SiO2/Si(111)表面Ge量子点的生长研究

Si衬底用化学方法清洗后,表面大约残余1.0 nm厚SiO2薄膜.利用原子力显微镜(AFM)和反射高能电子衍射(RHEED)来研究温度和Ge蒸发厚度对在SiO2薄膜表面生长的Ge量子点的影响.实验结果表明,当衬底温度超过500 ℃时,SiO2开始与Ge原子发生化学反应,并形成与Si(111)表面直接外延的Ge量子点.在650 ℃时,只有Ge的厚度达到0.5nm时,Ge量子点才开始形成.     

SiO2/Si(111)表面Ge量子点的生长研究

Si衬底用化学方法清洗后,表面大约残余1.0 nm厚SiO2薄膜.利用原子力显微镜(AFM)和反射高能电子衍射(RHEED)来研究温度和Ge蒸发厚度对在SiO2薄膜表面生长的Ge量子点的影响.实验结果表明,当衬底温度超过500 ℃时,SiO2开始与Ge原子发生化学反应,并形成与Si(111)表面直接外延的Ge量子点.在650 ℃时,只有Ge的厚度达到0.5nm时,Ge量子点才开始形成.     

500℃下利用UHV/CVD在Si衬底上直接生长近平面Si0.5Ge0.5层

利用UHV/CVD系统,在一个相对较低的温度500℃下,研究了Si1-xGex层中的Ge含量与生长条件之间的关系,此时的Si1-xGex层处于一种亚稳的状态.并直接在Si衬底上生长制备了10个周期的3.0 nm-Si0.5Ge0.5/3.4 nm-Si多量子阱.拉曼谱、高分辨显微电镜和光荧光谱对其结构和光学性能进行的表征表明这种相对较厚的Si0.5Ge0.5/Si多量子阱结构基本上仍是近平面生长的,内部没有位错,其在电学和光学器件上具有潜在的应用.     

Ge/Si量子点生长的研究进展

回顾了近年来在Ge/Si量子点生长方面的研究进展.主要讨论了为了提高量子点空间分布有序性、增大量子点的密度、减小量子点的尺寸及改善其分布均匀性而采取的各种方法,如图形衬底辅助生长、表面原子掺杂及利用超薄SiO2层辅助生长等,以及Ge量子点的演变及组分变化.     

埋层应变对溅射生长Ge量子点的影响

利用离子束溅射制备双层Ge/Si量子点,通过变化Si隔离层厚度和Ge沉积量研究了埋层应变场对量子点生长的影响。实验中观察到隔离层厚度较薄时,双层结构中第2层量子点形成的临界厚度减小,生长过程提前;此外,随着Ge沉积量的增加,第2层量子点密度维持在一定范围,分布被调制的同时岛均匀长大呈现单模分布。增大隔离层厚度,埋层岛的生长模式在第2层岛生长时得到复制。通过隔离层传递的不均匀应变场解释了量子点生长模式的变化。     

快速热退火对多层Ge量子点晶体质量的影响

使用超高真空化学气相淀积(UHV/CVD)设备在Si衬底上生长多层Ge量子点,用双晶X射线衍射(DCXRD)、拉曼光谱(Raman)等手段表征在不同条件下快速热退火的Ge量子点材料的组分、应力等特性,研究了快速热退火对多层Ge量子点晶体质量的影响.结果表明:随着退火温度的升高,量子点中Ge的组分下降,量子点应变的弛豫程...     

Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光

由于Si/SiGe异质结构的带阶差主要发生在价带,为实现高效率的发光,本文从理论上设计了在硅基Si1-xGex虚衬底上外延应变补偿的Si/S1-yGey(y>x)量子阱的能带结构,将量子阱对电子的限制势垒提高到100meV以上。在实验上,采用300℃生长的Ge量子点插入层,制备出薄的SiGe驰豫缓冲层(虚衬底),表面Ge组份达到0.25,表面粗糙度小于2nm,驰豫度接近100%。在我们制备的SiGe缓冲层上外延了应变补偿SiGe/Si多量子阱结构,并初步研究了其发光特性。     

束流密度对Ge/Si量子点溅射生长的影响

采用离子束溅射技术在Si基底上自组织生长了一系列Ge量子点样品,研究了束流密度对Ge/Si量子点的尺寸分布和形貌演变的影响。原子力显微镜测试结果表明,随着束流密度的增加,量子点的面密度持续增大,其尺寸不断减小,量子点的形貌由圆顶形转变为过渡圆顶形。计算直径标准偏差的结果表明,当束流密度为0.86mA/cm2时,量子点的尺寸均匀性最佳。束流密度与沉积速率成正比,影响着表面吸附原子与其它原子相遇而形成晶核的能力。     

硅、锗材料在Si(100)表面的生长研究

利用扫描隧道显微镜和超高真空实验装置系统进行了Si(10 0 )表面生长Si,Ge的实验研究。分析了所生成表面的形貌、结构等物理性质。研究表明 :Si在Si(10 0 )表面的同质生长可以形成纳米结构薄膜。Ge在Si(10 0 )表面生长形成规则的三维小岛。而在Si/Ge/Si(10 0 )多层膜上生长则形成大小二种三维岛。研究表明大岛具有Ge/Si/Ge的壳层结构     

硅、锗材料在Si（100）表面的生长研究

利用扫描隧道显微镜和超高真空实验装置系统进行了Si（100）表面生长Si，Ge的实验研究。分析了所生成表面的形貌、结构等物理性质。研究表明：Si在Si（100）表面的同质生长可以形成纳米结构薄膜。Ge在Si（100）表面生长形成规则的三维小岛，而在Si/Ge/Si（100）多层膜上生长则形成大小二种三维岛，研究表明大岛具有Ge/Si/Ge的壳层结构。     

Real gas choked flow conditions at low reduced-temperatures

Real gas choked mass flux is calculated for a frictionless stream expanding isentropically until it reaches the speed of sound and without phase changes. The other parameters associated with the choked state are the pressure, density, temperature ratios, and the speed of sound. Departure of the choked mass flux from the ideal gas model is discussed first in absolute terms and then in relative terms, using the Principle of Corresponding States, for gases with boiling points in the low temperature range. Reduced-stagnation pressures are examined up to values of 30 for hydrogen, neon, nitrogen, argon, methane, krypton, xenon, and R-14 and up to 100 for ⁴He. The corresponding reduced-stagnation temperatures go down to 1.4 and in some cases down to 1.2 for nitrogen and argon. Also discussed are the limiting values of stagnation parameters for which no phase change occurs in the choked state. Compared to the ideal gas, the mass flux may almost double and the critical pressure ratio may decrease by an order of magnitude. The relevance of results is discussed qualitatively and quantitatively for Joule-Thomson cryocooling.     

As-cast microstructures and behavior at high temperature of chromium-rich cobalt-based alloys containing hafnium carbides

Hafnium is often used to improve the high temperature oxidation resistance of superalloys but not to form carbides for strengthen them against creep. In this work hafnium was added in cobalt-based alloys for verifying that HfC can be obtained in cobalt-based alloys and for characterizing their behavior at a very temperature. Three Co–25Cr–0.25 and 0.50C alloys containing 3.7 and 7.4 Hf to promote HfC carbides, and four Co–25Cr– 0 to 1C alloys for comparison (all contents in wt.%), were cast and exposed at 1200 °C for 50 h in synthetic air. The HfC carbides formed instead chromium carbides during solidification, in eutectic with matrix and as dispersed compact particles. During the stage at 1200 °C the HfC carbides did not significantly evolve, even near the oxidation front despite oxidation early become very fast and generalized. At the same time the chromium carbides present in the Co–Cr–C alloys totally disappeared in the same conditions. Such HfC-alloys potentially bring efficient and sustainable mechanical strengthening at high temperature, but their hot oxidation resistance must be significantly improved.     

Degradation behaviour of sputtered Co–Al coatings on superalloy

Degradation behaviour of sputtered Co–Al coatings on Superni-718 substrate has been investigated. Cyclic high temperature oxidation tests were conducted on uncoated and coated samples at peak temperatures of 900 °C for up to 100 thermal cycles between the peak and room temperatures. The results showed that a dense scale formed on the coated samples during thermal cycling at the peak temperature of 900 °C. The external scale exhibited good spallation resistance during cyclic oxidation testing at both temperatures. The improvement in oxide scale spallation resistance is believed to be related to the fine-grained structure of the coating. Nanostructured Co–Al coatings on Superni-718 substrate were deposited by DC/RF magnetron sputtering. FE-SEM/EDS, AFM, and XRD were used to characterize the morphology and formation of different phases in the coatings, respectively. The Co–Al coating on superalloy substrate showed better performance of cyclic high temperature oxidation resistance due to its possession of β-CoAl phase as Al reservoir and the formation of Al₂O₃ and spinel phases such as CoCr₂O₄ and CoAl₂O₄ in scale. The oxidation results confirmed an improved oxidation resistance of the Co–Al coating on superalloy as compare to bare substrate in air at 900 °C temperature up to 100 cycles.     

Capacitance based mass metering for cryogenic fluids

This paper describes a method for measuring the mass of cryogenic fluids in on-board rocket propellant tanks or ground storage tanks. Linear approximations to the Clausius-Mossotti relationship serve as the foundation for a capacitance based mass sensor, regardless of fluid density stratification or tank shape. Sensor design considerations are presented along with the experimental results for a capacitance based mass gage tested in liquid nitrogen. This test data is shown to be consistent with theory resulting in a demonstrated mass measurement accuracy of ±0.75% and a deviation from linearity of less than ±0.30% of full scale mass. Theoretical accuracies are also shown to be ±0.73% for hydrogen and ±1.39% for oxygen for a select range of pressures and temperatures.     

Equipment using a “static-analytic” method for solubility measurements in potentially hazardous binary mixtures under cryogenic temperatures

A new apparatus designed to study, at cryogenic temperatures, thermodynamic equilibria of potentially explosive binary systems such as hydrocarbon-oxygen mixtures is described herein. This equipment has an equilibrium cell which was especially designed to minimize hazards while allowing accurate phase equilibrium measurements. Reliability of results, obtained with this equipment has been verified by working on the nitrogen-propane system, for which data are already available in literature, over a large range of compositions and at various temperatures. Four isothermal curves describing liquid phase compositions at 109.98, 113.77, 119.75 and 125.63 K have been determined. Our experimental data are represented within 2% in compositions and in pressures through the Peng-Robinson equation of state implying Mathias-Copeman alpha function and Huron-Vidal mixing rule. Comparisons to literature allow pointing out: good agreement is observed with Kremer and Knapp data (1983) while the three sets of Poon and Lu data (1974) presenting systematic positive deviation are consequently judged as suspicious.     

Thermal Stability of Amorphous Hydride Mg_(50)Ni_(50)H_(54) and Mg_(30)Ni_(70)H_(45)

The thermal stability of amorphous ternary hydrides Mg_(50)Ni_(50)H_(54) and Mg_(30)Ni_(70)H_(45) and their corre-sponding amorphous binary alloys Mg_(50)Ni_(50) and Mg_(30)Ni_(70) were studied with X-ray diffraction(XRD) and differential scanning calorimetry(DSC). Samples of the amorphous alloys were preparedby mechanical alloying and the amorphous hydrides were obtained by charging the alloys with gas-eous hydrogen at 3.0 MPa and 423 K. It was found that the amorphous hydrides released most oftheir hydrogen before the crystallization of the essentially hydrogen depleted amorphous alloy. Thecrystallization temperature of amorphous Mg_(50)Ni_(50)H_(54) elevated and that of amorphousMg_(30)Ni_(70)H_(45) did not change in relation to the original binary amorphous alloy. This is very excep-tional for amorphous hydrides. The reason for the effects of hydrogen absorption/desorption on thecrystallization of amorphous alloys was discussed.     

长余辉材料Sr_4Al_(14)O_(25)∶Eu~(2+),Nd~(3+)的溶胶凝胶法制备及性能研究

首次研究了以Nd~(3+)离子为辅助激活剂,对Eu~(2+)掺杂的发光材料Sr_4Al_(14)O_(25):Eu~(2+)余辉性能的影响.用溶胶凝胶法合成了Eu~(2+), Nd~(3+)共掺杂的Sr_4Al_(14)O_(25):Eu~(2+),Nd~(3+)发光粉末,并用扫描电镜、X射线衍射计、荧光分光光度计、余辉亮度测试仪、热释光剂量计等手段对粉末样品进行了表征.结果表明,在1350℃得到了单一的Sr_4Al_(14)O_(25)相,粉末颗粒平均粒度在1μm左右.Eu~(2+), Nd~(3+)共掺杂的Sr_4Al_(14)O_(25):Eu~(2+),Nd~(3+)发光粉末有402和485nm两个发射峰,与Eu~(2+)单掺杂的Sr_4Al_(14)O_(25):Eu~(2+)相比,发射峰位置没有变化,但适量的掺杂可以大大提高余辉时间和余辉亮度,余辉时间可达18h以上.最后通过对热释光谱的分析解释了双掺杂发光粉余辉性能增强的原因,适宜深度的陷阱可以有效存储光能,增强余辉的时间和强度.     

链结构对偏氟乙烯铁电共聚物介电性质的影响

用改进的介电松弛谱仪(精度 2‰)测定了 VDF(52)/TrFE(48)和VDF(47.5)/TrFE(47.5)/HeFP(5)在-120—140℃,10~(-2)-10~4Hz 范围的复数介电常数。介电松弛研究结果显示5mol%的 HeFP 导致三元共聚物 T_c 下降(30℃),非晶松弛强度减弱,T_g 降低(3℃),并引起局域松弛活化能升高(10.1kJ/mol),松弛时间增长。     

Gas gap thermal switches using neon or hydrogen and sorption pump

The very low pressure obtained thanks to adsorption phenomenon at low temperature can be used to build cryogenic heat switches, which offer the possibility to make or break thermal contact between two parts of a cryogenic system. The ON (conducting) and OFF (insulating) states of the switch are obtained by varying the gas pressure between two copper blocks separated by a gap of 100 μm. This pressure is controlled by acting upon the temperature of a small sorption pump (activated charcoal) connected to the gap space. For a “high” sorption pump temperature, the gas previously adsorbed in the sorption pump is released to the gap between the two blocks, allowing a good thermal conduction through the gas (ON state). On the opposite, cooling the sorption pump allows a very good vacuum between the copper blocks, which efficiently break the thermal contact (OFF state). Experimental thermal characteristics (Conductance in the ON and OFF state, ON-OFF switching temperature) of such a “Gas Gap Heat Switch” are described using hydrogen or neon as exchange gas and are compared with theoretical calculations.     

Development of No-Vent™ liquid hydrogen storage system for space applications

A number of technological advances required to store and maintain normal-boiling-point and densified cryogenic liquids, including liquid hydrogen, under zero boil-off conditions in-space, for long periods of time, have been developed. These technologies include (1) thermally optimized compact cryogen storage systems that reduce environmental heat leak to the lowest-temperature cryogen, which minimizes cryocooler size and input power, and (2) actively-cooled shields that surround the storage systems and intercept heat leak. The processes and tools used to develop these technologies are discussed. A zero boil-off liquid hydrogen storage system technology demonstrator for validating the actively-cooled shield technology is presented.