共查询到20条相似文献,搜索用时 78 毫秒
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Congcong Zhang Penglei Chen Wenping Hu 《Small (Weinheim an der Bergstrasse, Germany)》2016,12(10):1252-1294
Organic light‐emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field‐effect transistors (OFETs) and the light‐generation capability of organic light‐emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state‐of‐the‐art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source‐drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. 相似文献
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Hans Kleemann Alrun A. Günther Karl Leo Björn Lüssem 《Small (Weinheim an der Bergstrasse, Germany)》2013,9(21):3670-3677
Vertical organic thin‐film transistors (VOTFTs) are promising devices to overcome the transconductance and cut‐off frequency restrictions of horizontal organic thin‐film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self‐assembly processes which impedes a future large‐area production. In this contribution, high‐performance vertical organic transistors comprising pentacene for p‐type operation and C60 for n‐type operation are presented. The static current–voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self‐assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high‐performance applications of organic transistors. 相似文献
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Field‐Effect Transistors: Integration of Organic Electrochemical and Field‐Effect Transistors for Ultraflexible,High Temporal Resolution Electrophysiology Arrays (Adv. Mater. 44/2016)
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Wonryung Lee Dongmin Kim Jonathan Rivnay Naoji Matsuhisa Thomas Lonjaret Tomoyuki Yokota Hiromu Yawo Masaki Sekino George G. Malliaras Takao Someya 《Advanced materials (Deerfield Beach, Fla.)》2016,28(44):9869-9869
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Eric Daniel Głowacki Mihai Irimia‐Vladu Martin Kaltenbrunner Jacek Gsiorowski Matthew S. White Uwe Monkowius Giuseppe Romanazzi Gian Paolo Suranna Piero Mastrorilli Tsuyoshi Sekitani Siegfried Bauer Takao Someya Luisa Torsi Niyazi Serdar Sariciftci 《Advanced materials (Deerfield Beach, Fla.)》2013,25(11):1563-1569
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Particular attention has been focused on n‐channel organic thin‐film transistors (OTFTs) during the last few years, and the potentially cost‐effective circuitry‐based applications in flexible electronics, such as flexible radiofrequency identity tags, smart labels, and simple displays, will benefit from this fast development. This article reviews recent progress in performance and molecular design of n‐channel semiconductors in the past five years, and limitations and practicable solutions for n‐channel OTFTs are dealt with from the viewpoint of OTFT constitution and geometry, molecular design, and thin‐film growth conditions. Strategy methodology is especially highlighted with an aim to investigate basic issues in this field. 相似文献
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Eric Daniel Głowacki Mihai Irimia‐Vladu Martin Kaltenbrunner Jacek Ga̧siorowski Matthew S. White Uwe Monkowius Giuseppe Romanazzi Gian Paolo Suranna Piero Mastrorilli Tsuyoshi Sekitani Siegfried Bauer Takao Someya Luisa Torsi Niyazi Serdar Sariciftci 《Advanced materials (Deerfield Beach, Fla.)》2013,25(11):1513-1513
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Robert A. Street 《Advanced materials (Deerfield Beach, Fla.)》2009,21(20):2007-2022
Thin‐film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that can improve the performance, lower manufacturing cost, and enable new functionality. There are now many new options – organic semiconductor (OSCs), metal oxides, nanowires, printing technology as well as thin‐film silicon materials with new properties. All of the new materials have something to offer but none is entirely without technical problems. 相似文献