主要原因为金红石相Ti O2的各向异性以及纳米棒外壁和内部的不同界面能。新型薄膜作为染料敏化太阳能电池的光阳极时能量转换效率高。     

纳米氧化锌生长研究喜获进展

中科院力学所科研人员利用气相沉积的方法，成功合成了多种形貌的微纳米ZnO材料，比如纳米线、纳米棒、纳米锥、四足纳米ZnO等，还实现了纳米ZnO在碳纳米管上的直接生长，并制备出多种独特形貌的ZnO微纳米材料，通过这种方法合成出来的材料具有很强的发光性能和催化活性。     

氧化锌纳米棒的水热法制备和抑菌性能的研究（英文）

采用水热法制备了ZnO纳米棒。采用琼脂稀释法研究商业纳米ZnO颗粒和水热法制备纳米ZnO棒对大肠杆菌抑菌作用的差异性。利用透射电镜、X射线衍射仪、比表面积测试仪、对大肠杆菌最小抑菌浓度进行表征。结果表明:ZnO纳米棒的粒径(约96 nm)比商业颗粒纳米ZnO(约185 nm)要小的多,ZnO纳米棒衍射峰宽值相对于商业ZnO纳米颗粒的要更宽,晶粒度更小(根据谢乐公式ZnO为98.203l nm,商业ZnO为189.3206,nm);.ZnO纳米棒(5.4759 m~2/m)的比表面积比商业ZnO纳米颗粒(3.6081 m~2/g)的更大,依据抗菌性原理,这两种指标皆表明ZnO纳米棒的抗菌性能相对较好,在最小抑菌浓度试验中,商业氧化锌纳米颗粒和水热法制备氧化锌纳米棒的最小抑菌浓度分别为0.22%和0.12%;ZnO纳米棒对大肠杆菌的抑制作用高于商业ZnO纳米颗粒对其的抑制作用。     

预沉积ZnO薄膜对ZnO−MoS2/ZnO复合涂层结构与性能影响

目的 通过优化原子层沉积工艺获取不同厚度ZnO薄膜,研究ZnO薄膜晶体取向对ZnO?MoS2涂层生长结构的影响,获得具有优异摩擦学性能的ZnO?MoS2/ZnO复合涂层。方法 采用原子层沉积法在不锈钢基体上预沉积不同厚度的ZnO薄膜,再用射频磁控溅射技术继续沉积ZnO?MoS2涂层,制备ZnO?MoS2/ZnO固体润滑复合涂层。结果 X射线衍射分析发现,预沉积ZnO薄膜有诱导后续ZnO?MoS2涂层沉积生长的作用,预沉积100 nm厚ZnO薄膜的ZnO?MoS2/ZnO复合涂层显示出宽化的MoS2 (002)馒头峰,其截面形貌显示为致密的体型结构,获得的摩擦因数最低(0.08),纳米硬度最高(2.33 GPa),硬度/模量比显示该复合涂层的耐磨损性能得到提升;X射线光电子能谱分析结果表明,复合涂层表面游离S与空气中水发生反应程度大约为原子数分数5%,显示复合涂层耐湿性能较好;基于原子层沉积ZnO薄膜生长及其对后续ZnO?MoS2涂层生长的影响分析,提出了ZnO?MoS2/ZnO复合涂层磨损模型,阐明了ZnO薄膜对复合涂层结构及摩擦学性能的影响,并以该模型解释了200 nm厚 ZnO薄膜上沉积ZnO?MoS2涂层出现的摩擦因数由高到低的变化趋势及最终磨损失效现象。结论 合适的原子层沉积制备的ZnO薄膜有利于MoS2 (002)取向生长,可有效提升ZnO?MoS2/ZnO复合涂层的摩擦学性能;控制ZnO薄膜厚度,可实现ZnO薄膜与基底及ZnO?MoS2层间界面之间的优化结合,以制得具有较好摩擦学性能及使用寿命的ZnO?MoS2/ZnO复合涂层。     

p–GaN/ZnO纳米线/ZnO薄膜三明治异质结紫外光电探测器光电性能

目的 通过设计一种新型p–GaN/ZnO(薄膜+纳米线)三明治异质结结构,提高ZnO对紫外光的响应。方法 利用化学气相沉积(CVD)方法,在蓝宝石/GaN衬底上生长出纳米线+薄膜交错排列的ZnO,得到具有三明治结构的p–GaN/ZnO材料。通过旋涂Ag纳米线(NWS)、滴银胶为电极,制备三明治结构的异质结紫外(UV)光电探测器。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)表征物相及形貌;利用光致发光(PL)和拉曼(Raman)光谱分析晶体结晶情况;利用半导体分析测试仪对该三明治异质结UV光电探测器进行光电性能测试,得到其光电性能变化规律。结果 该三明治结构光电探测器顶部为ZnO薄膜,中间为ZnO NWS与纳米片交错排列分布,底部为GaN。这种二维(2D)/一维(1D)/2D结构使入射光在结构内多次反射和散射,提高了光程长度,进而提高了光吸收。另外,由于p–GaN和n–ZnO形成PN结,在内建电场作用下,可以有效提高光生电子–空穴分离效率。光电性能测试结果表明,在偏压2 V、光功率密度520 μW/cm²(365 nm)条件下,响应度(R)为35.8 A/W,上升时间(tr)为41.83 ms,下降时间(td)为43.21 ms,外量子效率(Eq)为122%,比探测率(D^*)为1.31×10¹² cm.Hz^1/2.W⁻¹。结论 通过一步CVD法制备新型p–GaN/ZnO纳米线/ZnO薄膜三明治结构UV光电探测器,可以有效提高ZnO对紫外光的响应,为探索新式结构光电探测器提供可能。     

钛基表面PDLLA/ZnO纳米阵列材料的制备及生物学性能

采用水热生长法,在钛基表面制备高度有序、尺寸可控的氧化锌纳米棒阵列,再通过静电吸附的方法在其表面自组装一层具有良好生物相容性的聚乳酸生物涂层。利用SEM,MTT,LDH方法对细胞形态和生物活性进行表征。结果表明,氧化锌阵列上细胞形态呈圆形,无铺展现象。而经聚乳酸修饰过的材料表面MC3T3细胞外基质铺展较好,细胞分泌的丝状伪足嵌入了阵列结构的空隙中,并且表面细胞数量最多,细胞活性明显高于氧化锌纳米棒及纯钛片。结果表明,聚乳酸涂层提高了氧化锌阵列的生物相容性,为细胞生长提供适宜的微环境,有效促进了细胞的黏附与增殖。     

Formation of ZnO nanorod arrays on polytetraflouroethylene (PTFE) via a seeded growth low temperature hydrothermal reaction

ZnO nanorod arrays were formed by a low temperature hydrothermal process on seeded polytetraflouroethylene (PTFE) sheets. The seed layer was formed using thermal oxidation of a thin evaporated Zn film on the PTFE sheet at 300 °C in air for 10 min. The formation of ZnO nanorod arrays in the hydrothermal reactive bath consisting of hexamethylamine (HMT) and Zn ions occurred via the reaction of hydroxyl ions released during the thermal degradation of HMT with the Zn ions. The seed layer provided a template for the nucleation of the ZnO and HMT which also acted as a chelating agent that promoted growth of the ZnO along the c-axis, leading to the formation of exclusively (0 0 2) ZnO nanorods. The effect of exposure time of the seeded PTFE to the reactive solution on the formation of the nanorods was investigated. Well aligned, relatively uniform tapered 300 nm long nanorods can be formed after 8 h of exposure. Longer exposure times to 24 h resulted in the formation of more uniform nanorods with base diameter averaged of ∼100 nm and the tip diameter of ∼50 nm. XRD analysis showed that the ZnO nanorod array had a hexagonal wurtzite structure. This result is in agreement with HR-TEM observations and Raman scattering analysis. Photoluminescence study showed that a strong UV emission peak was obtained at 380 nm and a small peak at 560 nm, which is associated with green emission. The optical band gap measured from these plots was at 3.2 eV on average.     

The effect of seed layer on morphology of ZnO nanorod arrays grown by hydrothermal method

Well-aligned ZnO nanorod arrays were synthesized by hydrothermal method on Si substrates that were covered with pre-deposited ZnO films as seed layers. The ZnO seed layers were deposited by RF magnetron sputtering. It is found that the seed layers prepared under different oxygen partial pressure sputtering parameters and annealing treatment have a great influence on the morphology of the ZnO nanorod arrays grown subsequently on them. Furthermore, growth positions of nanorod/microrod arrays were selectively controlled on the lithography-assist ZnO seed layer.     

Effect of polyethyleneimine on the growth of ZnO nanorod arrays and their application in dye-sensitized solar cells

A series of oriented hexagonal wurtzite ZnO nanorod-array films were grown on fluorine-doped tin oxide (FTO) coated glass substrates by chemical process. The effect of polyethyleneimine (PEI) on the structure and micro-morphology of ZnO nanorod array films, as well as the photoelectric conversion properties in dye-sensitized solar cells (DSSCs) was analyzed. It was found that with the addition of PEI in growth solution, the ZnO nanorods became smaller in diameter and longer in length and hence the dye absorption and the photovoltaic performance of DSSCs were improved. A power conversion efficiency of 2.30% had been achieved on a DSSC based on a 7.9 μm-long nanorod array film prepared by a growth solution containing the PEI.     

Growth of ZnO nanorod arrays on soft substrates by hydrothermal process

ZnO nanorod arrays with quite homogeneous size and shape were fabricated by introducing ZnO seed-layer as nucleation centers on the soft ITO substrates prior to the hydrothermal reaction. The samples were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction and photoluminescence method. After the ZnO seed-layer is introduced, the resulting deposits on the substrates develop into nanorods, and the diameter decreases obviously to about 100 nm. Influences of the coated nanocrystal seed nuclei on the morphology of ZnO nanorod arrays were discussed. The results show that each nanorod is monocrystalline with wurtzite-type structure and oriented in c-axis direction. The increase of the intensity ratio of ultraviolet to visible emissions in room-temperature photoluminescence spectra and the decrease of the ultraviolet PL linewidths show the improvement of the quality of ZnO nanorods. A simple and effective method to synthesize ZnO nanorod arrays with fairly uniform size and shape on soft substrates is dip-coating ZnO nanocrystals prior to hydrothermal reaction, and it may be also feasible for the fabrication of other small-size metal oxide nanostructures on soft substrates.     

SnS / ZnO 叠层太阳能电池的制备及性能研究

目的获得光电性能较佳的Sn S/Zn O叠层太阳能电池。方法通过磁控溅射法,采用不同的溅射参数在FTO玻璃上制备Sn S和Zn O薄膜,研究Sn S和Zn O薄膜的晶体结构、表面形貌和光学性能,最终获得制备叠层太阳能电池的最佳方案。结果沉积Sn S薄膜的溅射功率、沉积时间、工作气压为28W,40 min,2.5 Pa和36 W,25 min,2.3 Pa时,获得的两种Sn S薄膜均在(111)晶面具有良好的择优取向,晶粒较大,表面致密光滑,禁带宽度分别为1.48,1.83 e V。沉积Zn O薄膜的溅射功率、溅射时间、工作气压为100 W,10 min,2.5 Pa时,Zn O薄膜的结晶性能更优,透过率更大,适合作为太阳能电池的n层。以宽禁带Sn S(1.83 e V)为外p型吸收层,窄禁带宽度Sn S(1.48 e V)为内p型吸收层制备的FTO/n-Zn O/p-Sn S(1.83 e V)/n-Zn O/p-Sn S(1.48 e V)/Al叠层太阳能电池,其光电转化效率为0.108%,短路电流为0.90 m A,开路电压为0.40 V。结论制得的叠层太阳能电池性能较传统单层太阳能电池更优。     

Oriented growth of ZnO nanostructures on different substrates via a hydrothermal method

Well-oriented ZnO nanorod arrays are successfully fabricated on different substrates. They are formed on different substrates at low temperature via a hydrothermal method, without adding any catalysts or templates. This approach is convenient and inexpensive. The morphologies of ZnO crystals could be controlled and transformed to other morphologies successfully by using different substrates. The effects of the substrates on the ZnO nanorod arrays have been systematically studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The characterizations of XRD and scanning electron microscopy (SEM) reveal that these products are pure single-crystal and the structure is uniform. The photoluminescence property has been detected by photoluminescence (PL) spectrum and Raman spectrum. Photoluminescence measurements show that each spectrum consists of the ultraviolet (UV) band and a relative broad visible light emission peak. But substrates play roles in the intensity of ultraviolet and visible light emission peak. The green emission in Raman measurement may be related to the surface states.     

Field emission enhancement of ZnO nanorod arrays with hafnium nitride coating

Vertically well-aligned single crystal ZnO nanorod arrays were synthesized and enhanced field electron emission was achieved with hafnium nitride (HfN_x) coating under proper sputtering condition. HfN_x films with various composition have been coated on ZnO nanorod arrays using a reactive direct current (DC) magnetron sputtering system. Morphology and crystal configuration of the ZnO nanorod arrays were investigated by scanning electron microscopy and X-ray diffraction. The field emission properties of the coated and uncoated ZnO nanorod arrays were characterized. The as-grown ZnO nanorod arrays showed a turn-on electric field of 6.60 V μm^− 1 at a current density of 10 μA cm^− 2 and an emission current density of 1 mA cm^− 2 under the field of 9.32 V μm^− 1. While the turn-on electric field of the coated ZnO nanorod arrays sharply decreased to 2.42 V μm^− 1, an emission current density of 1 mA cm^− 2 under the field of only 4.30 V μm^− 1 can be obtained. A method to accurately measure the work function of the coated films was demonstrated.