Role of structural modification on the electrical properties of poly(ethylene terephthalate) irradiated with 90‐MeV carbon ion beam

Thin films of poly(ethylene terephthalate) (PET) having a thickness of 100 μm were exposed to different ion fluence of swift heavy ions of carbon in the range of 5 × 10¹¹ – 5 × 10¹³ ions/cm². The effect of ion beam on structural and electrical modification has been studied by UV/vis, FTIR, X‐ray diffraction (XRD), Differential Scanning Calorimetery (DSC), and AC electrical measurement techniques. On irradiation, a shift in absorption wavelength toward the red end of spectrum with increase of ion fluence was observed. The intensity of crystalline IR bands and main diffraction peak in XRD pattern were found to decrease with increase in ion fluence. It indicates the loss of crystallinity induced by ion‐beam irradiation. The crystallite size was found to increase on irradiation. The melting temperature (T_m) of PET films increased at a low ion dose (5.0 × 10¹² ions/cm²), while it decreased at higher ion fluence (50.0 × 10¹² ions/cm²). The dielectric constant (ε′) of PET films was increased with increase of ion fluence. The modifications brought about in the dielectric constant are correlated with chemical and molecular structural changes occurring on irradiation. POLYM. ENG. SCI., 2008. © 2008 Society of Plastics Engineers.     

Effect of Au ion beam on structural,surface, optical and electrical properties of ZnO thin films prepared by RF sputtering

In the present work, ZnO thin films were irradiated with 700?keV Au⁺ ions at different fluence (1?× 10¹³, 1?× 10¹⁴, 2?× 10¹⁴ and 5?× 10¹⁴ ions/cm²). The structural, morphological, optical and electrical properties of pristine and irradiated ZnO thin films were characterized by X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FTIR), scanning electron microscope (SEM), spectroscopy ellipsometry (SE) and four point probe technique respectively. XRD results showed that the crystallite size decreased from pristine value at the fluence 1?×?10¹³ ions/cm², with further increase of ion fluence the crystallite size also increased due to which the crystallinity of thin films improved. SEM micrographs showed acicular structures appeared on the ZnO thin film surface at high fluence of 5?×?10¹⁴ ions/cm². FTIR showed absorption band splitting due to the growth of ZnO nanostructures. The optical study revealed that the optical band gap of ZnO thin films changed from 3.08?eV (pristine) to 2.94?eV at the high fluence (5?× 10¹⁴ ions/cm²). The electrical resistivity of ZnO thin film decreases with increasing ion fluence. All the results can be attributed to localized heating effect by ions irradiation of thin films and well correlated with each other.     

Structural evolution of Lu2-xCexTi2O7 pyrochlores under 400 keV Ne irradiation

Lu_2-xCe_xTi₂O₇ (LCTO) pyrochlores were irradiated by 400 keV Ne²⁺ with fluences (dose) of up to 5 × 10¹⁵ ions/cm² (1.875 dpa). The detailed damage process was investigated by combining grazing incident angle X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). Subsequent to the 2% volume swelling at a fluence of 1 × 10¹⁴ ions/cm² (0.037 dpa), the initially swollen LCTO pyrochlore formed both a disordered fluorite phase and a nanocrystalline pyrochlore phase at a fluence of 5 × 10¹⁴ ions/cm² (0.185 dpa). At higher fluences, the fluorite phase diminished as amorphous domains increased in volume when the dose reached a fluence of 1 × 10¹⁵ ions/cm² (0.371 dpa), while the nanocrystalline pyrochlore phase persisted. At the highest fluence of 5 × 10¹⁵ ions/cm² (1.854 dpa), the amorphous fraction decreased, meanwhile the degree of crystallinity of nanocrystalline pyrochlore phase was enhanced, as evidenced by the increased intensity of superlattice diffraction maxima. The phase transformation and recrystallization can be explained by the release of strain in irradiation-induced swollen pyrochlore crystallites. The evolution of the damage process is mainly driven by the differences in the Gibb's free energies of fluorite phase as compared with the pyrochlore phase as a function of grain size. We have demonstrated that ion beam techniques can be used to manipulate the phase stability and crystallite size of pyrochlore. These results provide the basis for tailoring the mechanical strength and response of pyrochlores to extreme radiation environments.     

Fabrication of highly efficient TiO2/Ag/TiO2 multilayer transparent conducting electrode with N ion implantation for optoelectronic applications

Fabrication of highly conductive and transparent TiO₂/Ag/TiO₂ (referred hereafter as TAT) multilayer films with nitrogen implantation is reported. In the present work, TAT films were fabricated with a total thickness of 100 nm by sputtering on glass substrates at room temperature. The as-deposited films were implanted with 40 keV N ions for different fluences (1×10¹⁴, 5×10¹⁴, 1×10¹⁵, 5×10¹⁵ and 1×10¹⁶ ions/cm²). The objective of this study was to investigate the effect of N⁺ implantation on the optical and electrical properties of TAT multilayer films. X-ray diffraction of TAT films shows an amorphous TiO₂ film with a crystalline peak assigned to Ag (111) diffraction plane. The surface morphology studied by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) revealed smooth and uniform top layer of the sandwich structure. The surface roughness of pristine film was 1.7 nm which increases to 2.34 nm on implantation for 1×10¹⁴ ions/cm² fluence. Beyond this fluence, the roughness decreases. The oxide/metal/oxide structure exhibits an average transmittance ~80% for pristine and ~70% for the implanted film at fluence of 1×10¹⁶ ions/cm² in the visible region. The electrical resistivity of the pristine sample was obtained as 2.04×10⁻⁴ Ω cm which is minimized to 9.62×10⁻⁵ Ω cm at highest fluence. Sheet resistance of TAT films decreased from 20.4 to 9.62 Ω/□ with an increase in fluence. Electrical and optical parameters such as carrier concentration, carrier mobility, absorption coefficient, band gap, refractive index and extinction coefficient have been calculated for the pristine and implanted films to assess the performance of films. The TAT multilayer film with fluence of 1×10¹⁶ ions/cm² showed maximum Haacke figure of merit (FOM) of 5.7×10⁻³ Ω⁻¹. X-ray photoelectron spectroscopy (XPS) analysis of N 1s and Ti 2p spectra revealed that substitutional implantation of nitrogen into the TiO₂ lattice added new electronic states just above the valence band which is responsible for the narrowing of band gap resulting in the enhancement in electrical conductivity. This study reports that fabrication of multilayer transparent conducting electrode with nitrogen implantation that exhibits superior electrical and optical properties and hence can be an alternative to indium tin oxide (ITO) for futuristic TCE applications in optoelectronic devices.     

Oxygen vacancy enhanced room temperature ferromagnetism in Ar+ ion irradiated WO3 films

Room-temperature ferromagnetism in WO₃ films was enhanced by 130 keV Ar⁺ ion irradiation. The X-ray diffraction (XRD) and Raman measurements not only confirmed the monoclinic phase of the irradiated WO₃ films, but also showed that oxygen vacancy (V_O) defects were formed. The analysis of photoluminescence spectra strongly reconfirmed the presence of oxygen vacancy. X-ray photoelectron spectroscopy (XPS) measurements revealed that the contents of V_O and induced W⁵⁺ ions increase with increasing irradiation fluence and rich W⁵⁺-V_O defect complexes in the irradiated WO₃ films were formed. Further, the magnetic measurements exhibited a 2-fold enhancement in the saturation magnetization at the largest fluence of 3 × 10¹⁶ ions/cm². At lower irradiation fluence, a bound magnetic polaron model was proposed to reveal the ferromagnetic exchange coupling resulting from overlapping of V_O⁺ and V_O⁺⁺ defect states, and 5d¹ states of W⁵⁺. At high irradiation fluence, the carrier concentration reaches 1.02 × 10²⁰/cm³ and carrier-mediated exchange interactions result in the film's ferromagnetism.     

The effect of gallium implantation on the optical properties of diamond

Gallium focused-ion beam milling is a commonly used technique for sculpting diamond at the nano and micro scale. However even at fluences insufficient to cause sputtering, implanted gallium causes modification of the optical properties of the diamond substrate. We implanted 30 keV gallium ions at fluences from 1 × 10¹³ to 5 × 10¹⁴ Ga/cm² and studied the effect on the optical properties via spectroscopic ellipsometry (SE), from 0.6 to 6.5 eV, obtaining the changes in refractive index and extinction coefficient in the implanted layer as a function of operating wavelength. Here, we report the first observation of decreased refractive index for a wide spectral range in low fluence implanted diamond. In addition, we observe non-monotonic response of the refractive index with fluence, which is in disagreement with proton studies, but accords with other heavy-ion implantation reports. Such discrepancies suggest that there are different mechanisms for refractive index modification for different species and that resulting optical properties are not solely a function of damage. Further comparisons with the white light reflectance and near infra-red transmittance measurements support the SE data.     

Gradual modification of the YSZ structures by Au ion implantation and high-energy Si ion irradiation

Gold nanoparticles (Au-NPs) were created in crystalline yttria-stabilized zirconia (YSZ). (100)-, (110)- and (111)-oriented YSZ samples were implanted by 1 MeV Au⁺ ions at room temperature and fluences ranging from 1.5 × 10¹⁶ cm⁻² to 7.5 × 10¹⁶ cm⁻². The prepared Au: YSZ structures were annealed at 1100 °C for 1 h on air to support the Au-NPs coalescence and YSZ structure recovery. Subsequent irradiation with the 10 MeV Si³⁺ ions with a fluence of 5.0 × 10¹⁴ cm⁻² was performed to enable gradual modification of Au-NPs. Au-depth profiles and YSZ structure modification in the produced samples were analysed via Rutherford backscattering spectrometry in channelling mode (RBS-C) and X-ray diffraction (XRD). RBS-C showed the gold distributed in the region of about 50–300 nm below the YSZ surface. The disorder was accumulated in the region with Au-NPs and the concentration of the disorder increases as a function of ion implantation fluence. The Zr-disorder was partially decreased after the annealing, while the subsequent Si-ion irradiation increased Zr-disorder again, however, the disorder does not reach values before the annealing. XRD measurement evidenced elastic deformation of the YSZ host lattice in the Au-implanted samples. Optical absorbance showed the appearance of the new absorption band at 550 nm for the Au-ion fluences above 5.0 × 10¹⁶ cm⁻² ascribed to the Au-NPs formation. After the annealing, the absorption band is shifted to the wavelength of 580 nm which could be connected to the proceeding clustering of Au. The maximum absorption peak intensity increases which is connected to the increasing amount of the Au-NPs. Transmission electron microscopy (TEM) with Energy dispersive spectroscopy (EDS) confirmed the presence of Au-NPs in the implanted layer after the annealing. The subsequent Si-ion irradiation did not change the Au-NP shape which remained spherical with a slight size increase.     

Atomic force microscopy images of ion-implanted 6FDA-pMDA polyimide films

The surface structure and morphology of ion-beam irradiated 6FDA-pMDA films were investigated using atomic force microscopy (AFM). A beam of 140 keV N⁺ ions with a low current density was used in this work. Three irradiation fluences (2 × 10¹⁴/cm², 1 × 10¹⁵/cm², and 5 × 10¹⁵/cm²) were chosen to represent three different regimes of ion-beam influence on material properties based upon previous diffusion and gas permeation results of implanted polyimide films. Detailed roughness and bearing analyses of the AFM images indicate that freestanding polyimide films have deep surface valleys which can extend to a depth of several micrometers. Ion-beam irradiation, even at a small dose, alters the microstructure of the surface layer and forms a modified layer which eliminates the initial deep valleys. The AFM analysis shows that small fluence irradiation induced microvoids in the surface layer of the polymer, and high fluence irradiation resulted in a large number of small-size microvoids in the surface. All of these results agree well with the ion-beam irradiation effects on iodine diffusion and gas permeation properties of the polyimides. A ripple topographical structure with a wavelength of 25 μm and an amplitude of 2 nm was also observed for irradiated samples. © 1997 John Wiley & Sons, Inc. J Appl Polym Sci 66: 459–469, 1997     

Increase the current density and reduce the defects of ZnO by modification of the band gap edges with Cu ions implantation for efficient,flexible dye-sensitized solar cells (FDSSCs)

Flexible dye-sensitized solar cells (FDSSCs) have good potential in future photovoltaic technology. The spin coating method deposited the ZnO films on indium-tin-oxide-coated polyethylene terephthalate (ITO-PET) flexible plastic substrates. These films are implanted with Cu-ions with 1 × 10¹³ ions/cm², 1 × 10¹⁴ ions/cm², and 1 × 10¹⁵ ions/cm². All the films have a hexagonal structure. The film irradiated with 1 × 10¹⁴ ions/cm² showed high crystallinity and crystallite size. Important optical properties like bandgap energy (E_g), band edges, refractive index, extinction coefficient, and dielectric constants are measured by UV–Vis spectroscopy. Bandgap energy decreases, and the refractive index increases at the fluence of Cu ions. The maximum decrease in E_g is observed at the 1 × 10¹⁴ ions/cm² dose. Photoluminescence spectra suggest that defects-related emission peaks are decreased at 1 × 10¹⁴ ions/cm² Cu ions fluency. J-V measurements have significantly improved photovoltaic performance compared to pristine ZnO-based solar cells. The highest efficiency (2.30%) is observed at a 1 × 10¹⁴ ions/cm² dose. The efficiency increase is related to improving the charge transfer ratio and shifting the fermi level toward the conduction band.     

High energy (150 MeV) Fe11+ ion beam induced modifications of physico-chemical and photoluminescence properties of high-k dielectric nanocrystalline zirconium oxide thin films

This work presents the influence of dominated electronic energy loss over nuclear energy loss induced by swift heavy ion (SHI) irradiation on the physico-chemical, optical and other properties of RF grown zirconium oxide (ZrO₂) thin films. For this purpose, thin films of ZrO₂ grown on glass substrate were irradiated by 150 MeV Fe¹¹⁺ ions with a range of fluence from 2E12 to 5E13 ions/cm² to understand the mechanism of induced modifications and defects generation. The XRD results confirmed that the virgin and irradiated ZrO₂ thin films were crystalline in nature with monoclinic and tetragonal structure. The crystallite size varied from 19.93 nm to 46.43 nm with varying ion fluence. Strain, dislocation density and stacking fault were used to investigate the changes in structural parameters. Tauc's plot method was employed for the quantitative evaluation of optical energy band gap (E_g) that exist in the range of 4.45–4.62 eV. The transmittance (%) of the virgin and Fe¹¹⁺ ions irradiated samples was determined in the range of 35.69–66.09% using UV–Vis. spectroscopy. Further, the refractive index was determined using different methods significantly depends on the optical band gap. The broad PL emission peaks were obtained at 375 nm and 440 nm with the excitation wavelength (λ_ex.) of 300 nm. The variation in PL intensity with increasing ion fluence was attributed to the creation or annihilation of primary or complex defects. FTIR spectroscopy was employed for the analysis of chemical modifications in vibrational bonds of samples and the band obtained 660 cm⁻¹was assigned to the asymmetrically coupled Zr–O–Zr stretching which presents the strong vibration in samples. The band intensity increased up to the fluence 5E12 ions/cm² and decreased at a higher fluence of 1E13 ions/cm². Rutherford backscattering spectroscopy technique was used to determine the thickness (165 nm) of the samples.     

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar⁺ ions over a large fluence range up to 2 × 10¹⁶ cm^− 2. Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp²-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 × 10¹⁵ cm^− 2. This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment.     

Atomic order-disorder engineering in the La2Zr2O7 pyrochlore under low energy ion irradiation

Cation and anion disordering affect the structural and electronic properties of the isometric A₂B₂O₇ pyrochlore materials. Here, we report a study on the structural response of La₂Zr₂O₇ at two different temperatures (300 K and ~88 K) as a function of ion fluence (1 × 10¹³, 5 × 10¹³, and 1 × 10¹⁴ ions/cm²). The effect of ion fluence and irradiation temperature on the structural properties have been investigated using the grazing angle x-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy. GIXRD results confirmed that the weakening/broadening of the diffraction peaks and lattice volume expansion increases monotonically as a function of ion fluence at both the temperatures and are more pronounced at ~88 K. The cation and anion disordering appear to be ion fluence and irradiation temperature-dependent. Raman spectroscopy shows that the atomic disordering is more pronounced with enhanced ion fluence and revealed the involvement of the X_48f parameter in the enhancement of disordering in the system. The HRTEM analysis revealed that the deterioration in the atomic ordering (amorphization) is significantly more pronounced at ~88 K. The qualitative analysis of cation/anion disordering and structural deformation revealed that irradiation parameters play a crucial role in developing and altering the properties of the pyrochlore materials for the technological applications.     

Impact of ionizing radiation on structural,dielectric, and piezoelectric properties of Sr modified PZT

Ion irradiation effects on piezoceramic (Pb_0.94 Sr_0.04) (Zr_0.52 Ti_0.48)O₃ (PSZT) are investigated by using 4 MeV carbon (C), 9 MeV copper (Cu), and 20 MeV gold (Au) ions. The energies of incident ions are selected in order to target the same range of all incident ions in the material, while producing different amounts of vacancies. The ion irradiation is performed with fluences of 1×10¹³, 1×10¹⁴, and 1×10¹⁵ ions/cm² using Tandem Pelletron accelerator (5UDH-2). Post irradiation changes in PSZT are investigated via various structural, dielectric, and piezoelectric measurement techniques. Results divulge that the irradiation process disturbs the crystallinity along with reduction in X-ray diffraction (XRD) peak intensities owing to strain induced structural defects. A small decrease in dielectric constant is observed due to trapped charges, which screen the depolarization after irradiation. However, a significant decrease is detected in piezoelectric charge coefficients (d₃₃) and piezoelectric voltage coefficients (g₃₃) due to switching of micro domains of PSZT as a result of energy observed during irradiation process. These results indicate that ion irradiation has damaging effects on the properties of PSZT. The discussed information may be utilized to assess performance of PSZT based devices under radiation rich environments such as space.     

Phase‐dependent radiation‐resistant behavior of BaTiO3: An in situ X‐ray diffraction study

The radiation‐resistant response of BaTiO₃ in the tetragonal and rhombohedral phases on exposure to 100 MeV Ag⁷⁺ ion irradiation was investigated by in situ X‐ray diffraction (XRD) at room temperature (300 K) and low temperature (25 K), respectively. This study revealed that the BaTiO₃ in rhombohedral phase retained crystallinity up to an ion fluence of 1×10¹⁴ ions/cm², whereas tetragonal phase amorphized at much lower fluence viz. 1×10¹³ ions/cm². The in situ XRD along with Raman spectroscopy studies revealed that BaTiO₃ in rhombohedral phase is more radiation resistant than that of tetragonal phase. The density functional theory (DFT) calculations confirmed higher bond strength of rhombohedral phase as compared to tetragonal phase, which supported the experimental result of higher radiation stability of rhombohedral phase. The theoretical predictions on high‐temperature phase will be of relevance to the nuclear waste applications.     

He irradiation-induced lattice distortion and surface blistering of Gd2Zr2O7 defect-fluorite ceramics

Gd₂Zr₂O₇ ceramics with different grain sizes ranging from nanoscale to submicron scale (91, 204, and 634 nm) were irradiated at room temperature using 190 keV He ions with doses ranging from 5 × 10¹⁶ to 5 × 10¹⁷ ions/cm². We fully characterized the pre- and post-irradiation samples using grazing-incidence X-ray diffraction (GIXRD), scanning electron microscope (SEM), and atomic force microscope (AFM) as the grain size and degree of irradiation vary. The results suggested that all three Gd₂Zr₂O₇ samples demonstrate outstanding radiation tolerance to displacement damage by retaining their crystallinity after irradiation at 5 × 10¹⁷ ions/cm². which is equal to 16 displacement per atom (dpa) at peak positions. Although lattice expansion was observed at a He irradiation at 5 × 10¹⁶ ions/cm² and beyond, the lattice remained stable for the nanograin ceramic, while the degree of distortion for the sample with the largest grain size (634 nm) continuously increased. Moreover, a delayed He bubble evolution process was seen for the nanograin ceramic, which did not appear for the submicron-grained sample. Interestingly, the grain size-dependent surface blistering was also found to be a function of ion fluence. After He irradiation at 5 × 10¹⁷ ions/cm² the AFM root-mean-square(RMS) roughness variation for Gd₂Zr₂O₇ ceramics of 91, 204, and 634 nm were 4.8, 7.0, and 11.1 nm, respectively.     

Purification/annealing of graphene with 100-MeV Ag ion irradiation

Studies on interaction of graphene with radiation are important because of nanolithographic processes in graphene-based electronic devices and for space applications. Since the electronic properties of graphene are highly sensitive to the defects and number of layers in graphene sample, it is desirable to develop tools to engineer these two parameters. We report swift heavy ion (SHI) irradiation-induced annealing and purification effects in graphene films, similar to that observed in our studies on fullerenes and carbon nanotubes (CNTs). Raman studies after irradiation with 100-MeV Ag ions (fluences from 3 × 10¹⁰ to 1 × 10¹⁴ ions/cm²) show that the disorder parameter α, defined by I_D/I_G ratio, decreases at lower fluences but increases at higher fluences beyond 1 × 10¹² ions/cm². This indicates that SHI induces annealing effects at lower fluences. We also observe that the number of graphene layers is reduced at fluences higher than 1 × 10¹³ ions/cm². Using inelastic thermal spike model calculations, we estimate a radius of 2.6 nm for ion track core surrounded by a halo extending up to 11.6 nm. The transient temperature above the melting point in the track core results in damage, whereas lower temperature in the track halo is responsible for annealing. The results suggest that SHI irradiation fluence may be used as one of the tools for defect annealing and manipulation of the number of graphene layers.

PACS

60.80.x; 81.05.ue     

Novel polyimide-based electrospun carbon nanofibers prepared using ion-beam irradiation

This paper describes a novel study focused on preparing carbon nanofibers, with a narrow fiber diameter distribution, from a fluorinated polyimide using both electrospinning and ion-beam irradiation. We specifically focused on the effects of ion species and ion fluences on the electrical conductivity of the nanofiber. The nanofibers were successfully prepared in the diameter range from 340 nm to 1500 nm by varying the concentration of polyimide solution using electrospinning. The Raman spectrum of the ion-irradiated nanofiber included the two well-known D (1360 cm^?1) and G (1580 cm^?1) peaks, indicating that the nanofiber surface changed to a carbon-enriched material. The carbon nanofibers underwent a more ordered graphitic carbon structure with an increase in the ion fluence and the electrical conductivity of the nanofiber irradiated at 1 × 10¹⁶ ions/cm² of Ar⁺ was 0.18 S/cm. In addition, the electrical conductivities of the ion-irradiated nanofibers increased in the order, He⁺ < Ne⁺ < Ar⁺, which indicated that the amount of nuclear energy in the ion species had the most influence on the electrical conductivity. However, the higher electrical conductivity of the carbon nanofibers is required to realize their industrial applications. This paper is the first to address the properties of the electrical conductivity of the carbon nanfibers prepared by electrospinning and ion irradiation as a new approach.     

Ripple coarsening on ion beam-eroded surfaces

The temporal evolution of ripple pattern on Ge, Si, Al₂O₃, and SiO₂ by low-energy ion beam erosion with Xe ⁺ ions is studied. The experiments focus on the ripple dynamics in a fluence range from 1.1 × 10¹⁷ cm^-2 to 1.3 × 10¹⁹ cm^-2 at ion incidence angles of 65° and 75° and ion energies of 600 and 1,200 eV. At low fluences a short-wavelength ripple structure emerges on the surface that is superimposed and later on dominated by long wavelength structures for increasing fluences. The coarsening of short wavelength ripples depends on the material system and angle of incidence. These observations are associated with the influence of reflected primary ions and gradient-dependent sputtering. The investigations reveal that coarsening of the pattern is a universal behavior for all investigated materials, just at the earliest accessible stage of surface evolution.     

Degradation of polyimide by implantation with Ar+ ions

Polyimide (PI) samples were irradiated with 200 keV Ar⁺ ions to fluences from 5 × 10¹³−1 × 10¹⁷ cm⁻² and the concentration depth profiles of implanted Ar atoms as well as of carbon and oxygen atoms of the polymer matrix were determined using the Rutherford backscattering technique. The surface polarity, sheet resistivity, and thermoelectric power of PI samples were also determined as a function of the ion fluence and temperature. As a result of the ion irradiation, the polyimide surface layer is depleted of oxygen and enriched by carbon. The sheet resistivity exhibits a minimum at the ion fluence of 5 × 10¹⁶ cm⁻² and the temperature dependence of the sheet resistivity indicates the semiconducting character of irradiated PI and the variable range hopping mechanism of charge transport. The thermoelectric power of the PI samples irradiated to high fluences is small, of the order of μV/K, and independent of temperature. This behavior is typical for metals. The simultaneous appearance of metal and semiconducting properties is probably due to the complex structure of the PI surface layer modified by the ion irradiation. © 1997 John Wiley & Sons, Inc. J Appl Polym Sci 64: 723–728, 1997     

Kr ion irradiation study of polymer-derived SiFeOC–C–SiC nanocomposite

This study focuses on the pyrolysis and ion irradiation behaviors of polymer-derived SiFeOC–C–SiC ceramic. The pyrolyzed material is composed of SiO₂ and SiOC (amorphous), carbon (amorphous and turbostratic), and Fe₃Si and β-SiC (nanocrystalline). Irradiation was carried out at both room temperature and 600°C using 400 keV Kr ions with fluences of 4 × 10¹⁵ and 1 × 10¹⁶ ions cm⁻², respectively. The Fe₃Si and SiC nanocrystals are stable against irradiation up to 3 displacement per atom (dpa) at room temperature and up to 12 dpa at 600°C. The SiOC tetrahedrals show phase separation and minor carbothermal reduction. The high irradiation resistance and the dense, defect-free amorphous microstructure of SiFeOC–C–SiC after prolonged irradiation demonstrate its great potential for advanced nuclear reactor applications.