Facile fabrication of NiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>H<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> films and their unique electrochromic properties

The electrochromic (EC) NiO _x H _y films were fabricated through a facile sol–gel method. The formation of high quality NiO _x H _y films came from adding the xerogel back into the sol and prolonging the annealing time at gradually increasing temperature up to 250 °C. Scanning electron microscopy and atomic force microscopy characterizations indicated films were compact, homogenous, and smooth. Glance angle X-ray diffraction investigation testified NiO _x H _y films were of poor crystallization. The Fourier transform infrared, and thermogravimetry and differential thermal analysis showed that films contained the mixture of NiO, Ni(OH)₂, NiOOH, water, and organic substance. With the increasing of the xerogel ratio, the optical absorbance and reflectance of films had larger differences between the colored and bleached state, respectively. The film with the xerogel ratio of 1:5 showed excellent EC properties with a transmittance contrast as high as 60.88% at λ = 560 nm, which was higher than other sol–gel nickel oxide films reported.     

Optical,Structural, and Photocarrier Studies of Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(CdTe)<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>O<Subscript><Emphasis Type="Italic">z</Emphasis></Subscript> Thin Films

In this research quaternary alloy thin films made of Cu, CdTe, and O have been grown and characterized. The samples used in this investigation were grown simultaneously by reactive RF co-sputtering and by introducing oxygen and argon in the chamber during growth and changing the power in the Cu target from 10 W to 50 W. The carrier distribution as a function of the position was studied by using energy dispersive spectroscopy–scanning electronic microscopy (EDS–SEM), micro-Raman spectroscopy, and photocarrier images. Structural characterization was carried out by using X-ray diffraction. According to the results, a lateral carrier distribution was found in all samples and a new phase identified as Cu₂Te was revealed for samples grown at 50 W.     

Thermodynamic modeling of BC<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> chemical vapor deposition from mixtures of <Emphasis Type="Italic">N</Emphasis>-trimethylborazine and nitrogen

Thermodynamic modeling of the chemical vapor deposition of boron-carbonitride-based films in the B-C-N-H-O system using mixtures of N-trimethylborazine and nitrogen is carried out for reduced pressures (13.3 and 1.33 Pa) and a wide temperature range (300–1300 K). The source of oxygen impurities in this system is a residual pressure of 0.40 Pa. The results indicate that films of various compositions can be grown. The conditions for the deposition of BC _x N _y films are identified.     

Synthesis of Zirconium Diboride Films and ZrB<Subscript>2</Subscript>/BC<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> Heterostructures

Using mechanochemical synthesis, we have prepared zirconium borohydride, Zr(BH₄)₄, as a precursor for ZrB₂ film growth by chemical vapor deposition. We have carried out the thermodynamic modeling of phase formation processes in the Zr–B–(N)–H and Zr–B–(N)–H–O systems in a wide temperature range, from 100 to 2500°C, at various p_(H2)/p_(Zr(BH4)4) and p_(NH3)/p_(Zr(BH4)4) partial pressure ratios in the starting gas mixtures. A process has been proposed for the growth of zirconium diboride films by Zr(BH₄)₄ decomposition using two techniques: chemical vapor deposition and plasma-enhanced chemical vapor deposition. We also developed a process for the growth of multilayer ZrB₂-and BC _x N _y -based structures.     

Design of active and stable oxygen reduction reaction catalysts by embedding Co<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> nanoparticles into nitrogen-doped carbon

The oxygen reduction reaction (ORR) is essential in research pertaining to life science and energy. In applications, platinum-based catalysts give ideal reactivity, but, in practice, are often subject to high costs and poor stability. Some cost-efficient transition metal oxides have exhibited excellent ORR reactivity, but the stability and durability of such alternative catalyst materials pose serious challenges. Here, we present a facile method to fabricate uniform Co _x O _y nanoparticles and embed them into N-doped carbon, which results in a composite of extraordinary stability and durability, while maintaining its high reactivity. The half-wave potential shows a negative shift of only 21 mV after 10,000 cycles, only one third of that observed for Pt/C (63 mV). Furthermore, after 100,000 s testing at a constant potential, the current decreases by only 17%, significantly less than for Pt/C (35%). The exceptional stability and durability results from the system architecture, which comprises a thin carbon shell that prevents agglomeration of the Co _x O _y nanoparticles and their detaching from the substrate.

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Synthesis and microwave dielectric properties of Zn<Subscript>1+<Emphasis Type="Italic">x</Emphasis></Subscript>Nb<Subscript>2</Subscript>O<Subscript>6+<Emphasis Type="Italic">x</Emphasis></Subscript>

We have studied the formation of zinc niobate, ZnNb₂O₆, with the columbite structure and the microstructure and microwave dielectric properties of Zn_1+x Nb₂O_6+x ceramics. The results demonstrate that, in the range 0.005 ≤ x ≤ 0.03, the excess zinc reduces the porosity of the material and increases its microwave quality factor Q. For x ≥ 0.03, the Q of the ceramics decreases because of the formation of an additional, zinc-enriched phase. Sintering in an oxygen atmosphere is shown to improve the dielectric properties of stoichiometric ZnNb₂O₆.     

Electrical and photoelectric properties of electrodeposited <Emphasis Type="Italic">n</Emphasis>-Si/<Emphasis Type="Italic">n</Emphasis>-Cd<Subscript>1 - <Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>x</Subscript>S heterojunctions

n-Si/n-Cd_{1 - x} Zn_xS heterojunctions are produced by electrodepositing Cd_{1 - x} Zn_xS (0 x 0.6) films on silicon substrates, and their electrical and photoelectric properties are studied. The results demonstrate that the spectral response of the heterojunctions depends strongly on the film composition and heat-treatment conditions. The highest photosensitivity is achieved at x = 0.6 by heat treatment at 350°C for 7 min: V _OC = 0.5 V and I _SC = 3.8 mA/cm² under illumination of 1500 lx at 300 K.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 276–280.Original Russian Text Copyright © 2005 by Mamedov, Gasanov, Amirova.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Photoacoustic Studies of Cd<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>Be<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se Mixed Crystals

This paper reports the results of photoacoustic measurements of Cd_1-xBe_xSe mixed crystals grown by the high pressure Bridgman method with varying concentrations of Be (0.1 < x < 0.2). For examining continuous wave photoacoustic spectra, a piezoelectric transducer (PZT) and an open cell were used. An increase of the energy gap with increasing x has been observed. The thermal diffusivity values were estimated using the dependence of the amplitude and phase of the PA signal on the light modulation frequency.Paper presented at the Fifteenth Symposium on Thermophysical Properties, June 22–27, 2003, Boulder, Colorado, U.S.A.     

Y-junction bamboo-like CN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> nanotubes

The method for the production of multiwall Y-junction bamboo-like CN _x nanotubes by the resistive heating of graphite is described. Different branched bamboo-like CN _x nanotubes have been observed. The possible mechanism of the formation of branched nanotubes is proposed.     

Selective oxidation mediated synthesis of unique Se<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> nanotubes,their assembled thin films and photoconductivity

One-dimensional hollow nanostructures have potential applications in many fields and can be fabricated using various methods. Herein, a selective-oxidation route for the synthesis of unique Te _x Se _y nanotubes (STNTs) with a controlled morphology using Te _x Se _y @Se core–shell nanowires (TSSNWs) as a template is reported. Because of the lower redox potential of TeO₂/Te compared to that of H₂SeO₃/Se, the Te in TSSNWs can be preferentially oxidized by an appropriate oxidant of HNO₂ to form STNTs. The inner diameters and wall thicknesses of the STNTs can be tuned by modulating the core diameters and shell thicknesses of the TSSNWs, respectively. The STNTs can be assembled into a monolayer composed of well-arranged nanotubes using the Langmuir–Blodgett technique. A device based on films stacked with 10 STNT monolayers was fabricated to investigate the photocoductivity of the STNTs. The STNTs exhibited a good photoresponse over the whole ultraviolet–visible spectrum, revealing their potential for application in optoelectronic devices.

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Synthesis and properties of Na<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>CoO<Subscript>2</Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0.55, 0.89) oxide thermoelectrics

Na_xCoO₂ (x = 0.55, 0.89) sodium cobaltites have been prepared by solid-state reactions; their structural parameters have been determined; their microstructure has been studied; and their thermal (thermal expansion, thermal diffusivity, and thermal conductivity), electrical (electrical conductivity and thermoelectric power), and functional (power factor, thermoelectric figure of merit, and self-compatibility factor) properties have been investigated in air at temperatures from 300 to 1100 K. The results demonstrate that, with increasing sodium content, the electrical conductivity and thermoelectric power of the materials increase and their thermal conductivity decreases. As a result, the power factor and thermoelectric figure of merit of the Na_0.89CoO₂ ceramic at a temperature of 1100 K reach 0.829 mW/(m K²) and 1.57, respectively. The electron and phonon (lattice) contributions to the thermal conductivity of the ceramics have been separately assessed, and their linear thermal expansion coefficients have been evaluated.     

Influence of hydrogen on the thermoelectric voltage signal in a Pt/WO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/6<Emphasis Type="Italic">H</Emphasis>-SiC/Ni/Pt layered structure

The possibility of detecting H₂ by registering the thermal electromotive force signal, which arises between the surfaces of 6H-SiC plates with a thickness of 400 μm, is established. The working surface of the plates is modified by deposition of a WO _x film and catalytic Pt. An ohmic contact (Ni/Pt) is created on the rear surface of the plate, and this surface is maintained at a stabilized temperature of 350°C. The temperature gradient through the plate thickness arises due to the cooling of the working surface with the air medium. The delivery of H₂ into this medium up to a concentration of 2% gives rise to a 15-fold increase in the electric signal, which considerably exceeds the Pt/WO _x /SiC/Ni/Pt system’s response registered in the usual way by measuring the current–voltage dependence. In this case, an additional power source for the registration of the thermal electromotive force is not required.     

Thermal stability of CrN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> nanometric coatings deposited on stainless steel

Thin CrN _x coatings are often used as protective coatings for steel. In these applications, coated parts might be subjected to high temperatures that can alter the coatings structural and mechanical properties. In this work, the properties of nanometric CrN _x coatings deposited by reactive magnetron sputtering on AISI 304L stainless steel were studied by transmission electron microscopy, glazing incident X-ray diffraction, Atomic Force Microscopy, and nanoindentation. The effect of annealing, both in air and vacuum, on the coating crystal structure, surface morphology and hardness were also investigated. It was found that annealing in vacuum-induced phase transformation from CrN to Cr₂N, while after annealing in air only Cr₂O₃ phase was present. Surface roughness did not increase for annealing in vacuum. CrN _x coatings with higher Cr₂N phase content showed lower roughness increase for annealing in air. Measured hardness was >10 GPa for as-deposited CrN _x samples. An increase in hardness up to >20 GPa was found for vacuum-annealed samples.     

Synthesis of nanostructured Pt<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ni/C and Pt<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Co/C catalysts and their activity in the reaction of oxygen electroreduction

Nanostructured Pt _x Ni/C and Pt _x Co/C catalysts (1 ≤ x ≤ 3) containing from 27 to 40 wt % of metal with the average size of metal (alloy) particles from 2.6 to 4.7 nm are obtained using the methods of liquid-phase synthesis. Addition of a doping component is found to yield a decrease in the average nanoparticle sizes and an improved activity of materials in oxygen electroreduction reactions. The obtained catalysts are characterized by high specific activity as compared to commercial Pt/C materials. The stability of electrocatalysts to selective dissolution of the doping component is evaluated.     

Bandgap-tunable lateral and vertical heterostructures based on monolayer Mo<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>W<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>2</Subscript> alloys

The fabrication of heterostructures of two-dimensional semiconductors with specific bandgaps is an important approach to realizing the full potential of these materials in electronic and optoelectronic devices. Several groups have recently reported the direct growth of lateral and vertical heterostructures based on monolayers of typical semiconducting transition metal dichalcogenides (TMDCs) such as WSe₂, MoSe₂, WS₂, and MoS₂. Here, we demonstrate the single-step direct growth of lateral and vertical heterostructures based on bandgap-tunable Mo_1-x W _x S₂ alloy monolayers by the sulfurization of patterned thin films of WO₃ and MoO₃. These patterned films are capable of generating a wide variety of concentration gradients by the diffusion of transition metals during the crystal growth phase. Under high temperatures, this leads to the formation of monolayer crystals of Mo_1-x W _x S₂ alloys with various compositions and bandgaps, depending on the positions of the crystals on the substrates. Heterostructures of these alloys are obtained through stepwise changes in the ratio of W/Mo within a single domain during low-temperature growth. The stabilization of the monolayer Mo_1-x W _x S₂ alloys, which often degrade even under gentle conditions, was accomplished by coating the alloys with other monolayers. The present findings demonstrate an efficient means of both studying and optimizing the optical and electrical properties of TMDC-based heterostructures to allow use of the materials in future device applications.

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The Activation Energy <Emphasis Type="Italic">U</Emphasis>(<Emphasis Type="Italic">T</Emphasis>,<Emphasis Type="Italic">H</Emphasis>) in Y-based Superconductors

Based on the Arrhenius equation, a method to calculate the activation energy from the resistance transition is proposed for high temperature superconductors. This method is applied to the Y-based superconductors. The activation energy is found to be U(T,H)∼(1−T/T _c )^4.8(H/H ₀)^−3.8 of YBCO crystal, and U(T,H)∼(1−T/T _c )^3.3(H/H ₀)^−2.2 of Er doped MTG YBCO crystal, respectively. With the obtained activation energy U(T,H), the lower part of the experimental curve ρ(T,H) and its derivative can be reproduced.      

Thermal Transport Properties of Cd<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>Mg<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se Mixed Crystals Measured by Means of the Photopyroelectric Method

The concentration dependence of the thermal conductivity and thermal diffusivity were determined for Cd_1-x Mg _x Se mixed crystals in the temperature range between 20 ^◦C and 40 ^◦C. To determine the thermal transport properties, the photopyroelectric setup in the back detection configuration was constructed. In the concentration range 0< x <0.36, both thermal conductivity and thermal diffusivity were found to decrease with increasing magnesium concentration as well as with increasing temperature. The observed concentration dependence is discussed in the framework of the Adachi model.     

Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> quantum wires

The exciton properties of Si/Si _1-x Ge _x cylindrical quantum wires (QWRs) are calculated using the variational method and taking into account the existence of an interface layer between the materials. We consider two possibilities for the conduction band lineup, type-I and type-II. Our numerical results show that an interfacial fluctuation of 15Å in a Si _0.85 Ge _0.15 (Si_0.70Ge_0.30) type-I (type-II) wire of 50Å wire radius leads to an exciton energy blue shift of the order of 10 (10) meV.     

Project of laser-pumped quantum <Emphasis Type="Italic">M</Emphasis><Subscript><Emphasis Type="Italic">X</Emphasis></Subscript> magnetometer

The possibility of creating a new scheme of a laser-pumped quantum magnetometric device based on a double-beam M _X magnetometer is considered. The proposed system ensures the simultaneous measurement of the modulus of the Earth’s magnetic field vector (with an absolute accuracy of 0.02 nT) and two angles of deviation of this vector with an absolute accuracy and sensitivity of not worse than 0.4″ (0.1 nT) at a measurement time of τ = 1 s. In contrast to the known analogous systems, the proposed scheme does not require generating additional magnetic fields.     

Nernst Signal in High-<Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> Superconductors

The time-dependent Ginzburg–Landau equation with thermal noise is used to calculate the Nernst signal e _N , describing the Nernst effect, in type-II superconductor in the vortex-liquid regime. The Gaussian method used is an elaboration of the Hartree–Fock method. An additional assumption often made in analytical calculations that only the lowest Landau level significantly contributes to physical quantities of interest in the high-field limit is lifted by including all the Landau levels. The values of e _N are in good quantitative agreement with experimental data for temperature close to T _c on Bi₂Sr₂CaCu₂O_8+δ and Bi₂Sr₂Ca₂Cu₃O_10+δ .