用AES／XPS对异质结材料的研究

用俄歇电子能谱（ＡＥＳ）和Ｘ射线光电子能谱（ＸＰＳ）结合氩离子溅射深度剖析对一系列不可Ｘ值的ＡｌｘＧａ１－ｘＡｓ／ＧａＡｓ异质结材料中各主元素的分布及化学状态物相对含量的变化进行了分析，发现Ａｌ向表面偏析的现象及Ａｓ和Ａｌ的择优溅射问题，并对此进行了讨论。同时用ＸＰＳ法进行了Ａｌ的定量分析，并与光致发光法（ＰＬ）测得的ｘ值进行了对比，发现二者有非常好的线性关系。     

用XPS法研究硅基硫化锌薄膜

应用X射线光电子能谱(XPS)研究Si基ZnS:Cu,Er薄膜的化学元素组成、分布和价态,认为Cu元素只有少数部分进入晶格中替代Zn2 起激活剂的作用,Er元素在ZnS基质中分布不均匀,且会与氧结合.PL测试发现样品发绿光,主要发光峰出现劈裂,对研究薄膜中的杂质中心、实现Si基发光有参考意义.     

X射线光电子能谱技术及其应用

X射线光电子能谱技术已广泛地用来分析和研究各种电子材料和元器件的质量、表面污染、界面状态及失效物理等。为了让从事电子材料和元件科研及生产的工程技术人员了解这种分析技术,作者结合教学与科研工作的一些体会,对它的工作原理、仪器结构和具体应用等作一些简要介绍。     

化学气相沉积TiO2薄膜的XPS研究

通过XPS分析了TiO2薄膜的结构。薄膜是通过化学气相沉积的方法生长，有机源遇热发生分解，沉积在硅衬底上形成TiO2薄膜。XPS分析表明：所得TiO2薄膜含有Ti,C,O,Al,Si元素。各元素的电子结合能与理论值并无太大的偏移，说明通过化学气相沉积法制备的TiO2薄膜，纯度高，质量好，晶型为锐钛矿。     

在玻璃衬底上制作K~+离子交换掩埋波导的新工艺

本文报道用不同离子两步交换技术,在玻璃衬底上制作K~+离子交换掩埋波导的新工艺,它不要求施加外电场。用X射线能谱(XES)分析技术测试了K~+离子的浓度分布,证明所制出的样品是掩埋波导。     

用AES/XPS对异质结材料的研究

用俄歇电子能谱（ＡＥＳ）和ｘ射线光电子能谱（ＸＰＳ）结合氩离子溅射深度剖析对一系列不同ｘ值的ＡｌｘＧａ１－ｘＡｓ／ＧａＡｓ异质结材料中各主元素的分布及化学状态和相对含量的变化进行了分析，发现Ａｌ向表面偏析的现象及Ａｓ和Ａｌ的择优溅射问题，并对此进行了讨论。同时用ＸＰＳ法进行了Ａｌ的定量分析，并与光致发光法（ＰＬ）测得的ｘ值进行了对比，发现二者有非常好的线性关系     

PTCDA/ITO表面和界面的AFM和XPS分析

利用X射线光电子能谱(XPS)对苝四甲酸二酐[3,4,9,10-perylenetetracarboxylic dianhydride(PTCDA)]/铟锡氧化物(ITO)表面和界面进行了研究.用原子力显微镜(AFM)对PTCDA/ITO样品的表面形貌进行了分析.XPS表明,在原始表面的C1s精细谱存在两个主谱峰和一个伴峰,主谱峰分别由结合能为284.6eV的苝环中的C原子和结合能为288.7eV的酸酐基团中的C原子激发;而结合能为290.4eV的伴峰的存在,说明发生了来源于ITO膜中的氧对C原子的氧化现象.O原子在C=O键和C-O-C键的结合能分别为531.5和533.4eV.在界面处,C1s谱中较高结合能峰消失,且峰值向低结合能方向发生0.2eV的化学位移;O1s谱向低结合能方向发生1.5eV的化学位移.由此可以推断,在界面处PTCDA与ITO的结合是PTCDA中的苝环与ITO中的In空位的结合.AFM的结果显示,PTCDA薄膜为岛状结构,岛的直径约为100～300nm,表面起伏约为14nm.相邻两层PTC-DA分子由于存在离域大π键而交叠和PTCDA分子中的苝环与ITO的In空位的紧密结合是最终导致PTCDA岛状结构形成的原因.     

退火对硫化后的P+ 型InP表面性能的影响

文章采用光致发光（PL）测试和X射线光电能谱（XPS）测试相结合的方法,对硫化前后P＋型InP的PL光谱以及表面化学成分进行了分析,得到了退火对硫化过的InP表面性能的影响结果;同时得到了S在InP表面所成键的结构以及稳定性随温度的变化的情况.     

硫化镉薄膜的XPS研究

用XPS分析了CdS薄膜的结构。硫化镉薄膜是用化学沉积法制备的胶体颗粒，然后再通过真空蒸发法在平面玻璃上形成的多晶薄膜。XPS分析表明CdS薄膜中的Cd3d和S2p峰值均比块状CdS向高能方向偏移了10eV。这主要是由于表面效应所致。     

ZnO薄膜的XPS研究

利用等离子体增强型MOCVD设备,在C面蓝宝石上生长出了C轴取向的未退火、生长后一次退火和生长过程中多次退火的ZnO薄膜样品,并通过X光衍射和X光电子能谱对样品进行了表征,结果表明生长过程中多次退火的样品具有较高的质量,O/Zn原子比较大,且受空气中氧和水汽的影响最小.     

铜离子交换单步掩埋BK7玻璃波导的制备与表征

利用Cu离子交换技术制备了BK7玻璃平面光波导,在6328nm波长下,用棱镜耦合技术测量出所制备波导的有效折射率,利用反WKB方法计算并确定了平面光波导的折射率分布,通过对折射率分布进行函数拟合,发现离子交换后的样品折射率分布近似符合改进后的高斯分布,样品的折射率分布似乎是一个掩埋波导的折射率分布,求出所制备玻璃平面光波导在570℃的扩散系数De≈12133×10-14m2s。同时,对所制备波导进行了电子显微镜(EMS)和次级离子质谱(SIMS)测试,得到了铜离子在玻璃表面的浓度分布,从而证明了实验所得到的BK7玻璃平面光波导是掩埋波导。这种掩埋平面波导是由单步Cu离子交换技术得到的。     

XPS Analysis of Surface and Interface States for PTCDA/p-Si Heterojunction

The surface and interface of heterojunction (HJ) formed with organic semiconductor (3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and inorganic semiconductor p-Si were measured and analyzed by X-ray photoelectron spectroscopy(XPS).The results indicate that ,in PTCDA molecule, the binding energy(Eb) of C is 284.6eV and 288.3eV, corresponding to C of the perylene and Cof the anhydride, respectively, and the binding energy of O is 531.3 eV and 531.1eV, corresponding to C of C=O in the anhydrides and C of C-O-C, respectively.Moreover, PTCDA lost its anhydrides and only its perylenes were left in the HJ interface.     

XPS Investigation on Surface and Interface Electronic States of Alq3／ITO

The surface and interface electronic states of tris-(8-hydroxyquinoline)aluminum(Alq3)/indium-tin oxid(ITO)were measured and analyzed by X-ray photoelectron spectroscopy(XPS).The results indicated that, in Alq3 molecule,the binding energy(Eb)of Al atoms is 70.7eV and 75.1eV,corresponding to Al(O)and Al(Ⅲ）,respectively;The binding energy of C is 285.8eV,286.3eV,and 286.8eV,corresponding to C of C-C group,C-O,and C-N bond,respectively,N is the main peak locating at 401.0eV, corresponding to Natom of C-N=C.Oatoms mainly bond o H atom,with the binding energy of 533.2 eV.As the sputtering time of Ar^ ion bearn increases,Al2p,C1s,N1s,O1s,Ind3d5/2 and Sn3d5/2 peaks slightly shift towards lower binding energy,and Al2p,C1s and N1s peaks get weaker,which contributed to diffusing the oxygen,indium and tin in ITO into Alq3 layr.     

应用XPS研究碘化铯光阴极的热稳定性

本文应用XPS(X射线光电子能谱仪)研究了真空烘烤对碘化铯光阴极化学状态的影响。实验结果表明在高真空环境中,碘化铯光阴极在低于180℃的烘烤条件下即以缓慢的速率升华,但是,它的化学状态是稳定的。而在高于180℃的烘烤条件下,它的化学状态将发生变化。     

激光诱导银纳米颗粒薄膜和微结构

利用可见激光诱导化学沉积方法在玻璃基底上制备纳米银薄膜和微结构。玻璃样品池中装满柠檬酸钠和硝酸银的混合透明溶液,当一束可见连续激光正入射样品池一段时间后,在辐照区域的玻璃内壁上便可以形成一层光亮的银膜。银膜沉积的速度受到激光功率密度、激光波长、辐照时间以及混合溶液的浓度等条件的影响。利用X射线衍射、原子力显微镜和拉曼光谱仪等手段对制备的薄膜的成分、表面形貌和拉曼活性等性质进行了表征和分析。利用此方法制备的银膜具有良好的表面增强拉曼散射活性。同时,利用双光束干涉的方法在玻璃基底上诱导出不同周期的银纳米颗粒光栅。     

K -Na 离子交换1×32光功分器的设计

设计了玻璃基K+-Na+离子交换1×32级联Y分叉光功分器.由于采用了一种新型的器件结构形式,光功分器的长度得以缩短,当输出波导间距为127 μm、波导最小曲率半径为30 mm时,器件总长只有20 mm.为了提高器件的功分均匀性,对波导的泄漏模进行了控制,使一阶泄漏模的损耗速度达到32 dB/cm.为了提高波导与光纤的耦合效率,器件输入输出端进行了光斑尺寸变换,使光纤-波导的耦合损耗降低到0.26 dB.     

A Facile Strategy for Preparation of Fluorescent SWNT Complexes with High Quantum Yields Based on Ion Exchange

The fluorescent imidazolium salt (1,3‐bis(9‐anthracenylmethyl)imidazolium chloride, [bamim]Cl) has been grafted onto the surfaces of single‐walled carbon nanotubes (SWNTs) using an ion exchange strategy based on metathesis of the K⁺ ion in CO₂K derivatized SWNTs with [bamim]⁺. The resulting SWNT‐[bamim] complex has been characterized with high‐resolution transmission electron microscopy (HR‐TEM), X‐ray photoelectron spectroscopy (XPS), elemental mapping, and elemental linear profiles analysis. A blue light emission can be observed at 392, 414 and 438 nm for SWNT‐[bamim] upon being excited at 254 nm. The quantum yield (QY) of the SWNT‐[bamim] complex (0.40) is much higher than that of SWNT/[bamim]Cl (0.02), used as a control, and prepared using a π‐π stacking method, indicating that ion exchange is a far more effective strategy for retaining a high QY. Additionally, UV‐Vis‐NIR and Raman spectroscopy show that the SWNT‐[bamim] complex can maintain the one‐dimensional electronic states of SWNTs. Other imidazolium salts have also been successfully grafted onto SWNTs via the same strategy, indicating that the ion exchange process can serve as a universal strategy for the functionalization of SWNTs.     

Ion Exchange Induced Efficient N-Type Thermoelectrics in Solid-State

High-performance n-type solid-state ionic thermoelectrics (SS i-TEs) for low-grade heat harvesting are highly desired and challenging. Here, the design and synthesis of an efficient n-type mixed conductor via ion pair modulation is demonstrated, which consists of biguanide hydrochloride (MfmCl) and a poly(3,4-ethylenedioxythiophene) (PEDOT): poly(styrenesulfonate) (PSS) polymeric complex in a solid film. Theoretical calculations and nano/microstructure characterization reveal that the binding preference of ion pairs offers energetically favorable ion exchange in the matrix, which induces not only tightly bound Mfm PSS species but also favorable anion diffusion channels. Consequently, an enhanced ionic conductivity of 1.40 S m⁻¹ with a record highest negative thermopower of −46.97 mV K⁻¹ is achieved for the n-type mixed conductor thus far.     

离子辐照纳米Si3N4量子点的表面分析与蓝光增强机理研究

本文对Ｎ十离子辐照纳米氮化硅量子点的表面特性进行了测试、分析，对离子辐照后量子点蓝光发射显著增强这一现象给出了解释．ＦＴＩＲ测试发现，辐照使Ｓｉ－Ｎ键结合峰增强，说明辐照后Ｓｉ－Ｎ 键合数增加，而其它峰未发生变化．ＸＰＳ全谱表明，量子点中的氧主要集中在其表面，辐照使量子点表面的氧含量增加，进一步通过ＸＰＳ芯态能谱测试发现，辐照使表面的氧、硅由吸附态转化成结合态．我们认为ＳｉＯ２／Ｓｉ３Ｎ４界面中的激子模型可以解释量子点蓝光增强现象，界面层激子效应是蓝光发射增强效应产生的根源．     

Painting and Direct Writing of Silver Nanostructures on Phosphate Glass with Electron Beam Irradiation

Surfaces with silver nanostructures are useful, due to their potential to resonate strongly with visible light. This report demonstrates a process for the directed extraction of silver at the surface of a transparent superionic conductor. A focused electron beam incident on superionic AgIAgPO₃ glass results in localized negative charge deposition, which is neutralized by the electrochemical reduction of free silver ions. This process was characterized for beam energies ranging from 1 to 12 kV and primary beam fluence ranging from 50 pC μm^?2 to 35 nC μm^?2. For electron fluence less than 2.5 nC μm^?2 the process produces vibrant coloration of the glass which can be tuned throughout the entire visible spectrum. Fluence greater than 2.5 nC μm^?2 results in the controlled writing of bulk silver on the surface, with a minimum line width as small as 400 nm and narrow gaps as small as 50 nm. The high ionic conductivity of the substrate is shown to be a vital component to the process, allowing the wide range of colors to be produced along with the controlled, nondendritic growth of silver structures.