沉积温度对射频磁控溅射TiN薄膜结构和表面形貌的影响

在不同沉积温度(25~400°C)下,利用射频磁控溅射技术在Si(100)基底上制备了TiN薄膜。采用X射线衍射仪和原子力显微镜研究了沉积温度对膜结构和表面形貌的影响,计算了晶面间距和晶格常数,分析了薄膜的应力性质。实验结果表明,不同沉积温度下制备的TiN薄膜主要含有(111)和(220)两种取向,以(220)为择优取向;随着温度的升高,薄膜晶化质量先提高然后趋于稳定。薄膜内应力为压应力,且随温度的升高而有所增大。随沉积温度升高,薄膜晶粒尺寸变小,表面结构更加均匀致密。     

石墨表面磁控溅射钛膜的结构与工艺参数研究

为解决石墨表面制备的不粘涂层结合力低的问题,可采用钛薄膜作为过渡层以提高结合力。本文采用磁控溅射技术在石墨基片表面制备钛薄膜,通过优化溅射工艺参数,提高钛薄膜的附着力。通过正交试验设计研究溅射功率、溅射气压和沉积时间对钛薄膜组织结构、表面粗糙度以及附着力的影响。利用扫描电镜（SEM）等分析了钛薄膜的微观形貌、物相结构及表面粗糙度,进行划格试验评估了薄膜的附着力。研究得到优化工艺参数为：溅射功率200 W,溅射气压1.2 Pa,沉积时间50 min。薄膜微观呈现岛状结构,颗粒尺寸约150 nm。钛薄膜为密排六方α-Ti结构,沿（002）晶面择优生长,这可能与石墨基体的片层状结构有关。溅射工艺参数的优化可以有效提高钛薄膜与石墨基体的附着力。     

工艺因素对磁控溅射法制备钛酸锶钡薄膜性能的影响

磁控溅射技术在薄膜制备领域有着广泛的应用.本文在介绍磁控溅射法制备薄膜材料的基本原理和流程基础之上,详细分析了溅射工艺参数(溅射功率、温度、溅射气压、氧分压)对BST薄膜性能的影响,并提出了研究中需要解决的一些问题.     

后处理对NdFeB永磁体表面磁控溅射铝薄膜耐腐蚀性能的影响

采用直流磁控溅射技术在烧结型Nd Fe B永磁体表面沉积Al薄膜,研究了喷丸和铬酸盐化学转化后处理方法对Al薄膜微观形貌和耐腐蚀性能的影响。研究表明,喷丸可以有效地减少铝薄膜的孔隙率,提高膜层的致密性;喷丸压力为0.20 MPa时,Al膜层的致密性最好且不会剥落;喷丸和化学转化复合后处理可以极大程度地提高Al薄膜的耐蚀性,其耐中性盐雾腐蚀时间可由镀态时的155 h提高到320 h。     

磁控溅射偏压对Cr薄膜密度以及表面形貌的影响

利用磁控溅射技术,在不同偏压条件下在Si(001)基底上沉积了金属Cr薄膜样品。用同步辐射装置对样品进行了X-射线反射率测试,采用X-射线反射率分析法研究了不同偏压下Cr薄膜密度的变化。发现当偏压小于300 V时,偏压对所沉积的薄膜起到紧致的效果,偏压为300 V时薄膜密度最大;当偏压大于300 V时,薄膜密度减小。另外,为了探究偏压对薄膜表面形貌的影响,用扫描电子显微镜对各样品进行了表面分析,发现在偏压较小时薄膜表面较为平整;随着偏压增大,表面呈现界面分明的岛状分布。     

光催化多孔TiO2薄膜的表面形貌对亲水性的影响

从含聚乙二醇（ＰＥＧ）的钛醇盐溶胶前驱体中通过溶胶－凝胶工艺在普通钠钙玻表面制备了多孔锐钛矿型ＴｉＯ２纳米薄膜。用扫描电镜（ＳＥＭ）,Ｘ射线光电子能谱（ＸＰＳ）和红外光谱（ＩＲ）分析了ＴｉＯ２薄膜表面的微结构,结果表明,随着前驱物中聚乙二醇的加入量和分子量的增加,聚乙二醇热分解后的薄膜中产生的气孔就越多且孔径越大,同时ＴｉＯ２薄膜表面的羟基含量增加且表面粗糙度增大。接触角测试表明：随着薄膜中气孔数     

工艺参数对磁控溅射TiN膜结构的影响

为研究工艺参数在磁控溅射中对TiN薄膜生长的影响,通过改变工艺参数使用直流磁控溅射设备在N_2流量5 sccm,N_2压强为5 Pa生长TiN薄膜。采用射频磁控溅射法在N_2流量5 sccm、N_2压强5 Pa等生长参数下,制备了TiN薄膜。采用电子扫描显微镜(SEM)、X射线衍射仪(XRD)对样品进行了分析,结果显示样品具有纳米级TiN薄膜的基本特征。实验表明,气氛中过多Ti原子的存在,影响了Ti原子和N原子的结合,也不利于TiN薄膜的生长。     

金刚石薄膜的表面成分和形貌对表面能的影响

采用微波等离子体化学气相沉积法制备了(111)面和(100)面金刚石薄膜。测量了金刚石薄膜与液体的接触角、金刚石薄膜表面粗糙度和电阻率。通过扫描电镜、X射线衍射、X射线光电子能谱研究了金刚石薄膜的表面纯度和形貌等对表面能的影响。结果表明:金刚石纯度越高、表面粗糙度越大、晶粒尺寸越小,其表面能越大。经过空气等离子体后处理的金刚石薄膜的纯度和亲水性明显提高。随着在空气中放置时间的增加,亲水性逐渐减弱。在空气中放置相同时间,O2等离子体后处理的金刚石薄膜比H2等离子体后处理的金刚石薄膜亲水性好。     

烧结温度对ZrO2薄膜表面形貌及力学性能的影响

采用溶胶-凝胶法在玻璃基体表面制备了经300℃,400℃和500℃烧结热处理的ZrO2薄膜.利用X射线衍射仪、原子力显微镜和纳米压痕仪研究了烧结温度对ZrO2薄膜表面形貌和力学性能的影响.实验结果表明,随着烧结温度的增加,ZrO2的晶体结构由少量的单斜晶相逐渐转变为单斜晶相和四方晶相的混合相.薄膜表面形貌逐渐改善,薄膜的表面粗糙度和颗粒度依次减小,薄膜的表面粗糙度分别为10.5 nm、7.2 nm和5.6 nm,ZrO2的粒径分别为188 nm、153 nm和130 nm.ZrO2薄膜的弹性模量和硬度都显著提高,薄膜的弹性模量分别为89.6 GPa、114.2 GPa和128.9 GPa,薄膜的硬度分别为7.6 GPa、10.3 GPa和15.1 GPa.     

负偏压对磁控溅射镀镍薄膜组织结构的影响

采用磁控溅射技术在钼圆片基体表面制备了镍薄膜,并用扫描电镜、平整度仪和X射线衍射分析仪对其进行了表征。研究了不同负偏压对薄膜附着力、微观结构、平整性、晶粒取向以及大小的影响。结果表明,随负偏压增大,薄膜与基体结合力明显增强;适当的负偏压能改善薄膜表面致密性和平整性,在450 V时达到最优。但当负偏压进一步升高到600 V时,镍膜的表面起伏反而变大,平整性有所下降。负偏压对镍膜晶面生长的择优取向影响并不明显,而晶粒尺寸随负偏压增加呈增大的趋势。     

Influence of Process Parameters on the Conductivity and Surface Morphology of Polypyrrole Films

Influence of electrochemical process parameters such as monomer and electrolyte concentrations, current density, pH of the electrolyte, and type of electrolyte have been studied during polymerization of polypyrrole (Ppy). The changes in the conductivity of synthesized Ppy film for different electrolytes were observed by chronopotentiograms recorded during the electrochemical polymerization and it was confirmed by measuring it using four probe techniques. It was found that the electrochemical process parameters have a considerable influence on the conductivity of the film. The Ppy film was synthesized on a platinum substrate by electrochemical polymerization with different electrolytes such as potassium nitrate, sodium nitrate, sulphuric acid, hydrochloric acid, potassium chloride, sodium chloride, oxalic acid, and sodium salicylate, under galvanostatic condition over a wide range of pH of the reaction medium and applied current density. The different concentration ratios of pyrrole and sodium nitrate were considered during synthesis of Ppy films. It has been observed that the polymerization potential increases with the pH and applied current density. One could synthesize Ppy film with very good surface morphology and conductivity with optimized process parameters. The characterization of synthesized Ppy film was done by electrochemical technique, electrical conductivity, Fourier transform infrared (FTIR) spectroscopy and scanning electron microscopy (SEM).     

Surface Morphology of Heat-Treated Ceramic Thin Films

The morphology of surfaces of several ceramic materials has been examined using transmission electron microscopy. The approach used was to prepare a sample for examination in the microscope, carefully clean it, and then heat-treat it. In the case of the oxides studied (alumina and spinel) the samples were heated in air; the non-oxides (α-SiC and β -SiC) were annealed under vacuum. The morphology in all but one case was such that the surface faceted parallel to the nearest low-index plane to give well-defined terraces; these were separated by ledges which also tended to facet parallel to the traces of low-index planes. The exception was the {1100} alumina surface, which appears to be unstable in air at temperatures close to 1400°C. A computer program using a multislice approach was used to estimate the height of the steps on the (0001) surface; the step heights appear to be multiples of the c lattice parameter. A reconstruction of this surface as a result of this heat treatment is also proposed.     

Microstructure,Surface Morphology and Photoluminescence Properties of Al-Doped ZnO Thin Films Prepared by Plasma Focus Method

Al-doped ZnO (AZO), as one of the most promising transparent conducting oxide (TCO) materials, has now been widely utilized in thin film solar cells. In this research the optimization process of AZO thin films deposited by plasma focus device was carried out by investigation of its physical properties under different deposition conditions for its utilize as a front contact for the Cadmium Telluride (CdTe) based thin film solar cell applications. The effects of number of focus shots and angular position of substrate on the microstructure, surface morphology and photoluminescence properties of the thin films have been systematically studied. X-ray diffraction (XRD) study confirmed the polycrystalline nature of the all deposited AZO thin films. XRD analysis also revealed that crystal structure characteristics of obtained samples strongly depend on deposition conditions (number of shots and angular position). Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses revealed the structure growth and enhancement of surface roughness, with increasing of focus shots or decreasing of angular position. From Photoluminescence (PL) emission spectra, the variations of structural defects and band gap energy for all the AZO thin films prepared under different deposition conditions were also discussed.     

不同退火温度In掺杂ZnO薄膜的表面形貌和光学性质

用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和紫外-可见分光光度计观察4%(原子分数)In掺杂ZnO薄膜的微结构、表面形貌和光学性质.微结构分析表明:薄膜仍为六角纤锌矿结构,由于In杂质的掺入,使得薄膜结晶度劣化,退火温度对薄膜微结构影响较小;表面形貌观察结果显示:薄膜表面凹凸不平,450 ℃退火处理薄膜表面最平坦,尺寸在50～100 nm之间小颗粒致密、均匀地分布于起伏的表面;紫外可见透射谱研究结果表明:随着退火温度升高,薄膜光学带宽E_g由3.267 eV减小到3.197 eV,该结果可能与薄膜表面残余应力发生变化密切相关.     

退火处理对玻璃表面沉积的ZnO薄膜微观形貌与性能的影响

以Zn(NO3)2·6H2O为前驱体,采用超声喷雾热解法在500℃下、在钠钙硅浮法玻璃衬底上制备了ZnO薄膜.分别在不同温度(500、550、600℃)和不同时间(30、60、120min)对制备的ZnO薄膜进行了退火处理.研究退火条件对ZnO薄膜微观结构、形貌以及光学性能的影响.结果表明:退火处理能提高ZnO薄膜的c轴取向;随着退火时间的延长,ZnO薄膜附着强度随之增加,但c轴取向度呈先增强,至120min时又开始呈下降的趋势;随着退火温度的升高,ZnO薄膜的c轴取向亦出现先显著增强,之后又开始下降的趋势,同时可见光透过率亦呈相同的变化趋势.最佳退火条件为500℃温度保温60min,此时薄膜不仅c轴取向生长优势明显,结晶质量良好,表面颗粒大小均匀,致密平滑,同时薄膜的可见光透过率由退火前的70％提高到90％.     

工艺参数对TiO2薄膜性能的影响

研究了基本工艺参数（如聚乙二醇的添加量和分子量、热处理制度、薄膜层数）对溶胶凝胶法制备TiO2薄膜性能的影响。结果表明：添加分子量2000的聚乙二醇1．0g（相对于100ml溶胶）,以2℃/min的速度缓慢升温至550℃,保温1h,制得的TiO2 10层薄膜,表现出分解稀醋酸的光催化活性较好。     

组织结构对Co-Ni-P薄膜形貌和磁性的影响

化学镀 Co- Ni- P薄膜镀态下为非晶态结构 ,表面较为平整 ;经 30 0℃× 1 h热处理 ,发生了晶化转变 ,表面由“圆锥峰“所构成 ;随加热温度的提高 ,镀层析出了 Co2 P相 ,并发生了由密排六方结构的α- Co向面心立方结构的β- Co的同素异构转变。非晶态 Co- Ni- P薄膜的矫顽力较低 ,矩形比较高 ;薄膜向晶态转变时 ,矫顽力和矩形比皆呈上升趋势 ;50 0℃× 1 h热处理 ,薄膜由α- Co和 Co2 P相构成时 ,且在晶界上偏聚较多磷的影响下 ,矫顽力和矩形比的值达到最高 ;温度继续升高 ,晶粒长大 ,第二相粗化时 ,薄膜的矫顽力和矩形比都减小。化学镀 Co- Ni- P薄膜具有优秀的高密度垂直记录特性。     

Microstructure Development in Unsupported Thin Films

To better understand the role of the substrate in the microstructural evolution of thin films, unsupported nanocrystalline yttrium-stabilized zirconia (ZrO₂:16%Y or YSZ) films were examined as a function of temperature and annealing time. Grain growth, texturing, and pinhole formation were measured using transmission electron microscopy (TEM) and electron diffraction. Films were produced and subsequently annealed on metallic grids using a previously developed technique that results in near full density films at low annealing temperatures. Microstructural evolution in these films was unique compared with constrained films. Grains were found to spheroidize much more readily, ultimately resulting in the formation of porosity and pinholes. Grain growth was found to stagnate at a size particular to each annealing temperature, presumably due to the effects of Zener pinning. It is proposed that the lack of substrate strain and confinement effects allows for the dominance of surface energetics with respect to microstructural evolution.     

前驱体对溶胶—凝胶法制备TiO_2薄膜微结构与形貌的影响

文章采用溶胶—凝胶法分别以四氯化钛和钛酸四丁酯作为前驱体,在热处理温度为400~500℃条件下,制得晶相结构为锐钛矿Ti O2薄膜,但以四氯化钛为前驱体的Ti O2薄膜易开裂;以钛酸四丁酯为前驱体的Ti O2薄膜更加致密均匀,薄膜品质更优;所制得的Ti O2薄膜表现出半导体性质,方块电阻在几十兆欧每平方范围内;Ti O2薄膜随着热处理温度升高,导电性增强。