不同周期数GDC/YSZ多层电解质薄膜的电学性能与结构稳定性

利用反应磁控溅射方法在蓝宝石单晶衬底上制备了调制周期相同、周期数不同的GDC/YSZ纳米多层薄膜,采用X射线衍射、原子力显微镜对薄膜结构、粗糙度、生长形貌进行了表征,利用交流阻抗谱仪测试了多层薄膜不同温度下的电学性能。结果表明衬底上首层薄膜是整个多层膜的生长模板,首先沉积GDC时多层膜呈无规则生长而首先沉积YSZ时多层膜为（111）织构;GDC/YSZ多层膜的生长是一个逐渐粗糙化的过程,随着薄膜厚度的增大（周期数的增多）,多层膜粗糙度与晶粒尺寸增大;随着周期数的增多,多层膜电导率逐渐增大,但电导活化能基本保持不变（约1.3eV）;在500～800℃下退火,多层膜结构稳定,但由于薄膜晶粒长大,导致其电导率小幅降低（降低百分比〈5%）。     

YSZ/STO/YSZ-STO超晶格电解质薄膜低温电学特性

采用脉冲激光沉积法,在单侧抛光的STO基底上制备YSZ/STO/YSZ超晶格薄膜。利用X射线衍射、扫描电镜和射频阻抗/材料分析仪对多层膜的物相结构、表面形貌以及电学特性等进行表征。实验结果发现,YSZ/STO/YSZ超晶格薄膜在300~500℃之间,其电导活化能最小值为0.76 e V,在300℃时测得的电导率比体材料的电导率提高了三个数量级。     

高度（100）取向PLT/PZT多层铁电薄膜的制备与性能研究

利用射频磁控溅射技术，以PbOx为过渡层，在Pt（111）/Ti/SiO2/Si（100）衬底上，采用原位溅射技术制备了高度（100）取向的[（Pb0.90La0.10）Ti0.975O3/Pb（Zr0.20Ti0.80）O3]n（n=1，2）{筒记为[PLT/PZT]。）多层铁电薄膜，研究了层数对多层铁电薄膜介电性能和铁电性能的影响。研究得出，（100）取向的PbOx，过渡层导致了[PLT/PZT]。多层铁电薄膜的（100）择优取向；高度（100）择优取向的[PLT/PZT]2薄膜具有更大的剩余极（2Pr=31.45μC/cm）和更好的“蝴蝶”状C-V曲线。这些研究结果表明，所制备的（100）取向的[PLT/PZT]2多层铁电薄膜具有优良的铁电性能。     

多弧离子镀制备TiN/TiAlN多层薄膜表面形貌与成分研究

采用多弧离子镀技术在高速钢基体上制备了TiN/TiAlN多层薄膜,用扫描电镜及能谱仪对膜层表面形貌和成分进行了观察与分析,结果表明:随钛靶电流的增大,小液滴的尺寸不仅增大,而且形状更不规则,而无液滴处的Al/Ti原子比呈递减规律;随基体偏压的降低,小液滴有减少的趋势,但这一趋势并不明显,而无液滴采集点的Al/Ti原子比也呈递减规律;基体偏压和钛靶电流对较大尺寸的液滴的影响不大。     

调制结构对TiN/ZrN纳米多层膜的表面形貌、生长行为及力学性能的影响

利用射频反应磁控溅射方法,设计并制备了一系列不同调制周期的TiN/ZrN纳米多层膜.利用原子力显微镜、X射线衍射仪和纳米压痕仪对多层膜的表面形貌、微观结构和力学性能进行了系统表征.研究结果表明调制结构影响着薄膜的择优生长取向、沉积速率和表面形貌;在调制周期为7nm～26nm的范围内,随调制周期的增加,TiN/ZrN多层膜的织构取向有从(100)面向(111)面转变的趋势;TiN和ZrN层的沉积速率随调制周期的变化而变化.在调制周期为15nm左右时,表面粗糙度最小,减小和增加调制周期均导致粗糙度的增加.力学性能分析表明TiN/ZrN多层膜的硬度和弹性模量均高于单一TiN和ZrN的硬度和弹性模量,且随着调制周期的减小有逐渐增加的趋势.此外,根据调制结构和力学性能的分析结果,讨论了TiN/ZrN纳米多层膜的硬化机制.     

调制比对C/C多层膜结构及性能的影响

考察了C(硬)/C(软)调制比对多层膜结构和性能的影响。采用磁过滤直流阴极真空弧源沉积技术制备了C/C多层膜,通过Raman光谱对多层膜的结构进行了表征;用硬度计和销盘式摩擦磨损试验机测试了多层膜的硬度及摩擦学性能。结果表明:所制备的多层膜呈现类金刚石结构并具有良好的耐磨性,其摩擦系数均小于0.15;随多层膜中软膜比例的增大,薄膜中sp2簇的数量逐渐增多,薄膜显维硬度呈现下降趋势,多层膜的耐磨性能下降。     

TiN/TiCN多层调制结构薄膜的耐蚀性

多弧离子镀和磁控溅射制备薄膜各有优缺点,将2种技术复合制膜的研究还少有报道.采用多弧离子镀和磁控溅射复合技术在304不锈钢基体表面制备了TiN单层和TiN/TiCN多层膜,采用扫描电镜、X射线衍射仪并结合电化学测试等着重研究了不同调制周期下薄膜组织结构与耐腐蚀性能的变化规律.结果表明:所制备的TiN/TiCN多层膜表面平整、致密,随着调制周期的减小,TiN/TiCN多层膜发生生长取向的转变,且具有(111)晶面生长织构;TiN/TiCN多层膜在3.5 ％NaC1溶液中的抗腐蚀能力优于基体和单层TiN薄膜,随着多层膜调制周期的减小,其抗腐蚀性逐渐增强,在λ =0.150 μm时,多层膜的自腐蚀电流密度和极化电阻分别为0.106 7μA/cm2和679.700 kΩ·cm2,腐蚀速率下降到最低,具有良好的耐腐蚀性.     

TiN/Ti多层膜调制比对摩擦磨损行为影响的研究

考察了TiN/Ti多层膜调制比对其摩擦磨损行为的影响. 采用磁过滤阴极弧沉积的方法制备了具有不同调制比的TiN/Ti多层膜, 用扫描电镜和透射电镜对其层状结构及子层结构进行了观察和分析. 用纳米压痕和SRV摩擦磨损试验的方法, 对多层膜进行了纳米硬度和弹性模量测试以及摩擦磨损实验. 结果表明, 所制备的TiN/Ti多层膜层状结构清晰, 与基底结合良好, 调制比对多层膜的硬度和磨损特性影响较大, 而对摩擦系数的影响却不明显. 结合实验结果, 讨论了硬度与弹性模量的比值(H/E值)对TiN/Ti多层膜耐磨性的影响.     

衬底温度对Sn掺杂ZnO薄膜结构、电学和光学性能的影响

采用射频磁控溅射技术在石英衬底上制备了掺杂浓度为0.5％(原子分数)的ZnO∶Sn(TZO)薄膜,研究了不同衬底温度下薄膜的结构、形貌、电学和光学的性能.研究发现,TZO薄膜沿着C轴择优生长,在400℃时结晶度最好,最低电阻率为2.619×10-2Ω·cm,在可见光范围内具有较好的透光率.     

脉冲偏压幅值对TiN／TiAlN多层薄膜微观结构和性能的影响

采用电弧离子镀的方法,通过改变脉冲偏压幅值在M2高速钢表面制备了TiN／TiAlN多层薄膜,研究了脉冲电压幅值TiN／TiAlN多层薄膜微观结构和性能的变化。随着脉冲偏压幅值的增加,薄膜表面的大颗粒数目明显减少。EDX结果表明,脉冲偏压幅值的增加还引起Al／Ti原子比的降低。TiN／TiAlN多层薄膜主要以（111）晶...     

Influence of modulation ratio on the structure and mechanical properties of TiB2/TiAlN multilayered coatings

TiB₂/TiAlN multilayered coatings with various modulation ratios (t_TiB2:t_TiAlN) were grown using radio-frequency magnetron sputtering at room temperature. Nanoindentation, tester for material surface properties, and XRD were used to investigate the influence of modulation ratio on microstructure and properties of the multilayers. All multilayers showed improved mechanical properties, compared with the average value of the monolithic TiB₂ and TiAlN coatings. The multilayer with modulation ratio of 5:2 displayed the highest hardness (36 GPa) and longest time to crack during wear. A marked layer structure with the strong mixture of TiAlN (111), AlN (111), and TiB₂ (001) textures with smaller grain sizes was responsible for the enhanced hardness.     

调制周期对ZrB_2/WNx纳米多层膜的机械性能和结构的影响

本文利用高真空离子束辅助沉积系统(IBAD)在室温下制备了ZrB2、WNx和一系列ZrB2/WNx纳米多层膜,利用XRD、SEM、XP-2台阶仪、纳米力学测试系统表征了薄膜的微结构和机械性能,分析了调制周期对薄膜结构与机械性能的影响。结果表明:ZrB2具有典型的六角相及WNx为六方与立方混合相结构,ZrB2/WNx的多层膜则呈现多晶结构。所有多层膜的纳米硬度与弹性模量值都高于两种个体单层膜材料值。当调制周期Λ=9.6 nm,轰击能量为200 eV时,ZrB2/WNx的多层膜显示出最高的硬度(30.2 GPa)和弹性模量,内应力和划痕测试等机械性能也取得较好的结果。     

Influence of Zn doping on electrical and optical properties of multilayered tin oxide thin films

In this study, the electrical and optical properties of Zn doped tin oxide films prepared using sol-gel spin coating process have been investigated. The SnO² : Zn multi-coating films were deposited at optimum deposition conditions using a hydroalcoholic solution consisting of stannous chloride and zinc chloride. Films with Zn doping levels from 0–10 wt% in solution are developed. The results of electrical measurements indicate that the sheet resistance of the deposited films increases with increasing Zn doping concentration and several superimposed coatings are necessary to reach expected low sheet resistance. Films with three coatings show minimum sheet resistance of 1–479 kΩ/ in the case of undoped SnO₂ and 77 kΩ/ for 5 wt% Zn doped SnO₂ when coated on glass substrate. In the case of single layer SnO₂ film, absorption edge is 3.57 eV and when doped with Zn absorption edge shifts towards lower energies (longer wavelengths). The absorption edge lies in the range of 3.489-3.557 eV depending upon the Zn doping concentration. The direct and indirect transitions and their dependence on dopant concentration and number of coatings are presented.     

Influence of oxygen/argon pressure ratio on the morphology, optical and electrical properties of ITO thin films deposited at room temperature

Transparent conductive oxides (TCOs) such as indium tin oxide (ITO) thin films onto glass substrates are widely used as transparent and conductive electrodes for a variety of technological applications including flat panel displays, solar cells, smart windows, touch screens, etc.ITO films on glass and polycarbonate (PC) substrates were prepared at room temperature (RT) and at different PO₂. The films were characterized in terms of the surface roughness (δ), sheet resistance, the refractive index (n) and extinction coefficient (k). The free carrier density (n_c) and the carrier mobility (μ) of the ITO (In₂O₃:Sn) films were measured and studied. The n_c and μ values vary in different ratio of oxygen partial pressure (PO₂) of ITO deposition. The observed changes in the ITO film resistivity are due to the combined effect of different parameter values for n_c and μ. From AFM analysis and spectra calculations, the surface roughness values of the ITO films were studied and it was observed that the δ values were lower than 15 nm. The energy band gap E_g ranges from 3.26 eV to 3.66 eV as determined from the absorption spectrum. It was observed an increase on the energy band gap as the PO₂ decrease in the range of 20-2% PO₂. The Lorentz oscillator classical model has also been used to fit the ellipsometric spectra in order to obtain both refractive index n and extinction coefficient κ values.     

Effect of powder structure on microstructure and electrical properties of plasma-sprayed 4.5 mol% YSZ coating

Electrolyte coatings by atmospheric plasma spraying were prepared by 4.5 mol% ytrria-stabilized zirconia (YSZ) powders manufactured by agglomerate-sintered (A-S) and fusing-crashed (F-C) processes. Microstructure of the powders and the coatings were characterized using scanning electron microscopy. The electrical conductivity of the coatings was investigated using both impedance spectroscopy and DC methods. The results showed that the electrical conductivity of coating prepared with A-S powder was lower than that with F-C powder. It was found from the impedance analysis that both the grain and grain boundary resistances were large in the coating formed by A-S powder. This fact resulted from deposition of partially melting of spray particles. A model was proposed to explain the effect of powder structure and melting state on the coating microstructure and properties.     

Analysis of the alternating current properties of ionic conductors

A method of analysis of inclined semicircular complex impedance (Z) diagrams for ionic conductors has been developed on the basis of the concept of non-Debye behaviour of solid dielectrics. This approach replaces the rather arbitrary distribution of relaxation times by the physically much simpler concept of a frequency-independent ratio of energy lost per cycle to energy stored. This criterion of dielectric behaviour leads directly to complex admittance (Y) plots in the form of straight lines inclined to the vertical which then transform to inclined semicircles in Z. The use of Y diagrams gives better accuracy of representation and it is shown how this can be further enhanced by plotting log Y _i – log Y _r instead of the usual linear representation. Different parts of the graphs are assigned to bulk and barrier regions on the basis of the value of the dielectric permittivity and it is shown that a hitherto unrecognized physical process can manifest itself as a strong dispersion at frequencies intermediate between the high-frequency bulk response and the low-frequency barrier-dominated behaviour.     

晶体结构对化合物电学性质的影响

化合物的导电性包括电子(空穴)导电及离子导电两大部分.新材料的发展已将化合物的电学性质提到了急需研究的位置.随着对化合物电学性质研究的不断深入,发现了许多新现象,新性质和新材料,如氧化物高温超导体,稀土半导体,稀土巨磁阻材料等.这些都是电子(空穴)导电的实际应用.而由于新能源探索需适应保护环境的需要,传统的氧离子和质子导体成了人们的首选研究对象,以开发它们在燃料电池、氧分离膜,催化等方面的实际应用.由于不等价置换,价态变化及氧离子具有大的双电荷与阳离子基体的强相互作用及高迁移率,使得大多数的研究工作集中于化合物的结构畸变分析及精化,试图发现新的结构相或者新的电学材料.     

Preparation of YSZ/YDC and YSZ/GDC composite electrolytes by the tape casting and sol-gel dip-drawing coating method for low-temperature SOFC

The composite electrolytes for low-temperature solid oxide fuel cells were fabricated via coating the YSZ sol on tape-casted substrates of yttria doped ceria (YDC) and gadolinia doped ceria (GDC). The doped ceria substrates with 98% of relative density were prepared by the tape-casting method followed by the sintering at 1,500°C for 2 hours. The YSZ polymeric sol for dip-drawing coating was synthesized by the partial hydrolysis of Zr-n-butoxide. The optimum dip-drawing coating rate for obtaining pinhole and crack free YSZ film was 2 cm/min using YSZ polymeric sol with 1.13 mol/ of concentration. After 10 times coating on ceria substrates with YSZ followed by the heat-treatment at 1,400°C for 2 hours, the fully densified YSZ film with 2.0 m of thickness without pores, cracks, or chemical reactions could be obtained. The results of single cell tests shows that YSZ layer coated doped ceria composite electrolyte prepared by the sol-gel dip-drawing method has an superior single cell performance to YSZ electrolyte without dissociation of ceria substrate.     

Influence of praseodymium oxide/cobalt oxide ratio on microstructure and electrical properties of zinc oxide varistor ceramics

The microstructure and electrical properties of varistor ceramics, which are composed of (99.5–x–y)ZnO+xPr₆O₁₁+yCoO+0.5Dy₂O₃ system, were investigated with Pr₆O₁₁/CoO mole ratio (x/y=0.5/0.5, 0.5/1.0, 1.0/0.5, 1.0/1.0) and sintering temperature. The density of varistor ceramics with Pr₆O₁₁=1.0 was almost constant with sintering temperature, whereas it was increased noticeably in Pr₆O₁₁=0.5. Increasing Pr₆O₁₁ content enhanced the densification for any CoO content and the density was greatly affected not by CoO content but by Pr₆O₁₁ content. The varistor ceramics with Pr₆O₁₁/CoO=0.5/1.0 exhibited a higher nonlinearity than any other composition ratios. In particular, the varistor ceramics sintered at 1350 °C. exhibited the best electrical properties, with nonlinear exponent of 37.8, leakage current of 7.6 μA, and dissipation factor of 0.059. It was found that Pr₆O₁₁/CoO ratio greatly affects various characteristics of varistor ceramics.