TiO_2改性PVDF/PMMA复合薄膜的制备及其性能

以二氧化钛(TiO2)为填料,聚偏氟乙烯(PVDF)、聚甲基丙烯酸甲酯(PMMA)为基体,通过熔融共混制备PVDF/PMMA/TiO2复合薄膜,采用扫描电子显微镜、紫外/可见分光光度计、差示扫描量热仪和力学性能测试等方法表征了其各种性能。研究表明,PVDF与PMMA有良好的相容性,TiO2可以均匀的分散在基体中;TiO2的加入对材料的力学性能产生一定的影响,同时通过剥离实验对PVDF/PMMA/TiO2复合薄膜的粘结性能进行了表征。     

聚偏氟乙烯/聚甲基丙烯酸甲酯共混物的老化性能

对聚偏氟乙烯(PVDF)/聚甲基丙烯酸甲酯(PMMA)共混物的老化性能进行了研究,对试样进行湿热老化和紫外老化的加速老化实验,得到了拉伸强度和色差值随老化时间的变化规律。结果表明:在湿热老化过程中,拉伸强度随时间的延长先增加后减小,且PVDF与PMMA的质量比为70∶30时最大,但此时材料脆性太大;而在老化121 d后,随PM-MA含量的增加,试样的熔融指数增加;在老化152 d内,四组试样色差值ΔE<1.5,属于可接受的范围。同样两组薄膜样品在紫外光老化实验中,拉伸强度先增大后减小,且在紫外老化的1040h内,色差值ΔE<1,耐紫外效果较好。     

PVDF/PMMA/TiO_2型聚合物隔膜的制备

为提高锂离子电池聚偏氟乙烯(PVDF)基聚合物隔膜的导电性和降低PVDF基聚合物隔膜的结晶度,引入聚甲基丙烯酸甲酯(PMMA)与聚偏氟乙烯(PVDF)进行共混,掺杂无机纳米材料TiO_2,采用相转化方法制备PVDF/PMMA/TiO_2型聚合物隔膜。通过对制备的PVDF/PMMA/TiO2型多孔膜吸液率、微观形貌和电化学性能的分析研究,确定制膜的最佳工艺条件为聚合物浓度为5%,PVDF∶PMMA为72∶28,纳米TiO_2添加量为5%,非溶剂添加量为3%,水浴温度为55℃。该方案下制备的多孔膜结晶度较纯PVDF薄膜结晶度降低,吸液率达到109.76%,离子电导率为2.64mS/cm,电化学稳定窗口为4.86V,高于4.5V,能够满足锂离子电池正常工作需要。     

PVDF/PMMA共混挤出流延膜结构与性能研究

探讨了聚偏氟乙烯(PVDF)/聚甲基丙烯酸甲酯(PMMA)共混挤出流延膜的结构和性能.研究结果表明:PMMA的加入能够大大改善其微观结构,不但使结晶度降低,而且红外分析(IR)和广角x射线衍射(WXRD)证实,其中部分α晶型能明显地转变成β晶型;TGA研究表明,共混体系的稳定性比纯粹的PMMA稳定性提高,但PVDF的热稳定性只有很少降低;流变性能研究显示,PMMA含量在很宽的范围内体系扭矩变化不大,为选择加工条件提供了依据;力学性能测试显示出共混膜具有很好的力学性能.PVDF/PMMA共混挤出膜被证明是一种很有前途的薄膜材料.     

Ag对TiO2@Ag/聚偏氟乙烯复合薄膜性能的影响

采用光化学沉积法和溶液刮膜法制备不同Ag含量的TiO₂@Ag/聚偏氟乙烯(PVDF)复合薄膜,并采用电子万能材料试验机、紫外可见近红外分光光度计和XRD等对TiO₂@Ag/PVDF复合薄膜的物理性能和光催化性能进行表征和分析。研究发现:与TiO₂/PVDF复合薄膜相比,TiO₂@Ag/PVDF复合薄膜的拉伸强度明显提高,但断裂伸长降低,且复合薄膜的响应光谱范围拓宽至可见光区;TiO₂@Ag/PVDF复合薄膜的光催化降解能力随Ag负载量的增加而呈先升高后降低的趋势;同时TiO₂@Ag/PVDF复合薄膜具有优异的重复利用性和可见光区自清洁作用。综上所述,实验所制备的TiO₂@Ag/PVDF复合薄膜能够满足实际应用需要,因此其在光催化降解领域具有潜在的应用前景。      

叠层式TiO2/SnO2复合纳米薄膜制备及其光电性能研究

采用溶胶-凝胶法在不同基体表面制备了叠层式TiO2/SnO2复合纳米薄膜.用扫描电子显微镜(SEM)、X射线衍射(XRD)对复合薄膜表面形貌和晶体结构进行表征.采用紫外-可见吸收光谱法和电化学方法来研究复合薄膜光学与光电化学性能特征.结果表明,所制备的叠层式TiO2/SnO2复合纳米薄膜表面连续、均匀、致密;XRD分析表明纳米TiO2为锐钛矿型结构,SnO2为金红石型结构;紫外-可见吸收光谱测试表明叠层式TiO2/SnO2复合纳米薄膜较纯TiO2薄膜的吸收范围拓宽;稳定电位随时间变化曲线(OCP-t)结果表明,叠层式TiO2/SnO2复合纳米薄膜光照下其光电化学性能高于纯TiO2薄膜;同时,光照后叠层式TiO2/SnO2复合纳米薄膜能有效储存TiO2先生电荷,延续对不锈钢基体的光生阴极保护性能.经比较,叠加3层SnO2的TiO2/3SnO2复合纳米薄膜改善光电性能最佳.     

PVDF/PMMA/PEG型聚合物隔膜的制备

为提高锂离子电池聚偏氟乙烯(PVDF)基聚合物隔膜对电解液体系的亲和性和导电性,引入聚甲基丙烯酸甲酯(PMMA)与聚偏氟乙烯(PVDF)进行共混,并添加有机增塑剂聚乙二醇PEG-400对PVDF基聚合物隔膜进行改性研究。采用先干法后湿法的相转化方法制备PVDF/PMMA/PEG型聚合物隔膜。通过对制备的聚合物隔膜的孔隙率、吸液率、微观形貌和电化学性能的分析研究,确定制膜的最佳工艺条件为聚合物占溶剂质量百分比为8%,PVDF∶PMMA=7∶3,增塑剂含量为30%,非溶剂含量为3%,反应温度为45℃,在此最佳工艺条件下制备的PVDF/PMMA/PEG隔膜的离子电导率可达2.848 m S/cm,对电解液体系的亲和性和导电性得到显著提高。     

亲水性PVDF/TiO2复合薄膜的制备及光催化性能

本实验采用平板刮膜法制备PVDF/TiO2复合薄膜,再通过超声清洗致孔剂并改变其亲水性,然后对样品薄膜的微观形貌、力学性能、光催化性能等进行研究与分析.研究发现:PVDF/TiO2复合薄膜的拉伸强度和光催化降解能力均随着TiO2的加入呈现先增后减的趋势,在TiO2添加量为10％时,其复合薄膜的拉伸强度达到最大值,光催化降解能力最优,并且样品薄膜的光催化降解符合准一级动力学方程.随着超声时间的延长,样品薄膜的亲水性变差,但其仍为亲水性薄膜,光催化降解率先增后减,且当超声时间为3h时,光催化降解率达到最大值.     

AgNWs-TPU/PVDF柔性薄膜电容传感器的制备和性能

用醇还原法制备长径比约为800的银纳米线(AgNWs)并分散成网状结构,用溶液流延法使用聚偏氟乙烯(PVDF)和不同质量分数的聚氨酯(TPU)制备柔韧性PVDF/TPU复合薄膜,然后将AgNWs网固定在PVDF/TPU柔性薄膜的表面作为电容的极板制备出柔性薄膜电容式传感器.用扫描电子显微镜(SEM)、紫外-可见光谱和X...     

PMMA／TiO2-SiO2高分子杂化材料的制备与表征

用溶胶凝胶法和共混法相结合的方法制备了PMMA/TiO2-SiO2高分子杂化材料。并用傅里叶红外光谱(FT-IR)、原子力显微镜(AFM)和透射电镜(TEM)等测试方法对所得复合微粒进行了表征。结果表明,TiO2-SiO2复合粒子呈核-壳结构,具有Ti-O-Si网络;该核壳结构可均匀地分散在聚甲基丙烯酸甲酯中,形成PMMA/TiO2-SiO2高分子杂化材料。与纯的聚合物材料相比,PMMA/TiO2-SiO2高分子杂化材料有较好的热稳定性、优良的紫外屏蔽和可见光透过特性。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.