柔性基底上电沉积法制备铜铟硒太阳电池薄膜

采用简单的二电极系统,以大面积的铂网为阳极,钼或不锈钢薄片为阴极,以氯化铜、三氯化铟、亚硒酸的水溶液为电沉积液,利用一步电沉积技术在不锈钢薄片柔性基底上电沉积制备铜铟硒(CIS)薄膜前驱体,该前驱体经热处理后得到具有黄铜矿型晶体结构CIS薄膜.采用XRD、SEM和EDAX等对制备的CIS薄膜进行了表征,结果表明所制备CIS多晶薄膜物相纯净、晶型发育好,表面无裂纹,晶粒均匀.     

微波等离子体制备氮杂二氧化钨钒薄膜

根据二氧化钒在68℃附近发生相变的这一特性,选用V2O5和W2O3为前驱物,通过在玻璃片上镀膜,采用微波等离子体增强法,合成了氮杂二氧化钨钒(V0.98W0.02O2-xNy)薄膜.通过XRD表征了样品的组成,用自制的仪器测量了合成样品的相变温度,结果表明:样品为氮杂二氧化钨钒(V0.98W0.02O2-xNy),通过氮掺杂能有效降低二氧化钨钒薄膜的相变温度,相变温度最低可以降至35℃.     

CZTS和CZTSSe纳米晶热注入法合成与性能研究

采用热注入法制备Cu_2ZnSnS4(CZTS)和Cu_2ZnSn(S,Se)4(CZTSSe)纳米晶,研究了不同反应温度对所制备的CZTS和CZTSSe纳米晶的晶体结构、化学组分、形貌及光学性能的影响。实验结果表明:未掺杂Se元素的CZTS纳米晶,当反应温度为230℃时为锌黄锡矿结构,当反应温度在240~280℃范围变化时,锌黄锡矿和纤锌矿结构共存,纳米晶形貌由纳米颗粒和纳米棒组成,其禁带宽度在1.54~1.62eV之间变化。对于掺杂Se元素的CZTS纳米晶,当反应温度在230~260℃范围变化时,为锌黄锡矿结构,而当反应温度为270~280℃时,CZTSSe纳米晶由锌黄锡矿结构和少量纤锌矿结构组成,纳米晶形貌由纳米颗粒组成,其禁带宽度比CZTS的禁带宽度低,禁带宽度在1.41~1.46eV之间变化。     

铬酸镁纳米晶的微波制备与表征

以聚乙烯醇、镁盐和铬盐为原料,采用微波法制备了严格计量比的铬酸镁纳米晶.原料中金属离子与聚乙烯醇单体的摩尔比为1:3,在2.45GHz及不同微波功率作用下,首先制得铬酸镁前驱体.在500℃以上煅烧前驱体一定时间后得到铬酸镁纳米晶.铬酸镁纳米晶的X射线衍射和透射电镜表征表明:微波法能够得到具有良好尖晶石结构的铬酸镁纳米晶,是一种极有前景的合成纳米复合氧化物的新方法.     

蒸发诱导组装合成高度有序纳米TiO2薄膜

将溶胶-凝胶技术与自组装技术相结合,采用蒸发诱导组装合成方法,以四氯化钛为无机前驱体、高分子聚合物为结构导向剂成功制备了表面形貌规整透明的纳米晶二氧化钛薄膜.利用XRD、AFM、N2吸附-脱附仪等测试手段对样品晶型、粒径和形貌进行了表征,结果表明:经450℃热处理的样品表面非常规整,粒径在13nm左右且分布均一.所得锐钛矿晶体尺寸随焙烧温度的升高而增大,而BET比表面积随焙烧温度的升高而减小,800℃下存在锐钛矿相向金红石相的转变.     

DMCPS/CHF3制备的F-SiCOH低k薄膜结构与沉积速率研究

以十甲基环五硅氧烷(DMCPS)和三氟甲烷(CHF3)作为反应气体,采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法,制备了氟掺杂的SiCOH低介电常数薄膜。研究发现:随着CHF3/DMCPS流量比的增大,薄膜的沉积速率呈"N"型变化。根据薄膜结构和成分的傅立叶变换红外光谱仪(FTIR)、X射线光电子能谱(XPS)以及放电等离子体中基团分步的光强度标定的发射光谱(OES)分析可知:薄膜沉积速率的变化是由于CHF3进气量的增加导致薄膜生长从以沉积F-SiCOH薄膜为主过渡到以沉积氟化非晶碳(a-C:F:H)薄膜为主的结果。     

等离子体化学气相沉积制备氮化碳薄膜

以H2、N2和CH4气体为前驱气体,通过等离子体化学气相沉积技术制备氮化碳薄膜。采用场发射扫描电子显微镜(FS-EM)及其附带的能量分散电子谱(EDS)、X射线衍射分析(XRD)、红外光谱(FTIR)和拉曼光谱(Raman)对其结构、表面形貌、元素含量和成键状况进行了分析,并讨论了气体流量比和放电功率对薄膜制备的影响。实验结果表明:沉积的薄膜中含有晶态的C3N4,碳氮原子比接近于理论值0.75,样品中碳氮原子多以C N、C N的形式存在;样品中氮元素的含量随着反应气体中N2含量的增加而增加;放电功率的增大使薄膜的沉积速率增大。     

碳纳米管载碳化钨的制备及其对甲醇 氧化的电催化性能

以质量分数为10 %的偏钨酸铵溶液为前驱体,CH4 /H2 为还原碳化气氛, 采用表面修饰技术 和还原碳化技术制备了碳化钨/碳纳米管(WC/CN T)复合材料.通过XRD , SEM 等对WC/CN T 纳米复合材料进行表征, 结果显示WC/CN T 复合材料是由WC , W2C 和C 三相组成, 碳化钨均匀 地分散于碳纳米管外表面, 粒径约35 ～ 50 nm .用所制备的WC/CN T 粉末微电极, 考察了WC/ CN T 复合材料对甲醇的电氧化行为.结果表明, WC/CN T 复合材料对甲醇的电催化活性优于Pt 微电极和CN T , 在电催化过程中能保持良好的化学稳定性.     

含氮氟化非晶碳(a-C∶F∶N)薄膜电学性能的研究

用射频等离子体增强化学气相沉积(RF-PECVD)法制备氮掺杂氟化非晶碳(a-C∶F)薄膜,用电桥测试薄膜的介电常数,研究不同工艺参量对薄膜电学性能的影响.结果表明:掺杂氮、高射频功率、高沉积温度以及热退火都导致薄膜介电常数上升.     

PI／SiO2纳米杂化薄膜聚集态结构的影响

采用溶胶-凝胶法制备PI/SiO2纳米杂化薄膜.在制备过程中,有机相采用均苯四甲酸二酐(PMDA)和4,4'-二氨基二苯醚(ODA)体系,无机相通过前驱体正硅酸乙酯(TEOS)水解缩舍制得.采用扫描电子显微镜(SEM),原子力显微镜(AFM)等手段表征了PI/SiO2纳米杂化薄膜的微观形貌,并讨论了热亚胺化工艺对PI/SiO2纳米杂化薄膜聚集态结构的影响.研究结果表明,适当提高60℃低温区域停留时间;使亚胺化终止温度达到350℃,并延长350℃的停留时间;减慢高温区升温速率是提高两相相互作用,减少SiO2粒径尺寸的有效方法.     

Ar/CH_4流量比对a-C∶H薄膜沉积速率及性能的影响

为研究气体流量比对非平衡磁控溅射沉积含氢类金刚石薄膜（Diamond-Like Carbon,DLC）沉积速率及性能的影响,在不同Ar/CH4流量比条件下将a-C∶H沉积在单晶硅基底,采用傅里叶红外光谱、椭偏仪、表面轮廓仪对薄膜的沉积速率、光学特性及表面粗糙度进行研究.实验结果表明：引入甲烷气体后,非平衡磁控溅射沉积a-C∶H薄膜沉积速率大幅度提高;在3～5μm波段硅基底上镀制a-C∶H膜具有良好的红外增透特性,薄膜峰值透射率明显受到Ar/CH4流量比的影响,Ar/CH4流量比1∶3时,制备的a-C∶H峰值透过率可达69.24%;a-C∶H薄膜的折射率和消光系数随着CH4流量的增加而增大;a-C薄膜的粗糙度要优于a-C∶H薄膜,a-C∶H薄膜的粗糙度随厚度的增加而变大.     

Structure and Composition of Crystalline Carbon Nitride Films Synthesized by Microwave Plasma Chemical Vapor Deposition

Crystalline carbon nitride thin films were prepared on Si (100) substrates by a microwave plasma chemical vapor deposition method, using CH4/N2 as precursor gases. The surface morphologies of the carbon nitride films deposited on Si substrate at 830℃ are consisted of hexagonal crystalline rods. The effect of substrate temperature on the formation of carbon nitrides was investigated. X-ray photoelectron spectroscopy analysis indicated that the maximum value of N/C in atomic ratio in the films deposited at a substrate temperature of 830℃ is 1 .20, which is close to the stoichiometric value of C3N4. The X-ray diffraction pattern of the films deposited at 830℃ indicates no amorphous phase in the films, which are composed of β- and α-C3N4 phase containing an unidentified C-N phase. Fourier transform infrared spectroscopy supports the existence of C-N covalent bond.     

Structure and Composition of Crystalline Carbon Nitride Films Synthesized by Microwave Plasma Chemical Vapor Deposition

Crystalline carbon nitride thin films were prepared on Si (100) substrates by a microwave plasma chemical vapor deposition method, using CH4/N2 as precursor gases. The surface morphologies of the carbon nitride films deposited on Si substrate at 830℃ are consisted of hexagonal crystalline rods. The effect of substrate temperature on the formation of carbon nitrides was investigated. X-ray photoelectron spectroscopy analysis indicated that the maximum value of N/C in atomic ratio in the films deposited at a substrate temperature of 830℃ is 1.20, which is close to the stoichiometric value of C3N4. The X-ray diffraction pattern of the films deposited at 830℃ indicates no amorphous phase in the films, which are composed of - and -C3N4 phase containing an unidentified C-N phase. Fourier transform infrared spectroscopy supports the existence of C-N covalent bond.     

Characterization of the ZnO thin film prepared by single source chemical vapor deposition under low vacuum condition

ZnO has attracted much attention recently due to its large band gap n-type semiconductor exhibiting, c-orientation, transparent conductivity, optical and luminescence properties[1]. There has been a surge of interest in the growth of high quality thin films of ZnO for its wide applications[2]. Thin films of c-axis oriented zinc oxide have been prepared using various deposition techniques, including sputtering, pulsed laser, ion-beam assisted deposition and atomic layer epitaxy[3]. However, al…     

液相沉积法制备掺银TiO2薄膜及光催化性能

为了提高TiO2薄膜光催化剂的活性,通过在氟钛酸铵、硼酸混合溶液中加入硝酸银,应用液相沉积法(LPD)制备了掺银TiO2薄膜.采用XRD、SEM、XPS、UV-vis等手段对其组成、表面形貌和结构进行了测试表征;并以甲基橙为模型物,进行降解实验评价Ag-TiO2薄膜的光催化性能.实验结果表明:硼酸/氟钛酸铵摩尔比为2～4,热处理温度为400℃,硝酸银掺杂量为0.03 mol/L时,Ag-TiO2薄膜具有良好的锐钛矿相晶型,同时具有较高的光催化性能.     

化学气相沉积法制备碳化铬薄膜的研究

以三（2,2,6,6-四甲基-3,5-庚二酮）化铬为前驱体,采用化学气相沉积（CVD）法在氧化铝（Al₂O₃）陶瓷基板上制备碳化铬（Cr₃C₂）薄膜,其中沉积温度为723 K至923 K,沉积时间为1 200 s。研究了不同沉积温度对Cr₃C₂薄膜的相组成、择优取向、宏观表面、微观结构及电学性能的影响。结果表明,在723 K至923 K下制备得到具有高度（130）择优取向的Cr₃C₂薄膜。随着沉积温度的升高,Cr₃C₂薄膜表面先由光滑变粗糙,后逐渐变光滑;薄膜晶粒呈椭球型生长;薄膜的厚度先增加后减小,从而导致电阻先减小后增大。在798 K时制备得到厚度最大且电阻最小的（130）择优取向的最佳Cr₃C₂薄膜。同时,在实验条件下Cr₃C₂薄膜表面存在少量的碳和Cr₂O₃。     

电化学沉积CdS薄膜及其在CZTS薄膜太阳能电池中的应用

采用硫代硫酸钠、硫酸镉,配以有机酸NTA调节溶液pH值,首次在碱性环境中电沉积制备CdS薄膜,并将其应用到Cu2ZnSnS4（CZTS）薄膜太阳能电池中作为缓冲层．实验探讨了pH值、溶液浓度、沉积电位对薄膜晶体结构、形貌、界面等微观结构以及光学特性的影响、在pH值为9．36、Cd2＋浓度为0．025mol／L、沉积电位为-1．7V时,获得了表面均匀致密而无针孔、近化学计量原子比、禁带宽度为2．4eV的CdS薄膜,将其应用于CZTS薄膜太阳能电池中,所制备的缓冲层CdS薄膜展现了与CZTS薄膜良好的匹配性,CZTS／CdS的P—n结质量得到改善．     

CVD法快速制备SiC过程分析

采用TMS（CH3SiCl3)为原料,H2为载气,Ar为稀释气,在1000－1200℃范围以内以石墨为基体,通过化学气相沉积法（CVD）制备地SiC块体材料,在特定的工艺条件下,SiC的生长速率可达0．6mm/h,结合实验结果,研究了常压SiC-CVD过程中,对SiC生长速率产生影响的若干因素的作用,初步探索了基体尺寸与沉积室尺寸的比例、沉积温度、稀释气流量以及沉积时间对沉积速率的影响,综合分析提高了SiC生长速率的原因。     

Electrocatalytic activity of tungsten trioxide microspheres, tungsten carbide microspheres and multi-walled carbon nanotube-tungsten carbide composites

Tungsten trioxide micropheres were prepared by spray pyrolysis, and tungsten carbide microspheres were produced by spray pyrolysis-low temperature reduction and carbonization technology. Multi-walled carbon nanotube-tungsten carbide composites were prepared by the continuous reduction and carbonization process using multi-walled carbon nanotubes (MWCNTs) and WO₃ precursor by molecular level mixing and calcination. The morphology and structure of the samples were characterized by scanning electron microscope and transmission electron microscope. Furthermore, the crystal phase was identified by X-ray diffraction. The electrocatalytic activity of the sample was analyzed by means of methanol oxidation. Tungsten carbide microspheres were catalytic active for methanol oxidation reaction. Nevertheless tungsten trioxide microspheres and multi-walled carbon nanotube-tungsten carbide composites were not catalytic active for methanol oxidation reaction. These results indicate that tungsten carbide micropheres are promising catalyst for methanol oxidation.     

Impacts of hydrogen dilution on growth and optical properties of a-SiC:H films

Hydrogenatedamorphoussiliconcarbon(a-SiC:H)filmshavefoundagreatdealofusesinsolarcells[1],thinfilmtransistors[2],lightemittingdiodes[3],ultravioletimagesensors[4],microfluidiccoatings[5]andprotectivebarrierforcorrosionorthermaloxidation[6,7],becauseofitsuniquepropertiessuchaswideopticalbandgap,highmechanicalhardnessandchemicalstability.However,astheCcontentincreases,theelectronicandstructuralpropertiesofthefilmstendtobeinferior[8].Althoughinrecentyearsmuchworkhasbeendevotedtoexploringthedeposi…