共查询到20条相似文献,搜索用时 31 毫秒
1.
《Electron Device Letters, IEEE》2009,30(5):460-462
2.
Kyoung Pyo Hong Kyung-Hoon Cho Young Hun Jeong Sahn Nahm Chong-Yun Kang Seok-Jin Yoon 《Electron Device Letters, IEEE》2008,29(4):334-337
A small crystalline phase was formed in the Bi1.5ZnNb1.5O7 (BZN) film grown at 300degC on TiN/SiO2/Si substrate using RF-magnetron sputtering. A 46-nm-thick BZN film exhibited a high capacitance density of 13.6 fF/mum2 at 100 kHz with a dielectric constant of 71, which did not change even in the gigahertz range (1-6 GHz). The quality factor was high, approximately 50, at 2.5 GHz. The leakage-current density was low, approximately 5.66 nA/cm2, at 2 V. The quadratic voltage and temperature coefficients of capacitance were approximately 631 ppm/V2 and 149 ppm/degC at 100 kHz, respectively. These results indicate that the BZN film grown on TiN substrate at 300degC can be a good candidate material for metal-insulator- metal capacitors. 相似文献
3.
Cheng C.H. Lin S.H. Jhou K.Y. Chen W.J. Chou C.P. Yeh F.S. Hu J. Hwang M. Arikado T. McAlister S.P. Chin A. 《Electron Device Letters, IEEE》2008,29(8):845-847
We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum2 and a leakage current of 3 times 10-8 (25degC) or 6 times 10-7 (125degC) A/cm2 at -1 V. This performance is due to the combined effects of 300degC nanocrystallized high-kappa TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies. 相似文献
4.
Hang Hu Chunxiang Zhu Lu Y.F. Li M.F. Byung Jin Cho Choi W.K. 《Electron Device Letters, IEEE》2002,23(9):514-516
Metal-insulator-metal (MIM) capacitors with a 56 nm thick HfO2 high-κ dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (~200°C). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO2 MIM capacitor can provide a higher capacitance density than Si3N4 MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2×10-9 A/cm2 at 3 V is achieved. All of these make the HfO 2 MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications 相似文献
5.
The dielectric properties of the amorphous BaSm2Ti4O12 (BSmT) film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300 degC exhibited a high capacitance density of 9.9 fF/mum2 at 100 kHz and a low leakage current density of 1.790 nA/cm2 at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V2 and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/degC at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor 相似文献
6.
《Electron Device Letters, IEEE》2008,29(6):557-560
In this letter, we report the fabrication and characterization of self-aligned inversion-type enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs). The In0.53Ga0.47As surface was passivated by atomic layer deposition of a 2.5-nm-thick AIN interfacial layer. In0.53Ga0.47As MOS capacitors showed an excellent frequency dispersion behavior. A maximum drive current of 18.5 muA/mum was obtained at a gate overdrive of 2 V for a MOSFET device with a gate length of 20 mum. An Ion/off ratio of 104, a positive threshold voltage of 0.15 V, and a subthreshold slope of ~165 mV/dec were extracted from the transfer characteristics. The interface-trap density is estimated to be ~7-8 times 1012 cm-2 ldr eV-1 from the subthreshold characteristics of the MOSFET. 相似文献
7.
We have investigated the electrical characteristics of Al2 O3 and AlTiOx MIM capacitors from the IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2 O3 and AlTiOx MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiOx MIM capacitor has very large capacitance reduction at increasing frequencies. In contrast, good device integrity has been obtained for the Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent 相似文献
8.
Veloso A. Yu H.Y. Chang S.Z. Adelmann C. Onsia B. Brus S. Demand M. Lauwers A. O'Sullivan B.J. Singanamalla R. Pourtois G. Lehnen P. Van Elshocht S. De Meyer K. Jurczak M. Absil P.P. Biesemans S. 《Electron Device Letters, IEEE》2007,28(11):980-983
This letter reports that the effective work function (eWF) of Ni-Fully Silicided (Ni-FUSI) devices with HfSiON gate dielectrics can be modulated toward the silicon conduction band-edge by deposition of an ultra-thin Dy2O3 cap layer on the host dielectric. The obtained eWF depends on the deposited cap layer thickness and the Ni-FUSI phase, with 10 Aring Dy2O3 cap resulting in DeltaeWF ap 400 meV and final eWF ap 4.08 eV for NiSi-FUSI. Dielectric intermixing occurs without impacting the VT uniformity, gate leakage, mobility, and reliability. Well-behaved short-channel devices ( Lg ~ 100 nm, SS ~ 70 mV/dec, and DIBL ~ 65 mV/V) are demonstrated for both HfSiON and [HfSiON/Dy2O3 cap (5 Aring)] devices with NiSi-FUSI gates, corresponding to a similar . This capping approach, when combined with Ni-silicide FUSI phase engineering, allows (n-p) values up to 800 meV, making it promising for low- CMOS. 相似文献
9.
Worhoff K. Bradley J.D.B. Ay F. Geskus D. Blauwendraat T.P. Pollnau M. 《Quantum Electronics, IEEE Journal of》2009,45(5):454-461
A reliable and reproducible deposition process for the fabrication of Al2O3 waveguides with losses as low as 0.1 dB/cm has been developed. The thin films are grown at ~ 5 nm/min deposition rate and exhibit excellent thickness uniformity within 1% over 50times50 mm2 area and no detectable OH- incorporation. For applications of the Al2O3 films in compact, integrated optical devices, a high-quality channel waveguide fabrication process is utilized. Planar and channel propagation losses as low as 0.1 and 0.2 dB/cm, respectively, are demonstrated. For the development of active integrated optical functions, the implementation of rare-earth-ion doping is investigated by cosputtering of erbium during the Al2O3 layer growth. Dopant levels between 0.2-5times1020 cm-3 are studied. At Er3+ concentrations of interest for optical amplification, a lifetime of the 4I13/2 level as long as 7 ms is measured. Gain measurements over 6.4-cm propagation length in a 700-nm-thick Al2O3:Er3+ channel waveguide result in net optical gain over a 41-nm-wide wavelength range between 1526-1567 nm with a maximum of 5.4 dB at 1533 nm. 相似文献
10.
High-k titanium silicate (i.e., TiSiO4) thin films of various thicknesses (in the 4.5- to 160-nm range) were successfully deposited by means of a sputter deposition process at room-temperature and integrated into metal-insulator-metal (MIM) capacitors. It is shown that the TiSiO4-based capacitors can exhibit a capacitance density as high as 30 fF/mum2 while maintaining low dielectric dispersion and losses. An excellent voltage linearity was also obtained ( alpha~600 ppm/V2 at 8.2 fF/mum2) together with a high dielectric constant of 16.5 and low leakage current of about 10 nA/cm2 at 1 MV/cm. Our results thus show that TiSiO4 films constitute a very promising approach for the achievement of high performance MIM capacitors 相似文献
11.
Singisetti U. Wistey M.A. Burek G.J. Baraskar A.K. Thibeault B.J. Gossard A.C. Rodwell M.J.W. Byungha Shin Kim E.J. McIntyre P.C. Bo Yu Yu Yuan Wang D. Yuan Taur Asbeck P. Yong-Ju Lee 《Electron Device Letters, IEEE》2009,30(11):1128-1130
Abstract-We report Al2O3Zln0.53Ga0.47As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n+ regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In0.53Ga0.47As channel with an In0.4sAl0.52As back confinement layer and the n++ source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed ID = 0.95 mA/mum current density at VGS = 4.0 V and gm = 0.45 mS/mum peak transconductance at VDS = 2.0 V. 相似文献
12.
Tung-Ming Pan Tin-Wei Wu 《Electron Devices, IEEE Transactions on》2008,55(6):1379-1385
In this paper, we have developed high-k Pr2O3 poly-Si thin-film transistors (TFTs) using different N2O plasma power treatments. High-k Pr2O3 poly-Si TFT devices using a 200-W plasma power exhibited better electrical characteristics in terms of high effective carrier mobility, high driving current, small subthreshold slope, and high ION/IOFF current ratio. This result is attributed to the smooth Pr2O3/poly-Si interface and low interface trap density. Pr2O3 poly-Si TFT with a 200-W N2O plasma power also enhanced electrical reliabilities such as hot carrier and positive bias temperature instability. All of these results suggest that a high-k Pr2O3 gate dielectric with the oxynitride buffer layer is a good candidate for high-performance low-temperature poly-Si TFTs. 相似文献
13.
Yuanzheng Yue Yue Hao Jincheng Zhang Jinyu Ni Wei Mao Qian Feng Linjie Liu 《Electron Device Letters, IEEE》2008,29(8):838-840
We have developed a novel AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor using a stack gate HfO2/Al2O3 structure grown by atomic layer deposition. The stack gate consists of a thin HfO2 (30-A) gate dielectric and a thin Al2O3 (20- A) interfacial passivation layer (IPL). For the 50-A stack gate, no measurable C-V hysteresis and a smaller threshold voltage shift were observed, indicating that a high-quality interface can be achieved using a Al2O3 IPL on an AlGaN substrate. Good surface passivation effects of the Al2O3 IPL have also been confirmed by pulsed gate measurements. Devices with 1- mum gate lengths exhibit a cutoff frequency (fT) of 12 GHz and a maximum frequency of oscillation (f MAX) of 34 GHz, as well as a maximum drain current of 800 mA/mm and a peak transconductance of 150 mS/mm, whereas the gate leakage current is at least six orders of magnitude lower than that of the reference high-electron mobility transistors at a positive gate bias. 相似文献
14.
Electrical characteristics of Al/yttrium oxide (~260 Å)/silicon dioxide (~40 Å)/Si and Al/yttrium oxide (~260 Å)/Si structures are described. The Al/Y2O3/SiO2/Si (MYOS) and Al/Y2 O3/Si (MYS) capacitors show very well-behaved I -V characteristics with leakage current density <10-10 A/cm2 at 5 V. High-frequency C - V and quasistatic C -V characteristics show very little hysteresis for bias ramp rate ranging from 10 to 100 mV/s. The average interface charge density (Q f+Q it) is ~6×1011/cm2 and interface state density D it is ~1011 cm-2-eV-1 near the middle of the bandgap of silicon. The accumulation capacitance of this dielectric does not show an appreciable frequency dependence for frequencies varying from 10 kHz to 10 MHz. These electrical characteristics and dielectric constant of ~17-20 for yttrium oxide on SiO2/Si make it a variable dielectric for DRAM storage capacitors and for decoupling capacitors for on-chip and off-chip applications 相似文献
15.
Chia-Wen Chang Chih-Kang Deng Shih-Chieh Wu Jiun-Jia Huang Hong-Ren Chang Tan-Fu Lei 《Display Technology, Journal of》2008,4(2):173-179
The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) with high-k Pr2O3 as gate dielectric is investigated for the first time. Using the Pr2O3 gate dielectric can obtain a high gate capacitance density and thin equivalent-oxide thickness, exhibiting a greatly enhancement in the driving capability of TFT device. Introducing fluorine ions into the poly-Si film by fluorine ion implantation technique can effectively passivate the trap states in the poly-Si film and at the Pr2O3/poly-Si interface to improve the device electrical properties. The Pr2O3 TFTs fabricated on fluorine-implanted poly-Si film exhibit significantly improved electrical performances, including lower threshold voltage, steeper subthreshold swing, higher field-effect mobility, lower off-state leakage current, and higher on/off current ratio, as compared with the control poly-Si Pr2O3 TFTs. Also, the incorporation of fluorine ions also improves the reliability of poly-Si Pr2O3 TFTs against hot-carrier stressing, which is attributed to the formation of stronger Si-F bonds. Furthermore, superior threshold-voltage rolloff characteristic is also demonstrated in the fluorine-implanted poly-Si Pr2O3 TFTs. Therefore, the proposed scheme is a promising technology for high-performance and high-reliability solid-phase crystallized poly-Si TFT. 相似文献
16.
Chang S.Z. Yu H.Y. Adelmann C. Delabie A. Wang X.P. Van Elshocht S. Akheyar A. Nyns L. Swerts J. Aoulaiche M. Kerner C. Absil P. Hoffmann T.Y. Biesemans S. 《Electron Device Letters, IEEE》2008,29(5):430-433
In this letter, we report that by employing the La2O3/SiOx interfacial layer between HfLaO (La = 10%) high- and Si channel, the Ta2C metal-gated n-MOSFETs VT can be significantly reduced by ~350 mV to 0.2 V, satisfying the low-Vy device requirement. The resultant n-MOSFETs also exhibit an ultrathin equivalent oxide thickness (~1.18 nm) with a low gate leakage (JG = 10 mA/cm2 at 1.1 V), good drive performance (Ion = 900 muA/mum at Isoff = 70 nA/mum), and acceptable positive-bias-temperature-instability reliability. 相似文献
17.
Metal-insulator-metal (MIM) capacitors fabricated with (8%) La-doped HfO2 single layer as well as HfLaO/ LaAlO3/HfLaO multilayer dielectric stack are demonstrated. While the La-doped HfO2 single layer is crystallized at 420°C annealing, HfLaO/LaAlO3/HfLaO multilayer dielectric stack remains amorphous. A high dielectric-constant value of 38 can be obtained when 8% La-doped HfO2 is crystallized into cubiclike structure. However, it is observed that the linearity of MIM capacitor is degraded upon crystallization. The multilayer film has lower average dielectric constant but shows low quadratic voltage linearity of less than 1000 ppm/V2 up to a capacitance density of 9 fF/?m2 . It is observed that the HfLaO single-layer MIM is suitable for the applications with requirements of high capacitance density and robust reliability, while the multilayer MIM is suitable for a precision circuit. 相似文献
18.
Cheng C.H. Pan H.C. Huang C.C. Chou C.P. Hsiao C.N. Hu J. Hwang M. Arikado T. McAlister S.P. Chin A. 《Electron Device Letters, IEEE》2008,29(10):1105-1107
We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 times 10-6 A/cm2 (at -1 V) at a 28 fF/ mum2 capacitance density. 相似文献
19.
《Electron Device Letters, IEEE》2009,30(6):614-616
20.
《Electron Device Letters, IEEE》2008,29(7):684-687