溅射功率对Sn薄膜负极材料循环性能的影响

采用磁控溅射法分别在150、250、400 W功率下制备了3种锂离子电池用Sn薄膜负极材料.通过X射线衍射光谱法(XRD)、扫描电子显微镜法(SEM)、恒电流充放电对3种薄膜材料的结构、形貌及循环性能进行了表征.实验结果表明,随着溅射功率增加,薄膜的非晶成分减少,晶化加剧,颗粒粗化.在相同溅射时间20 min的情况下.当溅射功率为250 W时,获得的Sn薄膜电极具有最好的循环性能,首次嵌锂容量为653.8 mAh/g,30次循环后容量维持在515mAh/g.容量保持率达79%.     

溅射时间对Sb薄膜负极材料循环性能的影响

采用射频磁控溅射法在300W功率下分别镀膜15、30、45min,制备了三种锂离子电池用Sb薄膜负极材料。通过XRD、SEM、ICP、恒电流充放电对三种薄膜材料的结构、形貌及循环性能等进行了表征。实验结果表明,当溅射时间为30min时,Sb薄膜电极具有最好的循环性能,首次嵌锂容量高达640mAh/g,20次循环后容量维持在323mAh/g,容量保持率为51%。     

溅射时间对Sn薄膜负极材料循环性能的影响

采用射频磁控溅射法在Cu箔基片上分别溅射5min、15min和25 min,制备了3种锂离子电池用Sn薄膜负极材料。通过XRD、SEM、ICP、恒电流充放电等方法对3种薄膜材料的结构、形貌及循环性能进行了表征。结果表明,在相同溅射功率250 W的情况下,随着溅射时间的增加,薄膜晶化程度加剧,颗粒增大并呈球形化趋势。样品的首次库仑效率逐渐升高,首次嵌锂容量逐渐降低。当溅射时间为15 min时,样品的循环性能优于其它两个样品,首次放电（嵌锂）比容量为710 mAh/g,30次循环后容量保持在650 mAh/g。     

氮化锡负极薄膜的制备与性能研究

氮化锡是一种新型薄膜锂电池负极材料,采用射频反应磁控溅射法制备氮化锡负极薄膜,系统研究了反应溅射功率和气流比对氮化锡薄膜结构的影响,并对其充放电性能进行了研究.实验结果表明,在溅射功率75 W,N2/(N2 Ar)流量比0.5的条件下所制备氮化锡薄膜结晶度较好,表面致密具有良好的电性能,首次充放电效率超过60%,50次循环后放电比容量仍保持250 mAh/g.     

电解液对TiO2混合电化学电容器性能的影响

采用溶胶-凝胶法制备掺杂Ni、C改性的TiO2电极材料,并对材料的晶型结构、表面形貌及比容量、充放电效率、循环性能、阻抗、比能量和比功率等性能进行了研究.使用1mol/L MeEt3NBF4/PC电解液的电容器,具有良好的可逆性和稳定的循环性能.在500 mA/g的电流下,比容量为13.40mAh/g,放电比能量为24.12Wh/kg,比功率为1012.03W/kg.     

微波法制备锂离子电池正极材料Li_2FeSiO_4/C

采用湿化学法-微波法制备了Li2FeSiO4/C正极材料。通过X射线衍射光谱法(XRD)、扫描电子显微镜法(SEM)、透射电子显微镜法(TEM)、X射线能谱(EDS)和恒流充放电测试,对样品结构、形貌、组成和电化学性能进行了表征和分析。结果表明该法可以快速高效制备出Li2FeSiO4/C材料;在640 W功率下微波处理6 min,获得了晶粒细小、均匀和良好碳包覆的Li2FeSiO4,该产物具有较高的放电比容量和良好的循环性能。室温下以1/16 C进行充放电,首次放电比容量为120.7 mAh/g,10次循环后放电比容量保持为100.2 mAh/g。     

碳包覆硫化锑纳米棒的制备及其储钠研究

以三氯化锑(SbCl3)和九水硫化钠(Na2S·9 H2O)为原料,以聚乙烯吡咯烷酮为表面活性剂,以乙二醇为辅助溶剂,在200℃温度条件下,采用溶剂热法成功制备了一维直径为80～190 nm,长度约为40μm的Sb2S3纳米棒材料,并对该合成材料进行碳包覆.将该合成材料作为钠离子电池负极材料时,表现出优异的储钠性能.对于Sb2S3/C电极,在电流密度为200 mA/g时,首次放电比容量为1019.2 mAh/g,循环50次后,比容量保持在566.8 mAh/g,当电流密度提高为500 mA/g时,循环100次后,比容量保持在480.4 mAh/g.     

Sn-SnSb/石墨和Sn-SnSb/PAn复合材料的电化学性能

以柠檬酸钠为络合剂、NaBH4为还原剂,将Sn(Ⅱ)和Sb(Ⅲ)盐在水溶液中共还原制得Sn-SnSb合金.将该合金粉分别和石墨、聚苯胺(Pan)按质量比4:1经机械球磨形成Sn-SnSb/石墨、Sn-SnSb/Pan两种复合材料,并将它们作为锂离子蓄电池阳极材料进行电化学性能测试.结果表明,Sn-SnSb/石墨复合材料可逆比容量超过600 mAh/g,而Sn-SnSb/Pan复合材料的可逆比容量也达到542 mAh/g.Sn-SnSb/石墨复合材料的循环性能优于Sn-SnSb/Pan复合材料,同时这两种复合材料的循环性能均优于纯Sn-SnSb.     

锂离子电池正极材料LiFePO_4的复合改性研究

为了提高LiFePO4的充放电性能,通过高温固相法合成了Li0.98M0.02FePO4/C(M=Cr、W)及Li1.03M0.02Fe0.98PO4/C(M=Zr、Ni)两类橄榄石型正极材料。运用X射线衍射光谱法(XRD)、扫描电子显微镜法(SEM)、能量散射X射线谱(EDX)和电化学测试对合成产物的晶体结构、颗粒形貌和电化学性能进行了表征。结果表明:Li0.98Cr0.02FePO4/C的放电比容量最高达到157.3mAh/g,且多次循环后容量几乎无衰减;在大电流充放电倍率下,材料依然能保持优良的循环性能,Li0.98W0.02FePO4/C首次放电比容量可达130.2mAh/g,10次循环后容量保持率为97%。离子掺杂和碳包覆改性能有效地提高LiFePO4的比容量和循环性能。     

不同方法合成LiVPO4F/C的电化学性能研究

以葡萄糖、NH4H2PO4、V2O5和LiF为原料,分别通过液相法和固相法合成了锂离子电池正极材料LiVPO4F/C复合材料,并通过X-射线衍射(XRD)、扫描电镜(SEM)及电化学测试技术对复合材料的结构、形貌及电化学性能进行了表征。结果表明,两种方法所合成复合材料均由三斜结构的LiVPO4F与碳组成;液相法所合成的材料首次放电比容量分别为133.7(0.2 C)、124.9 mAh/g(0.5 C)和118.7 mAh/g(1 C),明显高于相同测试条件下固相法所合成材料的首次放电比容量[131.2(0.2 C)、121.4 mAh/g(0.5 C)和104.9 mAh/g(1 C)],并且液相法合成的复合材料循环性能优于固相法合成的复合材料;液相法合成的LiVPO4F/C复合材料具有良好的循环性能和倍率性能,其2 C和5 C的放电比容量分别高达114 mAh/g和98 mAh/g,循环50次后,容量损失率均小于1%。     

Preparation of BaPbO3 Electrode Thin Films by RF Magnetron Sputtering

For electrode materials of Pb(Zr,Ti)O₃ (PZT) thin films in ferroelectric random access memory (FeRAM), various materials have been studied. As new electrode material with which the polarization and fatigue properties are improved, we take notice of barium metaplumbate BaPbO₃ (BPO). Because the BPO contained lead (Pb) and oxygen is conductor that adopted same perovskite structure as PZT. BPO thin films were prepared by rf magnetron sputtering on various substrates. (SiO₂/Si, MgO, Al₂O₃ and Pt-coated substrates), and influence of growth conditions (sputtering gas, rf power, the substrate-heating temperature and post anneals) on crystallization and conductivity were investigated. In case of post anneal after sputtering at room temperature, perovskite single phase was obtained above 400°C. In case of substrate heating while sputtering, without post anneal, perovskite single phase was obtained at 350–500°C on SiO₂/Si substrates (110) preferred orientation BPO films obtained at low temperature, and resistivity of the films decreased at decreasing sputtering temperature. Resistivity of the film at substrate temperature 350°C was 3 × 10^?3 Ω cm. In the case of single crystal substrate, the BPO films were epitaxially grown. Orientation of the films was varied with the sputtering condition. The epitaxial PZT thin films were also grown on the BPO, revealing that PZT(111)[011] //BPO(111)[011] //Pt(100)[011] //MgO(100)[011] and PZT(111)[011] //BPO(111)[011] //Pt(111)[011] //Al₂O₃(001)[100] structures were obtained, and their ferroelectric properties were also evaluated.     

磁控溅射镍膜及其性能的研究

采用磁控溅射法在聚对苯二甲酸乙二醇酯(PET)基材上制备了镍薄膜。用扫描电子显微镜(SEM)分析溅射功率、溅射真空室气压等工艺参数对镍薄膜表面形貌的影响;研究了溅射工艺参数与薄膜性能之间的关系。实验结果表明,在室温下,随着溅射气压的增加,沉积速率和粒径都是先增加后又逐渐变小,而薄膜的电阻则随着压强的增大先减小后逐步增大;薄膜的表面粗糙度随着溅射功率的增加而增大;膜层与基材的剥离强度较大且均匀,膜层结合较为牢固,薄膜的耐摩擦性能较为优良。     

溅射功率对CoFeB薄膜磁与结构特性的影响

以不同功率溅射制备了CoFeB合金薄膜样品并在高真空下退火处理。发现低功率生长的薄膜始终具有磁各向同性,而高功率生长的薄膜随着退火温度的升高,由起始的单轴磁各向异性逐渐向磁各向同性转变。X射线衍射分析也印证了CoFeB薄膜随退火温度的升高,薄膜由非晶态逐渐向结晶态转变。当退火温度高于400℃时,低功率生长的CoFeB样品的矫顽力大于高功率生长薄膜的矫顽力。同时发现低功率生长的CoFeB的(110)峰值高于高功率生长的样品峰值,表明低功率生长的薄膜晶粒尺寸更大。     

Dielectric characteristics investigation of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 ferroelectric thin films

By the radio frequency (RF) magnetron sputtering methods, (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ (BSTZ) ferroelectric thin films were deposited on the Pt/Ti/SiO₂/Si(100) substrates. The crystal structural and microstructure of these thin films were analyzed by means of the XRD, SEM, and AFM. Moreover, the dielectric characteristics were also investigated by the C-V and J-E analyses. The optimal deposition parameters for these BSTZ thin films were: RF power is 160 W, oxygen concentration is 25%, substrate temperature is 580°C, and chamber pressure is 0.075 mPa. Under these optimal deposition conditions, the (111) and (110) oriented polycrystalline of the BSTZ thin films grow easily. And under a bias voltage of 0.5 MV/cm, the dielectric constant and leakage current density of the BSTZ thin films are 191 and 3×10^?8 A/cm², respectively. In addition, under various measured temperatures (0 ～ 80°C) and frequencies (100 kHz ～ 1 MHz), all the dielectric constants remain almost unchanged. Compared to BSTZ thin films reported previously, in this study, the deposited thin films have the advantage of lower leakage current and hence are suitable for the applications of dynamic random access memory.     

Fabrication and evaluation of LaCrO3 thin film heaters

Lanthanum chromium oxide (LaCrO₃) has excellent high‐temperature properties. LaCrO₃ doped with alkaline earth metals also has high electric conductivity. The purpose of this study is to fabricate thin film heaters using LaCrO₃ doped with Ca by RF magnetron sputtering method. The crystal structure of thin films was evaluated and the surface form was studied. The results show that the thin film deposited on Si(100) single crystal and quartz glass substrates in Ar gas had a strong orientation and that its surface form was comparatively smooth. The crystal structure of the thin films deposited on Si(100) and quartz glass substrate at temperatures of 700 and 800 °C by sputtering in a mixture of Ar and O₂ gases was the same as the crystal structure of LaCrO₃. The heating characteristics of a thin film heater on Si(100) substrate with Pt electrodes were evaluated by measurement of the equilibrium temperature‐current (T–I) and resistance‐equilibrium temperature (R–T) characteristics. The maximum equilibrium heating temperature was about 1100 °C. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 139(3): 18–25, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.1156     

Ni65Co35薄膜各向异性磁电阻性能的研究

选用Ｎｉ６５Ｃｏ３５合金靶材，利用射频磁控溅射的方法成膜，采用四控针法测量磁电阻率，分别研究了溅射工艺参数（工艺气压、偏压、功率、基片温度等）对薄膜电阻性能的影响，并对影响的机理作了理论上的分析；另外还对Ｎｉ６５Ｃｏ３５薄膜的热处理动力学进行了研究，求取了激活能。研究结果表明，溅射工艺参数对Ｎｉ６５Ｃｏ３５薄膜的电阻力有较大的影响，适当的溅射参数能有效地提高磁电阻率；Ｎｉ６５Ｃｏ３５薄膜退火处理后     

Growth and characterization of device quality ZnO on Si(111) and c-sapphire using a conventional rf magnetron sputtering

In this article, it is shown that high quality ZnO films were grown on Si(111) and Al₂O₃(0001) substrates using a conventional rf magnetron sputtering. High-resolution X-ray diffractometry (HR-XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and photoluminescence (PL) investigations clearly confirmed that the ZnO films grown on Al₂O₃ (0001) at substrate temperatures above 650^∘C are single crystal as well as high optical quality. It is also estimated in both cases grown on Si and Al₂O₃ that an introduction of template pre-grown at 500^∘C can induce a homogeneous interface and improvement of emission characteristic by relaxing the strain caused by large lattice and thermal mismatch between the film and substrate and by reducing defect density in interface region.