Numerical investigation on a laser based localised joining with a glass frit intermediate layer

Localised laser bonding using a glass frit intermediate layer is an ideal technology to hermetically package miniature devices without heating the function components. In this paper, we investigated from a device level packaging perspective, the influence of the laser ring diameter and width, copper boss (heat sink) diameter and misalignment of laser ring in a laser based localised bonding with glass frit intermediate layer. The conclusions are: (1) laser ring diameter and width have slight influence on the bonding process however a system with smaller laser ring diameters achieves better performance compared to that with larger ring diameters. (2) The copper boss (heat sink) diameter has significant influence on the laser power level required to achieve a particular glass frit curing temperature within the glass frit ring. Selection of an appropriate copper boss diameter is determined by the maximum allowable temperature for the temperature-sensitive devices under protection. (3) Misalignment of the laser ring has significant influence on the localised laser bonding and the recommended misalignment deviation for the laser ring should be less than 100 μm.     

Low cost anodic bonding for MEMS packaging applications

Anodic bonding of Pyrex 7740 glass to bare silicon and oxidized silicon wafer is presented for micro electro mechanical systems (MEMS) device packaging. Experimentally it has been observed that anodic bonding process parameters are varying with different 3D structures. The effects of bonding temperature and voltage are discussed by keeping the temperature constant and varying the voltage. The bonding interface has been studied by scanning electron microscope observations. Effective parameters for MEMS structure such as bonding temperature, voltage has been discussed.     

Fabrication of microfluidic devices for packaging CMOS MEMS impedance sensors

This work presents a polydimethylsiloxane (PDMS) microfluidic device for packaging CMOS MEMS impedance sensors. The wrinkle electrodes are fabricated on PDMS substrates to ensure a connection between the pads of the sensor and the impedance instrument. The PDMS device can tolerate an injection speed of 27.12 ml/h supplied by a pump. The corresponding pressure is 643.35 Pa. The bonding strength of the device is 32.44 g/mm². In order to demonstrate the feasibility of the device, the short circuit test and impedance measurements for air, de-ionized water, phosphate buffered saline (PBS) at four concentrations (1, 2 × 10⁻⁴, 1 × 10⁻⁴, and 6.7 × 10⁻⁵ M) were performed. The experimental results show that the developed device integrated with a sensor can differentiate various samples.     

Characterization of localized laser assisted eutectic bonds

An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon–quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints.     

Research on low-temperature anodic bonding using induction heating

A novel low-temperature anodic bonding process using induction heating is presented in this paper. Anodic bonding between silicon and glass (Pyrex 7740) has been achieved at temperature below 300 °C and almost bubble-free interfaces have been obtained. A 1 kW 400 kHz power supply is used to induce heat in graphite susceptors (simultaneously as the high-voltage electrodes of anodic bonding), which conduct heat to the bonding pair and permanently join the pair in 5 min. The results of pull tests indicate a bonding strength of above 5.0 MPa for induction heating, which is greater than the strength for resistive heating at the same temperature. The fracture mainly occurs inside the glass or across the interface other than in the interface when the bonding temperature is over 200 °C. Finally, the interfaces are examined and analyzed by scanning electron microscopy (SEM) and the bonding mechanisms are discussed.     

Laser Bonding of Glass to Silicon Using Polymer for Microsystems Packaging

Laser joining is a promising technique for wafer-level bonding. It avoids subjecting the complete microelectromechanical system (MEMS) package to a high temperature and/or the high electric field associated with conventional wafer-level bonding processes, using the laser to provide only localized heating. We demonstrate that a benzocyclobutene (BCB) polymer, used as an intermediate bonding layer in the packaging of MEMS devices, can be satisfactorily cured by using laser heating with a substantial reduction of curing time compared with an oven-based process. A glass-on-silicon (Si) cavity bonded with a BCB ring can be produced in a few seconds at a typical laser intensity of 1 W/mm² resulting in a local temperature of ~300degC. Hermeticity and bond strength tests show that such cavities have similar or better performance than cavities sealed by commercial substrate bonders. The influence of exposure time, laser power, and applied pressure on the degree of cure, bond strength, and hermeticity is investigated. The concept of using a large area uniform laser beam together with a simple mirror mask is tested, demonstrating that such a mask is capable of protecting the center of the cavity from the laser beam; however, to prevent lateral heating via conduction through the Si, a high-conductivity heat sink is required to be in good thermal contact with the rear of the Si.     

Integrated micro Pirani gauge based hermetical package monitoring for uncooled VO x bolometer FPAs

This paper presents the design and fabrication of a micro Pirani gauge using VO _x as the sensitive material for monitoring the pressure inside a hermetical package for micro bolometer focal plane arrays (FPAs). The designed Pirani gauge working in heat dissipating mode was intentionally fabricated using standard MEMS processing which is highly compatible with the FPAs fabrication. The functional layer of the micro Pirani gauge is a VO _x thin film designed as a 100 × 200 μm pixel, suspended 2 μm above the substrate. By modeling of rarefied gas heat conduction using the Extended Fourier’s law, finite element analysis is used to investigate the sensitivity of the pressure gauge. Also the thermal interactions between the micro Pirani gauge and bolometer FPAs are verified. From the fabricated prototype, the measured device TCR is about −0.8% K⁻¹ and the sensitivity about 1.84 × 10⁻³ W K⁻¹ mbar⁻¹.     

Fabrication and characterization of MEMS-based flow sensors based on hot films

The purpose of this paper is to propose two types of airflow velocity measurement modules, double-chip and single-chip, of MEMS-based flow sensors that consisting of heating resistors and sensing resistors on alumina substrates. In this study, MEMS techniques are used to deposit platinum films on the substrate to form resistors which are to regard as heaters and sensing elements. As air flows through the heater and the sensor, the temperature of the sensing resistor on the hot film decreases and the changes of the local temperature determine the airflow rate. The experimental results show the resistance linearly varies as airflow velocity changes from 5 to 28 ms⁻¹. Finally the experimental data indicate that sensing performance of the single-chip type is better than that of the double-chip type with its higher sensitivity (0.7479 Ω/ms⁻¹) due to the more rapid heat conduction from the heating resistor to the sensing resistor.     

New approach for batch microfabrication of silicon-based micro fuel cells

This paper reports a novel and straightforward approach to the development of a compact micro direct methanol fuel cell. The device consists of a hybrid polymer membrane as a feasible microintegrable electrolyte to be used together with silicon current collectors. These current collectors consist in microfabricated silicon chips that incorporate a fine electrode grid. The membrane combines two polymers with different functionalities, Nafion^® as a proton conducting material and PDMS as a flexible mechanical support. The compatibility of this membrane with MEMS fabrication processes lies in the acknowledged bonding capabilities of the PDMS polymer to materials typically used in microsystems technologies—such as silicon, silicon dioxide and glass—as well as its ability to withstand variations of the Nafion^® volume. The compatibility of all the components with microfabrication processes will permit the application of batch fabrication techniques for the whole device, so contributing to a significant lowering of the fabrication costs.     

Digitally-controlled array of solid-state microcoolers for use in surgery

This paper presents an approach for generating a well-defined cooling pattern over an area of tissue. An array of solid-state microcoolers is used, which could be included in a probe that provides local cooling. This medical instrument can be used for removal of scar tissue in the eye or for the rapid stopping of bleeding due to micro-cuts, which makes it a useful tool to medical doctors and could make surgery more secure to the patient. The array of microcoolers is composed of 64 independent thermo-electric elements, each controlled using an integrated circuit designed in CMOS. The independent control allows the flexible programming of the surface temperature profile. This type of control is very suitable in case abrupt temperature steps should be avoided. Cooling by lateral heat flow was selected in order to minimize the influence of heat by dissipation from the electronic circuits. Moreover, a thermo-electric component with lateral heat allows fabrication of the cooling elements using planar thin-film technology, lithography and wet etching on top of the silicon wafer. This approach is potentially CMOS compatible, which would allow for the fabrication of the thermo-electric elements on top of a pre-fabricated CMOS wafer as a post-process step. Each pixel is composed of thin-films of n-type bismuth telluride, Bi₂Te₃ and p-type antimony telluride, Sb₂Te₃, which are electrically interconnected as thermocouple. These materials have excellent thermoelectric characteristics, such as thermoelectric figures-of-merit, ZT, at room temperatures of 0.84 and 0.5, respectively, which is equivalent to power-factors, PF, of 3.62 × 10⁻³ W K⁻¹ m⁻² and 2.81 × 10⁻³ W K⁻¹ m⁻², respectively. The theoretical study presented here demonstrates a cooling capability of 15°C at room temperature (300 K ≈ 27°C). This cooling performance is sufficient to maintain a local tissue temperature at 25°C, which makes it suitable for the intended application. A first prototype was successfully fabricated to demonstrate the concept.     

Influence of environmental temperature on the dynamic properties of a die attached MEMS device

Die attach is one of the major processes that may induce unwanted stresses and deformations into micro-electro-mechanical systems (MEMS). The thermo-elastic coupling between the die and package may affect the performance of MEMS under various temperature loads, causing unreasonable effects of the output signal, such as zero offset, temperature coefficient of offset (TCO), nonlinearity, ununiformity and hysteresis, etc. A complete characterization of these effects is critical for a more reliable design. This work presents experimental studies of the temperature effects on the dynamic properties of MEMS. Microbridges and strain gauges with different dimensions were used as test structures. They were surface-micromachined on test chips and the chips were die attached on organic laminate substrates using epoxy bonding as well as tape adhering. The material and dimension of the substrate were specially defined to amplify the magnitude of the coupled deformation for the convenience of investigation. Modal frequencies of the microbridges under a set of controlled environmental temperature before and after die attach were measured using a laser Doppler vibrometer system. The average initial residual strain was also measured from the strain gauges to help analyze the dynamic behavior. Nonlinear TCO of the frequencies were observed to be as large as 2,500–5,000 ppm for the epoxy-bonded samples, in contrast with much smaller values for the tape-adhered and unpackaged ones. The frequencies recovered to their original values beyond the curing temperature of the epoxy. A distributed feature was also observed in frequencies of the microbridges with the same length but at different locations of the chip with a maximum relative difference of 20%. The process of thermal cycling and wire bonding was also applied to the samples and caused tender shifts of the frequencies. The experiments reveal major factors that are related to the temperature effects of die attached MEMS and the results are useful for improving the reliability of a package–device co-design.     

Assessment of testing methodologies for thin-film vacuum MEMS packages

In this paper, a summary of the most relevant failure mechanisms of thin-film vacuum microelectromechanical systems (MEMS) packages and existing testing techniques will be presented. Then, based on analytical models for thin-film vacuum MEMS packages (volume in the order of 10E−11 l), a feasibility study on options for thin-film vacuum MEMS package testing will be presented. This feasibility study leads to new insights and suggestions for future thin-film vacuum MEMS package testing.     

Stamp-and-stick room-temperature bonding technique for microdevices

Multilayer MEMS and microfluidic designs using diverse materials demand separate fabrication of device components followed by assembly to make the final device. Structural and moving components, labile bio-molecules, fluids and temperature-sensitive materials place special restrictions on the bonding processes that can be used for assembly of MEMS devices. We describe a room temperature "stamp and stick (SAS)" transfer bonding technique for silicon, glass and nitride surfaces using a UV curable adhesive. Alternatively, poly(dimethylsiloxane) (PDMS) can also be used as the adhesive; this is particularly useful for bonding PDMS devices. A thin layer of adhesive is first spun on a flat wafer. This adhesive layer is then selectively transferred to the device chip from the wafer using a stamping process. The device chip can then be aligned and bonded to other chips/wafers. This bonding process is conformal and works even on surfaces with uneven topography. This aspect is especially relevant to microfluidics, where good sealing can be difficult to obtain with channels on uneven surfaces. Burst pressure tests suggest that wafer bonds using the UV curable adhesive could withstand pressures of 700 kPa (7 atmospheres); those with PDMS could withstand 200 to 700 kPa (2-7 atmospheres) depending on the geometry and configuration of the device.     

A simple thermo-compression bonding setup for wire bonding interconnection in pressure sensor silicon chip packaging

In the process of piezo-resistive pressure sensor packaging, a simple thermo-compression bonding setup has been fabricated to achieve the wire bonding interconnection of a silicon chip with printed circuit board. An annealed gold wire is joined onto a pad surface with a needle-like chisel under a force of 0.5–1.5 N/point. The temperature of the substrate was maintained in the range of 150–200°C and the temperature of the chisel was fixed at around 150°C during wire bonding operation. The tensile strength of the wire bonding was measured with a bonding tester by the destructive-pulling experiment and was found to be at the average of 132 mN/mm². The microstructure of the bonding point was examined by scanning electron microscopy. The interface of the thermo-compression boning was shown to possess an acceptable level of reliability for a micro-electromechanical system (MEMS)-based device. The results showed that this setup can be easily operated for fabrication and is suitable for fabricating not only low-cost pressure sensors, but also other MEMS devices.

     

Solder bonding with a buffer layer for MOEMS packaging using induction heating

In this paper, the selective induction heating technology is applied to glass–glass and glass–silicon solder bonding for MOEMS (optical MEMS) packaging. The Ni bumping with a buffer layer is successful to release the thermal stress for avoiding delamination. The Au wetting layer must be thick enough to prevent from being solved entirely into Sn, and it will improve bonding strength. The bonding specimens are soaked into 25°C water and placed into 85°C/85% RH oven, respectively. No moisture penetrates into the cavity after 1 day in both test conditions. In the test condition of 125°C leakage-test liquid (Galden HS260), no bubble is observed. The lowest bonding strength is 3 MPa.     

A simple thermo-compression bonding setup for wire bonding interconnection in pressure sensor silicon chip packaging

In the process of piezo-resistive pressure sensor packaging, a simple thermo-compression bonding setup has been fabricated to achieve the wire bonding interconnection of a silicon chip with printed circuit board. An annealed gold wire is joined onto a pad surface with a needle-like chisel under a force of 0.5?C1.5?N/point. The temperature of the substrate was maintained in the range of 150?C200°C and the temperature of the chisel was fixed at around 150°C during wire bonding operation. The tensile strength of the wire bonding was measured with a bonding tester by the destructive-pulling experiment and was found to be at the average of 132?mN/mm². The microstructure of the bonding point was examined by scanning electron microscopy. The interface of the thermo-compression boning was shown to possess an acceptable level of reliability for a micro-electromechanical system (MEMS)-based device. The results showed that this setup can be easily operated for fabrication and is suitable for fabricating not only low-cost pressure sensors, but also other MEMS devices.     

Solder bonding with a buffer layer for MOEMS packaging using induction heating

In this paper, the selective induction heating technology is applied to glass–glass and glass–silicon solder bonding for MOEMS (optical MEMS) packaging. The Ni bumping with a buffer layer is successful to release the thermal stress for avoiding delamination. The Au wetting layer must be thick enough to prevent from being solved entirely into Sn, and it will improve bonding strength. The bonding specimens are soaked into 25°C water and placed into 85°C/85% RH oven, respectively. No moisture penetrates into the cavity after 1 day in both test conditions. In the test condition of 125°C leakage-test liquid (Galden HS260), no bubble is observed. The lowest bonding strength is 3 MPa.

     

Reliability study of hermetic wafer level MEMS packaging with through-wafer interconnect

In this paper, we developed a hermetic wafer level packaging for MEMS devices. Au–Sn eutectic bonding technology in a relatively low temperature is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of 1 mm × 1 mm × 700 μm, and a square loop Au–Sn metallization of 70 μm in width for hermetic sealing. The robustness of the package is confirmed by several tests such as shear strength test, reliability tests, and hermeticity test. The reliability issues of Au–Sn bonding technology, and copper through-wafer interconnection are discussed, and design considerations to improve the reliability are also presented. By applying O₂ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface. The mechanical effects of copper through-vias are also investigated numerically and experimentally. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, copper diffusion phenomenon, and cleaning process. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process.     

Development and optimization of the laser-assisted bonding process for a flip chip package

In a fine pitch flip chip package, a laser-assisted bonding (LAB) technology has recently been developed to overcome several reliability and throughput issues in the conventional mass reflow (MR) and thermal compression bonding technology. This study investigated the LAB process for a flip chip package with a copper (Cu) pillar bump using numerical heat transfer and thermo-mechanical analysis. During the LAB process, the temperature of the silicon die was uniform across the entire surface and increased to 280 °C within a few seconds; this was high enough to melt the solder. The heat in the die was quickly conducted to the substrate through the Cu pillar bumps. Meanwhile, the substrate temperature was low and remained constant. Therefore, a stable solder interconnection was quickly achieved with minimal stress and thermal damage to the package. The substrate thickness, the number of Cu bumps, and the bonding stage temperature were found to be important factors affecting the heat transfer behavior of the package. The temperature of the die decreased when a thinner substrate, a higher number of Cu bumps, and a lower bonding stage temperature were used. If the temperature of the die was not sufficiently high, insufficient heat was transferred to the solder to melt it, resulting in incomplete solder joint formation. Thermo-mechanical analysis also showed that the LAB process produced lower warpage and thermo-mechanical strain than the conventional MR process. These results indicated that a LAB process using a selective local heating method would be beneficial in reducing thermo-mechanical stress and increasing throughput for the fine pitch flip chip packages.

     

Leak detection methods for glass capped and polymer sealed MEMS packaging

This paper presents the limitations of the helium leak test when applied to typical MEMS packages. A novel closed-form expression is presented which allows the determination of the minimum cavity volume package that can be accurately tested using the helium leak test method in conjunction with a standard gross leak test. This expression can be used to find optimum test parameters for packages with cavity volumes greater than 2.6 × 10⁻³ cm³. Hermeticity testing using FTIR and Raman spectroscopy are considered as potential methods to overcome the limitations of the helium leak test method.