Thermoelectric properties of Mo-doped bulk In2O3 and prediction of its maximum ZT

In a search for new thermoelectric materials, indium oxide (In₂O₃) was selected as a candidate for high-temperature thermoelectric oxide materials due to its intrinsically low thermal conductivity (<2 W/mK) and ZT values around 0.05. However, low electrical conductivity is a factor limiting the thermoelectric performance of this oxide, and was addressed in this study by Mo doping. It was found that Mo is soluble in In₂O₃ but forms secondary phases at a fraction near x = 0.06 and higher. Mo was found to be unsuitable for heavy n-type doping necessary to improve the thermoelectric performance of the oxide to the desired level (ZT = 1). However, the experimental data enabled us to analyze the electrical conductivity behavior and the Seebeck coefficient of doped In₂O₃ with different carrier concentrations, predicting a theoretically achievable maximum power factor value of 1.77 × 10^?3 W/mK² at an optimum carrier concentration. This estimation predicts the highest ZT value of 0.75 at 1073 K, assuming the lattice thermal conductivity value remaining at an amorphous level.     

Rapid fabrication of Se-modified skutterudites obtained via self-propagating high-temperature synthesis and pulse plasma sintering route

Selenium is an effective dopant in skutterudite-based thermoelectric materials. It strongly influences thermal transport properties due to effective phonon scattering. This study proposes a short-term fabrication route to Se-modified CoSb₃-based materials. Alloy synthesis was conducted via self-propagating high-temperature synthesis. Subsequently, pulse plasma sintering consolidated all materials. As a result, thermoelectric materials with high electrical properties homogeneity were obtained. Seebeck potential mapping showed the measured deviation of the Seebeck coefficient for all fabricated samples was between 5 and 7%. A very low thermal conductivity (1.59 W m^?1 K^?1, at 573 K) was achieved for the highest doped sample, and one of the lowest reported results obtained for bulk skutterudite-based thermoelectric materials ever. This resulted in a low lattice thermal conductivity (1.51 W m^?1 K^?1, at 573 K). This led to the highest ZT (0.27 at 623 K) for the highest doped sample.     

Effect of excess Ge and Te on thermoelectric performance of GeTe

GeTe is a medium-temperature thermoelectric material with excellent performance. The thermoelectric performance of GeTe is affected by the carrier concentration generated by Ge vacancy. Therefore, it is of important to study the effect of excess Ge or Te on the thermoelectric performance of GeTe. In this paper, Ge_xTe_y materials (x:y = 1:1.08, 1:1.06, 1:1.04, 1:1, 1.05:1, 1.075:1, and 1.1:1) were fabricated by high-pressure sintering (HPS) and spark plasma sintering (SPS), respectively, to study the effects of different Ge/Te atomic ratios and preparation process on the thermoelectric properties of polycrystalline GeTe. The composition and microstructure were investigated by an X-ray diffraction method (XRD) and field-emission scanning electron microscope (FESEM). The thermoelectric performance was tested from 303 to 703 K. The measurement results show that the Seebeck coefficient of Ge_xTe_y increases and the conductivity decreases with the decreasing in Te content or the increasing in Ge content. Ge₁Te₁ exhibits the highest power factor because its Seebeck coefficient and conductivity are at an average level. Owing to the presence of pure Ge and the decrease of Ge vacancy, the lattice thermal conductivities of samples with excess Ge are higher than that of Ge₁Te₁. Ge₁Te₁ sintered by HPS has the highest ZT_max value, reaching 1.37 at 723 K.     

Enhanced thermoelectric properties of Cu2Se via Sb doping: An experimental and computational study

In this study, Cu₂Se_1?xSb_x (x = 0.000, 0.005, 0.010, and 0.015) thermoelectric materials were synthesised using a solid-state reaction technique. A first-principles calculation indicated that the formation energy of the substitution of antimony (Sb) on the Se site is negative and more stable than those of copper (Cu) sites. Sb doping enhanced the lamellar orientation, decreased the grain size, and created an acceptor impurity level. The electrical resistivity and Seebeck coefficient decreased with increasing Sb doping. A minimum reduction in the thermal conductivity by approximately three times that of the undoped sample was obtained at x = 0.005 with a value of 0.40 W/m K at 523 K. The maximum figure of merit (ZT) was obtained at x = 0.005 with a value of 0.47 at 523 K. These findings indicate that substituting Sb into Se sites is an efficient approach for improving copper selenide (Cu₂Se) thermoelectric materials.     

Fabrication and electrical properties of Bi2-xSbxTe3 ternary nanopillars array films

Highly oriented Bi_2-xSb_xTe₃ (x?=?0, 0.7, 1.1, 1.5, 2) ternary nanocrystalline films were fabricated using vacuum thermal evaporation method. Microstructures and morphologies indicate that Bi_2-xSb_xTe₃ films have pure rhombohedral phase with well-ordered nanopillars array. Bi, Sb and Te atoms uniformly distributed throughtout films with no precipitation. Electrical conductivity of Bi_2-xSb_xTe₃ films transforms from n-type to p-type when x?>?1.1. Metal-insulator transition was observed due to the incorporation of Sb in Bi₂Te₃. Bi_2-xSb_xTe₃ film with x?=?1.5 exhibits optimized electrical properties with maximum electrical conductivity σ of 2.95?×?10⁵ S?m^?1 at T?=?300?K, which is approximately ten times higher than that of the undoped Bi₂Te₃ film, and three times higher than previous report for Bi_0.5Sb_1.5Te₃ films and bulk materials. The maximum power factor PF of Bi_0.5Sb_1.5Te₃ nanopillars array film is about 3.83?μW?cm^?1 K^?2 at T?=?475?K. Highly oriented (Bi,Sb)₂Te₃ nanocrystalline films with tuned electronic transport properties have potentials in thermoelectric devices.     

Enhanced thermoelectric performance of p-type sintered BiSbTe-based composites with AgSbTe2 addition

Bismuth telluride-based materials have been widely used in the field of thermoelectric cooling near room temperature. However, the material utilization and device conversion efficiency were limited by the low thermoelectric performance and poor mechanical properties of commercial zone-melting materials. With an aim to optimize the comprehensive properties, we prepared the composite samples of Bi_0.48Sb_1.52Te₃ (BST)-x wt% AgSbTe₂ (x = 0, 0.05, 0.1, 0.2) via the hot pressing method. It was found that the AgSbTe₂ addition can effectively increase the carrier concentration and improve the power factor to 46 μW cm^?1 K^?2 at 300 K. Due to the introduction of dislocations, stress and Te inhomogeneities, the lattice thermal conductivity of the composite was significantly reduced to 0.69 W m^?1 K^?1 at 325 K. As a result, a maximum ZT of 1.15 at 325 K is obtained for the x = 0.1 sample. Interestingly, BST-0.1 wt% AgSbTe₂ exhibits roughly isotropic thermoelectric performance perpendicular to and parallel to the pressing direction. Our study suggests that the BST-AgSbTe₂ composite is very promising for the application of thermoelectric refrigeration near room temperature.     

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi₂Te₃ topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi₂Te₃. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement.     

High thermoelectric performance of (Bi1-xPrx)2(Te0.9Se0.1)3 alloys prepared by high-pressure sintering method

In this article, n-type (Bi_1-xPr_x)₂(Te_0.9Se_0.1)₃ (x = 0, .002, .004, .008) alloys were fabricated by high-pressure sintering (HPS) method together with annealing. The effect of high pressure and Pr contents on the microstructure and thermoelectric performance of samples were explored in detail. The results show that the HPS samples are composed of nanoparticles. Pr doping has significant impacts on the electrical and thermal transport properties of the Bi₂Te_2.7Se_0.3 alloys. The HPS sample with x = .004 shows the maximum ZT value of .31 at 473 K, which is enhanced by 41% to compare with the Pr-free sample. Annealing can improve the thermoelectric properties by increasing the electrical transport properties and decreasing the thermal conductivity simultaneously. As a result, the highest ZT value of 1.06 is achieved for the annealed sample with x = .004 at 373 K, which is beneficial to the thermoelectric power generation.     

The influence of CNTs on the thermoelectric properties of a CNT/Bi2Te3 composite

CNT/Bi₂Te₃ composites were prepared from composite powders in which CNTs were implanted in the Bi₂Te₃ matrix powders by a novel chemical route. It was found that the fabricated composite had a microstructure of a homogeneous dispersion of CNTs in the Bi₂Te₃ matrix due to interfacial bonding agents of oxygen atoms attaching to the surface of CNTs. The dimensionless figure of merit (ZT) of the composite shows significantly increased values compared to those of pure binary Bi₂Te₃ in the temperature range of 298–498 K and a maximum ZT of 0.85 was obtained at 473 K. It is considered that the improved thermoelectric performance of the composite mainly originated from thermal conductivity that was reduced by active phonon-scattering at the CNT/Bi₂Te₃ interface.     

Rapid preparation of high-performance S0.4Co4Sb11.2Te0.8 skutterudites with a highly porous structure

In this study, S_0.4Co₄Sb_11.2Te_0.8 skutterudites with a highly porous structure inside grains are prepared by a one-step hot-pressing (OS-HP) method. The effect of the pressure relief treatment at the heating stage on the micro-morphology and thermoelectric properties of materials is investigated. When the temperature corresponding to the pressure relief treatment is less than 723 K, the grain size dramatically increases from ～1 to ～50 μm, and a large number of pores are distributed inside these large grains. Compared with those samples prepared by the conventional method, the thermal conductivity of samples prepared by the pressure relief treatment is significantly reduced due to the high porosity. The ZT values of samples prepared by the pressure relief treatment are greater than 1.6 at 825 K. This newly developed OS-HP method can be employed for the rapid fabrication of highly porous structured skutterudites with low-melting-point compositions as well as of other material systems.     

Synthesis of n-type Bi2Te1-xSex compounds through oxide reduction process and related thermoelectric properties

We propose a new process for the fabrication of n-type Bi₂Te_3-xSe_x (x = 0, 0.25, 0.4, 0.7) compounds. The compounds could be synthesized successfully using only oxide powders as the starting materials via the mechanical milling, oxidation, reduction, and spark plasma sintering processes. The controllability of the Se content could be ascertained by structural, electrical, and thermal characterizations, and the highest thermoelectric figure of merit (ZT) of 0.84 was achieved in Bi₂Te_2.6Se_0.4 compound at 423 K without any intentional doping. This process provides a new route to fabricate n-type Bi₂Te_3-xSe_x compounds with competitive ZTs using all oxide starting materials.     

High-performance n-type CoSb3-based thermoelectric material with vortex and strip-shaped grain structures

A high-performance n-type filled skutterudite with vortex and strip-shaped grain structures was fabricated by a rapid quenching and annealing combined with spark plasma sintering. The formation of these specific grain structures originated mainly from the long-term annealing and rapid high-pressure sintering of layered and porous grains in quenched sample. This specific vortex and strip-shaped grain structure can ensure a carrier transport channel while maintaining a high Seebeck coefficient due to an enhanced carrier energy filtering effect induced by more nanoscale dislocations. In addition, this specific structure can strongly scatter phonons, providing a low lattice thermal conductivity. As a result, a high average figure of merit ZT of 1.4 in the range of 650–850 K was obtained for Ba_0.3In_0.3Co₄Sb₁₂, which is a record-high value among single-phase double-filled skutterudites. This study provides a strategy to fabricate high-performance thermoelectric materials with specific structures.     

Carrier concentration optimization for thermoelectric performance enhancement in n-type Bi2O2Se

The Bi₂O₂Se-based compounds with an intrinsically low thermal conductivity and relatively high Seebeck coefficient are good candidates for thermoelectric application. However, the low electrical conductivity resulted from carrier concentration of only 10¹⁵?cm^?3 for pristine material, which is too low for optimized thermoelectrics. As a result, the carrier concentration optimization of Bi₂O₂Se is important and useful to achieve higher power factor. In this work, the effect of Ge-doping at the Bi site has been investigated systematically, with expectations of carrier concentration optimization. It is found that Ge doping is an efficient method to increase carrier concentration. Due to the largely increased carrier concentration via Ge doping, the room temperature electrical conductivity rises rapidly from 0.03?S/cm in pristine sample to 133?S/cm in x?=?0.08 sample. Combined with the intrinsically low thermal conductivity, a maximum ZT value of 0.30 has been achieved at 823?K for Bi_1.92Ge_0.08O₂Se, which is the highest ZT value for Bi₂O₂Se-based thermoelectric materials.     

Enhanced Thermoelectric Properties of Bi2O2Se Ceramics by Bi Deficiencies

Polycrystalline Bi_2?xO₂Se ceramics were synthesized by spark plasma sintering process. Their thermoelectric properties were evaluated from 300 to 773 K. All the samples are layered structure with a tetragonal phase. The introduction of Bi deficiencies will cause the orientation alignment and change of effective mass. As a result, a significant enhancement of thermoelectric performance was achieved. The maximum of Seebeck coefficient is ?568.8 μV/K for Bi_1.9O₂Se at 773 K, much larger than ?445.6 μV/K for pristine Bi₂O₂Se. Featured with very low thermal conductivity [~0.6 W·(m·K)^?1] and an optimized electrical conductivity, ZT at 773 K is significantly increased from 0.05 for pristine Bi₂O₂Se to 0.12 for Bi_1.9O₂Se by introducing Bi deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.     

Synthesis and thermoelectric performance of Li-doped NiO ceramics

Ni_1?xLi_xO (x = 0, 0.03, 0.06, 0.09) powders were prepared by sol–gel method combined with sintering procedure using Ni(CH₃COO)₂·4H₂O and citric acid as the raw materials and alcohol as solvent. The crystal structures of the samples were investigated by X-ray diffraction and Raman spectroscopy. The thermoelectric properties, such as the electrical conductivity, the Seebeck coefficient and the thermal conductivity were measured. The results showed that all the samples are p-type semiconductors. The electrical conductivity increases with the increase of the temperature, which indicates that the substitution of Li⁺ for Ni²⁺ can increase the concentrations and mobility of the carriers. The thermal conductivity decreases remarkably with the increase of the Li doping content, which indicates that Li doping can enhance the scattering of phonon. However, the Seebeck coefficient will decline with the increase of the Li doping content. As results of the increase of electrical conductivity and reduction of thermal conductivity, Li doping can increase the figure of merit (ZT) of NiO, the ZT value reach 0.049 at 770 K for Ni_1?xLi_xO with x = 0.06.     

A thermoelectric generator comprising selenium-doped bismuth telluride on flexible carbon cloth with n-type thermoelectric properties

Carbon cloth was used as a flexible substrate for bismuth telluride (Bi₂Te₃) particles to provide flexibility and improve the overall thermoelectric performance. Bi₂Te₃ on carbon cloth (Bi₂Te₃/CC) was synthesized via a hydrothermal reaction with various reaction times. After over 12 h, the Bi₂Te₃ particles showed a clear hexagonal shape and were evenly adhered to the carbon cloth. Selenium (Se) atoms were doped into the Bi₂Te₃ structure to improve its thermoelectric performance. The electrical conductivity increased with increasing Se-dopant content until 40% Se was added. Moreover, the maximum power factor was 1300 μW/mK² at 473 K for the 30% Se-doped sample. The carbon cloth substrate maintained its electrical resistivity and flexibility after 2000 bending cycles. A flexible thermoelectric generator (TEG) fabricated using the five pairs of 30% Se-doped sample showed an open-circuit voltage of 17.4 mV and maximum power output of 850 nW at temperature difference ΔT = 30 K. This work offers a promising approach for providing flexibility and improving the thermoelectric performance of inorganic thermoelectric materials for wearable device applications using flexible carbon cloth substrate for low temperature range application.     

S0.05Co4Sb11.6Te0.4 skutterudite introduced into graphene at high pressure and high temperature and its thermoelectric performance enhancement

A series of graphene-S_0.05Co₄Sb_11.6Te_0.4 (C_x-S_0.05Co₄Sb_11.6Te_0.4) composite polycrystalline skutterudite materials with graphene stoichiometric ratio of x = 0, 0.05, 0.10, 0.20 have been successfully prepared by high pressure and high temperature (HPHT) technology. Graphene is a two-dimensional material with large carrier mobility and large specific surface area. Through microscopic observation, it is found that graphene is attached to the grains in the sample. At the same time, with the increase of graphene content, grain growth is inhibited. Graphene addition reduces the thermal conductivity of skutterudite by increasing grain boundaries and achieves the purpose of optimizing its thermoelectric properties. At the same time, there are numerous lattice defects and distortions introduced in skutterudite synthesized by HPHT technology. Finally, the samples were synthesized under the conditions of 1.5 GPa and 900 K. The lattice thermal conductivity of the graphene composite sample C_x-S_0.05Co₄Sb_11.6Te_0.4 with x = 0.10 reaches a minimum of 0.99 at 773 K, and the zT value of this sample is 1.25 at 773 K, which is greater than pure S_0.05Co₄Sb_11.6Te_0.4, its zT value is 1.00 at 773 K. Compared with the method of synthesizing skutterudite under normal pressure, the HPHT technology can dramatically reduce the reaction time from several days to less than 30 min, while forming a high-pressure airtight reaction environment, which can effectively prevent the volatilization and oxidation of samples during the reaction process, thus providing a convenient method for synthesizing thermoelectric materials quickly and efficiently.     

Effect of Ag+ doping and Ag addition on the thermoelectric properties of KSr2Nb5O15

The electron and phonon thermal transport behavior of Ag ⁺ doped KSr₂Nb₅O₁₅ were discussed by using the first-principles calculations. The band gap was reduced after Ag⁺ doping, and the electrons near the Fermi level had stronger transition capability, which effectively increased the carrier concentration and electrical conductivity and reduced the thermal conductivity, thereby improving the ZT of the doped KSr₂Nb₅O₁₅ from 0.6298 to 0.7214 (1200 K) under ideal conditions. In addition, the solid-state reaction method was used to prepare Ag nanoparticle added KSr₂Nb₅O₁₅ samples, and their thermoelectric performance was tested. The experimental results and the calculated results showed a good consistent trend in which Ag improved the thermoelectric properties of KSr₂Nb₅O₁₅. When the amount of addition of nanosized Ag was 20 wt%, the power factor and ZT of the material were the highest at 1073 K, which were 0.228 mW/(K²·m) and 0.1090, respectively. This research shows how to improve the thermoelectric performance of KSr₂Nb₅O₁₅ ceramics and broaden their temperature range for application.     

Enhancements of thermoelectric performance in n-type Bi2Te3-based nanocomposites through incorporating 2D Mxenes

Bi₂Te_2.7Se_0.3 compound has been considered as an efficient n-type room-temperature thermoelectric (TE) material. However, the large-scale applications for low-quality energy harvesting were limited due to its low energy-conversion efficiency. We demonstrate that TE performance of Bi₂Te_2.7Se_0.3 system is optimized by 2D Ti₃C₂T_x additive. Here, a 43% reduction of electrical resistivity is obtained for the nanocomposites at 380 K, originating from the increased carrier concentration. Consequently, the g = 0.1 sample shows a maximum power factor of 1.49 Wmm^?1K^?2. Meanwhile, the lattice thermal conductivity for nanocomposite samples is reduced from 0.77 to 0.41 Wm^?1K^?1 at 380 K, due to the enhanced phonon scattering induced by the interfaces between Ti₃C₂T_x nanosheets and Bi₂Te_2.7Se_0.3 matrix. Therefore, a peak ZT of 0.68 is achieved at 380 K for Bi₂Te_2.7Se_0.3/0.1 wt% Ti₃C₂T_x, which is enhanced by 48% compared with pristine sample. This work provides a new route for optimizing TE performance of Bi₂Te_2.7Se_0.3 materials.     

Controllable preparation of porous ZrB2–SiC ceramics via using KCl space holders

In this work, a novel and facile technique based on using KCl as space holders, along with partial sintering (at 1900 °C for 30 min), was explored to prepare porous ZrB₂–SiC ceramics with controllable pore structure, tunable compressive strength and thermal conductivity. The as-prepared porous ZrB₂–SiC samples possess high porosity of 45–67%, low average pore size of 3–7 μm, high compressive strength of 32–106 MPa, and low room temperature thermal conductivity of 13–34 W m⁻¹ K⁻¹. The porosity, pore structure, compressive strength and thermal conductivity of porous ZrB₂–SiC ceramics can be tuned simply by changing KCl content and its particle size. The effect of porosity and pore structure on the thermal conductivity of as-prepared porous ZrB₂–SiC ceramics was examined and found to be consistent with the classical model for porous materials. The poring mechanism of porous ZrB₂–SiC samples via adding pore-forming agent combined with partial sintering was also preliminary illustrated.