共查询到20条相似文献,搜索用时 0 毫秒
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Resist profiles in electron beam exposed PMMA have been simulated before and after proximity exposure compensation (correction) for isolated and closely spaced line patterns. Edge slope of the resist profiles obtained in the two cases (before and after proximity exposure compensation) indicate the effectiveness of the compensation technique. Along with the edge slopes the line width variations are also determined. 相似文献
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Device and interconnect electrical failures often occur in the form of short or open circuits which produce hot or cold spots under voltage bias. With the minimum device feature size shrinking to 0.25 μm and less, it is impossible to locate the exact position of defects by traditional thermal or optical techniques such as infra-red emission thermometry, liquid crystals or optical beam induced current. We have used a temperature-sensing probe in an atomic force microscope to locate a hot spot created by a short-circuit defect between the gate and the drain of a Si MOSFET with a spatial resolution of about 0.5 μm. The technique has the potential to produce spatial resolutions in the range of 0.05 μm and efforts are underway to reach this goal 相似文献
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Characteristics of local nanolithography on oxidative titanium dots and wires were studied using an amplitude modulation atomic force microscopy in the non-contact mode. Nanolithographic experiments were conducted to investigate the influence that different experimental parameters had on the height, the width, the growth rate, the morphology, and the composition of the nanostructures using Auger electron spectroscopy. The results indicate that anodization time, applied voltage, and tip-sample distance are proportional to the heights and widths of the dots. When the tip-sample distance was too close during continued anodization, concave dots appeared because the oxide that enclosed the tip. Carbon nanotube probe fabricated dots are also presented and compared. 相似文献
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CSPM 930b型多功能扫描探针显微镜经常需要进行手动激光光路调整。该仪器使用说明书[1] 介绍的调整方法可操作性差、手续繁琐、过程冗长 ,且难以判断激光束是否准确照射到微悬臂针尖背面的镀金层上 ,往往造成误判而导致微悬臂针尖被撞断裂。而且 ,按照原有方法操作者需要长时间全神贯注观察激光斑 ,使用者眼睛极易疲劳甚至造成损伤。笔者使用该仪器过程中 ,对光路调整方法进行了大量试验 ,摸索出了一套操作方便 ,容易准确判断针尖位置的有效方法。现总结交流如下。调整方法CSPM 930b扫描探针显微镜AFM部分激光光路如图 1所示。… 相似文献
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Yoshino T Sotome I Ohtani T Isobe S Oshita S Maekawa T 《Journal of electron microscopy》2000,49(3):483-486
Barley cells cut from a sprout were exposed to either air or high-pressure xenon gas for 3 days and the surface of those cells was observed by atomic force microscopy (AFM) to examine the effect of the gas treatment. This method enabled the direct observation of the fresh surface of the barley cells in solution at high resolution. The cuticle layer was preserved on the primary cell wall of 0.48 MPa xenon gas-treated barley cells, while air-treated barley cells lost the cuticle layer from the primary cell wall. These findings indicate that the high-pressure xenon gas treatment is effective to preserve the cuticle layer attached to the primary cell wall. AFM is a powerful tool for the observation of the surface structure of living plant cells in solution. 相似文献
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Watari F 《Journal of electron microscopy》1999,48(5):537-544
Atomic force microscopy was applied to the in-situ observation of the etching process of human teeth by acid agents. The change of surface morphology was observed consecutively before and during etching for the same area in the same specimen. The course of the etching process in enamel from dissolution of smear layer just after injection of acid agent, appearance of enamel prisms and progress of demineralization were quantitatively analysed for three fundamental acid agents of 2% phosphoric acid, 10% citric acid and 10% polyacrylic acid. Then the depth profile, etching amount, etching rate and thickness of smear layer were evaluated. Observation by scanning electron microscopy was also done and compared with the results by atomic force microscopy. 相似文献
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原子力显微镜( AFM)广泛应用于纳米尺度的成像和操纵,其较低的扫描速度严重影响了测试的效率。为此,许多研究人员通过设计先进的Z向控制算法改善系统的响应速度,达到提高扫描速度的目的,而先进的控制算法的实现首先需要对AFM的Z向反馈系统进行建模。为此,本文提出一种简单准确的系统辨识方法,通过对系统输入输出数据的分析,得到AFM的Z向反馈系统模型,并利用该模型验证先进控制算法的控制性能。实验表明该方法能为先进控制算法的设计和实现建立有效的仿真模型。 相似文献
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《Microelectronic Engineering》2007,84(5-8):1071-1074
Need for inorganic electron beam resist with higher sensitivity and resolution is indisputable. We have developed such a resist that also shows lower line edge roughness. It is pre-baked at 300 °C. By using 4 kV EB we have delineated 40 nm lines pattern and honeycomb structure Photonic crystal pattern. 相似文献
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D. R. S. Cumming S. Thoms J. M. R. Weaver S. P. Beaumont 《Microelectronic Engineering》1996,30(1-4):423-425
We demonstrate the fabrication of sub — 5 nm NiCr wires using conventional 100 kV electron beam lithography and PMMA resist technology. The wires are short, and widen to continuous 20 nm wires at either end. The ultra high resolution is achieved using a novel exposure technique. These wires are believed to be the smallest features yet made using this technology. 相似文献
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This paper presents a robust Cellular Automata model which predicts the two dimensional development profile as a function of development time, exposure dose and electron beam resist type.The main advantage of CA model is that they exhibit high efficiency and accuracy when handling arbitrarily complex system. In the CA method, A resist is represented by an array of discrete cells that reside in a crystalline lattice. Development of the resist is represented by removal and of individual cell according to development rules. During development, the decision to remove or retain a particular cell is based on the link status of its lattice neighbors according to cell-removal rules, The link status is categorized by number of neighboring cells and their relative positions. The modeling approach also uses Monte-Carlo simulation of electron scattering and energy dissipation and a simple development rate versus dose model for the resist. An absolute quantitative evaluation of the simulation accuracy is made based on resist exposure-development measurement and comparisons with SEM micrographs of experimental profiles of PMMA, SAL601 and ZEP520.The comparisons show good quantitative agreement and indicate the model based on CA can be used as a quantitative processing aid. Simulation results illustrate the importance of resist, beam and dose. 相似文献