共查询到20条相似文献,搜索用时 62 毫秒
1.
2.
Resist profiles in electron beam exposed PMMA have been simulated before and after proximity exposure compensation (correction) for isolated and closely spaced line patterns. Edge slope of the resist profiles obtained in the two cases (before and after proximity exposure compensation) indicate the effectiveness of the compensation technique. Along with the edge slopes the line width variations are also determined. 相似文献
3.
Device and interconnect electrical failures often occur in the form of short or open circuits which produce hot or cold spots under voltage bias. With the minimum device feature size shrinking to 0.25 μm and less, it is impossible to locate the exact position of defects by traditional thermal or optical techniques such as infra-red emission thermometry, liquid crystals or optical beam induced current. We have used a temperature-sensing probe in an atomic force microscope to locate a hot spot created by a short-circuit defect between the gate and the drain of a Si MOSFET with a spatial resolution of about 0.5 μm. The technique has the potential to produce spatial resolutions in the range of 0.05 μm and efforts are underway to reach this goal 相似文献
4.
Ultra-thin (20-100nm) polymethylmethacrylate(PMMA) films prepared by Langmuir-Blodgett techniques have been explored as high resolution electron beam resists. A Hitachi S-450 Scanning Electron Microscope (SEM) has been refitted for a high resolution electron beam exposure system. The lithographic properties and exposure conditions of LB PMMA films were investigated. 0.15μm lines-and-spaces patterns were achieved by using the SEM as the exposure tool. The results demonstrate that the etch resistance of such films is sufficiently good to allow patterning of a 20 nm aluminum film suitable for mask fabrication. 相似文献
5.
6.
Characteristics of local nanolithography on oxidative titanium dots and wires were studied using an amplitude modulation atomic force microscopy in the non-contact mode. Nanolithographic experiments were conducted to investigate the influence that different experimental parameters had on the height, the width, the growth rate, the morphology, and the composition of the nanostructures using Auger electron spectroscopy. The results indicate that anodization time, applied voltage, and tip-sample distance are proportional to the heights and widths of the dots. When the tip-sample distance was too close during continued anodization, concave dots appeared because the oxide that enclosed the tip. Carbon nanotube probe fabricated dots are also presented and compared. 相似文献
7.
CSPM 930b型多功能扫描探针显微镜经常需要进行手动激光光路调整。该仪器使用说明书[1] 介绍的调整方法可操作性差、手续繁琐、过程冗长 ,且难以判断激光束是否准确照射到微悬臂针尖背面的镀金层上 ,往往造成误判而导致微悬臂针尖被撞断裂。而且 ,按照原有方法操作者需要长时间全神贯注观察激光斑 ,使用者眼睛极易疲劳甚至造成损伤。笔者使用该仪器过程中 ,对光路调整方法进行了大量试验 ,摸索出了一套操作方便 ,容易准确判断针尖位置的有效方法。现总结交流如下。调整方法CSPM 930b扫描探针显微镜AFM部分激光光路如图 1所示。… 相似文献
8.
《Mechatronics》2022
Contact mode is a versatile and widely used technique for imaging samples using the Atomic Force Microscope (AFM). When contact mode imaging is performed in constant-height mode, it enables linear and faster response but leads to uncontrolled tip-sample forces. Here, a control strategy based on magnetic actuation is proposed to achieve high-bandwidth control of the tip-sample forces in constant-height contact mode AFM. A magnetic particle attached to the AFM probe is actuated by an external solenoid and employed for force regulation. A quasi-static model has been proposed and employed to develop the control strategy. Likewise, the contact natural-frequency, which decides the limit of achievable speed, has been shown to be significantly higher relative to the free probe and to be relatively insensitive to the particle size. Subsequently, a setup is developed to validate the control strategy and demonstrate reduction of tip-sample force variation by over a factor of 12 compared to conventional constant-height mode operation. Likewise, in comparison with conventional contact mode AFM, an improvement of linearity by over a factor of 9 and improvement in response speed by a factor of 100 have been demonstrated while imaging hard samples. The system has been shown to image topography at speeds of 2.44 frames per second while regulating the interaction force. Finally, the stiffness of a sample has also been characterized using the developed system and simultaneous estimation of topography has also been demonstrated. They are shown to agree well with theoretical expectations. 相似文献
9.
10.
Yoshino T Sotome I Ohtani T Isobe S Oshita S Maekawa T 《Journal of electron microscopy》2000,49(3):483-486
Barley cells cut from a sprout were exposed to either air or high-pressure xenon gas for 3 days and the surface of those cells was observed by atomic force microscopy (AFM) to examine the effect of the gas treatment. This method enabled the direct observation of the fresh surface of the barley cells in solution at high resolution. The cuticle layer was preserved on the primary cell wall of 0.48 MPa xenon gas-treated barley cells, while air-treated barley cells lost the cuticle layer from the primary cell wall. These findings indicate that the high-pressure xenon gas treatment is effective to preserve the cuticle layer attached to the primary cell wall. AFM is a powerful tool for the observation of the surface structure of living plant cells in solution. 相似文献
11.
12.
13.
14.
15.
16.
17.
提出和发展了一种激光光路跟踪型原子力显微镜(AFM)技术及系统。研制了新型AFM探头,设 计了与XY扫描器联动的跟踪透镜及扫描跟踪光路,实现激光束对微探针(微悬 臂)的XY扫描的实时跟踪;研 究设计了独特的反馈跟踪光路,既可实现微悬臂偏转量的精确检测,又可巧妙地消除因微探 针的Z向反馈运动 造成的干扰噪声。利用研发的AFM系统对多孔氧化铝纳米孔等具有不同横向与 纵向结构尺寸的微纳米样品进行了扫 描成像,得到了理想的实验结果,表明研发的系统具有优良的XY扫描跟踪特性 和Z向反馈跟踪性能。本文研发的 AFM系统原理新颖、方法巧妙、扫描成像性能好和分辨率高,克服了常规样品 扫描型AFM的局限性,能够以 微探针扫描的方式实现不同大小、不同重量的样品的AFM扫描成像,可望在微纳米技术领 域获得广泛应用。 相似文献
18.
《Microelectronic Engineering》1987,7(1):11-20
Multilayer resist optical lithography is transposed into trilevel resist electron beam lithography. A thin electron-sensitive multilayer resist is exposed in a dedicated scanning transmission electron microscope. The upper resist layer is chemically developed, the underlying layers are patterned by reactive ion etching. Very fine titanium lines (1 μm to 30 nm) are obtained after evaporation and lift-off process. 相似文献
19.
Watari F 《Journal of electron microscopy》1999,48(5):537-544
Atomic force microscopy was applied to the in-situ observation of the etching process of human teeth by acid agents. The change of surface morphology was observed consecutively before and during etching for the same area in the same specimen. The course of the etching process in enamel from dissolution of smear layer just after injection of acid agent, appearance of enamel prisms and progress of demineralization were quantitatively analysed for three fundamental acid agents of 2% phosphoric acid, 10% citric acid and 10% polyacrylic acid. Then the depth profile, etching amount, etching rate and thickness of smear layer were evaluated. Observation by scanning electron microscopy was also done and compared with the results by atomic force microscopy. 相似文献