电容器表面清灰系统

电容器表面漆膜附着力是影响电容器良好的喷漆涂装的关键。良好的电容器表面处理方法又是影响电容器表面漆膜附着力的关键。目前,电容器表面抛丸打毛是电容器表面处理的常用方法之一,但是抛丸打毛后遗留在电容器表面的残灰又是影响电容器表面附着力的不可忽视的原因。传统的表面清灰方法,耗时耗力,且质量不高。电容器表面清灰系统,它清扫均匀,不留死角,大大提高了电容器表面清灰质量。     

提高金属化电容器喷金质量探讨

金属化电容器端面喷金质量对电容器主要电性能指标——tg,起着决定性的影响。分析了影响金属化电容器端面喷金质量的因素,介绍了提高金属化电容器端面喷金质量的方法及如何检查金属化电容器端面喷金质量。     

金属化薄膜电容器的质量控制

电容器是电视机、计算机、显示器、电子测量仪器等电子设备使用的主要电子元器件之一,它在电子线路中广泛用作储能和信息传递。该文介绍了电容器的概念、电容器的特点以及表征电容器质量的主要技术指标,论述了影响金属化薄膜电容器质量的主要因素、外界条件对电容器各技术参数的影响,明确了生产过程中提高金属化薄膜电容器质量的方法和途径。     

铝电解电容器耐纹波能力的研究与控制

介绍了纹波电流对铝电解电容器的寿命影响,分析了影响铝电解电容器耐纹波电流能力的因素,通过选用高品质材料、改进芯组结构及制造工艺来提高铝电解电容器的耐纹波能力.     

脉冲用金属化膜电容器稳态热分析研究

在连续工作过程中，由于温度过高会影响金属化膜电容器的稳定性和安全性，有必要对其稳态进行热分析。通过有限元分析法和试验验证研究了一种脉冲用金属化膜电容器的稳态温度分布情况。分析了电容器内部热传导的过程，计算了电容器热传导载荷和散热边界条件，建立了电容器有限元仿真模型，对其施加热载荷情况下计算了内部温度分布情况，通过试验验证了仿真模型的正确性。并进一步分析了芯子卷绕参数和电容器工作周期对电容器内部温度分布的影响。结果显示：通过稳态热分析可以对电容器性能进行前置评估，对电容器优化设计有一定指导作用。     

金属化薄膜电容器自愈性分析

使用金属化薄膜通过卷绕、热压、喷金、真空浸漆、分选等工序生产的电容器就是金属化薄膜电容器。根据其生产材料不同又分为金属化聚酯薄膜电容器和金属化聚丙烯薄膜电容器。该文介绍了金属化薄膜电容器的结构、生产流程、性能指标,并对金属化薄膜电容器的自愈性进行了分析,论述了影响金属化薄膜电容器自愈性的内部因素和外部因素,根据生产现状提出了工艺改进措施。     

浅析液态铝电解电容器的失效机理及可靠性

简述了液态铝电解电容器的结构与制造工艺流程,归总了其失效模式。从制程和应用两个方面﹐探讨了液态铝电解电容器的失效机理及导致原因。使用环境温度及纹波电流是影响液态铝电解电容器寿命的主要因素,文中阐述了温度及纹波电流影响寿命的机制。应用Arrhenius方程的形式描述了液态铝电解电容器的寿命估算方法。     

采用气体浸渍材料的新型长寿命有机薄膜电容器

局部放电现象会给金属化有机薄膜电容器的金属化层、介质及喷金端面产生不良影响,影响电容器寿命。采用SF6气体浸渍材料和特殊工艺制成的GMKP电容器避免了局部放电影响。     

电力电子变换器中滤波电容参数设计方法

在电力电子变换器中,滤波电容可以抑制电压脉动,消除谐波,其参数大小对变换器的性能有着重要影响。本文首先分析滤波电容器的特性,得出影响电容器滤波效果的各个因素,然后介绍了几种常用的滤波电容器参数设计方法,最后通过一个全桥变换器进行了仿真验证,有助于学生更好地掌握滤波电容器的参数设计。     

材料的纯度对铝电解电容器耐久性的影响

为满足整机对铝电解电容器提出的１０５℃２０００ｈ及１０５℃５０００ｈ高可靠性要求,从溶质纯度、吸氢剂纯度以及电容器材料含水量等方面进行实验,研究了其对电容器耐久性的影响。实验结果表明,所用原材料的纯度及含水量均是影响铝电解电容器耐久性的重要因素。指出提高原材料纯度并进行耐久性考核,严格电容器芯子干燥工艺,尽快拟定１０５℃系列产品的国家标准的必要性。     

Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors

This paper presents the results of the effect of NO annealing temperature and annealing time on the interfacial properties of n-type 4H-SiC MOS capacitors. The interface trap density measured by conductance technique at 330°C decreases as NO annealing temperature increases from 930°C to 1130° and annealing time is extended from 30 min. to 180 min. The changes in effective oxide charge between room temperature and high temperature are calculated and used to compare different n-type 4H-SiC MOS capacitors. Higher NO annealing temperature and longer NO annealing time decrease the change in effective oxide charge, which is consistent with the NO annealing temperature/time dependence of interface trap density measured by conductance technique. However, NO annealing temperature has more pronounced influence on the SiO₂/SiC interface than NO annealing time.     

宽温小型低压铝电解电容器

重点介绍铝电解电容器工作电解液中常用溶剂的特性、电解质理论的溶剂化效应原理，基于这一原理，开发出具有低饱和蒸汽压、物化性能稳定的无水体系电解液，用该电解液制成了体积小、工作温度范围宽（－４０～＋１０５℃）、电性能优良的宽温小型化低压铝电解电容器。     

Temperature influence on energy losses in MOSFET capacitors

The paper deals with the investigation of energy dissipated during processes of charging and discharging of nonlinear MOSFET capacitors. The analysis concerns the CMOS circuits. The effect of simultaneous change of gate-to-source and drain-to-source voltages of one transistor is taken into account. The temperature influence on nonlinear MOSFET capacitors and energy gathered by them is also considered. The theoretical assessment is compared with HSPICE simulation results (BSIM3v3 model) for 0.35 μm technology.     

400V系列宽温铝电解电容器

着重探讨了焊针式引出４００Ｖ系列宽温（－４０～＋１０５℃）铝电解电容器研制过程中所遇到的主要难题，提出了高压１０５℃彩电用产品的一些设计思想。经过大量实验，在几乎全部采用国产原材料的基础上，研制成功了性能良好的宽温产品，耐久性试验通过１０００ｈ，高温贮存５００ｈ     

电化学聚合温度对聚吡咯铝电解电容器性能的影响

采用化学聚合和电化学聚合两步法制作聚吡咯(PPy)铝电解电容器,研究了电化学聚合温度对PPy的微观形貌及聚吡咯铝电解电容器的电容和等效串联电阻Res的影响,结果表明:在10～20℃聚合所得到的聚吡咯铝电解电容器的电性能都比较理想,尤以15℃电化学聚合的为最优,其电容最大为12.6μF,Res最小为32mΩ。并且在此温度条件下制备的PPy致密性高,颗粒大小均匀。     

Charging–discharging characteristics of a wound aluminum polymer capacitor

This study characterized aluminum polymer capacitors, especially when they are charging and discharging. Tests were conducted under various conditions. The following environments were considered: three high-temperature conditions, two high temperature/high humidity conditions, and room temperature. Various operating conditions were also considered, such as charging–discharging, operating, and storage. The test results showed that the capacitance of the wound polymer aluminum capacitor degraded with charging–discharging at low temperature. At lower temperatures, this characteristic accelerated but was mitigated with a dry electrolyte. The degraded capacitances partially recovered when the capacitors were stored at a high temperature. These characteristics were not observed for a conventional liquid aluminum capacitor. This unreported special characteristic of polymer aluminum capacitors should be considered when designing systems such as power electronics. Polymer capacitors are known for their high reliability, especially at high temperatures. At low temperatures, however, the charging–discharging characteristic should be carefully considered. This paper reports on this characteristic of polymer capacitors for consideration by industries.     

Influence of different deposition conditions of top and bottom electrode on the reliability of Sr0.8Bi2.2Ta2O9 ferroelectric capacitors

In this study, the reliability (fatigue, imprint, and retention) of Pt/SBT/Pt capacitors was investigated. For non-integrated test capacitors, using a different process for top and bottom electrode formation, fatigue degradation is larger than for integrated capacitors using symmetric top and bottom electrode deposition process. Also, for the non-integrated capacitors, imprint behavior and retention loss were observed to depend on the voltage polarity. From hysteresis as well as leakage characteristics, these effects were attributed to the presence of a built-in field favoring the polarization of SBT from the bottom to the top electrode in non-integrated capacitors. The built-in field was attributed to defect generation during the top electrode sputtering at room temperature. For the integrated capacitors, whereby the top electrode is deposited using the same high temperature process (>150 °C) as the bottom electrode, neither imprint degradation nor retention loss was observed under the applied conditions, showing excellent reliability of integrated SBT capacitors.     

Physical understanding and modeling of SANOS retention in programmed state

SANOS technology is the first time accurately analyzed and modeled. Firstly, the retention is studied on capacitors to determine the main retention mechanisms. The electron detrapping in the silicon nitride, followed by tunneling through the aluminum oxide is found to be the dominant mechanism causing the retention loss. The modeling of this effect reproduces the observed temperature, gate work function and window dependency. Secondly, these results are applied to scaled devices where the retention is dominated by the same mechanisms. The difference in the retention loss between capacitors and devices is explained by a different field distribution in the gate dielectric. Thirdly, the issue of lateral redistribution occurring at high temperature in scaled transistors is analyzed by 2D simulations and retention tests in SONOS devices.     

Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors

GaN metal-oxide-semiconductor (MOS) capacitors have been used to characterize the effect of annealing temperature and ambient on GaN-insulator interface properties. Silicon dioxide was deposited on n-type GaN at 900 /spl deg/C by low-pressure chemical vapor deposition and MOS capacitors were fabricated. The MOS capacitors were used to characterize the GaN-SiO/sub 2/ interface with a low interface-state density of 3 /spl times/ 10/sup 11/ cm/sup -2/eV/sup -1/ at 0.25 eV below the conduction band edge, even after annealing in N/sub 2/ at temperatures up to 1100 /spl deg/C; however, insulator properties were degraded by annealing in NO and NH/sub 3/ at 1100 /spl deg/C.     

Accelerated testing for failures of tantalum capacitors

This study focused on the use of accelerated testing to find out why tantalum capacitors fail. Stress effects of humidity, temperature, and ripple voltage were examined in different combinations. Results show that a standard 85/85 test with combined enhanced moisture and temperature does not result in failure of tantalum capacitors in 2500 h. However, with added ripple voltage, failures may occur in a relatively short time. High relative humidity and high temperature both affect water diffusion, but apparently increased ripple voltage in 85/85 testing causes tantalum capacitor characteristics to weaken and capacitors to fail. The paper elaborates on the possible reasons.