Farbication of Optically Transparent Lead Magnesium Niobate Polycrystalline Ceramics Using Hot Isostatic Pressing

The physical, dielectric, and optical properties of hot isostatically pressed lead magnesium niobate polycrystalline ceramics modified with 1/2 mol% La₂O₃, Pb_{1–3/2 x} La _x □ _{x /2}-(Mg_1/3Nb_2/3)O₃, have been investigated. Methods used to characterize the ceramics included determination of the dielectric permittivity, optical transmittance, and refractive index dispersion. The materials exhibited relaxor ferroelectric type behavior with a peak dielectric constant K > 14000 and average T _c ∼−35°C. Various sintering, hot isostatic pressing, and annealing conditions were examined to produce highly dense and optically transparent materials. Through the use of hot isostatic pressing, densities more than 99.5% theoretical and transmittance greater than 50% at 633-nm wavelength were obtained. Hot isostatic pressing technique appears to be a good alternative to hot uniaxial pressing without the associated problem of PbO volatility, reactivity with the pressure vessel, and geometrical constraints.     

Melt Processing of YBa2Cu3O7-x

Sintering YBa₂Cu₃O_{7- x} bulk forms at 1050°C followed by annealing at 980°C causes the development of a thick oriented surface layer (Lotgering factor = 0.7). The thickness of the layer depends on the thermal treatment, which is a two-step sintering process. Firing at 1050°C for 2.5 h followed by 30 h at 980°C leads to the development of a 0.1-mm-thick surface layer, with clear indication that longer annealing would result in a thicker film. Some orientation develops during un-axial compaction of the powders. Lotgering orientation factor calculation from X-ray diffraction analysis. SEM, and TEM were used to characterize the microstructure of these samples. T _c was similar to that of conventionally processed high-density samples, between 83 and 87 K. Some thermal treatments resulted in samples that displayed high resistivity above T _c , possibly caused by segregation of Cu to the grain boundaries.     

Properties of Modified Lead Zirconate Titanate Ceramics Prepared at Low Temperature (800°C) by Hot Isostatic Pressing

High-density lead zirconate titanate (PZT) ceramics were fabricated for the first time at a temperature as low as 800°C via the hot isostatic pressing (HIP) of a PZT powder with a modified composition of 0.92Pb(Zr_0.53Ti_0.47)O₃—0.05BiFeO₃—0.03Ba(Cu_0.5W_0.5)O₃ that contained 0.5 mass% MnO₂. The resultant PZT ceramics exhibited a microstructure that was denser and finer than that of PZT sintered at 935°C, which is the lowest temperature for the densification of the same composition via normal sintering. The relevant dielectric and piezoelectric properties of the HIPed PZT ceramics were as follows: coefficient of electromechanical coupling ( K ₃₁), 31.8%; mechanical quality factor ( Q _m), 1364; piezoelectric constant ( d ₃₁), −73.7 × 10⁻¹² C/N; relative dielectric constant (ɛ₃₃^T/ɛ₀), 633; dielectric loss factor (tan δ), 0.5%; Curie temperature ( T _c), 285°C; and density (ρ), 8.06 g/cm³. In addition to these reasonably good piezoelectric properties, the HIPed PZT exhibited better mechanical properties—particularly, higher fracture strength—than the normally sintered PZT.     

Sintering and Electrical Properties of Lead-Free Na0.5K0.5NbO3 Piezoelectric Ceramics

Lead-free Na_0.5K_0.5NbO₃ (NKN) piezoelectric ceramics were fairly well densified at a relatively low temperature under atmospheric conditions. A relative density of 96%–99% can be achieved by either using high-energy attrition milling or adding 1 mol% oxide additives. It is suggested that ultra-fine starting powders by active milling or oxygen vacancies and even liquid phases from B-site oxide additives mainly lead to improved sintering. Not only were dielectric properties influenced by oxide additives, such as the Curie temperature ( T _c) and dielectric loss ( D ), but also the ferroelectricity was modified. A relatively large remanent polarization was produced, ranging from 16 μC/cm² for pure NKN to 23 μC/cm² for ZnO-added NKN samples. The following dielectric and piezoelectric properties were obtained: relative permittivity ɛ ^T ₃₃/ɛ ₀ =570–650, planar mode electromechanical coupling factor, k _p=32%–44%, and piezoelectric strain constant, d ₃₃=92–117 pC/N.     

Water-Based Gelcasting of Surface-Coated Silicon Nitride Powder

A layer of Y₂O₃–Al₂O₃, used as a sintering aid, was coated onto the surface of Si₃N₄ particles by the precipitation of inorganic salts from a water-based solution containing Al(NO₃)₃, Y(NO₃)₃, and urea. The electrokinetic and colloidal characteristics of the Si₃N₄ powder were changed significantly by the coating layer. As a result, dispersion of the Y₂O₃–Al₂O₃-coated Si₃N₄ powder was significantly greater than that of the original powder. Furthermore, the Y₂O₃–Al₂O₃ coating layer prevented the hydrogen-gas-discharging problem that occurred during gelcasting of the original Si₃N₄ powder because of reaction between the uncoated powder and the basic aqueous solution in suspension. Surface coating, as well as the gelcasting process, significantly improved the microstructure, room-temperature bending strength, and Weibull modulus of the resulting ceramic bodies.     

Synthesis of Pyrochlore-Free 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 Ceramics via a Soft Mechanochemical Route

Single-phase perovskite 0.9Pb(Mg_1/3Nb_2/3)O₃-0.1PbTiO₃ (0.9PMN–0.1 PT) from a stoichiometric mixture of starting materials was synthesized by applying a mechanochemical technique to the stage of a precursor. A stoichiometric mixture of PbO, TiO₂, Mg(OH)₂, and Nb₂O₅ was milled for 60 min and heated at temperatures as low as 850°C for 4 h to obtain a single phase. The maximum dielectric constant of the samples from the milled mixture increased as the sintering temperature increased, with the remarkable grain growth, and attained 24600 at 1200°C. In contrast, poor densification and coexistence of the pyrochlore phase were observed on the samples from the nonmilled mixture. Further observation suggested that the pyrochlore phase concentrated near the surface during sintering and then migrated into the PbZrO₃ packing powder, leading to a pyrochlore–free phase at 1250°C. The dielectric constant of the latter ceramics was explained by the series mixing rule for the dielectric constant of a diphasic solid.     

Effect of ZnO and CuO on the Sintering Temperature and Piezoelectric Properties of a Hard Piezoelectric Ceramic

Hard piezoelectrics with high dielectric and piezoelectric constants are used for high-power applications. However, the sintering temperature of these ceramics is high, around 1200°C, restricting the usage of cheap base metal electrodes in fabrication of multi-layer components. This study investigates the effect of CuO and ZnO on the sintering temperature of a hard piezoelectric, APC 841, which is a MnO₂- and Nb₂O₅-modified PZT. The addition of CuO decreased the sintering temperature through the formation of a liquid phase. However, the piezoelectric properties of the CuO-added ceramics sintered at ≤950°C were lower than the desired values. The addition of ZnO resulted in a significant improvement in the piezoelectric properties. This enhancement was attributed to the formation of a homogeneous microstructure with large grains. The APC 841+0.2 wt% CuO+1.1 wt% ZnO ceramics sintered at 950°C showed excellent piezoelectric and dielectric properties with values of k _p=0.532, Q _m=750, d ₃₃=351 pC/N, ɛ₃₃/ɛ_o=1337, and T _c=280°C.     

Synthesis of High Density and Transparent Forsterite Ceramics Using Nano-Sized Precursors and Their Dielectric Properties

Forsterite (Mg₂SiO₄) ceramics were prepared using Mg(OH)₂ and SiO₂ as precursors, and the effect of powder characteristics of Mg(OH)₂ on calcination and sintering was investigated. The use of highly dispersed Mg(OH)₂ powder (HD powder) resulted in a lower calcination temperature. Forsterite powder of high homogeneity and small particle size prepared from the HD powder enabled synthesis of high-density forsterite ceramics by ordinary sintering without applying external pressure. Moreover, transparent forsterite ceramics were successfully synthesized through addition of excess Mg to the precursors to compensate for Mg evaporated during the sintering process. Subsequent dielectric measurements revealed that the transparent forsterite ceramics had a very low dielectric loss (tan δ<10⁻⁴).     

Effect of Excess PbO on the Sintering Characteristics and Dielectric Properties of Pb(Mg1/3Nb2/3)O3–PbTiO3-Based Ceramics

Additions of excess PbO to the perovskite Pb[(Mg_1/3Nb_2/3)_0.92Ti_0.08]O₃ solid solution enhanced the formation of a liquid phase at 840°C, which served as a densification aid for the ceramics. The liquid phase allowed elimination of pores and promoted grain growth during sintering. With additions of 1 to 2 wt% excess PbO, densities in excess of 97% of theoretical were obtained at a sintering temperature of 950°C. The peak dielectric constants of the resulting ceramics were over 18 000 at 30°C and dissipation factors less than 1%. Additions of PbO in excess of 2 wt% resulted in inferior dielectric properties due mainly to the dilution of the ferroelectric phase.     

Elastic, Piezoelectric, and Dielectric Properties of 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 Crystals Obtained by Solid-State Crystal Growth

Single crystals with the composition of 0.71Pb(Mg_1/3Nb_2/3)O₃–0.29PbTiO₃ (PMNT29) were grown using the solid-state crystal growth (SSCG) method. Compared with the conventional Bridgman grown crystals, the SSCG PMNT29 crystals were found to possess comparable piezoelectric, dielectric, and electromechanical properties ( d ₃₃∼1500 pC/N, ɛ^T ₃₃/ ɛ ₀∼5400 and k ₃₃∼90%), with the same Curie temperature ( T _C) and ferroelectric phase transformation temperature ( T _{R – T} ). The full set of elastic, piezoelectric, and dielectric material constants were determined by the resonance method for the SSCG grown PMNT29 crystals according to IEEE standards and compared with Bridgman grown crystals. The dielectric temperature behavior and the strain field characteristics were investigated, demonstrating excellent performance over the temperature range from room temperature to 95°C. Strain behavior at high electric fields was found to be different from Bridgman growth crystals and believed to be attributed to different domain structures.     

Dielectric and Magnetic Properties of Low-Temperature-Fired Ferrite–Dielectric Composites

The composition effects on the sintering behavior, microstructure evolution, dielectric, and magnetic properties of BaO·(Nd_0.8Bi_0.2)₂O₃·4TiO₂ (BNBT)+Bi₂O₃–B₂O₃–SiO₂–ZnO (BBSZ) glass–(Ni_0.28Cu_0.12Zn_0.6O)–(Fe₂O₃)_0.99 (NiCuZn ferrite) composites were investigated in developing low-temperature-fired composites for high-frequency electromagnetic interference devices. An X-ray diffractometer, a scanning electron microscope, and a dilatometer were used to examine the BNBT+BBSZ glass powder to NiCuZn ferrite ratio effect on the composites densification and chemical reaction between BNBT and NiCuZn ferrite. The results indicate that these composites can be densified at 950°C with no significant chemical reactions occurring between BNBT and NiCuZn ferrites during sintering. The BNBT+BBSZ glass–NiCuZn ferrite composites sintered at 950°C exhibit excellent dielectric and magnetic properties over a wide frequency range.     

Microwave Characteristics of (Pb,Ca)(Fe,Nb,Sn)O3 Dielectric Materials

The dielectric properties of (Pb_{1− x} Ca _x ){(Fe_1/2Nb_1/2)_{1– y} Sn _y }O₃ solid solutions, where 0.4 lessthan equal tox ≤ 0.6, y = 0.05, 0.1, have been investigated at microwave frequencies. The replacement of Fe³⁺/Nb⁵⁺ by Sn⁴⁺ at the B–site of the perov-skite structure considerably improves the loss quality factor Q and does not remarkably affect the dielectric constant epsilon_r and the temperature coefficient of resonant frequency tau_f. The tau_f value of nearly 0 ppm/°C can be realized for x= 0.55. New high-quality dielectric ceramics having epsilon_r of 85.3-89.9,Qf values of 7510-8600 GHz, and τ_f of 0-9 ppm/°C were obtained at 1150°C for 3 h sintering in air. The influence of the sintering atmosphere on dielectric properties was also investigated.     

Strengthening of Oxide Ceramics by Transformation-Induced Stress

Alumina-zirconia composites were fabricated by isostatic pressing and sintering of powder mixtures in such a way that bar-shaped specimens consisted of three layers. The outer layers contained A1₂O₃ and unstabilized ZrO₂ while the central layer contained A1₂O₃ and partially stabilized ZrO₂ (with 2 mol% Y₂O₃). When cooled from the sintering temperature, some of the zirconia in the outer layers transformed to the monoclinic form while zirconia in the central layer was retained in the tetragonal form. The transformation of zirconia in the outer layers led to the establishment of surface compressive stresses and balancing tensile stresses in the bulk. The existence of surface compressive stresses was verified by a strain gauge technique and bending strength measurements on samples with varying thickness of the outer layers. The layered composites exhibited greater strength in comparison with monolithic Al₂O₃-ZrO₂ specimens. Further, variation of strength in bending with outer layer thickness (for a fixed total thickness) indicated that failure occurred from internal flaws. Scanning electron microscopy of fracture surfaces revealed that strength-limiting flaws were voids located in the central layer near the interface separating the central and the outer layers.     

Structure and Microwave Dielectric Characteristics of Ca1+xNd1−xAl1−xTixO4 Ceramics

CaNdAlO₄ microwave dielectric ceramics were modified by Ca/Ti co-substitution, and their dielectric characteristics were evaluated along with their structure and microstructures. Ca_{1+ x} Nd_{1− x} Al_{1− x} Ti _x O₄ ( x =0, 0.025, 0.05, 0.10, 0.15, 0.20) ceramics with the relative density of over 95% theoretical density were obtained by sintering at 1400°–1450°C in air for 3 h, where the K₂NiF₄-type solid solution single phase was determined from the compositions of x <0.20, while a small amount of CaTiO₃ secondary phase was detected for x =0.20. With Ca/Ti co-substitution in CaNdAlO₄ ceramics, the dielectric constant (ɛ_r) increased with increasing x , and the temperature coefficient of resonant frequency (τ_f) was adjusted from negative to positive, while the Q × f ₀ value increased significantly at first and reached an extreme value at x =0.025 and the maximum at x =0.15. The best combination of microwave dielectric characteristics were achieved at x =0.15 (ɛ_r=19.5, Q × f ₀=93 400 GHz, τ_f=−2 ppm/°C). The improvement of the Q × f ₀ value primarily originated from the reduced interlayer polarization with Ca/Ti co-substitution, while the decreased tolerance factor, the subsequent increased interlayer stress, and the appearance of CaTiO₃ secondary phase brought negative effects upon the Q × f ₀ value.     

Sintering Kinetics at Isothermal Shrinkage: Effect of Specific Surface Area on the Initial Sintering Stage of Fine Zirconia Powder

The isothermal shrinkage behaviors of fine zirconia powders (containing 2.8–2.9 mol% Y₂O₃) with specific surface areas of about 6 and 16 m²/g were investigated to clarify the effect of specific surface area on the initial sintering stage. The shrinkage of powder compact was measured under constant temperatures in the range of 1000°–1100°C. The increase in specific surface area enhanced the densification rate with increasing temperature. The values of activation energy ( Q ) and frequency-factor term (β₀) of diffusion at initial sintering were estimated by applying the sintering-rate equation to the isothermal shrinkage data. The Q of diffusion changes little but the β₀ increases with the increase in specific surface area. It is therefore concluded that the increase in the specific surface area of fine zirconia powder enhances the shrinkage rate because of an increase in the β₀ at the initial stage of sintering.     

Strength Improvement in Transformation-Toughened Alumina by Selective Phase Transformation

A1₂O₃-15 vol% ZrO₂ bar-shaped ceramic specimens were fabricated in the green state in such a way that the near surface regions consisted of A1₂O₃ and unstabilized ZrO₂ while the bulk consisted of A1₂O₃ and partially stabilized ZrO₂. After sintering, specimens had macroscopic residual compressive surface stresses and balancing interior tensile stresses due to the tetragonal-to-monoclinic phase transformation in the outer layers which occurs during cooling. The depth of the surface region was controlled during green forming. Residual surface compressive stresses at room temperature varied between 100 and 400 MPa depending on the outer-layer thickness. The increased strengths of the three-layer specimens were obtained in the as-fired unground condition, demonstrating that the stresses introduced are the result of transformation of tetragonal zirconia into monoclinic polymorph which occurred upon cooling from the sintering temperature. Specimens with residual surface compressive stresses were 200 MPa stronger at 750°C than monolithic specimens, demonstrating the viability of this approach for improving elevated-temperature mechanical properties.     

Low-Fired (Zn,Mg)TiO3 Microwave Dielectrics

A dielectric ceramic comprised of (Zn_{1- x} Mg _x )TiO₃ ( x = 0 to x = 0.5) with low sintering temperature and promising microwave properties was prepared by applying a semichemical synthesis route and a microbeads milling technique. X-ray diffractometry and thermal analyses results indicated that the phase stability region of the hexagonal (Zn,Mg)TiO₃ extended to higher temperatures as the amount of magnesium increased. The dielectric properties in this system exhibited a significant dependence on the sintering conditions, especially near the phase decomposition temperature. From 950°C, the temperature compensation characteristics occurred as the phase composition changed from hexagonal (Zn,Mg)TiO₃ to two phases: (Zn,Mg)₂TiO₄ and rutile. The magnesium content for zero temperature coefficient (tau_f) was ~3 mol% at 950°C; however, tau_f increased with the sintering temperatures because of the shift of the decomposition temperature.     

Adhesive-Bonded Ca(Mg1/3Nb2/3)O3/Ba(Zn1/3Nb2/3)O3 Layered Dielectric Resonators with Tunable Temperature Coefficient of Resonant Frequency

Ca(Mg_1/3Nb_2/3)O₃ and Ba(Zn_1/3Nb_2/3)O₃ ceramic cylinders with the same diameter were bonded by adhesive with low dielectric loss to yield the layered dielectric resonators, and the microwave dielectric characteristics were evaluated with TE_01δ mode. With increasing the Ba(Zn_1/3Nb_2/3)O₃ thickness fraction, the resonant frequency ( f ₀) decreased, while the effective dielectric constant (ɛ _{r ,eff}) and temperature coefficient of resonant frequency (τ _f ) increased. Good microwave dielectric characteristics were attained for the samples with the Ba(Zn_1/3Nb_2/3)O₃ thickness fraction of 0.5: ɛ _{r ,eff}=34.33, Q × f =57 930 GHz and τ _f =2.6 ppm/°C. Finite-element method was used to predict the microwave dielectric characteristics of the layered resonators and good agreements were attained between the experimental results and predicted ones. Also, both experiment and finite-element analysis indicated that the effects of the adhesive on f ₀, ɛ _{r ,eff}, and τ _f were slight, while that on Q × f value was significant.     

K/Na Ratio Dependence of the Electrical Properties of [(KxNa1−x)0.95Li0.05](Nb0.95Ta0.05)O3 Lead-Free Ceramics

[(K _x Na_{1− x} )_0.95Li_0.05](Nb_0.95Ta_0.05)O₃ (K _x NLNT) ( x= 0.40–0.60) lead-free piezoelectric ceramics were prepared by conventional solid-state sintering. The effects of K/Na ratio on the dielectric, piezoelectric, and ferroelectric properties of the K _x NLNT ceramics were studied. The experimental results show that the electrical properties strongly depend on the K/Na ratio in the K _x NLNT ceramics. The K _x NLNT ( x =0.42) ceramics exhibit enhanced properties ( d ₃₃∼242 pC/N, k _p∼45.7%, k _t∼47%, T _c∼432°C, T _o−t =48°C, ɛ_r∼1040, tanδ∼2.0%, P _r∼26.4 μC/cm², E _c∼10.3 kV/cm). Enhanced electrical properties of the K _x NLNT ( x =0.42) ceramics could be attributed to the polymorphic phase transition near room temperature. These results show that the K _x NLNT ( x =0.42) ceramic is a promising lead-free piezoelectric material.     

Sol–Gel Processing and Microwave Characteristics of Ba(Mg⅓Ta⅔)O3 Dielectrics

The sol–gel method has been developed for the preparation of pure Ba(Mg_1/3Ta_2/3)O₃ ceramics. This involves the reaction of the heterometallic alkoxide Ta₂Mg(OEt)₁₂ with hydrated barium hydroxide Ba(OH)₂·8H₂O. Complete crystallization of the sol–gel-derived powder is achieved at 600°C, leading to a cubic perovskite type phase. After sintering at 1400°C (2–5 h), a trigonal cell arises from Mg–Ta ordering (the degree of order is greater than 0.9), and about 98.5% of the theoretical density is obtained. Preliminary microwave dielectric measurements show that the dielectric constant and the unloaded Q _u of the ceramics are 24.2 and 6750, respectively, at 7.7 GHz.