共查询到20条相似文献,搜索用时 0 毫秒
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Sung-Sik Hwang 《Electronics letters》2000,36(14):1173-1174
A clock synchronisation scheme based on a newly proposed dual-loop delay locked loop (DLL) is presented. The proposed scheme incorporates analogue and digital DLLs to align phases of two different frequency clocks. Simulation results show that the internal clock can be synchronised to the reference clock by tracking the dual feedback loop. The whole circuit design was implemented using 0.35 μm CMOS technology. Power dissipation is ~42 mW with a single 3.3 V supply 相似文献
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A bit synchronisation algorithm for channels with data dependent noise which operates with one sample per symbol is presented. The algorithm uses the same information as the Mueller and Muller (M&M) algorithm, and is optimised for operation with data dependent noise. The performance is derived and it is shown that significant improvements over the M&M algorithm can be obtained in practical optical channels 相似文献
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在蔡式电路的L臂上增加一个RLC并联回路构造了一个超混沌五阶自治电路,对其进行数学建模和系统的理论分析,并结合数值仿真详细研究了其混沌动力学性态。通过对其相空间吸引子、庞卡莱映射、Lyapunov指数谱的分析表明,电路在参数值改变时,呈现出超混沌态、混沌态和周期态的振荡形式。最后对该电路从Hopf分叉变化到超混沌吸引子过程中的信号频谱进行了计算机模拟,估计其频谱分布范围并给出了电路的频谱分布特征。 相似文献
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The behaviour of a differential coincidence-type self bit synchroniser at low s.n.r. has been examined for both uncorrelated and correlated input noise. It has been found that the performance of this synchroniser is comparable with that of a digital-data-transition tracking loop, and is better than that of an early-late-gate bit synchroniser. 相似文献
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This paper presents an analysis of a quasi-resonant circuit for soft-switched inverters. The quasi-resonant circuit provides zero-voltage instants for zero-voltage inverter switching by pulling down the DC link voltage momentarily to zero without increasing the peak value of the nominal DC link voltage. Switches in the quasi-resonant circuit can also be turned off at zero current/voltage conditions. The proposed circuit allows creation of zero voltage conditions for inverter soft-switching under loaded and no-load conditions. The operating principle of this circuit is explained, and the analysis of each operating mode is described. Design criteria for achieving zero voltage switching are derived from the general mathematical analysis. Operation of the circuit has been verified by PSPICE simulation and experiments 相似文献
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Matsui M. Momose H. Urakawa Y. Maeda T. Suzuki A. Urakawa N. Sato K. Matsunaga J. Ochii K. 《Solid-State Circuits, IEEE Journal of》1989,24(5):1226-1232
The design and performance of a high-speed 1 M*1-bit SRAM with ECL I/O are described. The 6.5*16.5-mm/sup 2/ chip was fabricated with a 0.8- mu m BiCMOS process technology. A modified double-word-line (MDWL) structure and a bit-line peripheral circuitry with normally-on bit-line equalization circuit are used to achieve high-speed read operation. The read speed is further enhanced by a novel ECL-to-CMOS-level converter with a double-latch configuration. The converter dissipates no DC current and contributes to low power consumption together with an automatic power-saving function, utilizing the address transition detection (ATD) technique. The access time is typically 8 ns, and the active power is 500 mW at 50 MHz.<> 相似文献
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Equivocation in nonlinear feedforward carrier synchronisers considerably degrades the symbol error rate performance. A simple asymptotic (high E/sub s//N/sub 0/) expression for the equivocation probability is derived for two types of averaging filter and general nonlinearity. The expression is proven accurate in the E/sub s//N/sub 0/ region of practical interest. The results extend previous work.<> 相似文献
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静电放电模拟器电路建模分析 总被引:1,自引:0,他引:1
从实际的静电放电模拟器结构出发,根据接触放电时静电放电电流的主要特征,考虑到静电模拟器本身、连接线及回路电缆与地平面间产生的分布参数的影响,建立了一个新的静电放电模拟器等效电路模型,并用PSPICE软件对等效电路进行模拟分析,得到了与实测波形基本一致的电流波形.利用该模型讨论了各分布参数对放电电流的影响.结果表明:模拟器体电阻与地间的电感对电流波形影响不大,因此可以忽略,但其与地之间的分布电容对电流波形的低频段有重要影响;连接线分布参数对电流波形的第一峰值及波形光滑度都有影响;回路电缆分布参数主要影响了电流波形中第二个波峰峰值及其位置. 相似文献
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Wennekers P. Nowotny U. Huelsmann A. Kaufel G. Koehler K. Raynor B. Schneider J. 《Electronics letters》1991,27(17):1529-1532
A 10 Gbit/s bit-synchroniser circuit has been fabricated using an enhancement/depletion 0.3 mu m recessed-gate AlGaAs/GaAs/AlGaAs quantum well FET process. The differential gain of the exclusive-or phase comparator circuit is measured to be 371 mV/rad. The phase margins for monotonous phase comparison are -54/+21 degrees relative to the 'in bit cell centre' position of the negative going clock edge. The chip has a power dissipation of 160 mW when using a supply voltage of 1.90 V.<> 相似文献
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An analysis is presented of the performance of a serial symbol timing recovery (STR) circuit which employs an Exclusive-OR circuit for conventional coherent digital modulated communication systems. The output of the timing circuit is a nearly sinusoidal wave whose zero crossings indicate the appropriate sampling instants for extraction of the data. Assuming that the data pulses entering the timing path are even symmetric, exact analytical expressions for the mean and mean-squared values of the timing wave and for the RMS phase jitter are derived as a function of various system parameters such as channel band limiting, postfiltering, delay element, and power spectral density of noise. Numerical results, also checked by computer simulations, show that considerable improvement can be obtained in jitter performance, in addition to the advantages over other STR techniques of lower cost and simpler hardware implementation 相似文献
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N. D. Biryuk Yu. B. Nechaev E. V. Latysheva 《Radioelectronics and Communications Systems》2007,50(6):336-342
Solutions of problems arising during composition of differential equations for a parametric circuit are discussed. A typical Lyapunov stability problem for a parametric circuit is considered. 相似文献
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Pradeep Shah 《Solid-state electronics》1975,18(12):1099-1106
Vertical multijunction (VMJ) solar cells have generated considerable interest due to their improved performance in terms of conversion efficiency and radiation tolerance compared to the conventional planar solar cells. Fabrication of VMJ cells with junction density of 2000 junctions/cm is now possible using advanced fabrication technologies. This work describes an analysis of some of the VMJ cell structures now being fabricated—especially the ones that combine the enhanced red response and radiation tolerance of the VMJ concept and blue response of conventional planar cells. A distributed equivalent circuit model is used for analysis of complicated junction configurations—which otherwise would be very cumbersome using conventional carrier transport equations.
The VMJ cell structures were analyzed to study their device characteristics and their sensitivity to various material and fabrication parameters such as epitaxial layer resistivity and carrier lifetimes. The results show that the conversion efficiency is higher than conventional devices due to efficient carrier collection with a superior radiation tolerance. The cells, however, degrade more rapidly compared to planar cells at higher radiation levels determined by the structural parameters. 相似文献
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A new multiband multiport circuit is presented in this letter. This circuit, designed for microwave phase detection applications, can be used in multiband direct conversion front-ends, phased-array antenna drivers or other microwaves amplitude or phase measurements. A complex vector, named /spl Gamma/, based on multiport output voltages, is introduced for direct RF phase measurements. An excellent match of simulation and measurement results is obtained in all frequency bands. 相似文献
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