Monolithically integrated multichannel SiGe/Si p-i-n-HBTphotoreceiver arrays

A low-power, short-wavelength eight-channel monolithically integrated photoreceiver array, based on SiGe/Si heterojunction bipolar transistors, is demonstrated. The photoreceiver consists of a photodiode, three-stage transimpedance amplifier, and passive elements for feedback, biasing and impedance matching. The photodiode and transistors are grown by molecular beam epitaxy in a single step. The p-i-n photodiode exhibits a responsivity of 0.3A/W and a bandwidth of 0.8 GHz at λ=0.88 μm. The three-stage transimpedance amplifier demonstrates a transimpedance gain of 43 dBΩ and a -3 dB bandwidth of 5.5 GHz. A single channel monolithically integrated photoreceiver consumes a power of 6 mW and demonstrates an optical bandwidth of 0.8 GHz. Eight-channel photoreceiver arrays are designed for massively parallel applications where low power dissipation and low crosstalk are required. The array is on a 250-μm pitch and can be easily scaled to much higher density. Large signal operation up to 1 Gb/s is achieved with crosstalk less than -26 dB. A scheme for time-to-space division multiplexing is proposed and demonstrated with the photoreceiver array     

Design, modeling, and characterization of monolithically integratedInP-based (1.55 μm) high-speed (24 Gb/s) p-i-n/HBT front-endphotoreceivers

High-speed, long-wavelength InAlAs/InGaAs OEIC photoreceivers based on a p-i-n/HBT shared layer integration scheme have been designed, fabricated and characterized. The p-i-n photodiodes, formed with the 6000 Å-thick InGaAs precollector layer of the HBT as the absorbing layer, exhibited a responsivity of ~0.4 A/W and a -3 dB optical bandwidth larger than 20 GHz at λ=1.55 μm. The fabricated three-stage transimpedance amplifier with a feedback resistor of 550 Ω demonstrated a transimpedance gain of 46 dBΩ and a -3 dB bandwidth of 20 GHz. The monolithically integrated photoreceiver with a 83 μm p-i-n photodiode consumed a small dc power of 35 mW and demonstrated a measured -3 dB optical bandwidth of 19.5 GHz, which is the highest reported to date for an InAlAs/InGaAs integrated front-end photoreceiver. The OEIC photoreceiver also has a measured input optical dynamic range of 20 dB. The performance of individual devices and integrated circuits was also investigated through detailed CAD-based analysis and characterization. Transient simulations, based on a HSPICE circuit model and previous measurements of eye diagrams for a NRZ 2³¹-1 pseudorandom binary sequence (PRBS), show that the OEIC photoreceiver is capable of operation up to 24 Gb/s     

Modulator driver and photoreceiver for 20 Gb/s optic-fiber links

Two integrated circuits, a modulator driver and a photoreceiver integrating a metal-semiconductor-metal (MSM) photodetector, a differential transimpedance amplifier and two limiting amplifier stages for high-speed optical-fiber links are presented. The IC's were manufactured in a 0.2 μm gate-length AlGaAs-GaAs high-electron mobility transistor (HEMT) technology with a f_T of 60 GHz. The modulator driver IC operates up to 25 Gb/s with an output voltage swing of 3.3 V_p-p at each output. The 1.3-1.55 μm wavelength monolithically integrated photoreceiver optoelectronic integrated circuit (OEIC) has a bandwidth of 17 GHz with a high transimpedance gain of 12 kΩ. Eye diagrams are demonstrated at 20 Gb/s with an output voltage of 1 V_p.p     

8-element linear array monolithic p-i-n MODFET photoreceivers usingmolecular beam epitaxial regrowth

An 8-element linear array of single-stage integrating front-end photoreceivers using molecular beam epitaxial (MBE) regrowth was investigated. Each element consisted of a p-i-n In_0.53Ga_0.47As photodiode integrated with a selectively regrown pseudomorphic In_0.65Ga_0.35As/In_0.52Al_0.48 As MODFET. Cutoff frequencies of 1.0-μm discrete regrown MODFETs were f_t=24 GHz and f_max=50 GHz. Transconductance of the regrown MODFETs was as high as 495 mS/mm with a current density (I_ds) of 250 mA/mm. The 3-dB bandwidth of the photoreceiver was measured to be 1 GHz. The bit rate sensitivity at 1 Gb/s was -31.8 dBm for BER 10^-9 using 1.55 μm excitation for a photoreceiver with an anti-reflection coating. The single-stage amplifier exhibited up to 25 dB flatband gain of the photocurrent, and a two-stage amplifier was up to 31 dB of gain. Good uniformity between each photoreceiver element in the array was achieved. Electrical crosstalk between photoreceiver elements was estimated to be ~-34 dB     

40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology

An optoelectronic integrated circuit operating in the 1.55-/spl mu/m wavelength range was realized on GaAs substrate through metamorphic technology. High indium content layers, metamorphically grown on a GaAs substrate, were used to fabricate the optoelectronic integrated circuits (OEICs) with -3 dB bandwidth of 40 GHz and 210 V/W of calculated responsivity. The analog OEIC photoreceiver consists of a 12-/spl mu/m, top-illuminated p-i-n photodiode, and a traveling wave amplifier (TWA). This receiver shows 6 GHz wider bandwidth than a hybrid photoreceiver, which was built using comparable, but stand-alone metamorphic p-i-n diode and TWA. With the addition of a buffer amplifier, the OEIC shows 7 dB more gain than the hybrid counterpart. To our knowledge, this is the first 40 Gbit/s OEIC achieved on a GaAs substrate operating at 1.55 /spl mu/m.     

High-Speed Low-Noise p-i-n InGaAs Photoreceiver at 2-$mu$ m Wavelength

A p-i-n InGaAs photoreceiver with a 3-dB bandwidth of 6 GHz at 2-mum wavelength is presented. The photodiode, having a responsivity of 1.34 A/W and a dark current of 400 nA, is coupled to a transimpedance amplifier to provide a conversion gain of 670 V/W at room temperature.     

A Si BiCMOS transimpedance amplifier for 10-Gb/s SONET receiver

A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in 0.25-μm modular Si BiCMOS technology. The transimpedance of 55 dBΩ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of -17 dBm was measured at 10 Gb/s for a bit-error rate of 10^-12     

37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55-/spl mu/m wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dB/spl middot//spl Omega/. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC.     

High-performance monolithically integratedIn0.53Ga0.47As/InP p-i-n /JFET optical receiverfront-end with adaptive feedback control

An optical transimpedance receiver front-end that is adaptable to a wide range of bit-rates up to 3 Gb/s has been realized by monolithically integrating high efficiency p-i-n photodiodes with low noise InGaAs junction field effect transistors. The transimpedance-bandwidth product of the receiver is 2.8 THz Ω. The average equivalent input noise current for full circuit bandwidth is 4.0 pA/√Hz. The preamplifier for nonreturn to zero data transmission without equalization of the frequency response at 1.55 μm offers a sensitivity of -41.5 dBm and -29.5 dBm at 140 Mb/s and 2.4 Gb/s, respectively. The dynamic range is 17 dB at 2.4 Gb/s and exceeds 30 dB at 500 Mb/s     

High-performance monolithic pin-MODFET transimpedance photoreceiver

The performance characteristics of a transimpedance photoreceiver using a In_0.53Ga_0.47As p-i-n photodiode integrated with a 0.1-μm-gate-length regrown pseudomorphic In_0.60Ga _0.40As MODFET grown by MBE have been investigated. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver exhibits a FWHM value of 90 ps, which indicates a bandwidth of ~6 GHz and expected 10-Gb/s operation. The transimpedance gain was as high as 55 dB-Ω with an 800-Ω feedback resistor     

Characterization of surface-undoped In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobilitytransistors

High-performance 0.3-μm-gate-length surface-undoped In_0.52 Al_0.48As/In_0.53Ga_0.47As/InP high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) have been characterized and compared with a surface-doped structure. At 18 GHz, the surface-undoped HEMT has achieved a maximum stable gain (MSG) of 19.2 dB compared to 16.0 dB for the surface-doped structure. The higher MSG value of the surface-undoped HEMTs is obtained due to the improved g_m/g₀ ratio associated with the surface-induced electric field spreading effect. Comparison of identical 0.3-×150-μm-gate devices fabricated on surface-undoped and -doped structures has shown greatly improved gate leakage characteristics and much lower output conductance for the surface-undoped structure. It is demonstrated that the surface potential, modulated by different surface layer designs, affects the charge control in the conducting channel, especially the carrier injection into the buffer, resulting in excess output conductance. Several millimeter-wave coplanar waveguide (CPW) monolithic distributed amplifiers have been successfully fabricated by using the surface-undoped HEMT structure. A high gain per stage distributed amplifier with 170-dB±1-dB small-signal gain across a frequency band of 24-40 GHz, a W-band monolithic integrated circuit with 6.4-dB gain at 94 GHz, and a broad bandwidth distributed amplifier with 5-dB gain across a frequency band of 5 to 100 GHz have been demonstrated by using the surface-undoped structures     

A monolithic 5 Gb/s p-i-n/HBT integrated photoreceiver circuit realized from chemical beam epitaxial material

The authors report on a high performance monolithic photoreceiver fabricated from chemical beam epitaxy (CBE) grown InP/InGaAs heterostructures, incorporating a p-i-n photodetector followed by a transimpedance preamplifier circuit configured from heterojunction bipolar transistors (HBTs). The optoelectronic integrated circuit (OEIC) was fabricated on a semi-insulating Fe-doped InP substrate. Microwave on-wafer measurements of the frequency response of the transistors yielded unity current gain cutoff frequencies of 32 GHz and maximum oscillation frequencies of 28 GHz for collector currents between 2 and 5 mA. The photoreceiver was operated up to 5 Gb/s, at which bit rate a sensitivity of -18.8 dBm was measured at a wavelength of 1.5 mu m. The results demonstrate that the CBE growth technique is suitable for high performance HBT-based OEICs.<>     

Performance of interface engineeredSiNx/ICL/InP/In0.53Ga0.47As/InP dopedchannel HIGFET's

SiN_x/InP/InGaAs doped channel passivated heterojunction insulated gate field effect transistors (HIGFETs) have been fabricated for the first time using an improved In-S interface control layer (ICL). The insulated gate HIGFETs exhibit very low gate leakage (10 nA@V_GS =±5 V) and I_DS (sat) of 250 mA/mm. The doped channel improves the DC characteristics and the HIGFETs show transconductance of 140-150 mS/mm (L_g=2 μm), f_t of 5-6 GHz (L_g=3 μm), and power gain of 14.2 dB at 3 GHz. The ICL HIGFET technology is promising for high frequency applications     

A MODFET-based optoelectronic integrated circuit receiver foroptical interconnects

The design, fabrication, and characterization of a 0.85-μm sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is based on pseudomorphic InGaAs on GaAs modulation-doped field-effect transistors (MODFETs) and metal-semiconductor-metal (MSM) photodetectors. High-performance quarter-micrometer MODFETs with f_t's of ~70 GHz are utilized in a two-stage transimpedance amplifier. An asymmetric and a symmetric amplifier design are compared. The symmetric design is found to provide the desired zero DC offset voltage for a variety of supply voltages. Excess MSM-detector dark current and low-frequency internal gain are greatly reduced through the use of a silicon passivation layer and/or AlGaAs cap layer. Receiver transimpedances between 100 and 5000 Ω are obtained by varying the bias on an active feedback resistor. The parasitic capacitances of this common-gate feedback FET are studied. A transimpedance amplifier bandwidth as high as 14 GHz and an overall photoreceiver bandwidth of 11 GHz are measured     

A monolithically integrated InGaAs/InP photoreceiver operating witha single 5-V power supply

A monolithic photoreceiver consisting of an InGaAs p-i-n photodiode and a transimpedance preamplifier in which four junction field-effect transistors four level shift diodes, and a feedback resistor are integrated is described. This photoreceiver has been designed to operate with a single 5-V power supply for the purpose of simplifying the whole transmission system. Easily producible device structures were adopted to increase the yield of the photoreceivers. A circuit transimpedance of 965 Ω and a 3-dB frequency of 240 MHz have been obtained for 5-V operation. Transmission of a 400-Mb/s NRZ signal has been achieved     

CMOS单片光接收机的带宽设计

设计了一个由调节型级联跨阻抗放大器(TIA)和双光电二极管(DPD)构成的光电集成接收机.给出了DPD小信号电路模型和单片集成光接收机的带宽设计方法,给出限制DPD和光接收机带宽的重要因素,分析和模拟了这个光电集成接收机的带宽,用低成本的0.6μm CMOS工艺设计出1.71GHz带宽和49dB跨阻增益的接收机,并给出测试结果.     

Monolithically integrated InP-based front-end photoreceivers

The performance characteristics of a monolithically integrated front-end photoreceiver, consisting of a photodiode and a MODFET amplifier, were analyzed and measured. A vertical scheme of integration was initially used to realize a photoreceiver circuit on InP consisting of an InGaAs p-i-n diode, an InGaAs/InAlAs pseudomorphic MODFET, and passive circuit elements. The device structures were grown by single-step molecular beam epitaxy with an isolating layer in between. The microwave performance of 1-μm-gate MODFETs in the circuit is characterized by f_T=9 GHz, although identical discrete devices have f_T=30-35 GHz. The degradation is due to additional parasitic capacitances present in this integration scheme. In spite of this disadvantage the bandwidth of the circuit is 2.1 GHz. Integration of the p-i-n diode with 1.0- and 0.25-μm-gate MODFETs has also been done in a planar scheme using regrowth, and receiver bandwidths of 6.5 GHz were measured. This value is comparable to that of hybrid circuits with InP-based devices     

In0.53Ga0.47As junction field-effecttransistors as tunable feedback resistors for integrated receiverpreamplifiers

In_0.53Ga_0.47As active feedback junction field-effect transistors (JFETs) for use in integrated transimpedance photoreceivers are discussed. By varying the gate-to-source voltage V_GS, the resistance can be continuously tuned between 3 and 40 kΩ with a drain-to-source capacitance of <10 fF. The temperature coefficient of resistance is between -5 and -20 Ω/°C (for V_GS less than the pinch-off voltage). The combination of large resistance and low capacitance can result in high receiver sensitivity without sacrificing amplifier dynamic range. The feedback FET was fabricated adjacent to 1.8-μm-gate-length JFETs with transconductances of 110 mS/mm, gate-to-source capacitances of 1.3 pF/mm, and DC amplifier voltage gains of 100. The compatibility of these transistor structures indicates that an integrated preamplifier with dynamically tunable bandwidth can be realized     

Monolithic balanced p-i-n/HBT photoreceiver for coherent optical heterodyne communications

Two InGaAs p-i-n photodetectors connected in a balanced configuration have been monolithically integrated with a transimpedance preamplifier made from InP-InGaAs heterojunction bipolar transistors (HBTs) to realize a balanced optoelectronic integrated circuit (OEIC) receiver. The receiver, with a bandwidth of 3 GHz and a common mode rejection of 25 dB, has a sensitivity of -49 dBm at a bit error rate of 10/sup 9/ under NRZ FSK reception at 200 Mb/s.<>     

应用于10Gb/s光接收机的全差分CMOS跨阻前置电路设计

设计了一种的低成本、低功耗的10 Gb/s光接收机全差跨阻前置放大电路。该电路由跨阻放大器、限幅放大器和输出缓冲电路组成,其可将微弱的光电流信号转换为摆幅为400 mVpp的差分电压信号。该全差分前置放大电路采用0.18 m CMOS工艺进行设计,当光电二极管电容为250 fF时,该光接收机前置放大电路的跨阻增益为92 dB,-3 dB带宽为7.9 GHz,平均等效输入噪声电流谱密度约为23 pA/(0~8 GHz)。该电路采用电源电压为1.8 V时,跨阻放大器功耗为28 mW,限幅放大器功耗为80 mW,输出缓冲器功耗为40 mW,其芯片面积为800 m1 700 m。