Concurrent dual-band LNA for dual-system dual-band GNSS receiver

Two concurrent dual-band low-noise amplifiers (LNAs) for GNSS applications are presented. They adopted resistive load and LC resonator load, respectively. On-chip circuits are used for biasing the main amplifiers and active baluns are used for single-ended-to-differential conversions. Using the power-constrained simultaneous input and noise matching technique, the LNAs achieve input matching and noise optimization simultaneously at two bands. Implemented in SMIC 0.18 μm CMOS process, both LNAs consume less than 8 mA dc current with a power supply voltage of 1.8 V. The proposed LNA with resistive load exhibits measured gains of 13 and 11.5 dB, and noise figures of 1.58 and 3.1 dB at 1.217 and 1.568 GHz, respectively. The LC load LNA has measured gains of 16 and 14.8 dB, and noise figures of 2.2 and 2.35 dB at 1.217 and 1.568 GHz, respectively.     

K-band low-noise amplifiers using 0.18 /spl mu/m CMOS technology

Two K-Band low-noise amplifiers (LNAs) are designed and implemented in a standard 0.18 /spl mu/m CMOS technology. The 24 GHz LNA has demonstrated a 12.86 dB gain and a 5.6 dB noise figure (NF) at 23.5 GHz. The 26 GHz LNA achieves an 8.9 dB gain at the peak gain frequency of 25.7 GHz and a 6.93 dB NF at 25 GHz. The input referred third-order intercept point (IIP3) is >+2 dBm for both LNAs with a current consumption of 30 mA from a 1.8 V power supply. To our knowledge, the LNAs show the highest operation frequencies ever reported for LNAs in a standard CMOS process.     

A Compact, ESD-Protected, SiGe BiCMOS LNA for Ultra-Wideband Applications

Two 3.65-mW, ESD-protected, BiCMOS ultra-wideband low-noise amplifiers (LNAs) for operation up to 10 GHz are presented. These common-base LNAs achieve significant savings in die area over more widely used cascoded common-emitter LNAs because they do not use an LC input matching network. A design with a shunt peaked load achieves a high S₂₁ (17-19 dB) and low noise figure (NF) (4-5 dB) across the band. A resistively loaded design exhibits a lower S₂₁ (15-16 dB) and higher NF (4.5-6 dB), but also utilizes 20% less silicon area. Both LNAs achieve a 1.5 kV ESD protection level and an acceptable S₁₁ (<-10 dB) across the band. Current source noise reduction is critical in common base topologies. Therefore, detailed noise analyses of MOS- and HBT-based current sources are provided     

High-gain, V-band, low-noise MMIC amplifiers usingpseudomorphic MODFETs

State-of-the-art, 60-GHz, low-noise MMICs based on pseudomorphic modulation-doped FETs, with 0.25-μm×60-μm gates offset 0.3 μm from the source ohmic, are discussed. Single-state low-noise amplifiers (LNAs) exhibited minimum noise figures of 2.90 dB with 4.1 dB of associated gain at 59.25 GHz. Dual-state MMICs had minimum noise figures of 3.5 dB and 10.8 dB of associated gain at 58.50 GHz. Cascaded four-stage LNAs (two dual-stage MMICs) had minimum noise figures of 3.7 dB and over 20.7 dB of associated gain at 58.0 GHz. Finally, when biased for maximum gain, the four-stage amplifier exhibited over 30.4 dB of gain at 60.0 GHz     

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors' knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date.     

Highly Rugged 30 GHz GaN Low-Noise Amplifiers

GaN low-noise amplifiers (LNAs) operating at 27-31 GHz are presented in this letter. The monolithically integrated LNAs were fabricated using the process line of the Ferdinand-Braun-Institut. Noise figures of 3.7 to 3.9 dB were measured. The ruggedness of the LNAs was verified by noise measurements after stressing the LNA for up to 2 h with up to 33 dBm of input power. These conditions are among the most severe stress tests reported in literature. To the best of the authors knowledge, this is the first demonstration of a GaN LNA in this frequency region.     

1MHz～40GHz超宽带分布式低噪声放大器设计

为满足宽带系统中低噪声放大器(LNA)宽带的要求,采用0.15μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,设计了两款1 MHz^40 GHz的超宽带LNA,分别采用均匀分布式放大器结构及渐变分布式放大器结构,电路面积分别为1.8 mm×0.85 mm和1.8 mm×0.8 mm。电磁场仿真结果表明,1 MHz^40 GHz频率范围内,均匀分布式LNA增益为15.3 dB,增益平坦度为2 dB,噪声系数小于5.1 dB;渐变分布式LNA增益为14.16 dB,增益平坦度为1.74 dB,噪声系数小于3.9 dB。渐变分布式LNA较均匀分布式LNA,显著地改善了增益平坦度、噪声性能和群延时特性。     

Figure of merit for narrowband,wideband and multiband LNAs

In software defined radio, the same radio front end is used to accommodate different wireless standards operating in different frequency bands. The use of wideband or multiband low noise amplifiers (LNAs) is mandatory in such situations. There are several figures of merit (FoMs) proposed for narrowband LNAs. These FoMs are modified for wideband/multiband LNAs just by the inclusion of 3?dB bandwidth, and designers tend to use the one that favours their own design. In this article, a review of the existing FoMs for narrowband LNAs is presented. Based on this analysis, we propose two different FoMs for fair comparison of improvement in LNA parameters due to complementary metal oxide semiconductor (CMOS) technology advancement and circuit optimisation (irrespective of transistor technology), separately. The empirical technology scaling factor for gain, noise figure (NF), f _T and linearity is used to differentiate between these FoMs for different types of LNAs.     

110-120-GHz monolithic low-noise amplifiers

The authors discuss the development of 110-120-GHz monolithic low-noise amplifiers (LNAs) using 0.1-mm pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNAs have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The authors state that the small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band     

Burnout studies of X-band radar negative resistance transistor low noise amplifiers

GaAs FETs and HEMTs can be configured to give low noise, negative resistance microwave amplification. Such low noise amplifiers have the advantage of an inherent bypass path after device burnout. This feature is potentially useful in radar receiver applications. Test results for prototype LNAs are described, showing burnout energies comparable to those of conventional transmission mode amplifiers using similar devices. Bypass path losses after burnout are around 4 dB, approximately 20 dB less than for a failed transmission mode amplifier.<>     

A multi-mode multi-band RF receiver front-end for a TD-SCDMA/LTE/LTE-advanced in 0.18-μm CMOS process

正A fully integrated multi-mode multi-band directed-conversion radio frequency(RF) receiver front-end for a TD-SCDMA/LTE/LTE-advanced is presented.The front-end employs direct-conversion design,and consists of two differential tunable low noise amplifiers(LNA),a quadrature mixer,and two intermediate frequency(IF) amplifiers.The two independent tunable LNAs are used to cover all the four frequency bands,achieving sufficient low noise and high gain performance with low power consumption.Switched capacitor arrays perform a resonant frequency point calibration for the LNAs.The two LNAs are combined at the driver stage of the mixer,which employs a folded double balanced Gilbert structure,and utilizes PMOS transistors as local oscillator(LO) switches to reduce flicker noise.The front-end has three gain modes to obtain a higher dynamic range.Frequency band selection and mode of configuration is realized by an on-chip serial peripheral interface(SPI) module.The frontend is fabricated in a TSMC 0.18-μm RF CMOS process and occupies an area of 1.3 mm~2.The measured doublesideband (DSB) noise figure is below 3.5 dB and the conversion gain is over 43 dB at all of the frequency bands. The total current consumption is 31 mA from a 1.8-V supply.     

Low-noise amplifiers in wireless communications: state of the art,two new wideband all-active LNAs in SiGe-BiCMOS

The aim of this paper is three-fold. First, it introduces the low-noise amplifier, its relevance in modern wireless communications receivers and the performance expected of it. Then, it presents an exhaustive review of the existing topologies, presenting their advantages and shortcomings. And finally, it introduces a new class of LNAs, based on current conveyors, describing the founding principle and the performances of two new LNAs, one single-ended and the other differential. Both these new LNAs offer the following notable advantages over existent topologies: total absence of passive elements (and the smallest LNAs in their respective classes); wideband performance, with stable frequency responses from 0 to 3 GHz; easy gain control over wide ranges (0–20 dB). Comparisons with other topologies prove that the new class of LNA implementations greatly advances the state of the art. These amplifiers are ideally suited to today’s multi-band receivers.     

ESD-Protected Wideband CMOS LNAs Using Modified Resistive Feedback Techniques With Chip-on-Board Packaging

A novel modified resistive feedback structure for designing wideband low-noise amplifiers (LNAs) is proposed and demonstrated in this paper. Techniques including feedback through a source follower, an R–C feedback network, a gate peaking inductor inside the feedback loop, and neutralization capacitors are used. Bond-wire inductors and electrostatic devices (ESDs) are co-designed to improve the chip performance. Two LNAs, LNA1 and LNA2, were fabricated using a TSMC digital 90-nm CMOS technology. Both chips were tested on board using chip-on-board packages with ESD diodes added at the inputs and outputs. LNA1 achieves a 3-dB bandwidth of 9 GHz with 10 dB of power gain and a minimum noise figure (NF) of 4.2 dB. LNA2 achieves a 3-dB bandwidth of 3.2 GHz with 15.5 dB of power gain and a minimum NF of 1.76 dB. The two LNAs have third-order intermodulation intercept points of $-$8 and $-$9 dBm. Their power consumptions are 20 and 25 mW with a 1.2-V supply, respectively.      

微波毫米波宽带单片低噪声放大器

推导了反馈电路理论,利用0.25μmGaAs PHEMT工艺,研制了两种并联反馈单片低噪声放大器。第一种放大器的工作频带为6～18GHz,测得增益G≥21dB,带内增益波动ΔG≤±1.0dB,噪声系数NF典型值为2.0dB,输入驻波VSWRin≤1.5,输出驻波VSWRout≤2.0,1分贝压缩点输出功率P1dB≥11dBm。第二种放大器的工作频带为26～40GHz,测得增益G≥17dB,噪声系数NF约为2.0dB,输入、输出驻波VSWR≤2.5,1分贝压缩点输出功率P1dB≥10dBm。两种电路的测试结果验证了设计的正确性。     

A modified architecture used for input matching in CMOS low-noise amplifiers

An architecture used for input matching in CMOS low-noise amplifiers (LNAs) is investigated in this paper. In the proposed architecture, gate and source inductors, which are essential in the traditional source inductive degeneration CMOS LNAs, are either reduced or removed. The architecture is finally verified by a narrow-band LNA and a wide-band LNA operating at 2.4-2.5 and 5.1-5.9 GHz, respectively. The narrow-band LNA has measured power gain of 24-dB, noise figure (NF) of 2.6-2.8 dB, and power consumption of 15 mW. The wide-band LNA provides 22.6-24.6-dB power gain and 2.85-3.5-dB NF while drawing 6 mA current from a 1.5-V voltage supply. Compared with their traditional counterparts, the proposed LNAs consume less chip area and present better gain performance.     

Reconfigurable SiGe Low-Noise Amplifiers With Variable Miller Capacitance

A new input matching method making use of shunt-shunt feedback capacitance is introduced. Based on the new input matching method, reconfigurable SiGe low-noise amplifiers (LNAs) by varying shunt-shunt feedback capacitance are proposed. Two approaches are used to vary the shunt-shunt feedback capacitance. One approach is to switch between two different bias currents while the other is to use a series combination of a switch and a capacitor. Miniaturized fully monolithic reconfigurable SiGe LNAs without emitter degenerative inductors were realized by the above two approaches. The reconfigurable SiGe LNA achieved by switching bias currents only occupies a very small area of 355 mumtimes155 mum, excluding measurement pads. This LNA achieves an input return losses (S₁₁) of -27.6 dB, a voltage gain (A _v) of 19.8 dB, and a noise figure (NF) of 3.18 dB for 2.4-GHz band when biased at a current of 3.8 mA and can be reconfigured to obtain A_v=20.4/20.3 dB, S₁₁=-47.1/-24.6 dB and NF=3.42/3.21 dB for 5.2/5.7-GHz band when bias current is switched to 3 mA. In addition, a 2.4/4.9/5.2/5.7-GHz reconfigurable SiGe LNAs for WLAN applications, whose variable shunt-shunt feedback capacitance is controlled by a switch and a capacitor, was also realized     

Development of Integrated Broad-Band CMOS Low-Noise Amplifiers

This paper presents a systematic design methodology for broad-band CMOS low-noise amplifiers (LNAs). The feedback technique is proposed to attain a better design tradeoff between gain and noise. The network synthesis is adopted for the implementation of broad-band matching networks. The sloped interstage matching is used for gain compensation. A fully integrated ultra-wide-band 0.18-mum CMOS LNA is developed following the design methodology. The measured noise figure is lower than 3.8 dB from 3 to 7.5 GHz, resulting in the excellent average noise figure of 3.48 dB. Operated on a 1.8-V supply, the LNA delivers 19.1-dB power gain and dissipates 32 mW of power. The gain-bandwidth product of the UWB LNA reaches 358 GHz, the record number for the 0.18-m CMOS broad-band amplifiers. The total chip size of the CMOS UWB LNA is 1.37 times 1.19 mm².     

Millimeter-wave low-noise and high-power metamorphic HEMTamplifiers and devices on GaAs substrates

This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise figure with 11.8 dB of associated gain at 26 GHz. Using this MHEMT technology, two and three-stage Ka-band low-noise amplifiers (LNAs) have demonstrated <1.4-dB noise figure with 16 dB of gain and <1.7 with 26 dB of gain, respectively. The 32% In MHEMT device has overcome the <3.5-V drain bias limitation of other MHEMT power devices, showing a power density of 650 mW/mm at 35 GHz, with V_ds=6 V     

A power-constrained design strategy for CMOS tuned low noise amplifiers

This paper presents a design methodology for tuned low noise amplifiers (LNAs), based on the minimization of the noise figure for a given power consumption. Our proposed design strategy is demonstrated through the design of a 2.4 GHz LNA. Simulation results show that the amplifier draws 5 mA from a 3.3 V supply voltage and features a 1.7 dB noise figure, while keeping the input/output impedance matched to 50 Ω. The circuit achieves a gain of 11dB and a 1dB compression point of about −5 dB m. Custom ESD structures that do not degrade excessively the LNA performance are used for protection. The chip area (excluding the bonding pads) is approximately 0.3 × 0.3 mm².     

A small signal coupling model for predicting the coupling between LNAs

A small signal coupling model is developed to analyze the coupling between two LNAs. The mutual inductance between the adjacent on-chip inductors is considered responsible for this coupling. A set of formulas have been derived to quantitatively predict the coupling effects. Based on our analysis, a quick estimation can be made to see which pair of inductors plays a key role in evaluating the coupling between the LNAs. Source inductors of two LNAs are placed closely while the load inductors are far apart according to the analysis. To validate the proposed theory, two 2 GHz LNAs are fabricated. The LNAs have a peak gain of 18 dB and NF of 1.4 dB. The coupling between the LNAs is -30 dB.