Tunable doped-fibre vertical cavity surface emitting laser

A simple way to improve the output power of singlemode tunable VCSELs is demonstrated. It is based on a master oscillator power amplifier (MOPA)-like embodiment of a fibre-VCSEL. The reported device, operating at 1.55 μm, uses a single pump source to photoexcite both a semiconductor structure and a doped fibre without compromise in compactness. Initial results show continuous tunability over 11 nm and fibre-coupled output power of 3.1 mW. It is noted that this approach can be extended to any part of the spectrum for which rare-earth doped optical fibres are available.     

Micro-fluidic photonic crystal vertical cavity surface emitting laser

The first monolithic micro-fluidic photonic crystal vertical cavity surface emitting laser (VCSEL), wherein the horizontal and vertical micro-fluidic channels lie within the VCSEL, is reported. The micro-fluidic photonic crystal VCSEL is created with two principal steps after fabrication of the VCSEL. The first step is integrating the two-dimensional photonic crystal with the VCSEL structure. The photonic crystal creates singlemode operation, and acts as the vertical micro-channels. After creating the photonic crystal pattern in the VCSEL, the oxide layer is selectively wet etched to form the horizontal channel. Preliminary results obtained from the introduction of fluid into the micro-channels are presented.     

Spin controlled optically pumped vertical cavity surface emitting laser

It is shown that the output polarisation of optically pumped vertical cavity surface emitting lasers (VCSELs) can be unambiguously controlled by the pump polarisation. The degree of the output polarisation is higher than that of the pump polarisation. It is concluded that the polarisation of VCSELs with spin polarised electrical pumping can be controlled even with low spin injection efficiencies.     

Blue-green optically pumped GaN-based vertical cavity surface emitting laser

Blue-green GaN-based vertical cavity surface emitting lasers (VCSELs) were fabricated with two dielectric Ta₂O₅/ SiO₂ distributed Bragg reflectors. Lasing action was observed at a wavelength of 498.8 nm at room temperature under optical pumping. Threshold energy density and emission linewidth were 189 mJ/cm² and 0.15 nm, respectively. The result demonstrates that blue-green VCSELs can be realised using III-nitride semiconductors.     

Passively modelocked vertical extended cavity surface emitting diode laser

Passive modelocking of a surface emitting diode laser is demonstrated using an extended cavity concept which permits the incorporation of a saturable Bragg reflector mirror into a device designed for large aperture operation as a high-power 980 nm InGaAs multiple quantum-well vertical cavity source.     

High-power vertical cavity surface emitting laser with good performances

Fabrication and performance of a high-power bottom-emitting InGaAs/GaAsP vertical cavity surface emitting laser with 430 /spl mu/m diameter are described. The device realises the maximum room temperature CW output power 1.52 W at 987.6 nm with FWHM 0.8 nm. The far-field divergence angle is below 20/spl deg/. Reliability test shows at 70/spl deg/C an output power 0.35 W over 500 h.     

Multiple-input optical control of vertical cavity surface emitting lasers using intracavity-coupled in-plane lasers

We report new experimental results demonstrating optical bistability and two-input NOR gate operation in intracavity-coupled in-plane and vertical cavity surface emitting lasers (VCSELs) fabricated from the same epitaxial material. The VCSEL (or output) section gain is controlled by separately biased in-plane laser section(s), and depending on the in-plane power output, complete quenching of stimulated emission in the VCSEL is observed. Hysteresis is present in the VCSEL output power versus in-plane laser input power characteristic, and an optical memory effect is observed in the combined device.     

Monolithic integration of photodetector with vertical cavity surface emitting laser

For the first time, monolithic integration of a photodetector with a vertical-cavity surface emitting laser (VCSEL) is demonstrated. The authors have designed and fabricated VCSELs with monolithically integrated pin photodetectors which dynamically monitor (and can thus control) the output power of the lasers. The VCSELs lase at room temperature and emit a highly coherent, low-divergence, circular beam directly from the top surface. The integrated photodetector shows a linear response to the laser emission with an effective responsivity of 0.25 A/W.<>     

High-power surface emitting semiconductor laser with extended vertical compound cavity

Novel, electrically pumped, vertical compound cavity InGaAs lasers emitting at 980 nm are described. These have generated 1 W continuous-wave multimode and 0.5 W continuous-wave in a fundamental TEM/sub 00/ mode and single frequency, with 90% coupling efficiency into a singlemode fibre.     

垂直外腔面发射半导体激光器的热管理方法研究

垂直外腔面发射半导体激光器在高功率运转的同时可以保持良好的光束质量,近年来一直成为研究的热点。本文介绍了垂直外腔面发射半导体激光器的结构及运行原理。由于热管理是其高功率运行的主要限制因素之一,分析了垂直外腔面发射半导体激光器的热管理方法。使用反向生长的外延片通过化学湿法腐蚀去掉砷化镓衬底,得到了约6μm左右的外延片,最后利用808nm的泵浦光进行抽运获得了200mW的连续激光输出。     

长波长垂直腔面发射激光器

给出了长波长垂直腔面发射激光器的器件结构的发展现状，同时对GaInNAs／GaAs垂直腔面发射激光器进行了详细的介绍。最后，给出了所设计的新型1.3μm GaInNAs/GaAs长波长垂直外腔面发射半导体激光器的结构设计，有源区量子阱由980nm半导体激光二极管进行泵浦。这种器件设计实现了激光二极管泵浦与长波长垂直腔面发射激光器的有机结合，同时具有两者的优点。此外，本文还对器件的阈值特性和光输出功率进行了理论计算。     

Microchip vertical external cavity surface emitting lasers

Monolithic vertical external cavity surface emitting lasers of cavity mode volume <1 mm/sup 3/ have been fabricated in the 850 and 980 nm wavelength range. Pump-limited output power >350 mW in a TEM/sub 00/ mode was obtained at 850 nm. Output power >2.5 W was obtained at 980 nm.     

垂直腔表面发射激光器的研究

垂直腔表面发射激光器(VCSEL)是一种应用于光纤通信系统的低成本、高性能的特定波长光源,它具有测试简单、易耦舍以及易形成阵列等独特优势,已在光并行互连及高密度光存贮等领域得到大规模应用.文章介绍了VCSEL的结构和当前的制造工艺水平,阐述了各波段VCSEL的发展和应用现状,探讨了VCSEL在不同领域中的应用范围并指出了VCSEL的发展前景.     

6 μm vertical cavity surface emitting laser based on IV-VIsemiconductor compounds

An optically-pumped lead salt-based vertical cavity surface emitting laser is presented. The laser structure grown by molecular-beam epitaxy consists of a Pb_0.99Eu_0.01Te/PbTe λ/2 microcavity with Pb_0.99Eu_0.01Te/Pb_0.94Eu_0.06 Te Bragg mirrors. Stimulated emission was observed at 6073 nm below 25 K     

Room temperature continuous wave operation of red vertical cavity surface emitting laser diodes

The first room temperature (23 degrees C) continuous wave visible vertical cavity surface emitting laser diodes are reported. Annular contact devices with a 5 mu m optical aperture in a 15 mu m diameter mesa emit at 670.4 nm with a threshold current of 5 mA at 2.4 V. Devices with 20-60 mu m diameter mesas operate continuous wave below -13 degrees C.<>     

双面键合长波长垂直腔面发射激光器的制备与分析

研制了双面键合长波长垂直腔面发射激光器(VCSEL),有效克服了传统外延生长方法存在的诸多难题通过对布拉格反射镜、有源区和光学腔的设计,结合键合技术进行工艺设计,于国内首次研制出双面键合长波长VCSEL,并分别采用光泵浦和电泵浦对其进行了测试与分析,测试结果表明结构及工艺设计是合理的,两次键合后的界面可以承受腐蚀、剥离、氧化等后工艺,且键合界面光、电性能良好,未对激光器性质造成明显的不良影响,器件激射波长约为1 273.6 nm,脉冲条件下表现出动态单纵模特性,在仪器测试范围内,20 μm尺寸的器件常温连续工作条件下的最大输出功率为0.16 mW.但P-I曲线的扭折说明器件仍旧存在着较大的热、电阻,需在后续的材料生长及键合技术中进一步优化.     

Optically pumped blue-green vertical cavity surface emitting lasers

Optically pumped vertical cavity laser operation up to T=260K has been achieved in the 480-500 nm-wavelength range in ZnCdSe-ZnSSe-ZnMgSSe pseudomorphic separate confinement heterostructures, containing three active quantum well layers and dielectric high reflectivity mirrors     

Coupled-defect photonic crystal vertical cavity surface emitting lasers

Photonic crystal patterns containing two defects were fabricated within a large gain area in vertical cavity surface emitting lasers. By designing effective refractive index changes in the region between the defects through cavity shifts caused by photonic crystals, it was possible to coherently couple laser light output from the defects. This enables a novel way to fabricate coherently coupled laser arrays.     

Two-dimensional surface emitting distributed feedback laser arrays

The demonstration of two-dimensional arrays of surface-emitting distributed feedback lasers is reported. A 30-element array is shown to produce up to 6.8 W of pulsed output power. A 27-element array bonded on a silicon microchannel water-cooled heat sink is shown to produce as much as 3 W of continuous-wave output power. The high continuous wave power is possible due to the low thermal resistance in the p-side down design of the surface-emitting distributed feedback lasers and effective heat extraction by a silicon microchannel heat sink     

Single fundamental mode photonic crystal vertical cavity surface emitting laser with 9 GHz bandwidth

A record 9 GHz small signal modulation in a single fundamental mode photonic crystal vertical cavity surface emitting laser is demonstrated for the first time. The device is designed by incorporating etched photonic crystal holes in the top distributed Bragg reflector for optical confinement. Emission spectra measured during small signal modulation confirms single fundamental mode operation.