等离子体聚合沉积聚烯丙胺薄膜改性医用不锈钢及内皮细胞粘附行为研究

采用等离子体聚合沉积方法,通过调控占空比参数,在医用不锈钢表面合成含有伯胺基的聚烯丙胺薄膜,并进一步在聚烯丙胺薄膜表面固定了明胶分子.漫反射傅立叶红外光谱和X射线光电子能谱的分析结果表明聚烯丙胺薄膜表面含有伯胺基团,明胶分子有效地固定到了聚烯丙胺薄膜表面.静态接触角测试结果表明固定了明胶分子的聚烯丙胺薄膜表现出较好的亲水性,具有较高的表面能.体外内皮细胞粘附实验及Alamar Blue评价结果表明固定了明胶分子的聚烯丙胺薄膜表现出良好的促内皮细胞粘附性能,且固定明胶分子的脉冲等离子体聚烯丙胺薄膜表面表现出更高的内皮细胞活性.     

等离子体聚合沉积聚烯丙胺薄膜改性聚酯及体外血小板粘附研究

采用脉冲和连续波方式沉积等离子体聚烯丙胺薄膜改性聚酯(PET)材料表面,并进一步在等离子体聚烯丙胺薄膜表面固定肝素分子.利用衰减全反射红外光谱、X射线光电子能谱和接触角测试等离子体聚烯丙胺薄膜的元素成分、组成和表面能,采用对三氟甲基苯甲醛衍生法和甲苯胺蓝法分别检测了等离子体聚烯丙胺薄膜表面的伯胺基浓度和固定肝素分子的聚烯丙胺薄膜表面的肝素浓度.实验结果表明,脉冲等离子体聚合薄膜PPAa-P表面的伯胺基浓度为1.4%,而连续波等离子体聚合薄膜PPAa-C表面伯胺基浓度只有0.71%.等离子体聚烯丙胺薄膜改性的PET的表面能增加,其中PPAa-P改性的PET表面的表面能的极性分量增加较大.脉冲等离子体聚烯丙胺薄膜表面固定的肝素浓度为4.07μg/cm2,为连续波等离子体聚烯丙胺薄膜表面固定肝素浓度2.23μg/cm2的1.8倍.体外血小板粘附实验结果表明,表面肝素化的PET表面有较低数量的血小板粘附和激活,尤其是在固定肝素分子的脉冲等离子体聚烯丙胺薄膜改性的PET表面表现出更好的抗凝血性.     

ICP—CVD制备氟化非晶碳（a—C：F）薄膜的研究

本文使用CH2F2为源气体,利用电感耦合等离子体增强化学气相沉积(ICP-CVD)法在不同放电模式(连续或脉冲)、沉积气压、射频功率和位置下制备了a-C∶F薄膜.用原子力显微镜(AFM)观察了薄膜的表面形貌,通过FTIR、XPS对其结构进行了表征.研究结果表明:放电模式、放电气压、射频功率、基底位置均对薄膜的表面粗糙度(RMS)和组成具有重要的影响.在脉冲波模式下,增加放电气压,薄膜RMS值的变化呈现出先降低后升高的变化趋势;基底距离线圈的距离越远,所沉积薄膜的RMS值越小.而在连续波模式下,距离线圈较远的B、C位置薄膜的RMS值却相对较高.增加放电功率导致沉积薄膜的RMS值较小.本文也对CH2F2等离子体进行了发射光谱(OES)诊断研究.结果表明,对比脉冲波模式,连续波放电时等离子体中含碳物种明显减少.结合表征结果和OES结果对薄膜的生长机理进行了探讨.     

高气压脉冲DBD等离子体合成胺基功能薄膜及其性能研究

采用高气压脉冲DBD等离子体,以丙烯胺(allylamine)为聚合单体,氩气为辅助气体,合成胺基薄膜.利用接触角测定仪(WCA),傅立叶变换红外光谱(FTIR),原子力显微镜(AFM)对功能薄膜的结构、成分以及形貌进行测试表征.讨论了不同等离子体放电参数,如:气压、占空比、时间和功率对放电沉积薄膜的影响.结论是:高气压脉冲DBD等离子体放电能够有效地聚合含胺基的薄膜,气压、占空比、时间和功率对沉积薄膜有较大的影响.     

采用连续、脉冲等离子体合成低表面能薄膜

采用连续与脉冲射频等离子体合成低表面能薄膜SiCxOy.通过对薄膜性能的表征,发现等离子体放电模式影响聚合膜的化学结构、表面成份、表面能数值大小,认为采用脉冲射频等离子体更易合成低表面能聚合物.     

沉积参数对含氢非晶碳膜结构及性能的影响

本文利用射频等离子体增强化学气相沉积（RF-PECVD）技术,以CH4、H2为气源,Ar-为稀释气体,通过增加过渡层和改变输入功率和气体成分比例（CH／H2）,在不锈钢基底上制备了含氢非晶碳膜（a-C：H）。利用拉曼光谱（Raman）、X射线光电子能谱（XPS）、纳米显微硬度计和摩擦磨损试验机等研究手段对含氢非晶碳膜的形貌、结构、显微硬度和耐磨性进行了表征。Ramas光谱和XPS分析表明,薄膜是由sp^2和sp^3杂化组成的非晶碳膜。显微硬度和摩擦学测试表明,在较低射频功率和富氢等离子体中沉积的a—C：H膜表面光滑、结构致密,薄膜的硬度、摩擦系数、耐磨性和结合力等性能较好。     

高气压脉冲DBD等离子体聚合羧基功能薄膜的研究

在40kHz脉冲介质阻挡放电（DBD）产生等离子体，以丙烯酸为单体，在2000Pa的高气压下，聚合带羧基的功能薄膜。采用接触角测试仪（WCA）、傅里叶红外光谱仪（FTIR）、X光电子能谱（XPS）研究了占空比对沉积薄膜化学结构、表面性能的影响。实验得到，中频脉冲DBD放电在高气压下制备的薄膜官能团含量较高；结果同时表明薄膜的性能受脉冲放电占空比的影响较大，占空比越小，薄膜的化学结构与单体更相近，官能团密度越多，但薄膜的稳定性较差。     

不锈钢基体预处理对合成类金刚石碳膜的影响

本文研究了在射频等离子体增强化学气相沉积工艺中不同的预处理方法对不锈钢基底上类金刚石碳膜生长的影响。所沉积的碳膜的结构和形貌分别用激光Raman光谱和扫描电子显微镜进行了分析，薄膜与基底的结合力通过划痕实验进行了表征。实验结果表明，通过采用合适的过渡层能显著提高类金刚石碳膜与基底的结合力，而通过化学腐蚀的方法对提高结合力的帮助不大。     

靶电流密度对热丝增强等离子磁控溅射制备Cr_2N薄膜结构与性能的影响

采用等离子体增强平衡磁控溅射技术在316L奥氏体不锈钢基体表面制备了不同靶电流密度条件下的Cr_2N薄膜,并检测分析了靶电流密度对薄膜表面形貌、相结构、力学性能、膜基结合力和摩擦磨损性能的影响。结果表明,薄膜呈致密柱状结构,以Cr_2N(111)择优取向为主。当靶电流密度为0.132 mA/mm~2时,WN相与Cr_2N并存;随着靶电流密度的增加,薄膜厚度逐渐增加,硬度、弹性模量略有下降,膜基结合增强。薄膜与基体结合处呈脆性失效。靶电流密度0.132 mA/mm~2时,最高薄膜硬度及模量分别为33及480GPa,且磨损量最小。靶电流密度0.264mA/mm~2时,最大膜机结合力为36.6N。经过镀Cr_2N薄膜后,试样表面硬度、耐磨性明显提高。     

占空比对复合离子沉积TiZrN薄膜的影响

本文采用复合离子镀方法制备Ti Zr N薄膜,研究基体脉冲偏压占空比变化对薄膜结构和性能的影响规律。利用扫描电子显微镜观察薄膜表面的形貌;采用X射线衍射分析薄膜的微观结构;薄膜的沉积速率由XP-2台阶仪测得;通过维氏硬度计表征薄膜的硬度。实验结果表明:Ti Zr N薄膜的表面粗糙度和硬度都随着占空比的增加而减小;Ti Zr N薄膜的微观结构随占空比发生变化;Ti Zr N薄膜的沉积速率随占空比的增大呈现出先增大后减小的趋势。     

Preparation and characterisation of titanium dioxide films for catalytic applications generated by anodic spark deposition

The advanced plasma electrochemical process of anodic spark deposition (ASD) was used to generate photoactive titanium dioxide films on titanium metal substrates. A shift to easier-to-machine substrates was demonstrated by the deposition of a titanium film with physical vapour deposition onto different materials such as glass, silicon, and stainless steel prior to ASD. Obtained films were characterised by scanning electron microscopy, surface area measurement (Brunnauer-Emmett-Teller method, BET), X-ray diffraction, electron-probe microanalysis, and glow discharge spectroscopy. Additionally, film thickness was determined by eddy current measurements. Standard ASD conditions were defined as 180 V applied voltage over a 180 s hold time, a voltage ramp of 20 V/s, a duty cycle of 0.5 and a frequency of 1500 Hz. Most prominent characteristics of the titanium films produced under these standard conditions are a film thickness of ≤80 μm, a surface area of approximately 51 m²/g (BET) and an anatase content of approximately 30% and rutile content of approximately 70%. Furthermore, the film formation process is elucidated and the dependence of film thickness on deposition time and the dependence of the anatase and rutile content on the deposited mass are shown for varying ASD conditions.     

装饰薄膜ZrN的中频反应磁控溅射沉积工艺研究

利用中频反应磁控溅射技术在1Cr18Ni9Ti不锈钢基底上沉积ZrN薄膜。通过控制N/Ar、溅射功率和基体偏压等参数,得到不同实验条件的ZrN膜层。通过对膜层颜色测量和AES分析,研究N分压强对ZrN膜层质量的影响。实验结果表明：工作气压0.3Pa,溅射功率5kW,基体偏压-150V、占空比50%等工艺参数一定的前提下,N分压强在不同的范围内,可以分别制备出视觉效果类似于18K、23K和纯金的氮化锆膜层。     

脉冲真空弧源沉积类金刚石薄膜耐磨特性研究

本文利用脉冲真空弧源沉积技术在Cr17Ni14Cu4不锈钢和Si(100)基体上制备了类金刚石(DLC)薄膜,研究在不同基体偏压下,DLC薄膜的结构与性能.采用拉曼光谱和X射线光电子能谱(XPS)研究DLC薄膜的原子结合状态,利用CSEM销盘摩擦磨损试验机研究其耐磨性,利用HXD1000B显微硬度仪测试其显微硬度,并采用压痕法评价其结合力.研究结果表明:DLC薄膜与基体结合牢固.随着基体偏压的提高,DLC薄膜内sp3键含量增大,薄膜硬度提高.Cr17Ni14Cu4不锈钢表面沉积DLC薄膜后,耐磨性大幅度提高,本文探讨了DLC薄膜的耐磨机理.     

不锈钢基底上离子源辅助激光制备CeO2薄膜及其结构分析

室温下在不锈钢基底上应用Ar⁺离子源辅助,准分子脉冲激光沉积了CeO₂薄膜．研究结果表明：在合适的工艺条件下,直接在不锈钢基底上可以制备出c轴取向的CeO₂薄膜,但这时的CeO₂薄膜在其a－b平面内没有观察到织构的信息;进一步在相同的条件下,首先在不锈钢基底上制备一层YSZ（Yttria－StabilizedZirconia）,再在YSZ／不锈钢上制备CeO₂薄膜,实验结果显示出这时的CeO₂薄膜不但是c轴取向,同时在其a－b平面内织构．CeO₂（202）射线φ扫描图给出其全宽半峰值为20°     

Microanalysis on the Hydrogen Ion Irradiated 50 wt pct TiC-C Films

The 50 wt pct TiC-C films were prepared on stainless steel substrates by using a technique of ion beam mixing. These films were irradiated by hydrogen ion beam with a dose of 1×10^18 ions/cm^2 and an energy of 5 keV. Microanalysis of X-ray photoelectron spectroscopy （XPS） and secondary ion mass spectroscopy （SIMS） were used to analyze the films before and after hydrogen ion irradiation and to study the mechanism of hydrogen resistance.     

Effect of Sample Configuration on Droplet-Particles of TiN Films Deposited by Pulse Biased Arc Ion Plating

Orthogonal experiments are used to design the pulsed bias related parameters,including bias magnitude, duty cycle and pulse frequency,during arc ion deposition of TiN films on stainless steel substrates in the case of samples placing normal to the plasma flux.The effect of these parameters on the amount and the size distribution of droplet-particles are investigated,and the results have provided sucient evidence for the physical model,in which particles reduction is due to the case that the particles are ne...     

Influence of different conducting substrates on magnetic properties of electrodeposited Ni–Fe thin films

Electrodeposition of Ni–Fe soft magnetic alloy on copper and stainless steel substrates was performed in chloride bath. The deposition parameters such as current density, pH, temperature and deposition time have been investigated. From the investigation the optimized deposition parameters were current density 3.5 mA/cm², pH 3, temperature 30 °C and deposition time 15 min. The Ni–Fe magnetic alloys deposited on copper and stainless steel substrates under optimized deposition parameters are subjected to various characterizations. The structural and surface morphology of the Ni–Fe films were detected by using X-ray diffractogram (XRD) and scanning electron microscope (SEM) respectively. The constituents in the films were determined by energy dispersive X-ray spectroscopy (EDAX) technique. The magnetic properties such as the coercivity (H_c) and saturation magnetization of the films were studied with the help of vibrating sample magnetometer (VSM). From the magnetic studies it is concluded that the grain size are create a considerable impact on magnetic behavior of the films on both the substrates. The films prepared on stainless steel substrate of 0.1 M concentration at optimized deposition parameters exhibits higher coercivity (5010 Oe) which seems to be ideal for magnetic sensor applications.     

Effect of substrate type, dopant and thermal treatment on physicochemical properties of TiO2–SnO2 sol–gel films

Thin nanocrystalline TiO₂–SnO₂ films (0–50 mol% SnO₂) were prepared on quartz and stainless steel substrates by sol–gel coating method. The obtained films were investigated by XRD, Raman spectroscopy and XPS. The size of the nanocrystallites was determined by XRD–LB measurements. We ascertained that the increase of treatment temperature and concentration of SnO₂ in the films favour the crystallization of rutile phase. The substrate type influences more substantially the phase composition of the TiO₂–SnO₂ films. It was established that a penetration of elements took place from the substrate into the films. TiO₂ films deposited on quartz substrate include a Si which stabilizes anatase phase up to 600 °C. The films which are deposited on stainless steel substrate and treated at 700 °C show the presence of significant quantity of rutile phase. This phenomenon could be explained by the combined effect of Sn dopant as well as Fe and Cr, which also are penetrated in the films from the steel substrate. The titania films doped up to 10 mol% SnO₂ on stainless steel possess only 12–17 nm anatase crystallites, whereas the TiO₂–(10–50 mol%) SnO₂ films contain very fine grain rutile phase (4 nm).     

不锈钢衬底两面同时液相电沉积类金刚石薄膜及其沉积机理研究

为了利用液相电沉积技术实现在金属衬底表面全方位电沉积类金刚石(DLC)薄膜,采用不同尺度的不锈钢片作为衬底,在表面电沉积了DLC薄膜,利用X射线光电子能谱、Raman光谱和扫描电子显微镜分别对衬底两面薄膜的化学成分、微观结构和表面形貌进行了分析。结果显示:对于尺度大于石墨阳极的不锈钢衬底,仅在衬底正对着阳极的一面实现了DLC薄膜的沉积;而对于尺度小于阳极的不锈钢衬底,在衬底两面都有DLC薄膜沉积,且两面薄膜结构相似,形貌相近。利用准静态电场理论对实验结果进行了解释,提出在金属衬底表面实现液相电沉积DLC薄膜的前提条件是存在垂直于衬底表面的电场分量,为进一步实现在复杂形状的导电性衬底表面沉积DLC薄膜提供了理论依据。     

SiC coatings for first-wall candidate materials by R.F. sputtering

The r.f. sputtering technique was applied to form SiC coating films on first-wall candidate materials such as molybdenum, stainless steel and pyrolytic carbon at various temperatures. The coating films were examined by means of scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy and roughness factor (RF) measurements. It was found that the coating films consisted of α-SiC and grew at relatively low temperatures, namely 300 °C, 600 °C and 800 °C on molybdenum, 304 stainless steel and pyrolytic carbon surfaces, respectively. The surfaces of α-SiC films grown above these temperatures were relatively smooth with small RFs in comparison with those prepared at lower temperatures. Lower temperature deposition gave rise to amorphous and rough coating films with considerably larger RFs.