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In this paper, we describe curved hole drilling via the reflection of a laser beam off the sidewall of the drilled hole. A slightly offset laser beam forms a tilted surface at the bottom of the hole, controlling the angle of curvature. An ultraviolet laser beam operating at a wavelength of 266 nm was used. To visualize the hole formation process, borosilicate glass was used as the laser workpiece. This method was able to drill a curved hole with an average angle of ∼3° with curvature beginning at a depth of 400–600 μm. A curved hole with a diameter of <50 μm was achieved. A branched hole was also demonstrated by using the reflection of the tilted sidewall. The curved hole formation process was recorded with a high speed camera. Once the ablated sidewall reached a certain depth, drilling ceased as the laser energy fell below the ablation threshold. Ultimately, judicious selection of an appropriate laser fluence and sidewall angle allow the formation of curved holes. 相似文献
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为了实现高速度切割碳化硅(SiC)晶圆,采用自行研制的高能量皮秒脉冲光纤激光器进行了隐形切割实验。依据切片的截面形貌、表面热损伤区和边缘直线度,分析了皮秒激光器的切割结果,并探究了单脉冲能量和扫描速度对切片质量的影响。结果表明,当使用中心波长为1 030 nm、重复频率为100 kHz、单脉冲能量为20μJ、脉冲宽度约为100 ps的皮秒脉冲隐形切割360μm厚度的SiC晶圆时,切片的质量能够满足实际应用要求,且激光的扫描速度可达400 mm/s,相应的切割速度为44.44 mm/s,高于其他相关报道。 相似文献
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基于激光切片原理的分析,给出了厚硅片的高速激光切片方法,采用平凸腔补偿工作物质的热透镜效应,利用Nd∶YAG棒本身的自孔径选模作用,获得了光束质量因子M2等于4.19的50 W 1.064 μm激光输出。选取合适的扩束倍数、重复频率和出气孔直径,当切割0.75 mm厚的硅片时,切片速度达400 mm/min;当切割两层叠放的0.75 mm厚的硅片时,切片速度达到100 mm/min。切片的切口光滑,切缝较窄,重复精度高,切片质量好,达到用传统方法难以达到的切片效果。 相似文献
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钻(扩)孔时,孔的尺寸精度主要取决于钻头直径和装夹精度,而孔的位置精度主要靠钻模来保证。图1如图1所示,在钻模上钻孔O1和O2时,孔边距的误差计算公式通常为ΔKB=δL1j+e12+x22+e22+(2x3)2孔O1与O2的孔间距误差计算公式为ΔKx=δL2j2+e12+x22+e22+(2x3)2+e32+x52+e42+(2x6)2孔与工件底面垂直度误差计算公式(以孔O1为例)为ΔKc1=x1BH各式中δL1j———钻模板左底孔中心线与左侧定位面距离的尺寸公差 e1,e2,e3,e4———… 相似文献
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对外排屑深孔钻削DF系统的原理及装置进行了研究,对外排屑深孔钻削DF系统的参数选择及使用时注意事项进行系统地阐述。并设计制造出外排屑深孔钻削DF装置。经实验研究证明可有效的解决枪钻钻削过程中排屑等问题。 相似文献
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分析孔加工中常用的麻花钻、扩孔钻、深孔单刃钻等振动切削的断屑机理,得出各种钻头振动切削的最佳条件,包括振动发生器的最小振幅、振动频率和工件转速断屑的最佳比值及各种情况的断屑层图。 相似文献
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利用复合磨粒抛光液的硅片化学机械抛光 总被引:1,自引:0,他引:1
为了提高硅片的抛光速率,利用复合磨粒抛光液对硅片进行化学机械抛光.分析了SiO2磨粒与聚苯乙烯粒子在溶液中的ζ电位及粒子间的相互作用机制,观察到SiO2磨粒吸附在聚苯乙烯及某种氨基树脂粒子表面的现象.通过向单一磨粒抛光液中加入聚合物粒子的方法获得了复合磨粒抛光液.对硅片传统化学机械抛光与利用复合磨粒抛光液的化学机械抛光进行了抛光性能研究,提出了利用复合磨粒抛光液的化学机械抛光技术的材料去除机理,并分析了抛光工艺参数对抛光速率的影响.实验结果显示,利用单一SiO2磨料抛光液对硅片进行抛光的抛光速率为180 nm/min;利用SiO2磨料与聚苯乙烯粒子或某氨基树脂粒子形成的复合磨粒抛光液对硅片进行抛光的抛光速率分别为273 nm/min和324 nm/min.结果表明,利用复合磨粒抛光液对硅片进行抛光提高了抛光速率,并可获得Ra为0.2 nm的光滑表面. 相似文献
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Several studies have focused on the electrical connections between the front and rear surfaces of stacked substrates in order to improve device performance. The fabrication and mounting process of the substrates involves three steps: (1) through-hole drilling, (2) formation of a conductive path inside the hole, and (3) physical bonding and electrical wiring connection of the substrates. In this paper, we demonstrate a technique for performing the process above simultaneously by laser percussion drilling. A borosilicate glass sample was used as the substrate, while copper was used as the wiring material. The substrate was drilled to a diameter of ~30 μm by laser radiation, while the copper was evaporated and deposited in a ~12-μm-thick layer on the inner surface of a glass-copper hole. Hence, a conductive path was formed inside the glass hole, facilitating bonding and conduction between the glass substrate and the copper sheet. The conductivity and bonding strength per 100 points between the glass surface and the copper sheet were ~5 Ω and ~1 N respectively. Furthermore, gaps were observed between the glass substrate and the copper sheet by energy dispersive X-ray analysis using a scanning electron microscope. However, the glass substrate and the copper sheet were bonded by the formation of a redeposited layer on the inner surface of the hole and in the gap between the glass and copper surfaces. 相似文献
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S. C. Tseng R. S. Chen C. C. Lio 《The International Journal of Advanced Manufacturing Technology》2006,31(1-2):1-9
The wafer level chip scale assembly (WLCSP) has increasingly become popular due to its compact, wafer scale assembly. In a WLCSP assembly, the under bump metallurgy (UBM) connecting the solder joints and the chip is crucial for the assembly reliability. This study focuses on a WLCSP with 96.5Sn3.5Ag/95.5Sn3.8Ag0.7Cu solder joints and Ti/Cu/Ni UBM on a 2–layer microvia build-up electric board. Furthermore, the Garofalo-Arrhenius creep model in finite element analysis ANSYS 6.0 is used for simulations on the WLCSP assembly under thermal cycling to investigate the deformations of the assembly with different thickness of nickel layer, the maximum equivalent strain and maximum equivalent stress of microvias/joints. Finally, the Coffin-Manson equation is applied to predict the fatigue lives of four combinations of solder joints with different eutectic alloy and thickness of nickel layer. 相似文献
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板上芯片集成封装的发光二极管结构设计 总被引:3,自引:1,他引:2
根据板上芯片(COB)集成封装的结构特点,同时考虑反光杯结构和荧光粉涂敷方式,分析了影响COB封装的发光二极管(LED)发光性能的主要因素.针对反光杯结构的关键要素:反光杯形状、反光杯深度、反光杯角度,优化设计了LED光学结构.通过改变TracePro软件中反光杯的相关参数,模拟了不同LED的光强分布及发光效率,探讨了提高COB封装的白光LED发光效能的途径.最后,在4 mA和12 mA电流下进行了传统荧光粉涂敷方式及荧光粉远离芯片涂敷方式的对照实验.仿真及实验结果表明:采用圆锥形反光杯,反光杯深度在一定范围内略大,且反光杯角度设为30°时,LED发光性能较为优异.与传统封装方法相比,采用荧光粉远离芯片的封装方法可使发光效率提高5%左右.得到的结果对LED封装制造过程有指导意义. 相似文献
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通过对轴承钻油孔夹具结构的改进,使钻油孔夹具内径与外径定位兼备,扩大使用范围,降低制造成本。经生产验证,经济、实用、便于管理。 相似文献
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In the double-sided polishing process of silicon wafers, there is a strong demand to reduce amount of edge roll-off (ERO) while improving global flatness of a wafer. In the present study, we clarified the negative effects of uneven wear of the polishing pads on the global flatness of a wafer can be suppressed when the deformation of the polishing pads is large. As for the ERO, we found small deformation of the polishing pad near the top surface was effective in reducing the amount of ERO. In addition, we revealed small distance from the surface of the polishing pad at the area under the wafer to that at the area around the wafer was also effective in reducing the amount of ERO. On the basis of the findings, we developed a three-layered polishing pad which was expected to reduce the amount of ERO while achieving the good global flatness. 相似文献
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Cheol Kim Won-Ho Yang Sung Pil Heo 《Journal of Mechanical Science and Technology》2001,15(12):1647-1654
The hole drilling method is widely used in measuring residual stress in surfaces. In this method, the inclination of holes is one of the sources of error. This paper presents a finite element analysis of the influence of inclined holes on the uniaxial residual stress field. The error in stress has been found to increase proportionally to the correct inclined angle of the hole. The correction equations by which one may easily obtain the residual stress, taking account of the inclined angle and direction, have been derived. The error of stress due to the inclined hole has been reduced to around 1% using the correction equations. 相似文献
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The thrust measured during a drilling test is related to the hardness of the material being tested. When the test is performed on a superficially heat-treated specimen, the results do not correspond exactly to the hardness profile obtained by the standard Vickers micro hardness technique.Because of the extreme hardness of the surface tested and the small diameter required to minimise material damage, a drill is more suitable than a milling cutter. The thrust measured during testing thus integrates heterogeneous resistance along the cutting edge of the drill. Consequently, correspondence between the hardness profile and the measured signal is shown to be non-linear. By discretising the thickness drilled, we have developed an algorithm which yields the hardness of each elemental thickness. Results for carbo-nitriding steel are very close to those obtained by the Vickers technique and the accuracy is also very similar for both methods. 相似文献