Residual crystallinity of vapor-deposited tin films

Using transmission electron microscopy and selected-area electron diffraction techniques, the residual crystallinity of vapor-deposited tin thin films has been investigated. At substrate temperatures above about 0.8T_m, liquid-like particles were observed to be single crystals, with no evidence of grain boundaries or related crystallographic inhomogeneities. A significant portion of the single-crystal particles exhibited epitaxial features, and they appeared to have solidified by a liquid-solid phase transformation beginning at the particle-substrate interface and propagating in the [001] direction, with the (00$\text{1}$) plane facing the (001) NaCl substrate. The observation of crystal facets supports this model. For substrate temperatures of approximately 0.7T_m or below, the tin films were composed of island structures. An examination of the crystallographic and morphological features of the tin films suggests a coalescence mechanism consistent with that outlined by Pocza. For substrate temperatures greater than 0.8T_m, coalescence is dominated by liquid drops with liquid drops. Below 0.8T_m, the mechanism shifts from one of liquid drops with crystallites to one dominated primarily by the coalescence of crystallites with crystallites below 0.6T_m.     

The influence of substrate temperature and sputtering gas atmosphere on the electrical properties of reactively sputtered indium tin oxide films

Tin-doped indium oxide (ITO) films were prepared by d.c. magnetron sputtering of an In-Sn alloy target, and the influence of the sputtering gas atmosphere and substrate temperature on their electrical properties was studied.The conditions for the deposition of the transparent ITO films were divided into three regions by varying the sputtering gas pressure. The first region was characterized by a high efficiency of oxygen gas consumption for film formation and a high deposition rate. In the second region the as-deposited films contained slightly less than the stoichiometric amount of oxygen. The third region was characterized by a low efficiency of oxygen consumption and a low deposition rate. The ratio of the amount of oxygen consumed to the amount of oxygen admitted to the sputtering chamber was about 15% when films with resistivities as low as 6 × 10^-4Ω cm were prepared at the optimum oxygen partial pressure.In the case of metallic deposited in an oxygen-poor atmosphere the carrier mobility, which mainly depends on the crystal structure, increased and the carrier concentration, which depends on the number of oxygen vacancies and donor centres, decreased with increasing substrate temperature. The opposite results were obtained for films deposited in an oxygen-rich atmosphere. Well-defined grain growth was observed, particularly for metallic films deposited at high substrate temperatures, and this caused the low carrier mobility.Subsequent heat treatment improved the resistivity of films deposited at substrate temperatures below 100°C, mainly because of the increase in carrier mobility, but it had little effect on the resistivity of films deposited at substrate temperatures above 150 °C because the increase in carrier mobility was cancelled by the decrease in carrier concentration.     

The effects of the substrate temperature on sputter-deposited niobium films

The superconducting transition temperatures and the structural properties of Nb films prepared by sputtering have been studied over a deposition temperature range of ?130 to 700°C. Niobium films show a preferred orientation in the <110> direction perpendicular to the substrate surface. The transition temperatures of Nb films deposited onto cryogenic substrates were greatly reduced. A close correspondence between thed spacingd ₁₁₀ and superconductingT _c has been found. TheT _c of Nb films decreases rapidly with increasing spacingd ₁₁₀.     

气压和偏流对高掺硼金刚石晶体性质的影响(英文)

采用热丝化学气相沉积法,改变工作气压和偏流,在硅基片上沉积了高掺硼金刚石膜。利用扫描电镜(SEM)、拉曼光谱和X射线衍射仪对沉积的金刚石膜表面形貌和结构进行表征。结果显示:当气体压强从3kPa降低到1.5kPa时,金刚石膜有较平的表面形貌和和较好的晶形,薄膜的晶体性质得到良好的改善。但是继续降气体压强,从1.5kPa到0.5kPa时,却呈现出相反的趋势。固定气体压强(1.5kPa),改变偏流,结果表明:适当的偏流(3A)可以改善掺硼金刚石的质量,偏流较高会导致薄膜中非金刚石相增多。     

The substrate influence on the magnetization of nickel electrodeposited thin films

The effects of diffusion of substrate copper atoms into the film as well as substrate stresses on both saturation magnetization and coercive force of annealed electrodeposited Ni films have been investigated.     

衬底温度对CuI薄膜微结构与性能的影响

采用喷射沉积技术，探讨不同的衬底温度对CuI薄膜的微结构与性能的影响。通过x射线衍射谱，场发射扫描电子显微镜，霍尔测试仪和紫外．可见光分光光度计等测试了CuI薄膜的微结构、表面形貌和光电性能。研究结果表明，衬底温度为120℃时CuI薄膜的结晶性较好，薄膜表面相对均匀致密。可见光透过率随着衬底温度升高先增大后减小，在衬底温度为120℃时最高，近76％，适合作Al：ZnO／p-CuI／n-CIS薄膜太阳能电池的缓冲层。     

The electrical properties of polycrystalline tin films evaporated onto a cooled substrate

The electrical properties of polycrystalline tin films evaporated in vacuum (p≈10^-6 Torr) onto fused quartz substrates at temperatures T_e of 157 and 142 K were examined in situ. The influence of annealing temperature on the film resistivity and structure was studied. It was found that the size effect in polycrystalline tin films is consistent with the Wissmann model. On the basis of this model it was shown that grain boundary scattering is considerable and depends on the annealing temperature. The electron mean free path for the temperature range 100–370 K was found to vary from 17.9 to 5 nm.     

The influence of substrate temperature on the properties of aluminum-doped zinc oxide thin films deposited by DC magnetron sputtering

Transparent, conducting, aluminum-doped zinc oxide (AZO) thin films were deposited on Corning 1737 glass by a DC magnetron sputter. The structural, electrical, and optical properties of the films, deposited using various substrate temperatures, were investigated. The AZO thin films were fabricated with an AZO ceramic target (Al₂O₃:2 wt%). The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity was 6.0 × 10⁻⁴Ω cm, with a carrier concentration of 2.7 × 10²⁰ cm⁻³ and a Hall mobility of 20.4 cm²/Vs. The average transmittance in the visible range was above 90%.     

Resistivity and temperature coefficient of resistivity of tin films

The electrical resistivity and the temperature coefficient of resistivity of tin films (490 to 5000 Å) deposited onto glass substrates at room temperature (30° C) were measured in situ in the temperature range 30 to 150° C. It is concluded that Mayadas-Shatzkes theory reproduces the experimental observations more faithfully than Fuchs-Sondheimer's theory.     

基片及基片温度对Fe4N薄膜的形成及其特性的影响

以双离子束溅射法在（111）硅片和玻璃上分别制得了单－γ′－Fe4N薄膜，研究了基片及基片温度对薄膜的结构和磁性能的影响，结果表明，（111）硅片为基片，可制得无晶粒择优取向的单一γ′－Fe4N相；而以玻璃为基片，在基片温度为160℃时，则可制得具有（100）面晶粒取向的单一γ′－Fe4N相薄膜，与无晶粒择优取向的γ′－Fe4N相比较，具有（100）面晶粒取向的γ′－Fe4N相的矫顽力较低，易达到磁饱和，但二者的饱和磁化强度基本一致。     

The effect of substrate temperature on the oxidation behavior of erbium thick films

The effect of substrate temperature on the oxidation behavior of erbium thick films, fabricated by electron-beam vapor deposition (EBVD), was investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The erbium thick film is black when it is deposited at substrate temperature below 450 °C and turns gray at higher substrate temperature in a vacuum pressure of approximately 1.5 × 10⁻⁶ Torr, which indicates that the thickness of erbium oxide layer formed on the surface of erbium films increases with the decreasing substrate temperature. XPS depth profile results demonstrate that the thickness of the surface erbium oxide layer of erbium film deposited at substrate temperature of 550 and 350 °C are about 50 and 75 nm, respectively. The thicker oxide layer at lower substrate temperatures may be attributed to grain size and the dynamic vacuum condition around the substrates. Other possible factors involved in the oxidation behavior are also discussed.     

Effects of substrate temperature and substrate material on the structure of reactively sputtered TiN films

Stoichiometric TiN films were reactively magnetron sputtered in an Ar-N₂ atmosphere. The films were deposited at various substrate temperatures in the range 200–650°C onto two types of substrate material, high speed steel and stainless steel. The microstructure of the films obtained was investigated by the use of a transmission electron microscope and the morphology was studied in a scanning electron microscope. Measurements of the hardness were also performed. The analysis of the microstructure shows that the growth of the film is markedly influenced by the substrate material. In particular, the high speed steel substrates were found to have a considerable influence on the microstructure. The vanadium carbide particles in these steels, which have a good lattice match to TiN, stimulate a localized epitaxial growth to occur on these carbide particles. This results in a microstructure consisting of large grains surrounded by small grains. The shape of the large grains is influenced by the temperature. In the development of these large grains cracks and/or voids occur in and around the grains at substrate temperatures above 400°C and the hardness drops by about 20%. No large grains were found on films deposited onto stainless steel and their hardness increases slightly with temperature. High hardness for films deposited onto the high speed steel substrate at temperatures above 400°C can also be obtained if a substrate bias is used. Ion bombardment during film growth suppresses the formation of the large grains with voided or cracked boundaries because of a continuous renucleation process. The formation of the different microstructures is discussed in terms of surface energy minimization and thermally activated processes as surface and grain boundary migration.     

Fluctuation conductivity of tin films below the superconducting transition temperature

Measurements have been carried out of the temperature dependence of the fluctuation-induced excess electrical conductivity of thin (thickness much less than the Ginzburg-Landau coherence length) superconducting films of tin below the transition temperature. Two types of specimen were investigated: (a) films deposited on a glass substrate held at 300 K and (b) films deposited on a glass substrate at 300 K and then covered by a protective layer of germanium. Special care was taken to ensure sample homogeneity. Analysis of the results shows that the fluctuation parameter, ε_c, is not affected by the germanium layer. Its value is, however, much larger than that predicted by the theory of Kajimura, Micoshiba, and Yamaji.     

退火对氧化锌薄膜结晶性能的影响

采用射频磁控溅射法在(001)硅片上制备了ZnO薄膜,利用X射线衍射对薄膜的制备工艺进行了研究,结果表明,基板温度、溅射功率、氩氧比、总气压在一个较大的范围内变化时都可实现薄膜的c轴择优取向生长.随后对薄膜进行了空气退火并利用摇摆曲线表征薄膜的结晶质量,摇摆曲线的半高宽随退火温度的提高而减小,700℃退火后FWHM为2.5°.     

Properties of indium tin oxide thin films prepared on the oxygen plasma-treated polycarbonate substrate

We prepared the indium tin oxide thin (ITO) film on the polymer substrate by using facing target sputtering method. To obtain a smooth surface of the ITO thin film for application of OLEDs, before deposition of the ITO thin film, the polymer substrate was given plasma surface treatment. The electrical and surface properties were measured by a Hall Effect measurement and a contact angle measurement. The structural and optical properties were evaluated by an X-ray diffractometer, an atomic force microscope and a UV/VIS spectrometer, respectively. All ITO thin films deposited on plasma-treated polymer substrate showed an average transmittance over 85% in visible range, and the lowest resistivity was 4.17 × 10^− 4 Ω cm.     

Investigation of substrate influence on tin dioxide nanostructures synthesized using horizontal furnace

SnO2 nanostructures were directly synthesised by chemical vapour transport on different substrates in a horizontal furnace. The influence of substrate on the morphology of these nanostructures was investigated by changing the substrate type, coating, and temperature. The SnO2 nanowires and nanorods were one dimensional (1D) structures with widths and lengths of 50-200 nm and several micrometers respectively. Scanning electron microscope (SEM) images show formation of short nanorods with lengths of less than 1 microm on indium-tin oxide (ITO) substrates. The effect of substrate temperature on growth was studied. SnO2 nanowires were obtained using silicon substrate, and the effect of Au coating on the size and morphology of these structures was proposed. By coating the Si wafer with a thin layer of Au, the size of the nanostructure was reduced and the length increased. The differences in size and morphology are shown by transmission electron microscopy (TEM). X-ray diffraction (XRD) spectra show tetragonal structures for both substrates.     

Substrate temperature effects on the tin oxide films prepared by spray pyrolysis

Indium-doped tin oxide films were prepared by the spray pyrolysis technique at different substrate temperatures ranging from 400–525 C. Texture coefficients for (200) and (112) reflections of tetragonal SnO₂ were calculated. The surface morphology of the prepared films was revealed by using scanning electron microscopy. A dendrite structure was observed in the films deposited at a substrate temperature of 525 C. The obtained specific resistances were correlated with those obtained from X-ray diffraction analysis and scanning electron microscopy. A study of the effect of film thickness on the plane of preferred orientation was carried out.     

Effect of doping and substrate temperature on the structural and optical properties of reactive pulsed laser ablated tin oxide doped tantalum oxide thin films

5% SnO₂ doped tantalum oxide (Ta₂O₅) films are deposited on quartz substrates at different substrate temperatures of 300 K, 773 K, 873 K and 973 K using pulsed laser deposition in an oxygen ambient of 0.002 mbar. Undoped Ta₂O₅ films are also deposited on quartz substrates kept at substrate temperature 973 K under the same oxygen ambient using PLD. The films are characterized using GIXRD, AFM, FTIR, micro-Raman and UV-visible spectroscopy. Undoped films show an amorphous nature even at a substrate temperature of 973 K, whereas, SnO₂ doped films show crystalline nature even for deposition at 300 K. As far as our knowledge goes, this is the first report of crystalline Ta₂O₅ films deposited at room temperature. The average size of the crystallites calculated using the Debye-Scherrer formula, shows that the size of the crystallite decreases with increase in substrate temperature. FTIR and micro-Raman spectroscopic analysis reveals the presence of Ta-O-Ta, O-Ta and O-Ta-O vibrational bands in the films. Raman analysis indicates that the addition of SnO₂ suppresses the bond formation and changes the magnitude of bonds in Ta₂O₅. AFM patterns reveal the formation of Ta₂O₅ nanorods of diameter about 100 nm for the doped film deposited at 973 K. Optical transmittance of the films is found to be sensitive to substrate temperature as well as to the presence of SnO₂. A blue shift in the band-gap of the doped films is observed. The decrease of band-gap with decrease of particle size observed for SnO₂ doped films can be due to a band-bending effect. The transmittance of the films is found to depend on SnO₂ doping and substrate temperature.     

Ag衬底层对FePt薄膜结构和性能的影响

采用磁控溅射方法在自然氧化的单晶Si(100)衬底上制备了双层结构的FePt-X/Ag(X=Ag或Pt)薄膜.以20nm厚的Ag做衬底,可以制备出易磁化轴垂直基片的FePt合金薄膜;Ag在FePt薄膜中优先团聚,不利于控制FePt晶粒的长大,调整Pt的含量可以控制热处理过程中FePt薄膜的晶粒尺度;通过XRD、TEM、VSM对薄膜样品的结构、晶粒尺寸的观察和磁性检测,我们认为FePt合金薄膜有序化转变的最佳热处理温度在400℃;经过500℃热处理,薄膜软硬磁耦合较好,晶粒尺寸约为100nm,有最大的矫顽力1.04×106A/m.