2.30GHz—2.70GHz锁相环式频率综合技术研究

本文阐述了一个基本的Ｓ波段锁相式频率综合器，频率范围是２．３０ＧＨｚ－２．７０ＧＨｚ，频率步进为５ＭＨｚ，相位噪声指标为￡（１０ｋＨｚ）〈－９５ｄＢｃ／Ｈｚ，杂散抑制优于５０ｄ，输出功率大于１０ｄＢｍ。     

L波段数字锁相环频率合成器的研究

本文介绍了一种Ｌ波段锁相环频率合成器，频率范围１．１－１．６ＧＨＺ，频率步进为１ＭＨＺ，相位噪声为ε（１０ｋＨｚ）〈－９０ｄＢｃ／Ｈｚ杂散抑制优于５５ｄＢ，输出功率≥０ｄＢｍ。     

Da波段锁相系统研究

利用多环方案，研制了八毫米波锁相源系统，实验表明，３４．７ＧＨｚ频率点输出的相位噪声指标（傅氏频率为１ＫＨｚ时）为－７８ｄＢｃ／Ｈｚ，杂散优于－６０ｄＢｃ，输出功率大于４０ｍＷ．     

Ka波段频率合成器

本文介绍了一种基于毫米波谐波混频、中频锁相的Ｋａ波段频率合成器的设计方案及实现结果。合成器的频率范围为２６．５￣４０ＧＨｚ,输出功率大于＋５ｄＢｍ,频率步进值为１ＭＨｚ,相噪指标为（１０ｋＨｚ）〈－６５ｄＢｃ／Ｈｚ,杂散低于－５５ｄＢｃ。     

2～18GHz GaAs单片超宽带放大器

介绍了２￣１８ＧＨｚ ＧａＡｓ微波低噪声宽带单片放大器设计原理及主要研究工作，给出了主要研究结果：在２￣１８ＧＨｚ频率范围内，管壳封装的两级级联放大器的增益Ｇ＝１３．５￣１８．３ｄＢ，噪声系数Ｆｎ＝４．２￣６．２ｄＢ，输入电压驻波比ＶＳＷＲｉｎ〈２．０，输出电压驻波比ＶＳＷＲｏｕｔ〈２．５。     

三毫米低相噪锁相系统研究

采用锁相方法，解决了三毫米波信号源的高稳定和低相噪问题，经测试，９２．６ＧＨｚ时其相位噪声指标（傅氏频率为１ＫＨｚ时），为－７５ｄＢｃ／Ｈｚ，杂散优于－５５ｄＢｃ，输出功率大于１０ｍＷ。     

8—12GHz低噪声PHEMT单片集成电路

描述了以ＰＨＥＭＴ为有源器件的８￣１２ＧＨｚ宽带低噪声单片电路的设计及制造，获得了满意的结果。其性能为ｆ＝８￣１２ＧＨｚ，Ｇａ＝１７．４￣１９．５ｄＢ，Ｆｎ＝１．８４￣２．２０ｄＢ；ｆ＝８￣１４ＧＨｚ，Ｇａ＝１７．４￣１９．９ｄＢ，Ｆｎ＝１．８４￣１．５ｄＢ。     

超低相位噪声超高速声表面波雷达频率综合器

介绍了一种新型的高性能雷达频率综合器的制作方法，即采用声表面波技术制作高性能的雷达频综器。采用这种方法成功地制造了Ｌ波段、Ｓ波段、Ｃ波段超低相位噪声超高速频率综合器。该类频综输出信号具有极低相位噪声（１．６ＧＨｚ处：单边带相位噪声Ｌｍ（１ｋＨｚ）＝－１２７ｄＢｃ／Ｈｚ；３．４ＧＨｚ处：Ｌｍ（１ｋＨｚ＝－１２２ｄＢｃ／Ｈｚ；６．８ＧＨｚ处：Ｌｍ（１ｋＨｚ）＝－１１６ｄＢｃ（Ｈｚ）、极短的频率切换时间（约１６０ｎｓ）、低杂波电平（Ｌ波段为－７０ｄＢ；Ｓ波段为－６５ｄＢ；Ｃ波段为－６０ｄＢ）、较多频点（５１点）等多项优异性能。同时，该频综通过了各项环境试验的考核，且长期工作性能稳定。     

锁相介质振荡器

锁相介质振荡器采用锁柏稳频技术将介质振荡器的频率稳定在参考频率上。研制的一种Ｘ波段锁相介质振荡器,得到的性能指标如下：频率８．４４８ＧＨｚ;相位噪声≤ －８０ｄＢＣ／Ｈｚ＠１００ｋＨｚ、≤－１１０ｄＢ／Ｈｚ＠１００ｋＨｚ;输出功率≥１０ｄＢｍ;杂波≤－７５ｄＢｃ、谐波≤－３０ｄＢｃ。     

Ku波段固态倍频源

采用晶振 倍频链的方式研制生产了１３ Ｇ Ｈｚ 的微波固态频率源。在－ ５５～＋ ８５℃温度范围内, 输出功率优于２５０ｍ Ｗ, 相位噪声为－ １０２ｄ Ｂ／１ｋ、－ １１０ｄ Ｂ／１０ｋ。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.