频谱分割ASE注入波长锁定FP-LD的研究

文章分析了频谱分割放大自发辐射(ASE)注入波长锁定法布里-珀罗激光器(FP-LD)光谱随注入种子光光功率的变化情况.实验研究了ASE频谱分割光源注入波长锁定FP-LD的增益和边模抑制比(SMSR)随注入ASE光功率以及FP-LD注入电流的变化关系.最后比较了经过不同频谱分割方法的注入波长锁定光信号在波分复用-无源光网...     

全光加密A逻辑门的实验研究

针对光传输系统单波长信号全光加密的应用需求,基于流密码体制开展了光传输系统物理层全光加密技术的理论分析,设计了基于SOA-XGM(半导体光放大器-交叉增益调制)的全光A逻辑门的实验方案,并在实验室搭建了实验系统。实现了速率为10Gbit/s的A逻辑处理,分析了探测光信号功率、泵浦光信号功率和SOA注入电流等主要参数对逻辑门输出信号质量的影响,实现了明文光信号的全光加密。     

全光加密 A?B 逻辑门的实验研究

针对光传输系统单波长信号全光加密的应用需求,基于流密码体制开展了光传输系统物理层全光加密技术的理论分析,设计了基于 SOA-XGM(半导体光放大器-交叉增益调制)的全光 A?B 逻辑门的实验方案,并在实验室搭建了实验系统。实现了速率为10 Gbit/s 的 A?B 逻辑处理,分析了探测光信号功率、泵浦光信号功率和 SOA 注入电流等主要参数对逻辑门输出信号质量的影响,实现了明文光信号的全光加密。     

基于交叉增益调制的全光波长转换实验研究

分析了半导体光放大器交叉增益调制的基本原理,并利用该机制进行了2．5Gbit/s的非归零码光脉冲的波长转换。向上波长转换间隔大于14nm。最后,对转换信号测量了接收机入纤功率和误码率的关系曲线、光眼图、消光比和光信噪比等参数,结果发现转换信号眼图清晰,张开度大,消光比大于10dB,光信噪比大于30dB。实验表明采用半导体光放大器的交叉增益调制可以较理想地实现2．5Gbit/s的非归零码的全光波长转换。     

基于SOA交叉增益调制的2.5Gbit/s NRZ码 全光波长转换实验研究

基于SOA交叉增益调制效应(XGM)进行了2.5Gbit/s 31位非归零(NRZ)伪随机码的全光波长转换实验,分析了该方案下转换信号的消光比、信噪比、平均功率与输入连续光、信号光功率、波长的关系.实验中转换信号的光信噪比可达40dB以上,消光比和信噪比均大于10dB,符合ITU-T G.691标准.信号波长向下转换间距可达60nm,是目前基于SOA中的XGM效应进行波长转换获得的最大的波长间距.     

基于周期极化反转铌酸锂光波导的全光信号处理

利用周期极化反转铌酸锂(PPLN)光波导中和频(SFG)、级联倍频(SHG)和差频(DFG)、级联和频与差频等二阶和级联二阶非线性效应,提出并理论研究了基于单个PPLN光波导实现40 Gbit/s全光半加器、半减器、与门、或门、异或门等多种逻辑功能.提出并理论研究了基于PPLN光波导环形镜结构实现非归零码(NRZ)到归零码(RZ)的全光码型转换.实验验证了10 Gbit/s和20 Gbit/s基于PPLN光波导NRZ到RZ的全光码型转换.     

改进型双二进制归零码信号在标记交换系统中的新应用

提出以改进型双二进制归零码(MD-RZ)信号作为标记,分别采用差分相移键控非归零码(NRZ-DPSK)信号和差分正交相移键控非归零码(NRZ-DQPSK)信号作为载荷进行正交调制的新方案.然后提出了一种从标记信号中提取和恢复时钟的简单方案.比较了背对背系统中2.5 Gbit/s的MD-RZ标记叠加到10 Gbit/s的NRZ-DPSK载荷和20 Gbit/s的NRZ-DQPSK载荷上的频谱特性,证明了MD-RZ标记占空比越大,光分组信号的频带利用率越高.采用传统的二进制强度调制-直接检测(IM-DD)系统的接收机检测得到了背对背系统中不同占空比的2.5 Gbit/s MD-RZ标记的眼图.结果表明,若采用色散补偿技术,两种光分组信号中的MD-RZ标记能够在长距离传输时克服接收端眼图的失真;当入纤功率值高于18 dBm时,占空比取值越大,MD-RZ标记的眼开度代价具有越高的传输鲁棒性.     

低功率抽运光纤参量振荡器的时钟提取抖动性能

采用两次光调制技术将非归零(NRZ)码数据转换成归零(RZ)码光信号后,利用光纤参量振荡器(FOPO)结构实现了较低光功率抽运下的参量波长转换和时钟提取功能。实验表明,对于波长转换间隔为1.6nm的10Gbit/s时钟提取,优化的输入抽运光功率范围是8～14dBm;当输入信号的幅度抖动和相位抖动分别大于2.28mV和3.5ps时,该时钟提取系统可实现抖动抑制功能,其输入/输出抖动转移曲线斜率约为0.29和0.16。     

基于级联半导体光放大器实现全光逻辑与门的改进方案

基于级联半导体光放大器(SOA)实现全光逻辑与门的方案中,第一级输出信号质量直接影响逻辑与运算结果.采用载流子恢复较慢的体材料半导体光放大器用于第一级转换,在10 Gbit/s以上得不到理想的转换结果,限制了该方案实现逻辑与门的速率.利用光纤延时干涉仪(DI)和第一级半导体光放大器级联可以改善第一级输出信号质量,从而有效提高第二级全光逻辑与门的实现速率.阐述了改进方案中延时干涉仪的作用,并进行了数值模拟.根据实验结果,采用载流子恢复较慢的半导体光放大器级联延时干涉仪能够实现高速归零(RZ)信号和非归零(NRZ)信号的反码,从而得到较高速率的全光逻辑与门.实验实现了20 Gbit/s的伪随机归零和非归零信号的全光逻辑与门,对40 Gbit/s的结果进行了分析和讨论.     

光正交频分复用信号垂直泵浦全光波长变换研究

理论分析了一种基于垂直泵浦结构光半导体放大器(SOA)的偏振无关光正交频分复用(OOFDM)信号波长变换模型,实验证明了基于SOA-四波混频(FWM)的OOFDM信号波长变换的可行性,观测到OOFDM在SOA引入噪声而带来的信号劣化。实验成功实现了2.5Gbit/s光OFDM信号的波长变换,其误码率为1×10-3的接收机功率代价可以忽略,其极化敏感度小于3dB。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.