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1.
激光二极管抽运的高光束质量的Yb 总被引:2,自引:0,他引:2
演示了激光二极管(LD)端面抽运Yb∶YAG薄片固体激光器,抽运源是美国相干公司(COHERENT)光纤耦合输出半导体激光器,光纤输出芯径为800 μm,在940 nm处最大输出功率为13.56 W,由于光纤输出芯径较大,不利于抽运光和振荡光的模式匹配,为了得到较小的抽运光斑,采用了焦距比为30∶12的耦合透镜组压缩入射到晶体端面的抽运光光腰半径,晶体为原子掺杂浓度8 at.-%,几何尺寸为φ7 mm×1.6 mm国产Yb∶YAG晶体,整个实验装置采用温差电致冷(TEC)和循环水冷却方式,实验中得到了3.06 W的连续激光输出,激光器的斜率效率为33.1%,测得M2因子在x和y方向分别为1.54和1.73,具有良好的光束质量。 相似文献
2.
激光二极管抽运的高光束质量的Yb:YAG薄片激光器 总被引:3,自引:4,他引:3
演示了激光二极管(LD)端面抽运Yb:YAG薄片固体激光器,抽运源是美国相干公司(COHERENT)光纤耦合输出半导体激光器,光纤输出芯径为800μm,在940 nm处最大输出功率为13.56W,由于光纤输出芯径较大,不利于抽运光和振荡光的模式匹配,为了得到较小的抽运光斑,采用了焦距比为30:12的耦合透镜组压缩入射到晶体端面的抽运光光腰半径,晶体为原子掺杂浓度8 at.-%,几何尺寸为φ7mm×1.6 mm国产Yb:YAG晶体,整个实验装置采用温差电致冷(TEC)和循环水冷却方式,实验中得到了3.06 W的连续激光输出,激光器的斜率效率为33.1%,测得M2因子在x和y方向分别为1.54和1.73,具有良好的光束质量. 相似文献
3.
演示了激光二极管(LD)端面抽运Yb∶YAG薄片固体激光器,抽运源是美国相干公司(COHERENT)光纤耦合输出半导体激光器,光纤输出芯径为800μm,在940nm处最大输出功率为1356W,由于光纤输出芯径较大,不利于抽运光和振荡光的模式匹配,为了得到较小的抽运光斑,采用了焦距比为30∶12的耦合透镜组压缩入射到晶体端面的抽运光光腰半径,晶体为原子掺杂浓度8at.%,几何尺寸为7mm×16mm国产Yb∶YAG晶体,整个实验装置采用温差电致冷(TEC)和循环水冷却方式,实验中得到了306W的连续激光输出,激光器的斜率效率为331%,测得M2因子在x和y方向分别为154和173,具有良好的光束质量。 相似文献
4.
利用GaAs晶体作为可饱和吸收体, 实现了掺镱光子晶体光纤激光器的被动调Q输出。实验用掺杂光子晶体光纤的芯径为21 μm, 数值孔径为0.04, 在实现了大模场面积的同时, 保证了激光器的单模运转, 从而得到高光束质量的激光输出。实验使用高功率半导体激光器作为抽运源, 采用自行研制的耦合系统将抽运光耦合进入光子晶体光纤的包层中。在激光器平均输出功率为5.8 W时, 实验得到的最短输出激光脉冲为80 ns, 重复频率为6.7 kHz。 相似文献
5.
双端包层抽运光纤激光器实现137 W激光输出 总被引:5,自引:0,他引:5
采用包层抽运技术的双包层光纤激光器能够在内包层中注入高的抽运光功率 ,从而获得高功率的激光输出。光纤激光器具有接近量子极限的光 光转换效率 ;其面积 体积比很大 ,纤芯内高功率激光产生的热量很容易通过光纤表面散出 ,即使在高功率情况下也无需对光纤和谐振腔进行强制冷却 ;纤芯的波导限制使在高功率激光输出下也能够保证高的光束质量。这些独特特点使得高功率双包层光纤激光器成为极具前景的激光器件 ,在高精度激光加工、激光医学、空间技术等领域中逐渐成为主导力量。本课题组运用高功率LD抽运模块 ,采用端面包层抽运掺Yb3+ 双… 相似文献
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LBO倍频1.8 W连续671 nm红光激光器 总被引:6,自引:3,他引:6
Nd:YVO4晶体中掺杂的Nd^3 除了1.064μm的受激辐射跃迁外,还可产生1.342μm波段的弱辐射,经腔内倍频,最终可输出671nm的红色激光。报道了一种光纤耦合半导体激光二极管(LD)阵列端面抽运Nd:YVO4晶体,腔内采用Ⅰ类临界相位匹配LBO(LiB3O5)晶体倍频,实现波长为671nm的全固态红光激光器瓦级输出的理论分析和实验结果。采用短三镜折叠腔结构,通过对激光晶体热透镜焦距的估算,用计算机优化设计选取了合适的谐振腔参数,在芯径为400μm的光纤耦合808nm半导体激光二极管阵列抽运下,当注入功率为8W时,获得了波长为671nm的红光基模稳定输出.最高输出功率达1.8W,光-光转换效率达22.5%。 相似文献
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研究了阶跃折射率分布的百微米芯径双包层光纤激光器的输出特性及其模式控制技术.理论上对光纤缠绕法模式控制技术应用于百微米芯径光纤激光器的可行性进行了分析.实验中,采用腔内小孔法对百微米芯径光纤激光器的输出激光模式进行控制,研究了不同孔径对输出激光光束质量的影响.在腔内不加小孔时输出激光x,y方向的光束质量因子M2分别为4.67和4.60,在腔内加入直径为2 mm的/JqL后,x,y方向的光束质量因子M2分别为1.96和2.01,腔内小孔对输出激光的光束质量有明显的改善. 相似文献
10.
掺Yb双包层光纤激光器获得50W激光输出 总被引:2,自引:0,他引:2
双包层光纤激光器同常规激光系统相比 ,其在散热、光束质量、效率、体积等方面具有显著优势 ,是高功率激光器向小型化、全固化和集成化发展的一个重要方向 ,采用掺Yb的双包层光纤实现高功率 1μm左右的单模激光输出是目前人们研究的重点。最近 ,我们采用准直输出的大功率半导体激光器为抽运源 ,通过特殊设计的抽运耦合系统来抽运D形内包层的双包层光纤 ,获得了 5 0 3W的激光功率输出。所用抽运源为准直输出的大功率LD模块 ,其输出约为 72mm× 2 4mm的长方形准直光束 ,中心波长约在 975nm。双包层光纤为D形内包层 (35 0 /4 0 0 μm )的掺… 相似文献
11.
Michael Reilly 《半导体技术》2004,29(12)
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system. 相似文献
12.
Thomas M.Trexler 《半导体技术》2004,29(5)
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test. 相似文献
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The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation. 相似文献
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The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high. 相似文献
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Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible. 相似文献
16.
GU Min-fen LIANG Zhong-cheng WANG Ren-zhou DONG Xiang-mei ZHANG Pei-ming CHEN Jia-bi 《光电子快报》2008,4(2):150-152
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor. 相似文献
17.
Qi-jiang Ran Pei-de Han Yu-jun Quan Li-peng Gao Fan-ping Zeng Chun-hua Zhao 《光电子快报》2008,4(4):239-242
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's. 相似文献
18.
The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well. 相似文献
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Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems. 相似文献
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An insert layer structure organic electroluminescent device(OLED) based on a new luminescent material (Zn(salen)) is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn(salen)/Liq/LiF/A1/CuPc/NPD/Zn(salen)/Liq/LiF/A1. Effective insert electrode layers comprising LiF(1nm)/Al(5 nm) are used as a single semitransparent mirror, and bilayer cathode LiF(1 nm)/A1(100 nm) is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect. 相似文献