CaSi2O2N2:Ce/Tb、Eu叠层纤维膜的制备及其荧光性能研究

采用分步静电纺丝与气相还原氮化相结合的方法, 通过控制纺丝液的组成和纺丝时间, 制备了用于白光LED的CaSi₂O₂N₂:Ce/Tb、Eu叠层荧光纤维膜。采用SEM、TEM、XRD和PL等对材料进行了表征。样品在宏观上呈现完整薄膜状态, 微观上保持纤维结构, TEM照片显示荧光纤维由小晶粒组成。XRD分析结果表明: 1300℃氮化1 h可以得到CaSi₂O₂N₂晶型, 稀土离子的掺入没有改变CaSi₂O₂N₂的主晶相。在近紫外激发光照射下, CaSi₂O₂N₂:Ce/Tb、Eu叠层纤维膜两侧具有不同发射光。激发光照射Eu离子掺杂面能够降低叠层纤维膜的发射光重复吸收。将制备的CaSi₂O₂N₂:Ce/Tb、Eu叠层荧光纤维膜封装于近紫外激发的LED芯片中, 可以实现白光发射。     

Eu2+和Dy3+掺杂浓度对Sr2MgSi2O7材料的荧光和长余辉性能的影响

采用高温固相法制备得到Sr₂MgSi₂O₇: Eu²⁺和Sr₂MgSi₂O₇: Eu²⁺, Dy³⁺发光粉, 并详细研究了Eu²⁺和Dy³⁺的掺杂浓度对Sr₂MgSi₂O₇材料的荧光和长余辉性能的影响。所有样品都在470 nm附近呈现较宽的发光峰, 这可归因于Eu²⁺离子的4f⁶5d→4f⁷电子能级跃迁。当Eu²⁺掺杂浓度超过淬灭浓度, 其浓度淬灭效应导致发光粉的荧光强度下降和余辉时间减短。同时, 发射峰的峰位随Eu²⁺浓度的增加而发生红移, 这主要由于晶体场分裂能和斯托克斯位移变化造成的, 而电子云扩大效应变化所产生的影响相对较弱。Dy³⁺离子会抑制荧光, 但有助于延长余辉时间。当其掺杂浓度超过10mol%时, Eu²⁺\Dy³⁺离子通过隧道复合机制发生浓度淬灭, 从而使材料的长余辉寿命减少。     

Sr2Si5N8:Eu2+荧光粉的制备及其发光性能研究

以Sr₂CO₃、Si₃N₄和Eu₂O₃为原料, 以C为主要还原剂, 采用碳热还原氮化工艺合成Sr₂Si₅N₈:Eu²⁺荧光粉, 着重研究了C、Sr₂CO₃添加量及Eu²⁺浓度对产物物相及发光性能的影响。研究结果表明: 当C与Si₃N₄的摩尔比 n_c/=9/5时,合成出Sr₂Si₅N₈:Eu²⁺单相荧光粉, 添加适当过量的Sr₂CO₃可提高合成产物的N含量, 且荧光粉的发光强度与其N含量呈现正相关关系。在450 nm蓝光激发下, 受Eu²⁺的4f⁶5d¹ → 4f⁷跃迁作用, Sr₂Si₅N₈:Eu²⁺荧光粉在550~700 nm波段范围产生非对称宽带发射。随着Eu²⁺掺杂浓度由1.5mol%增加到20mol%, 荧光粉的发光强度先增强后减弱, 达到2mol%时发生浓度淬灭现象; 发射主峰由608 nm逐步红移至641 nm; CIE色坐标从(0.606, 0.393)位移至(0.656, 0.343), 是一种可用于白光LED的优质红色荧光粉。     

Si3N4掺杂氮化对Sr3SiO5:Eu2+荧光粉发光性能的影响

采用高温固相法制备Si₃N₄掺杂氮化Sr_2.99SiO_5-6xN_4x:0.01Eu²⁺荧光粉。采用XRD、EDS和SEM测试结果表明: N^3-进入Sr₃SiO₅基质晶格中取代部分O^2-离子, 形成了单一相Sr_2.99SiO_5-6xN_4x:0.01Eu²⁺固溶体。PL&PLE荧光光谱测试结果显示, Sr_2.99SiO_5-6xN_4x:0.01Eu²⁺荧光粉在344nm紫外光的激发下发射出红橙光, 属于Eu²⁺离子典型的 4f⁶5d¹→4f⁷电子跃迁。随着N浓度的增加, Sr_2.99SiO_5-6xN_4x:0.01Eu²⁺荧光粉发射光谱和激发光谱的强度明显增强。热稳定性测试结果表明, Si₃N₄掺杂氮化能够显著提高Sr₃SiO₅:Eu²⁺荧光粉的热稳定性。通过Arrhennius模型拟合结果表明横向穿越过程(crossover)引起的Sr₃SiO₅:Eu²⁺荧光粉氮化前后的温度猝灭。     

YVO4∶Eu3+,Bi3+红色荧光粉的水热合成及其荧光性能

以Y₂O₃、Eu₂O₃、Bi(NO₃)₃·H₂O、浓HNO₃、偏钒酸铵、氨水、无水乙醇和一缩二乙二醇为原料,采用聚乙烯吡咯烷酮(PVP)辅助水热法合成YVO₄: Eu³⁺, Bi³⁺纳米颗粒。使用X射线衍射(XRD)、扫描电镜(SEM)、红外光谱(IR)和荧光光谱(FL)等手段对产品进行了表征和分析。结果表明：合成的样品为YVO₄: Eu³⁺, Bi³⁺纳米颗粒,均具有四方晶相结构,其微结构随反应溶液的的pH值变化。YVO₄: Eu³⁺, Bi³⁺纳米颗粒在619 nm处有较强的红光发射(电偶极跃迁⁵D₀→⁷F₂),在594 nm有较弱的橙光发射(磁偶极跃迁⁵D₀→⁷F₁)。随着Eu/Bi比值的增大材料的荧光先增强后减弱,在Eu/Bi比值为5时样品的红光发射最强。溶液的pH值影响YVO₄: Eu³⁺, Bi³⁺纳米晶的发光强度,其中pH值为10时的样品其红光发射最强。并探讨了YVO₄: Eu³⁺, Bi³⁺纳米晶的发光机理。     

柔性Eu3+掺杂SiO2纳米纤维薄膜的制备及其发光性能

采用溶胶-凝胶法结合静电纺丝技术制备了柔性Eu³⁺掺杂SiO₂纤维薄膜, 采用SEM、XRD、FT-IR、TG和PL等测试方法对材料进行表征。Eu³⁺掺杂SiO₂纤维薄膜在热处理后纤维直径变小, 纤维表面平滑无粘连。通过控制升温速度, 纤维薄膜经热处理后仍具有较高的力学强度, 750℃热处理后其拉伸强度可达4.31 MPa, 经过多次弯曲仍能保持原样。在392.6 nm光源激发下, Eu³⁺掺杂SiO₂纤维薄膜在570~670 nm附近呈现出来自于⁵D₀→⁷F_J的发射峰。当Eu³⁺掺杂浓度为8mol%时, 经过750℃热处理后Eu³⁺掺杂SiO₂纤维薄膜的发光强度达到最大值。     

Eu2+/Tb3+掺杂的Sr2Si5N8基荧光粉的制备与发光性能

采用碳热还原氮化法合成了Eu²⁺/Tb³⁺掺杂的Sr₂Si₅N₈基荧光粉, 并重点研究了Tb³⁺-Eu²⁺共掺时Sr₂Si₅N₈基荧光粉的发光性能。研究结果表明: 由于Tb³⁺的f → d间的跃迁是自旋允许的, Sr₂Si₅N₈:Tb³⁺在330 nm激发光下, 在490、543、585和623 nm四处各有一发射峰, 它们分别来源于Tb³⁺的⁵D₄ → ⁷F_j (j = 6、5、4、3)能级跃迁; 掺入Tb³⁺对Sr_1.96Si₅N₈:0.04Eu²⁺的激发谱和发射谱的形状及峰位无明显影响, 当共掺离子Tb³⁺浓度为x = 0.01时, 样品发射强度比未共掺的Sr_1.96Si₅N₈:0.04Eu²⁺提高了约20%, Tb³⁺主要通过电多极能量传递的方式转向Eu²⁺。     

柔性YAG-Al2O3纳米纤维膜负载C3N4的水处理性能研究

采用溶胶-凝胶法和静电纺丝技术制备了柔性钇铝石榴石-氧化铝(YAG-Al₂O₃)纳米纤维膜，然后使用尿素包埋法将石墨相氮化碳(g-C₃N₄)引入到纤维膜孔隙中，制备了自支撑光催化降解钇铝石榴石-氧化铝/氮化碳(YAG-Al₂O₃/C₃N₄)复合材料，表征了材料的形貌结构和力学行为，并研究了其在亚甲基蓝污水处理中的可见光催化降解性能。结果表明，YAG-Al₂O₃纳米纤维膜具有优异的柔韧性，YAG-Al₂O₃/C₃N₄复合材料在厚度方向具有良好的弹性，两者均为自支撑材料。100min内复合材料对亚甲基蓝的降解率可达96%以上，循环3次后降解率仍保持在94%左右。催化反应动力学符合Langmuir-Hinshelwood(L-H)模型，说明复合材料具有长期稳定且高效的催化降解效果。     

具有持续反应活性的g-C3N4/Sr2MgSi2O7:Eu2+,Dy3+复合材料的光学-催化行为研究

为促进环境友好型光催化技术的应用推广,通过热解聚合方式将g-C₃N₄负载于多孔Sr₂MgSi₂O₇:Eu²⁺,Dy³⁺蓝色长余辉荧光粉上,制备具有持续反应活性的g-C₃N₄/Sr₂MgSi₂O₇:Eu²⁺,Dy³⁺复合材料。首次采用累积污染物降解效率等一系列指标评价材料在光照及暗态下综合去除污染物效果。通过微观表征手段和NO去除试验研究了单组分复配质量比对复合材料的光学及催化性能的影响。结果表明,g-C₃N₄的复合对Sr₂MgSi₂O₇:Eu²⁺,Dy³⁺的荧光强度和余辉性能产生了不利影响;但光照下,提高的光生载流子分离效率和光吸收...     

白光g-C3N4/CaMoO4∶Eu3+荧光粉的合成及发光性能研究

采用高温固相法合成CaMoO₄∶Eu³⁺红色荧光粉，采用热解法制备g-C₃N₄蓝色荧光粉，并制备复合荧光粉g-C₃N₄/CaMoO₄∶Eu³⁺。利用X射线衍射、荧光光谱分析、热猝灭分析对荧光粉进行了表征。结果表明，CaMoO₄∶Eu³⁺红色荧光和复合荧光粉g-C₃N₄/CaMoO₄∶Eu³的衍射峰与CaMoO₄粉末标准卡PDF#85-1267的衍射峰相匹配。在393nm的激发下，g-C₃N₄在462nm处发蓝绿色光，CaMoO₄∶Eu³⁺在616nm处发红色光。通过改变g-C₃N₄与CaMoO₄∶Eu^...     

Long lasting phosphorescence of Sr4Al14O25:Eu,Dy thin films by magnetron sputtering

This paper reports the preparation process and the long lasting phosphorescence of the Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ thin films obtained by magnetron sputtering. Phosphorescence was achieved by annealing the films in reducing atmosphere. Sr₄Al₁₄O₂₅ thin film was obtained when the films were treated at 1200 °C, while SrAl₂O₄ was generated as the intermediate phase during the annealing process. Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ film generated an emission at 485 nm, and SrAl₂O₄:Eu²⁺,Dy³⁺ film showed an emission peaking at 515 nm. Afterglow characteristics were observed for both films, and Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ film showed a better afterglow property than the SrAl₂O₄:Eu²⁺,Dy³⁺ film due to a deeper trap level and a higher trap concentration formed in the thin films.     

Valency states of Yb, Eu, Dy and Ti ions in Li2B4O7 glasses

Absorption and emission spectra of Eu and Dy, Yb and Ti ions in Li₂B₄O₇ glasses grown in oxygen and hydrogen gas atmospheres were measured for valency states and lattice-sites analysis. For the Li₂B₄O₇ glass doped with Eu²⁺, Eu³⁺ and Dy³⁺ ions which were grown in oxidizing and reducing atmospheres, absorption and emission bands due to these ions were investigated before and after γ-irradiation. For the Yb³⁺-doped Li₂B₄O₇ glass, a weak, broad band was observed near the sharp 976.3 nm absorption band. The origin of this band is discussed in comparison with other glasses. Moreover, irradiation experiments using γ-rays were also performed in order to investigate the possibility of valency change of Yb ions. It was found that Ti⁴⁺ ions, which are produced under oxidizing atmosphere, change to Ti³⁺ ions after γ-irradiation with a dose of 10⁵ Gy. An additional absorption band observed at about 500 nm is due to the Ti³⁺ ions accompanied by charge-compensating vacancy and does not give any emission.     

Preparation, patterning and luminescent properties of nanocrystalline Gd2O3:A (A=Eu, Dy, Sm, Er) phosphor films via Pechini sol–gel soft lithography

Nanocrystalline Gd₂O₃:A (A=Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺) phosphor films and their patterning were fabricated by a Pechini sol–gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 °C and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 μm). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd₂O₃ phosphor films due to an efficient energy transfer from Gd₂O₃ host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 °C, and the optimum concentrations for Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd³⁺ in Gd₂O₃ films, respectively.     

助溶剂对Ba3Si6O12N2:Eu2+氮氧化物荧光粉制备及光学性能的影响

采用微波法制备了Eu²⁺ 掺杂的Ba₃Si₆O₁₂N₂绿色氮氧化物荧光粉, 着重研究了不同助熔剂: BaCl₂、H₃BO₃、KF和NH₄F对Ba₃Si₆O₁₂N₂:Eu²⁺发光性能的影响。利用X射线衍射(XRD)、荧光光谱仪、扫描电子显微镜(SEM)和量子效率(QE)等检测方法研究了不同助溶剂的作用机理。研究结果表明: 添加助溶剂能够显著提高荧光粉的发光强度, 添加不同助溶剂制备荧光粉的发光强度大小依次为H₃BO₃ > KF > BaCl₂ >无助溶剂 > NH₄F。当添加1.0wt%的H₃BO₃时, 所制备的荧光粉粒径分布比较均匀, 形貌较好, 荧光粉的发光强度最大, 且与不添加助溶剂制备的荧光粉相比, 有较高的量子效率和吸收效率, 不同温度下的发射光谱表明其热淬灭性低, 荧光寿命较短。     

Effect of heat treatment on photoluminescence behavior of BaMgAl10O17:Eu phosphors

The blue phosphor of BaMgAl₁₀O₁₇:Eu²⁺ (BAM) powders were prepared by solid-state reaction. The thermal degradation of BAM phosphor significantly reduces the intensity of the blue emission. BAM is reduced by an amount of 50% after heating at around 800 °C for 1 h. Photoluminescence (PL) excitation and emission spectra showed that the blue emission of 450 nm peak decreased with increasing annealing temperature. The ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transition of Eu³⁺ were observed at 590 and 615 nm emission lines over 1100 °C. Electron paramagnetic resonance (EPR) spectrum also detected two signals of Eu²⁺, corresponding to g=3.7156(9) for 88 mT, and g=2.9507(9) for 133 mT. X-ray absorption near edge structure (XANES) spectrum decreased the intensity of Eu²⁺ for 6977 eV with increasing annealing temperature, while high-energy peak of Eu³⁺ for 6984 eV was increased. The combined use of X-ray and neutron data by the Rietveld refinement appears to support that the secondary phase of EuMgAl₁₁O₁₉ magnetoplumbite structure in BAM may be formed by heat treatment.