Frequency and voltage dependence of dielectric properties,complex electric modulus,and electrical conductivity in Au/7% graphene doped‐PVA/n‐Si (MPS) structures

In order to increase the capacitance of Au/n‐Si (MS) structure, 7% graphene doped PVA was coated on n‐Si as an interfacial layer. The measured data of capacitance (C) and conductance (G/ω) of Au/7% graphene doped‐PVA/n‐Si (MPS) structure was utilized for the calculation of real and imaginary parts of complex permittivity (ε^* = ε′ − jε″), loss tangent (tanδ), complex electric modulus (M^* = M′ + jM″), and electrical conductivity (σ). The admittance measurements (C and G/ω) were carried out in the frequency range of 0.5 kHz to 1 MHz at room temperature. Frequency dependence of the dielectric constant (ε′), dielectric loss (ε″) and tanδ shows a dispersive behavior at low frequencies. This behavior was explained by Maxwell–Wagner relaxation. Due to the dipolar and the interfacial polarizations, as well as the surface states (N_ss) and the interfacial PVA layer, the parameters exhibited a strong dependence on frequency and applied bias voltage. The σ versus log(f) plot exhibited both low and high frequency dispersion phenomena such that at low frequencies σ value corresponding to the dc conductivity (σ_dc), but at high frequencies it corresponds to the ac conductivity (σ_ac). M′ and M″, both, have low values in the low frequency region. However, an increase is observed with the increasing frequency due to the short‐range mobility of charge carriers. As a result, the change in dielectric parameters and electric modulus with frequency is the result of relaxation phenomena and surface states. © 2016 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2016 , 133, 43827.     

Dielectric constant and loss investigations of pristine,iodine‐doped and annealed polyetherimide film

Temperature‐ and frequency‐dependent dielectric behaviour has been investigated for pristine, iodine‐doped and annealed polyetherimide (PEI) in the temperature range 303–523 K at various frequencies (120 Hz, 1 kHz, 10 kHz and 100 kHz). In pristine PEI, the rapid decrease in the dielectric constant (ε′) in the temperature range 303–373 K is governed by the Kirkwood model whereas the gradual decrease in ε′ in the temperature range 373–473 K is governed by β‐relaxation (dipolar) and αβ‐relaxation (hybrid) processes. The occurrence of these relaxations is confirmed by the appearance of tan δ loss peaks at ca 403 and 443 K, respectively, in ε″–T curves. The temperature‐independence of ε′ in the temperature range 473–523 K is mainly governed by the α‐relaxation process associated with large segmental groups. The tan δ loss peak appearing at 503 K confirms this relaxation process. In iodine‐doped samples, an overall increase in ε′ is attributed to the formation of charge‐transfer complexes in the polymer structure. The dominance of a new relaxation process due to interaction of iodine with ether linkages neutralizes the 1/T rule in the low‐temperature region. A significant decrease in ε′ in annealed samples below 393 K is due to the suppression of the dipolar relaxation process. The enhancement in ε′ above 393 K is due to the dominance of the α‐relaxation process. The shift in the high‐temperature tan δ loss peak towards higher temperature with increasing frequency shows the distributive nature of relaxation time for this relaxation process. Copyright © 2011 Society of Chemical Industry     

Dielectric relaxation and Poole–Frenkel conduction in poly(vinyl chloride) blends with bisphenol A/Egyptian corncob resin

The dielectric constant (ε′), dielectric loss index (ε″), direct-current conductivity, and current–voltage (I–V) characteristics of pure poly(vinyl chloride) (PVC) and blends of PVC and bisphenol A/Egyptian corncobs (BCC) were investigated at different temperatures. The relaxation processes for PVC and its blends revealed that PVC and BCC had an incompatible phase. PVC blends with 5 wt % BCC exhibited a peculiar I–V behavior. Both ε′ and ε″ were used to study miscibility and phase behavior in blends of PVC. The activation energies of all PVC samples were calculated. At higher voltages, the conduction mechanism could be identified as the Poole–Frenkel type. In addition, the ionic groups of BCC could enhance the PVC conductivity. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2008     

Electrical and dielectric characteristics of Al/polyindole Schottky barrier diodes. II. Frequency dependence

The dielectric properties and ac electrical conductivity of Al/polyindole (Al/PIN) Schottky barrier diodes (SBDs) were investigated by using admittance spectroscopy (capacitance–voltage [C‐V] and conductance–voltage [G/ω‐V]) method. These C‐V and G/ω‐V characterizations were performed in the frequency range of 1 kHz to 10 MHz by applying a small ac signal of 40 mV amplitude from the external pulse generator, whereas the dc bias voltage was swept from (−10 V) to (+10 V) at room temperature. The values of dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tanδ), real and imaginary part of electrical modulus (M′ and M″), ac electrical conductivity (σ_ac), and series resistance (R_s) of the Al/PIN SBDs were found to be quite sensitive to frequency and applied bias voltage at relatively low frequencies. Although the values of the ε′, ε″, tanδ, and R_s of the device were observed to decrease with increasing frequencies, the electric modulus and σ_ac increased with increasing frequency for the high forward bias voltages. These results revealed that the interfacial polarization can more easily occur at low frequencies and that the majority of interface states (N_ss) between Al and PIN, consequently, contribute to deviation of dielectric properties of the Al/PIN SBDs. Furthermore, the voltage‐dependent profile of both R_s and N_ss were obtained from the C‐V and G/ω‐V characteristics of the Al/PIN SBDs at room temperature. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2011     

The effects of temperature,radiation, and illumination on current–voltage characteristics of Au/PVA(Co,Zn-doped)/n-Si Schottky diodes

Polyvinyl alcohol (PVA)/(Co-Ni) nanofiber film was fabricated on silicon wafer using electrospinning technique. The topography of the produced PVA/(Co-Ni) nanofiber film was examined by scanning electron microscopy (SEM). The Au/Poly (vinyl alcohol) (Co, Ni-doped)/n-Si Schottky diode (SD) was thermally formed in evaporating system after the spinning process. At first, the current–voltage (I–V) characteristics of Au/PVA (Co, Zn-doped)/n-Si SD was measured at the room temperature (300 K). For the investigating the effect of temperature, illumination and radiation on Au/PVA (Co, Zn-doped)/n-Si SD comparatively, the measurement was performed under the illumination intensity of 200 W, at 380K, and finally the radiation dose of 22 kGy respectively. The diode characteristics such as the zero-bias barrier height (ϕ_Bo), ideality factor (n) and series resistance (R_s) were calculated at room temperature and under the condition of high temperature, illumination, and radiation. It was found that these characteristics were affected by the illumination and radiation as well as the temperature. The density of interface states (N_ss) distribution profiles as a function of (E_c - E_ss) extracted from the forward I–V measurements were also affected by illumination and radiation even if just a bit. © 2012 Wiley Periodicals, Inc. J Appl Polym Sci, 2012     

Surface barrier layer effect in (In + Nb) co‐doped TiO2 ceramics: An alternative route to design low dielectric loss

Giant dielectric permittivity (ε′) with low loss tangent (tanδ) was reported in (In + Nb) co‐doped TiO₂ ceramics. Either of electron‐pinned defect‐dipole or internal barrier layer capacitor model was proposed to be the origin of this high dielectric performance. Here, we proposed an effectively alternative route for designing low‐tanδ in co‐doped TiO₂ ceramics by creating a resistive outer surface layer. A pure rutile‐TiO₂ phase with a dense microstructure and homogeneous dispersion of dopants was achieved in (In + Nb) co‐doped TiO₂ ceramics prepared by a simple sol‐gel method. Two giant dielectric responses were observed in low‐ and high‐frequency ranges, corresponding to extremely high ε′≈10⁶‐10⁷ and large ε′≈10⁴‐10⁵, respectively. After annealing in air, a low‐frequency dielectric response disappeared and could be restored by removing the outer surface of the annealed sample, indicating the dominant electrode effect in the initial sample. Annealing can cause improved dielectric properties with a temperature‐ and frequency‐independent ε′ value of ≈1.9 × 10⁴ and cause a decrease in tanδ from 0.1 to 0.035. High dielectric performance in (In_0.5Nb_0.5)_xTi_1?xO₂ ceramics can be achieved by eliminating the electrode effect and forming a resistive outer surface layer.     

Improved dielectric properties in A′‐site nickel‐doped CaCu3Ti4O12 ceramics

The improved dielectric properties and voltage‐current nonlinearity of nickel‐doped CaCu₃Ti₄O₁₂ (CCNTO) ceramics prepared by solid‐state reaction were investigated. The approach of A′‐site Ni doping resulted in improved dielectric properties in the CaCu₃Ti₄O₁₂ (CCTO) system, with a dielectric constant ε′≈1.51×10⁵ and dielectric loss tanδ≈0.051 found for the sample with a Ni doping of 20% (CCNTO20) at room temperature and 1 kHz. The X‐ray photoelectron spectroscopy (XPS) analysis of the CCTO and the specimen with a Ni doping of 25% (CCNTO25) verified the co‐existence of Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺. A steady increase in ε′(f) and a slight increase in α observed upon initial Ni doping were ascribed to a more Cu‐rich phase in the intergranular phase caused by the Ni substitution in the grains. The low‐frequency relaxation leading to a distinct enhancement in ε′(f) beginning with CCNTO25 was confirmed to be a Maxwell‐Wagner‐type relaxation strongly affected by the Ni‐related phase with the formation of a core‐shell structure. The decrease of the dielectric loss was associated with the promoted densification of CCNTO and the increase of Cu vacancies, due to Ni doping on the Cu sites. In addition, the Ni dopant had a certain effect on tuning the current‐voltage characteristics of the CCTO ceramics. The present A′‐site Ni doping experiments demonstrate the extrinsic effect underlying the giant dielectric constant and provides a promising approach for developing practical applications.     

Shielding and dielectric properties of sulfonic acid‐doped π‐conjugated polymer in 8.2–12.4 GHz frequency range

This article deals with dielectric and electromagnetic interference shielding properties of the polyaniline doped with dodecyl benzene sulfonic acid (DBSA) synthesized by microemulsion polymerization of aniline in aqueous solution of DBSA. Dielectric constant and shielding effectiveness due to absorption (SE_A) were calculated using S‐parameter obtained from the vector network analyzer in 8.2–12.4 GHz frequency range. Maximum SE_A of 26 dB (>99%) was achieved for polymer sample. The real part ε′ of complex permittivity shows small variation, whereas the imaginary part ε″ is found to decrease with the increase in frequency. Different formulations have been performed to see the effect of monomer to dopant ratio on intrinsic properties of polyaniline. Further characterization of polymer was carried out by UV–visible and thermal gravimetric analysis, whereas the conductivity measurements were carried out by the four‐probe method.© 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2010     

Dielectric properties of low molecular weight poly(ethylene glycol)s

This paper reports the measured values of dielectric permittivity ε′ and dielectric loss ε″ of ethylene glycol, diethylene glycol and poly(ethylene glycol)s of average molecular weight 200, 300, 400 and 600 g mol⁻¹ in the pure liquid state. The measurements have been carried out in the frequency range 200 MHz to 20 GHz at four different temperatures of 25, 35, 45 and 55 °C. The complex plane plots (ε″ versus ε′) of these molecules are Cole–Cole arcs. The static dielectric constant ε₀, high‐frequency limiting dielectric constant ε_∞, average relaxation time τ₀ and distribution parameter α have been determined from these plots. The value of the Kirkwood correlation factor g and the dielectric rate free energy of activation ΔF have also been evaluated. The dependence of relaxation time on molecular size and viscosity has been discussed. A comparison has also been made with the dielectric behaviour of these molecules in dilute solutions of non‐polar solvents, which were carried out earlier in this laboratory. The influences of intermolecular hydrogen bonding and molecular chain coiling on the dielectric relaxation of these molecules have been recognized. © 2000 Society of Chemical Industry     

Aging effects on the interface state density obtained from current–voltage and capacitance–frequency characteristics of polypyrrole/p‐Si/Al structure

A metallic polypyrrole film has been directly formed on a p‐type Si substrate by means of an anodization method under conditions of constant current density by an electrolyte being held at a constant temperature of 55°C that was composed of 0.40M pyrrole and 0.10M tetrabutylammonium tetrafluoroborate. An aluminum electrode was used as an ohmic contact. The polypyrrole/p‐Si/Al structure has clearly demonstrated rectifying behavior by the current–voltage curves studied at room temperature. The capacitance–voltage–frequency curves of the structure have been measured at different frequencies at room temperature in dark. To observe the effect of the aging, the measurements were also repeated 7, 15, 30, 60, and 90 days after fabrication of the polypyrrole/p‐Si/Al Schottky diode. During the whole measurement process, the probe of holder on sample was fixed to eliminate effects of surface inhomogeneity. The interface state density distribution curves of device have been obtained from forward bias current–voltage (I‐V) and capacitance–frequency (C‐f) characteristics as a function of aging time. From these curves, the exponential growth of the interface‐state density from midgap toward the top of the valence band is very apparent. The shape of the interface state density distribution curves from the forward bias I‐V characteristics are very similar to those obtained from C‐f. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 101: 2313–2319, 2006     

Blended graft copolymer of carboxymethyl cellulose and poly(vinyl alcohol) with banana fiber

Conducting hydrogel copolymer was prepared by graft copolymerization of carboxymethyl cellulose (CMC) and boric acid onto poly(vinyl alcohol) (PVA). The dielectric properties of CMC‐g‐PVA/prehydrolyzed banana blend have been investigated as a function of frequency, with special reference to pure prehydrolyzed banana. Also, the static bending for the blend was determined and no abrupt failure was observed. The dielectric properties measured were dielectric constant (ε′), dissipation factor (tan δ), and loss factor (ε″). At high frequencies, a transition in the relaxation behavior was observed, whereby the dielectric constant, loss tangent, and loss factor decreased with frequency. Experimental ε′ values of the blend are greater than those of prehydrolyzed banana. The dielectric behavior depends greatly on the nature of the present group, the crystallinity of the system, and the degree of hydrogen bonding between the different chains. The variation of the dielectric properties was correlated with blend morphology and also to the possibility for interfacial polarization that arises because of the differences in conductivities of the two phases. It was found from the infrared spectra that the incorporation of CMC‐g‐PVA copolymer decreases the crystallinity of the blend and also decreases the degree of hydrogen bonding, which results in a high dielectric constant. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 100: 1842–1848, 2006     

Electromagnetic properties of aluminosilicate‐filled polymer composites of poly(vinyl alcohol)–poly(vinyl pyrrolidone)

Nanocomposites of aluminocilicate are of growing interest not only because they offer exceptional reinforcement at very low filler concentrations, but also because of their electromagnetic properties and natural origin. Aluminosilicate‐filled biodegradable composites of poly(vinyl alcohol) (PVA) and poly(vinyl pyrrolidone) (PVP) were prepared by a conventional solvent casting technique using glass plates as the casting surfaces. The aluminosilicate used in this study is a multicomponent natural clay material. Its average particle size is 23–24 nm. The dielectric and magnetic properties of composite materials of PVA‐PVP and aluminosilicate were investigated in wide frequency ranges from 1 MHz to 1 GHz. The complex permittivity spectra (ε* = ε′ – jε″) had a relaxation type frequency dispersion with an ill‐defined broad resonance line width of the dielectric losses (ε″). The magnetic properties of composites are very low and are independent of the filler concentration. The new nanobiocomposites are brick red in color and weakly ferromagnetic in nature. POLYM. COMPOS., 26:739–744, 2005. © 2005 Society of Plastics Engineers     

Fabrication of poly(methyl methacrylate)‐block‐poly(N‐isopropylacrylamide) amphiphilic diblock copolymer on silicon substrates via surface‐initiated reverse iodine transfer polymerization

Amphiphilic diblock copolymer on silicon substrates were synthesized via surface‐initiated reverse iodine transfer polymerization (RITP) technique. The silicon substrates (Si (111) surface) were modified with the azo groups, which were introduced by the treatment of Si (111) surface with 4,4′‐azobis (4‐cyanopentanoic acid). The poly(methyl methacrylate) (PMMA) were then prepared under RITP conditions from the Si (111) wafer. The synthesis of amphiphilic diblock copolymer was carried out on Si‐g‐PMMA substrate by sequential addition of monomer N‐isopropylacrylamide (NIPAM). The observed narrow molecular weight distributions (M_w/M_n), linear kinetic plots, and linear plots of molecular weight (M_n) versus monomer conversion indicate that the chain growth from the silicon substrates is a controlled process with a “living” characteristic. The ellipsometry and contact angle results indicated that the MMA had grafted from the surface of the silicon substrates successfully and the graft layer was well defined. The structure of the polymer and the ability to extend the chains were characterized and confirmed with the surface sensitive techniques such as X‐ray photoelectron spectroscopy and atomic force microscope. POLYM. ENG. SCI., 54:925–931, 2014. © 2013 Society of Plastics Engineers     

Polarization behavior of sol‐gel‐derived relaxor Ba(Zr,Ti)O3 films

Films of the relaxor ferroelectric BaZr_0.25Ti_0.75O₃ (0.25‐BZT) were synthesized via a sol‐gel route to investigate the effect of film thickness on the dielectric properties and for comparison with normal ferroelectric BaTiO₃ (BT). The as‐prepared films on Nb‐doped SrTiO₃ (Nb–ST) displayed a (100) orientation; thinner films had stronger (100) orientations. Microwave dielectric measurements up to a few GHz quantified the polarizations, that is, the dipole contribution, ε_dipole, the combination of the ionic and electronic polarizations, ε_ionic+el., and the total contribution, ε_total. The ε_dipole in the relaxors at a film thickness of t=630 nm was 360, which was double that for the normal ferroelectric BT (ε_dipole=180) at t=735 nm. The larger apparent permittivity of the BZT therefore originated from the larger ε_dipole of the polar nanoregions (PNRs), while the nanograins of BT with few domain walls led to a comparably smaller ε_dipole. The volume ratio of the surface and film‐substrate interface lacking the dipole interactions increased with the reduction in the film thickness, leading to the significant depression in the permittivity for both specimens. The difference in the thickness dependence of the dielectric properties of the sol‐gel derived relaxor BZT and the normal ferroelectric BT films was attributed to the different origins of their dipole contribution, that is, the PNRs and ferroelectric domains, respectively.     

Effect of BaTiO3 on the microwave absorbing properties of Co‐doped Ni‐Zn ferrite nanocomposites

Coprecipitation and hydrothermal method were utilized for the synthesis of Co‐doped Ni‐Zn ferrite and barium titanate nanoparticles. The microwave absorption properties of Co‐doped Ni‐Zn ferrite/barium titanate nanocomposites with single layer structure were studied in the frequency range of 8.2–12.4 GHz.The spectroscopic characterizations of the nanocomposites were examined using X‐ ray diffraction, scanning electron microscopy, transmission electron microscopy and dynamic light scattering measurement. Thermogravimetric analysis indicated the high thermal stabilities of the composites. The composite materials showed brilliant microwave absorbing properties in a wide range of frequency in the X‐band region with the minimum return loss of ?42.53 dB at 11.81 GHz when sample thickness was 2 mm and the mechanisms of microwave absorption are happening mainly due to the dielectric loss. Compared with pure Co‐doped Ni‐Zn ferrite, Co‐doped Ni‐Zn ferrite/BaTiO₃ composites exhibited enhanced absorbing properties. The microwave absorbing properties can be modulated by controlling the BaTiO₃ content of the absorbers and also by changing the sample thicknesses. Therefore, these composites can be used as lightweight and highly effective microwave absorbers. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014 , 131, 39926.     

Dielectric analysis of α‐relaxation process of chlorinated poly(vinyl chloride) stabilized with nitro‐phenyl maleimide

Nitro‐phenyl maleimide (NPM), is the organic stabilizer for poly (vinyl chloride) (PVC), has been investigated as thermal plasticization for rigid chlorinated poly (vinyl chloride) (CPVC). Dielectric relaxation of CPVC stabilized with 10 wt% of NPM has been studied in temperature and frequency ranges of 300–450 K and 10 kHz–1 MHz, respectively. An analysis of the dielectric constant, ε′ and dielectric loss index, ε″, was performed assuming a plasticization effect of NPM molecules. The plasticization effect of NPM molecules was confirmed by the behavior of the dielectric modulus M′ and M″ spectra. A clear dielectric α‐relaxation process has been obtained in the studied temperature range. The results showed that NPM reduce the glass transition temperature, T_g, of CPVC by about 20 K. This effect has been assigned to the plasticization effect of NPM. At lower temperatures, dielectric modulus spectra reveal that there is a role of the effect of the electrode polarization in the relaxation process. The behavior AC conductivity, σ_ac, indicated that the conduction mechanism in all CPVC samples is hopping type conduction. POLYM. ENG. SCI., 2013. © 2012 Society of Plastics Engineers     

Microwave dielectric properties and EMI shielding effectiveness of poly(styrene‐b‐styrene‐ butadiene‐styrene) copolymer filled with PAni.Dodecylbenzenesulfonic acid and carbon black

Conducting composites of polyaniline doped with dodecylbenzenesulfonic acid (PAni.DBSA), carbon black (CB) and poly(styrene‐b‐styrene‐butadiene‐b‐styrene) (STF) as supporting matrix were prepared by in situ polymerization. The influence of components and composition (% w/w) on the electromagnetic properties (dielectric constant ε′ and the dielectric loss ε″) and electromagnetic interference shielding effectiveness (EMI‐SE) of the materials were evaluated with a waveguide, using a microwave network analyzer from 8.2 to 12.4 GHz (X‐band). It was found that CB presence generates adverse effects on PAni.DBSA yield during synthesis, as it can be seen by X‐ray diffraction and TGA analyses. The type of PAni.DBSA formed modifies the composites properties. Dielectric constant, loss factor, and EMI shielding increase with conductive filler loading. Both the fillers, individually and in combination, increase the properties; however, the effect is not additive in nature. POLYM. ENG. SCI., 52:2041–2048, 2012. © 2012 Society of Plastics Engineers     

Dielectric dispersion and AC conductivity of acrylonitrile butadiene rubber‐poly(vinyl chloride)/graphite composite

Dielectric properties and ac electrical conductivity of Acrylonitrile Butadiene Rubber‐poly(vinyl chloride)/Graphite Composite were studied at different frequencies (10²?10⁶ Hz) in the temperature range (298–423 K). The results show that the dielectric constant (ε′), dielectric loss (ε″), ac electrical conductivity (σ_ac) and, the electric modulus are strongly dependent on the frequency and temperature. The dielectric constant ε′ increases with temperature and decreases with frequency, whereas the dielectric loss ε″ displays a broad maximum peak whose position shifts with temperature to a higher frequency region. Cole–Cole diagrams have been used to investigate the frequency dependence of the complex impedance at different temperature and graphite loading. Interfacial or Maxwell‐Wagner‐Sillars relaxation process was revealed in the frequency range and temperature interval of the measurements, which was found to follow the Havriliak–Negami approach for the distribution of relaxation times. At constant temperature, the frequency dependence of ac conductivity was found to fit with the established equation σ_ac(ω) = Aω^s quite well. The values of S for the investigated samples lie between 0.88 and 0.11. The conduction mechanism of ac conduction was discussed by comparing the behavior of the frequency exponent S(T) with different theoretical models. It was found that the correlated barrier hopping (C.B.H.) is the dominant conduction mechanism. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2011     

Order–Disorder Phase Transition and Magneto‐Dielectric Properties of (1−x)LiFe5O8–xLi2ZnTi3O8 Spinel‐Structured Solid Solution Ceramics

In this study, the spinel solid solution ceramics (1?x)LiFe₅O₈–xLi₂ZnTi₃O₈ (0 ≤ x ≤ 1) were prepared via the solid‐state reaction method. The phase evolution, sintering behaviors, microstructures, magneto‐dielectric properties, and microwave dielectric properties were systematically investigated. The XRD and SEM analysis indicated that the LiFe₅O₈ phase and the Li₂ZnTi₃O₈ phase were almost fully soluble in each other at any proportion. Meanwhile, the evidence of ionic substitution has been directly observed at the atomic scale by means of scanning transmission electron microscopy, which is further confirmed by the Raman spectroscopy. Evidence shows that the magnetic and dielectric properties are quite sensitive to the compositions. The optimal results with remarkable magneto‐dielectric properties of μ′ = 38.2, tanδ_μ = 0.25, ε′ = 19.6, tanδ_ε = 8 × 10^?3 at 1 MHz, and ε′ = 19.1, Q × f = 10 400 GHz at about 7 GHz have been obtained in 0.25LiFe₅O₈–0.75Li₂ZnTi₃O₈ sample. The design of complex spinel solid solution can generate novel magneto‐dielectric single‐phase ceramics combining both high permeability and good dielectric properties, which provides a way in developing multifunctional materials for applications in electronic devices.     

Domain Reengineering of the [011]‐Poled PMN–0.35PT Single Crystals for Dielectric Bolometer Arrays

The domain configuration was reengineered with a modified poling procedure for the [011]‐poled single‐domain PMN–0.35PT crystals located at the morphotropic phase boundary. As a consequence, the dielectric constant ε_r at room temperature was significantly enhanced by more than 10 times to about 18 000, extremely higher than the reported (1 ? x)Pb(Mg_1/3Nb_2/3)O₃‐xPbTiO₃ ferroelectric crystals. Besides, the decreasing rate of the dielectric constant (dε_r/dT) was about 300/K with a temperature coefficient (α) of 1.7%/K, comparable to the BST materials for dielectric bolometer applications. The ferroelectric phase transition behavior was investigated to establish the poling procedure and a thermal hysteresis of about 25°C was indicated across the room temperature for the orthorhombic–tetragonal phase transition, which contributed to the revolution of the domain pattern.