Photocurrent response of the carbon nanotube-silicon heterojunction array

A highly ordered array of parallel, identical carbon nanotubes is grown non- lithographically in a bottom-up fabrication approach to form a heterojunction with a silicon substrate. Evidence of a space-charge separated region at the nanotube-silicon interface is present in the form of diode rectification and a closed-circuit zero-bias photocurrent in response to infrared light. Because carbon nanotubes are narrow bandgap semiconductors, their heterojunction with silicon was analysed spectrally via Fourier transform infrared photocurrent spectroscopy with the aim of investigating the suitability of this structure for infrared (IR) detector applications. IR photoresponse shows signs of temperature-dependent activation that is complex but consistent with estimates of the heterojunction barrier height. Considering the many interesting benefits and properties of carbon nanotubes, these results despite their earliness suggest that nanotube-silicon heterojunction systems could form the foundation for a new kind of infrared detection device.     

Ultrahigh-current field emission from sandwich-grown well-aligned uniform multi-walled carbon nanotube arrays with high adherence strength

We describe a new method to grow multi-walled carbon nanotube (MWCNT) arrays, which enable very high and stable macroscopic emission current density of 3.55?A?cm(-2) along with a scalable total emission current of more than 710?mA. A sandwich-growth technology was employed to synthesize vertically well-aligned MWCNT arrays in large areas and patterned uniformly by using microwave plasma chemical vapour deposition. A thick nickel layer was inserted between the silicon substrate and catalyst layer to achieve good adhesion between the MWCNTs and the substrate. Scanning electron microscope and transmission electron microscope investigations showed that well-structured, vertically aligned and uniform MWCNTs with perfect crystal lattices had been grown on lithographically predetermined sites. The root ends of MWCNTs adhered firmly to the nickel layer, establishing high electrical and thermal conductance of the MWCNTs to the substrate. This feature largely explains the large and stable emission current density of the MWCNT arrays.     

Carbon nanotubes initiate the explosion of porous silicon

Here we show that a mixture of multi-walled carbon nanotubes (MWCNTs) and ferrocene doped with sodium perchlorate, as an oxidant, can be combusted using a camera flash as an initiator. We optimize the MWCNT to oxidant ratio by monitoring the intensity and spectral characteristics of the light emission. In addition, we construct a novel nanostructured energetic material combining MWCNTs with porous silicon (pSi) impregnated with sodium perchlorate and show that pSi can be exploded using carbon nanotubes as photosensitive initiators.     

General theories for the electrical transport properties of carbon nanotubes

We have shown that the general theories of metals and semiconductors can be employed to understand the diameter and voltage dependency of current through metallic and semiconducting carbon nanotubes, respectively. The current through a semiconducting multiwalled carbon nanotube (MWCNT) is associated with the energy gap that is different for different shells. The contribution of the outermost shell is larger as compared to the inner shells. The general theories can also explain the diameter dependency of maximum current through nanotubes. We have also compared the current carrying ability of a MWCNT and an array of the same diameter of single wall carbon nanotubes (SWCNTs) and found that MWCNTs are better suited and deserve further investigation for possible applications as interconnects.     

铬酸溶液后处理增强碳纳米管的场发射特性

采用铬酸溶液对碳纳米管进行后处理,旨在修饰碳纳米管的表面形态及改变碳纳米管的表面结构,进一步增强碳纳米管的场发射特性.铬酸溶液后处理与传统以硝酸后处理的厅法不同之处在于,铬酸溶液可以更有效率地与非品质碳及碳纳米管发生化学反应.可以预期碳纳米管经过铬酸溶液处理后,碳纳米管的表而形态、化学组成及场发射特性会产生很大的变化.场发射的数据显示,经铬酸溶液处理20 min的碳纳米管场发射电流比未经过铬酸溶液处理的场发射电流有明显的增加.然而,长时间的铬酸溶液处理也会降低碳纳米管场发射特性.经铬酸溶液处理20min的碳纳米管场发射电流增强原因主要为适度的铬酸溶液处理可以改变碳纳米管的表面形态,使碳管的表面密度增大、场发射功函数降低.但过长时间的铬酸溶液后处理,又会造成碳纳米管数目减少及表面结构受到损害,导致碳纳米管场发射特性变差.     

Preparation and characterization of multi-walled carbon nanotube/hydroxyapatite nanocomposite film dip coated on Ti–6Al–4V by sol–gel method for biomedical applications: An in vitro study

In the present research, the introduction of multi-walled carbon nanotubes (MWCNTs) into the hydroxyapatite (HA) matrix and dip coating of nanocomposite on titanium alloy (Ti–6Al–4V) plate was conducted in order to improve the performance of the HA-coated implant via the sol–gel method. The structural characterization and electron microscopy results confirmed well crystallized HA–MWCNT coating and homogenous dispersion of carbon nanotubes in the ceramic matrix at temperatures as low as 500 °C. The evaluation of the mechanical properties of HA and HA/MWCNT composite coatings with different weight percentages of MWCNTs showed that the addition of low concentrations of MWCNTs (0.5 and 1 wt.%) had improved effect on the mechanical properties of nanocomposite coatings. Moreover, this in vitro study ascertained the biocompatibility of the prepared sol–gel-derived HA/MWCNT composite coatings.     

Nanocomposite based on modified multiwalled carbon nanotubes: Fabrication by an oriented spinning process and electrical conductivity

We have produced nanocomposite films consisting of modified multiwalled carbon nanotubes (MWCNTs) and a polymer (MWCNT/polymer weight ratio of 95/5). The nanocomposite has been applied to a paper substrate by an oriented spinning process from a liquid phase. The resistivity of the films has been measured as a function of temperature in the range 20–140°C along and across the preferential orientation direction of the nanotubes in the nanocomposite. The results point to an irreversible transition from semiconducting to metallic behavior of the conductivity of the films.     

Growth of spin-capable multi-walled carbon nanotubes and flexible transparent sheet films

Iron-catalyzed spin-capable multi-walled carbon nanotubes (MWCNTs) were grown on a SiO2 wafer by chemical vapor deposition, which was carried out at 780 degrees C using C2H2 and H2 gases. We fabricated a flexible transparent film using the spun MWCNTs. The MWCNT sheets were produced by being continuously pulled out from well-aligned MWCNTs grown on a substrate. The MWCNT sheet films were manufactured by simply carrying out direct coating on a flexible film or glass. The thickness of the sheet film decreased remarkably when alcohol was sprayed on the surface of the sheet. The alcohol spraying increased the transmittance and decreased the electrical resistance of the MWCNT sheet films. The sheets obtained after alcohol spraying had a resistance of -699 omega and a transmittance of 81%-85%. The MWCNT sheet films were heated by applying direct current. The transparent heaters showed a rapid thermal response and uniform distribution of temperature. In addition, we tested the field emission of the sheet films. The sheet films showed a turn-on voltage of -1.45 V/microm during field emission.     

Photovoltaic response of carbon nanotube-silicon heterojunctions: effect of nanotube film thickness and number of walls

We report on the multiwall carbon nanotube application as energy conversion material to fabricate thin film solar cells, with nanotubes acting as photogeneration sites as well as charge separators, collectors and carrier transporters. The device consists of a semitransparent thin film of nanotubes coating a n-type crystalline silicon substrate. Under illumination electron-hole (e-h) pairs, generated in the nanotubes and in the silicon substrate underneath, are split and charges are transported through the nanotubes (electrons) and the n-Si (holes). We found that a suitable thickness of the nanotube thin film, high density of Schottky junctions between nanotubes and n-Si and lowest number of nanotube walls are all fundamental parameters to improve the device incident photon to electron conversion efficiency. Multiwall carbon nanotubes have been synthesized by chemical vapour deposition in an ultra high vacuum chamber by evaporating a given amount of iron at room temperature and then exposing the substrate kept at 800 degrees C at acetylene gas. The amount of deposited iron is found to directly affect the nanotube size distribution (inner and outer diameter) and therefore the number of walls of the nanotubes.     

Flexible electroluminescent device with inkjet-printed carbon nanotube electrodes

Carbon nanotube (CNTs) inks may provide an effective route for producing flexible electronic devices by digital printing. In this paper we report on the formulation of highly concentrated aqueous CNT inks and demonstrate the fabrication of flexible electroluminescent (EL) devices by inkjet printing combined with wet coating. We also report, for the first time, on the formation of flexible EL devices in which all the electrodes are formed by inkjet printing of low-cost multi-walled carbon nanotubes (MWCNTs). Several flexible EL devices were fabricated by using different materials for the production of back and counter electrodes: ITO/MWCNT and MWCNT/MWCNT. Transparent electrodes were obtained either by coating a thin layer of the CNTs or by inkjet printing a grid which is composed of empty cells surrounded by MWCNTs. It was found that the conductivity and transparency of the electrodes are mainly controlled by the MWCNT film thickness, and that the dominant factor in the luminance intensity is the transparency of the electrode.     

Enhanced UV photoresponse of KrF-laser-synthesized single-wall carbon nanotubes/n-silicon hybrid photovoltaic devices

We report on the KrF-laser ablation synthesis, purification and photocurrent generation properties of single-wall carbon nanotubes (SWCNTs). The thermally purified SWCNTs are integrated into hybrid photovoltaic (PV) devices by spin-coating them onto n-Si substrates. These novel SWCNTs/n-Si hybrid devices are shown to generate significant photocurrent (PC) over the entire 250-1050 nm light spectrum with external quantum efficiencies (EQE) reaching up to ~23%. Our SWCNTs/n-Si hybrid devices are not only photoactive in the traditional spectral range of Si solar cells, but generate also significant PC in the UV domain (below 400 nm). This wider spectral response is believed to be the result of PC generation from both the SWCNTs themselves and the tremendous number of local p-n junctions created at the nanotubes/Si interface. To assess the prevalence of these two contributions, the EQE spectra and J-V characteristics of these hybrid devices were investigated in both planar and top-down configurations, as a function of SWCNTs' film thickness. A sizable increase in EQE in the near UV with respect to the silicon is observed in both configurations, with a more pronounced UV photoresponse in the planar mode, confirming thereby the role of SWCNTs in the photogeneration process. The PC generation is found to reach its maximum for an optimal the SWCNT film thickness, which is shown to correspond to the best trade-off between lowest electrical resistance and highest optical transparency. Finally, by analyzing the J-V characteristics of our SWCNTs/n-Si devices with an equivalent circuit model, we were able to point out the contribution of the various electrical components involved in the photogeneration process. The SWCNTs-based devices demonstrated here open up the prospect for their use in highly effective photovoltaics and/or UV-light sensors.     

Thermally activated reactions of multi-walled carbon nanotubes reinforced aluminum matrix composite during the thermal spray consolidation

The interfacial phenomena of multi-walled carbon nanotubes (MWCNTs) embedded in an Al matrix during high-velocity oxygen fuel (HVOF) spraying were investigated. The high thermal energy supplied from the high temperature gas flow of HVOF spraying activated the interfacial reactions of MWCNTs with oxygen and Al, such as MWCNT oxidation and aluminum carbide formation. Interfacial reactions deteriorated the contribution of the MWCNTs to the coating properties by destroying the intrinsic structure of the MWCNTs. In this study, the interfacial reaction mechanisms of the MWCNTs are discussed based on microstructural and thermodynamic analysis.     

Pyrolytic deposition of nanostructured titanium carbide coatings on the surface of multiwalled carbon nanotubes

Nanostructured titanium carbide coatings have been deposited on the surface of multiwalled carbon nanotubes (MWCNTs) by the MOCVD method with bis(cyclopentadienyl)titanium dichloride precursor. The obtained TiC/MWCNT hybrid materials were characterized by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. It is established that a TiC coating deposits onto the MWCNT surface with the formation of a core–shell (MWSNT–TiC) type structure.     

无黏结剂柔性Si/CNT/纤维素复合阳极及其电化学性能

硅/碳复合材料作为最具潜力的下一代阳极材料,受到广泛关注。为减少硅巨大膨胀所产生的应力,避免硅纳米颗粒的粉化,提高硅基锂离子电池的电化学性能,制备了一种多微孔结构的多壁碳纳米管(MWCNTs)纸,嵌入纳米硅制得Si/MWCNTs/纤维素复合柔性锂离子电池阳极。FESEM显示,纳米硅均匀地嵌入在MWCNTs构建的三维导电网络中,纳米硅和导电载体具有良好的接触,使得界面电阻大幅下降,同时纳米硅在电池充放电过程中具有足够的膨胀空间,保证了材料的结构稳定性和化学稳定性。电化学检测显示,其首次放电比容量达到2024 mAh/g,循环30次后比容量维持在850 mAh/g,展示出良好的循环稳定性和较高的比容量。同时,其制作工艺相比传统涂敷类阳极得以简化,可操作性高,易于实现产业化。     

Biocompatibility of multi-walled carbon nanotubes grown on titanium and silicon surfaces

Cell adhesion and cell viability of aligned multi-walled carbon nanotube (MWCNT) films were verified using Fibroblast L929 mouse cells. The MWCNTs were produced by a microwave plasma chemical vapor deposition (2.45 GHz) on silicon (Si), with a nickel catalyst, and titanium (Ti), with an iron catalyst. MTT assay and cellular adhesion were used for biocompatibility tests (ISO 10993-5). The results show very high cell viability and many layers of cells adhered on the surface formed by the nanotube tips at films grown on silicon surfaces. The MWCNT grown on Ti surfaces presented lower cell viability and a reduced number of cells on the surface formed by the nanotube tips. The different behavior is most probably related to excess iron contamination present in the case of titanium substrate, while nickel catalyst is probably enclosed by the nanotubes.     

Transformation of carbon nanotubes to diamond in microwave hydrogen plasma

Multiwall carbon nanotubes (MWCNTs), synthesized by microwave plasma enhanced chemical vapor deposition, were used as the precursor to synthesize diamond in a pure hydrogen microwave discharge. Diamond-scratched silicon wafers, with and without precoated MWCNTs, were placed side by side on a substrate holder. Diamond was formed on both wafers with the consumption of MWCNTs. The present results suggest that the solid–gas–solid transformation mechanism is involved in this process.     

碳纳米管纸/纳米硅复合电极的锂离子电池性能

采用纳米硅和多壁碳纳米管(MWCNTs)复合材料作为活性材料,以纸纤维为基体,MWCNTs为导电剂制得的MWCNTs导电纸代替铜箔集流体应用于硅基锂离子电池。采用扫描电子显微镜、透射电子显微镜、恒流放电测试、电化学阻抗对复合材料的形貌和电化学性能进行分析。结果表明,采用MWCNTs导电纸-纳米硅复合的锂离子电池在80mA/g的电流密度下,循环50次后比容量达到约1000mAh/g,在2000mA/g大电流密度下仍保持好的循环稳定性。     

Ferroelectric-carbon nanotube memory devices

One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNT-inorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Low-loss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Current-voltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectric-carbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices.     

Electrochemically grown Pd nanoparticles used for synthesis of carbon nanotube by microwave plasma enhanced chemical vapor deposition

Pd nanoparticles of well-defined shapes with face centered cubic structure were grown electrochemically on silicon substrates with high degree of reproducibility. As direct application of these electrochemically grown Pd nanostructures they have been used as catalyst for the growth of multi wall carbon nanotube (MWCNT). It is observed that the MWCNTs are filled with a Pd based material during growth by microwave plasma enhanced chemical vapor deposition (MPECVD) technique. High-resolution transmission electron microscopy, used to study the material inside MWCNT suggests the formation of PdH0.649 or Pd2Si during the growth of carbon nanotube. Raman spectroscopy has been used to study the structure of the MPECVD grown carbon nanotubes.     

Carbon nanotube based photocathodes

This paper describes a novel photocathode which is an array of vertically aligned multi-walled carbon nanotubes (MWCNTs), each MWCNT being associated with one p-i-n photodiode. Unlike conventional photocathodes, the functions of photon-electron conversion and subsequent electron emission are physically separated. Photon-electron conversion is achieved with p-i-n photodiodes and the electron emission occurs from the MWCNTs. The current modulation is highly efficient as it uses an optically controlled reconfiguration of the electric field at the MWCNT locations. Such devices are compatible with high frequency and very large bandwidth operation and could lead to their application in compact, light and efficient microwave amplifiers for satellite telecommunication. To demonstrate this new photocathode concept, we have fabricated the first carbon nanotube based photocathode using silicon p-i-n photodiodes and MWCNT bunches. Using a green laser, this photocathode delivers 0.5?mA with an internal quantum efficiency of 10% and an I(ON)/I(OFF) ratio of 30.