X波段300 W GaN功率器件技术

介绍一种基于国产氮化镓(GaN)外延材料的X波段300 W GaN高效率内匹配器件技术。该技术采用大栅宽芯片的大信号有源模型和封装管壳、键合引线、电容等无源模型,开展X波段300 W内匹配功率器件的设计。采用四胞匹配合成电路,使用L-C网络提升器件阻抗,通过λ/4阻抗变换网络进行阻抗变换和功率合成,实现阻抗50 Ω匹配,功率分配器和匹配电容使用高Q值陶瓷基片实现。仿真实验证明,该器件在9.5~10.5 GHz频率内输出功率大于300 W,功率增益大于9 dB,功率附加效率大于38.9%。同时研究了器件输出功率和功率附加效率随工作电压、脉冲宽度、占空比变化情况。     

C波段高效率30W功率放大器研制

随着第三代半导体GaN器件技术的不断发展,GaN高电子迁移率晶体管(HEMT)功率器件在电子系统中逐步得到了广泛应用。GaN功率器件具有工作效率高、功率密度大和击穿场强高的特点,非常适合用于大功率、连续波功率放大器设计。基于GaN功率器件大信号模型,采用Microwave Office 2009微波设计软件对功率放大器进行仿真优化,设计并研制出了C波段高效率30 W连续波功率放大器。该放大器功率器件采用了CREE公司C波段GaN HEMT功率器件,实现放大器尺寸为190 mm×50 mm×15 mm,端口阻抗为50Ω。放大器在5 650~5 950 MHz频带内、28 V工作条件下,连续波输出功率大于30 W,增益大于45 dB,效率大于30%。     

基于GaN HEMT器件的P波段小型化40 W发射模块

氮化镓高电子迁移率晶体管(GaN HEMT)器件具有高功率和功率密度、高导热率、高击穿场强、宽工作频带等特点,适合小型化、宽频带、大功率应用.基于GaN功率器件的特点研制了P波段宽带小型化40 W发射模块.通过负载牵引技术对GaN HEMT器件进行了大信号参数的提取,运用ADS软件进行了匹配电路的设计,对功率放大器的性能指标进行了优化,并基于LTC4440和nMOS器件设计了高压脉冲调制电路.研制结果表明,该模块在400 MHz工作带宽内(相对带宽100％)的输出功率为46.6 dBm (45.7 W),功率增益为36.6 dB,功率附加效率(PAE)为40.4％,杂波抑制为65.7 dBc,脉冲项降为0.4 dB,脉冲上升时间为75 ns,脉冲下降时间为50 ns,模块尺寸为50 mm×40 mm×20 mm.     

Ku波段60W AlGaN/GaN功率管

针对Ku波段60W氮化镓内匹配功率管,开展了内匹配电路的设计、合成以及内匹配电路的测试等研究工作,实现了GaN功率HEMT在Ku波段60W输出功率的内匹配电路,并使整个电路的输入、输出电路阻抗提升至50Ω。该功率管采用南京电子器件研究所研制的两个10.8mm栅宽管芯进行合成,最终研制的GaN Ku波段内匹配功率管在28V漏电压、1ms周期、10%占空比及14.0~14.5GHz频带内输出功率大于60W,最高功率输出66W,带内功率增益大于6dB,最大功率附加效率33.1%,充分显示了GaN功率器件在Ku波段应用的性能优势。     

元器件与组件

S波段RF功率晶体管S波段500W RF器件2729GN-500基于碳化硅衬底氮化镓(GaN on SiC)技术,新器件瞄准大功率空中交通管制机场监视雷达(ASR)应用,ASR用于监视和控制在机场大约100英里范围的飞机。在2.7～2.9GHz频段上,2729GN-500晶体管具有出色的500W峰值功率、12dB功率增益和53%漏极效率性能,通过单一器件在这个频段上提供最大功     

S波段GaN微波功率器件的研制

简要介绍了第三代新型半导体材料GaN的特点和优势,基于Agilent ADS微波仿真软件设计并实现了一款工作于S波段基于GaN的高效超宽带微波功率器件。测试结果表明,该器件适用于2.7～3.5GHz的超宽带,连续波和脉冲制式均可工作,在饱和状态下,输出功率大于15W,增益达到13dB,漏极效率超过45%,并在管壳内部实现了匹配和偏置电路,对GaN MOSFET微波功率器件小型化、超宽带、高增益和高效率的优异性能得以验证和实现。     

一种新型C频段高效率移相GaN功率放大器

研制了一种性能优良的全固态C频段高效率移相氮化镓(GaN)功率放大器模块。介绍了该功放模块设计方案及工作原理,并给出了该功放模块技术参数实验测试结果。该模块输出功率30W,带宽10MHz,带有6位移相功能,具有C频段高频率、固态、小型化、高效率、高功率密度、高击穿电压特性,是一种目前国内外尚无类似集成设计的最新高性能氮化镓(GaN)功率放大器模块。因其功放模块输出末级采用了美国Cree公司第三代宽禁带GaN功放管优化设计,实现了固态C频段高效率功率输出。     

蓝宝石衬底上槽栅型X波段增强型AlGaN/GaN HEMT

研制了一款X波段增强型AlGaN/GaN高电子迁移率晶体管(HEMT)。在3英寸(1英寸=2.54 cm)蓝宝石衬底上采用低损伤栅凹槽刻蚀技术制备了栅长为0.3μm的增强型AlGaN/GaN HEMT。所制备的增强型器件的阈值电压为0.42 V,最大跨导为401 mS/mm,导通电阻为2.7Ω·mm。器件的电流增益截止频率和最高振荡频率分别为36.1和65.2 GHz。在10 GHz下进行微波测试,增强型AlGaN/GaN HEMT的最大输出功率密度达到5.76 W/mm,最大功率附加效率为49.1%。在同一材料上制备的耗尽型器件最大输出功率密度和最大功率附加效率分别为6.16 W/mm和50.2%。增强型器件的射频特性可与在同一晶圆上制备的耗尽型器件相比拟。     

C波段160W连续波GaN HEMT内匹配功率器件研制

基于GaN功率器件工艺自主研发的大栅宽GaN高电子迁移率晶体管(HEMT)管芯,采用内匹配技术和宽带功率合成技术相结合的方法,研制出了一款C波段160 W连续波GaN HEMT内匹配功率器件。通过优化管芯的结构,设计出了满足连续波使用要求的大功率GaN管芯,然后进行了内匹配器件的设计,在设计中首先采用负载牵引法进行了器件参数提取,并以此为基础设计了阻抗变换网络进行阻抗变换和功率合成。研制出了工作频率为4.4~5.0 GHz、工作电压32 V、连续波输出功率大于160 W、功率附加效率大于50%、功率增益大于12 dB的GaN HEMT内匹配功率管,具有广阔的工程应用前景。     

Ku波段20W AlGaN/GaN功率管内匹配技术研究

文章的主要目的是研究第三代半导体AlGaN/GaN功率管内匹配问题。以设计Ku波段20WGaN器件为例,研究了内匹配电路的设计、合成以及内匹配电路的测试,实现了GaN功率HEMT在Ku波段20W连续波输出功率的内匹配电路,并使整个电路的输入、输出电路阻抗提升至50Ω。最终所研制的AlGaN/GaNKu波段内匹配功率管在11.8GHz～12.2GHz频带内,输出功率大于20W。在12GHz功率增益大于5dB,功率附加效率29.07%,是目前国内关于GaN功率器件在Ku波段连续波输出的最高报道。     

高效率X波段GaN MMIC功率放大器的研制

突破了GaN MMIC功率放大器的设计、制造、测试等关键技术,研制成功X波段GaN MMIC功率放大器。设计及优化了电路拓扑结构及电路参数,放大器芯片采用了国产外延材料及标准芯片制作工艺。单片功率放大器包含两级放大电路,采用了功率分配及合成匹配电路,输入输出阻抗均为50Ω。制作了微波测试载体及夹具,最终实现了X波段GaN MMIC功率放大器微波参数测试。在8.7～10.9 GHz频率范围内,该功率放大器输出功率大于16 W,功率增益大于14 dB,增益波动小于0.4 dB,输入驻波比小于2∶1,功率附加效率大于40%,带内效率最高达52%。     

An X-Band High-Power and High-PAE PHEMT MMIC Power Amplifier for Pulse and CW Operation

An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Omega input and output impedance. Based on a 0.35 mum gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.     

Two-stage quasi-class-E power amplifier in GaN HEMT technology

This letter presents a two-stage quasi-class-E monolithic microwave integrated circuit power amplifier at 2.0GHz, which is based on field-plated GaN high electron mobility transistor technology. It consists of a driver stage and a power stage. The circuit schematic is described. The amplifier achieves an output power of 37.5dBm into a 50-/spl Omega/ load, a power added efficiency (PAE) of 50%, and a gain of 18.2dB. A power density of 5.6W/mm is achieved.     

A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE

The performance of a compact coplanar microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-/spl mu/m gate-length GaAs power pseudomorphic high electron mobility transistor (PHEMT) process on 4-in wafer, this two-stage amplifier, having a chip size of 16 mm/sup 2/, averages 4-W continuous-wave (CW) and 25% mean power-added efficiency (PAE) in the X-band, with more than 18-dB linear gain. Peak output powers of P/sub -1dB/=36.3dBm (4.3 W) and P/sub sat/ of 36.9 dBm (4.9 W) at 10 GHz with a PAE of 50% were also measured. Compared to previously reported X-band coplanar high-power amplifiers, this represents a chip size reduction of 20%, comparable to the size of compact state-of-the-art microstrip power amplifiers.     

A Compact C‐Band 50 W AlGaN/GaN High‐Power MMIC Amplifier for Radar Applications

A C‐band 50 W high‐power microwave monolithic integrated circuit amplifier for use in a phased‐array radar system was designed and fabricated using commercial 0.25 μm AlGaN/GaN technology. This two‐stage amplifier can achieve a saturated output power of 50 W with higher than 35% power‐added efficiency and 22 dB small‐signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact 14.82 mm² chip area, an output power density of 3.2 W/mm² is demonstrated.     

Gallium nitride based high power heterojunction field effecttransistors: process development and present status at UCSB

The development of GaN based devices for microwave power electronics at the University of California, Santa Barbara (UCSB), is reviewed. From 1995 to 2000, the power performance of AlGaN/GaN-on-sapphire heterojunction field effect transistors improved from 1.1 W/mm to 6.6 W/mm, respectively. Compensating the disadvantages of the low thermal conductivity of the sapphire substrate through heat management via flip chip bonding onto AlN substrates, large periphery devices with an output power of 7.6 W were demonstrated. UCSB also fabricated the first GaN based amplifier integrated circuits. Critical issues involved in the growth of high quality AlGaN/GaN heterostructures by metal-organic chemical vapor deposition and the device fabrication are discussed     

Modeling nonlinear distortion of ultra wideband signals at X-band

Nonlinear distortion in the adjacent channels of an X-band amplifier driven by an ultra-wideband digitally-modulated carrier is analyzed. Statistical properties of the input signal with a complex power series-based behavioral model of the amplifier are used to calculate the output power spectrum. Comparisons are made between measured and predicted adjacent channel power rejection for the X-band monolithic microwave integrated circuit.     

11.GHz GaAs Power MESFET Load-Pull Measurements Utilizing a New Method of Determining Tuner Y Parameters

A Ioad-pull technique utilizing a new method of determining tuner Y parameters is proposed for huge-signal characterization of microwave power transistors. Large-signal input-output transfer characteristics of an active circuit containing a GaAs FET and an input matching circuit are measured by inserting a microstrip tuner between the active circuit output drain terminal and the 50-Omega load. The microstrip-tuner Y parameters are determined by comparing the dc bias-dependent small-signal S parameter S/sub 22/ of the active circuit and that of the circuit which contains the active circuit and microstrip tuner. The reflection coefficient presented to the active circuit output drain terminal is derived from tuner Y parameters. Optimal load impedances for output power, obtained with this new Ioad-pull technique, are used to design X-band GaAs FET power amplifiers. An 11-GHz power amplifier with a 3000-mu m gate-width FET chip delivers 1-W microwave power output with 4-dB gain in the 500-MHz band.     

An X-band four-way combined GaN solid-state power amplifier

An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al-GaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under V_(ds)= 27 V, V_(gs) = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.     

一种GaN宽禁带功率放大器的设计

氮化镓（GaN）作为第三代半导体材料的典型代表之一,由于其宽带隙、高击穿电场强度等特点,被认为是高频功率半导体器件的理想材料。为研究GaN功率放大器的特点,基于Agilent ADS仿真软件,利用负载／源牵引方法设计制作了一种Si波段GaN宽禁带功率放大器（10W）。详细说明了设计步骤并对放大器进行了测试,数据表明放大器在2．3～2．4GHz范围内可实现功率超过15W,附加效率超过67％的输出。实验结果证实,GaN功率放大器具有高增益、高效率的特点。