淀粉为造孔剂制备碳化硅多孔陶瓷

以微米碳化硅基体,氧化铝和氧化钇为烧结助剂,淀粉为造孔剂,采用无压烧结技术制备碳化硅多孔陶瓷.通过测试合成多孔陶瓷的密度、收缩率、力学强度以及扫描电子显微镜(SEM)和X-射线衍射(XRD)等研究了不同造孔剂含量对SiC粉体的力学性能、微观形貌和物相的影响.研究表明:随造孔剂含量的升高,碳化硅陶瓷密度和强度降低,气孔率增加,而造孔剂含量对碳化硅陶瓷的物相组成基本没有影响.     

等静压成型碳化硅多孔陶瓷

介绍了等静压成型碳化硅多孔陶瓷的制备技术,研究了高温结合剂加入量及成型粘合剂的加入量对制品的成型性能、气孔率、孔结构、强度等性能的影响.     

聚碳硅烷粘结法低温制备碳化硅多孔陶瓷

分别以平均粒径为10μm和20μm的两种规格碳化硅(SiC)粉末为原料、聚碳硅烷(PCS)为粘结剂,通过包混、过筛、模压成型、1000℃热解等工序制备了SiC多孔陶瓷,研究了PCS含量对SiC多孔陶瓷微观形貌、线收缩率、孔隙率与抗弯强度的影响,并对两种规格粉末制备的SiC多孔陶瓷性能进行了对比。结果表明:随着PCS含量的增加,两种规格粉末制备的SiC多孔陶瓷微观形貌都逐渐变得致密,当PCS含量为13%时,两种规格粉末制备的多孔陶瓷都出现了微观裂纹。随着PCS含量的增加,两种规格粉末制备的SiC多孔陶瓷孔隙率都逐渐降低,线收缩率都逐渐增大,抗弯强度先增大后降低,在PCS含量为10%时,平均粒径为10μm与20μm的SiC粉末制备的多孔陶瓷抗弯强度取得最大值,分别为31.6MPa与29.0MPa。     

发泡工艺制备多孔陶瓷研究进展

闭孔型多孔陶瓷是一类重要的耐温隔热材料,由于其具有很好的化学稳定性、较低的热传导等优良特性,被广泛应用于众多领域。发泡工艺是制备闭孔型多孔陶瓷的主要方法,本文综述了发泡工艺制备多孔陶瓷的孔形成机理、发泡剂的类型及其近年来在多孔陶瓷制备领域的研究进展。     

碳化硅多孔陶瓷的制备工艺比较

多孔碳化硅陶瓷由于具有优良的高温强度、耐磨性、耐腐蚀性以及抗热震性而得到越来越广泛的关注.随着科技的发展,其已在环境保护、过滤分离、尾气吸收、吸声降噪、生物医学、航空航天和能源化工等方面发挥着重要的作用.本文着重分析了多孔碳化硅陶瓷的传统制备工艺与先进制备工艺的优缺点,并对其未来的制备工艺作出展望.     

发泡法制备莫来石多孔陶瓷

以碳化硅及碳酸钙为造孔剂,采用发泡–注凝成型结合添加造孔剂法制备了具有大孔–介孔复合孔结构的莫来石多级孔陶瓷,研究了SiC加入量对莫来石多孔陶瓷常温物理性能和高温隔热性能的影响。结果表明:以莫来石粉体为主要原料,以CaCO₃和SiC为造孔剂,采用发泡结合添加造孔剂法可制备具有较高闭气孔率的莫来石多孔陶瓷;当SiC加入量为4%(质量分数)时,所制备试样的导热系数最低,其孔隙率约为69.9%。     

多孔碳化硅泡沫陶瓷的制备与表征

以碳化硅为主要原料,通过调整泥浆的粘度,采用有机前驱体浸渍成型法,在1400℃下烧制成了多孔碳化硅泡沫陶瓷。研究表明：样品断面孔呈三维立体网状,孔壁厚薄适宜,气孔较大且分布均匀,气孔率高,孔径在30μm以下,主晶相为SiC和SiO2,前驱体经过处理后,样品的抗折强度平均提高了0．615MPa,挂浆量也有所提高。     

碳化硅-堇青石多孔陶瓷的制备及其性能

以碳化硅粉末、高岭土和滑石等为原料,按堇青石的化学计量比设计原料配比,制备了堇青石理论生成量分别为0、10%、15%、20%、100%的碳化硅-堇青石多孔陶瓷,测定了试样的抗折强度、显气孔率和热膨胀系数,并分别用XRD和SEM分析了试样的晶相组成和断面形貌。结果表明:与碳化硅多孔陶瓷相比,碳化硅-堇青石多孔陶瓷的抗折强度显著提高,热膨胀系数明显降低,但显气孔率有所降低。SEM分析结果表明:碳化硅-堇青石多孔陶瓷中碳化硅颗粒排列较紧密,断面呈“网格状”结构;而在多孔碳化硅陶瓷中,晶粒形貌清晰且排列较疏松,气孔平均孔径较大。     

采用发泡-流延成型工艺制备多孔莫来石发泡陶瓷

以氧化铝微粉为原料,聚丙烯酰胺为分散剂,脂肪醇聚氧乙烯醚硫酸钠(AES)为发泡剂,氯化铵为固化剂,硅溶胶为硅源和结合剂,采用发泡-流延成型工艺制备多孔莫来石发泡陶瓷。探究了脂肪醇聚氧乙烯醚硫酸钠(AES)发泡剂的添加量(质量分数分别为0.5%、1%、2.5%、3%、3.5%和5%)和烧结温度(1 450、1 500、1 550、1 600和1 700℃)对发泡陶瓷的体积密度、耐压强度、显气孔率以及显微形貌的影响。结果表明:随着发泡剂AES添加量的增加,试样的体积密度和耐压强度先降低后增加,显气孔率先升高后降低。当发泡剂加入量为3%(w)时,烧结温度为1 450℃时,莫来石相基本未形成。随着烧结温度升高,刚玉和方石英原位反应生成莫来石。发泡剂AES的添加量3%(w)、烧结温度1 550℃为发泡陶瓷最优的制备条件。此时,体积密度为0.25 g·cm-3,耐压强度为4.7 MPa,显气孔率为56.4%,800℃下的热导率为0.095 W·m-1·K-1,满足T/CECS 480—2017《发泡陶瓷保温板应用技术规程》中规定的发泡陶瓷保温隔热板Ⅳ型主要性能指标。     

High-Strength Porous Silicon Carbide Ceramics by an Oxidation-Bonding Technique

Porous silicon carbide (SiC) ceramics were fabricated by an oxidation-bonding process in which the powder compacts are heated in air so that SiC particles are bonded to each other by oxidation-derived SiO₂ glass. Because of the crystallization of amorphous SiO₂ glass into cristobalite during sintering, the fracture strength of oxidation-bonded SiC ceramics can be retained to a relatively high level at elevated temperatures. It has been shown that the mechanical strength is strongly affected by particle size. When 0.6 μm SiC powders were used, a high strength of 185 MPa was achieved at a porosity of ∼31%. Moreover, oxidation-bonded SiC ceramics were observed to exhibit an excellent oxidation resistance.     

Thermal Shock Behavior of Porous Silicon Carbide Ceramics

Using the water-quenching technique, the thermal shock behavior of porous silicon carbide (SiC) ceramics was evaluated as a function of quenching temperature, quenching cycles, and specimen thickness. It is shown that the residual strength of the quenched specimens decreases gradually with increases in the quenching temperature and specimen thickness. Moreover, it was found that the fracture strength of the quenched specimens was not affected by the increase of quenching cycles. This suggests a potential advantage of porous SiC ceramics for cyclic thermal-shock applications.     

造孔剂羧甲基纤维素（CMC）对制备多孔碳化硅陶瓷的影响

以Y2O3-Al2O3为复合烧结助剂,SiC为主料,加入羧甲基纤维作为造孔剂,制备了多孔陶瓷。研究了CMC含量对复合材料结构和力学性能的影响,采用SEM对复合材料的断口形貌进行分析。结果表明,反应烧结后当CMC的百分含量为12.5%时,试样的微观骨架较完整、孔的形状较规则分布较均匀、综合力学性能较好。     

氧化反应结合SiC基陶瓷的制备与性能

本文采用反应结合制备方法,通过对坯体进行预氧化使ＳｉＣ颗凿表面氧化形成ＳｉＯ２,而后在烧成中与添中剂ＡＩ２Ｏ３－Ｙ２Ｏ３反应,使坯体气化率减少,制备了多孔ＳｉＣ基陶瓷。文章探讨了坯体中ＳｉＣ的氧化特征、反应结合过程和相变化以及它们对烧结体性能的影响。     

高比表面积碳化硅的制备及表征

以糠醇为碳源,正硅酸乙酯为硅源,硝酸钴为催化剂,含氢硅油为结构助剂制备碳化硅前驱体,通过溶胶-凝胶和碳热还原的方法制备出高比表面积碳化硅。采用XRD、FTIR、SEM、HRTEM及BET对所制备的样品进行表征。结果表明,所得碳化硅具有高的比表面积127 m2/g;含氢硅油的特殊结构有利于形成多孔碳化硅;所得碳化硅具有特殊的光致发光性能。     

Mechanism of Material Removal from Silicon Carbide by Carbon Dioxide Laser Heating

The mechanism of material removal from SiC by CO₂ laser heating was studied using sintered and single-crystal α-SiC. Removal rate and width of the groove showed maxima when plotted as a function of translation speeds. Groove depth decreased as the translation speed of samples increased. Similar results were obtained if argon or air was used as gas assist, which indicated that the material removal mechanism is induced dissociation of SiC. Microstructure of the material deposited in and outside of the groove was studied by SEM. At low scanning speeds, columnar grains 10 to 50 μm long appeared. As the scanning speed increased, columnar grains became smaller and finally only irregular polycrystalline particles were observed. By using Raman spectroscopy, Auger analysis, and X-ray diffraction, phases inside and outside the groove were identified as Si, β-SiC, C, and SiO₂. Columnar grains were identified as β-SiC covered with thin layers of C, Si, and SiO₂. Slow scanning speeds enhanced the growth of β-SiC. At slow scanning speed, free silicon was always found in the grooves of lased single crystals but not in the grooves of lased sintered SiC. It can be concluded that the mechanism of material removal from silicon carbide by CO₂ laser heating is a vaporization process, and material found in the groove and on the surface near the groove is formed by condensation from the vapor.     

多孔低介电氧化硅陶瓷材料的制备

采用氧化硅为原料,木屑作为造孔剂制备了多孔的氧化硅陶瓷材料。借助于气孔率测试、抗弯强度测试、介电性能测试和SEM测试手段分析了造孔剂和烧结助剂的添加量对材料性能的影响。结果表明:加入BN作为添加剂烧成的氧化硅抗弯强度最大可达到14.80MPa。加入木屑作为造孔剂制备的陶瓷可以形成明显的气孔,气孔率最高可达到48.40%,介电常数最低可以达到3.0。     

Preparation and Properties of Porous Aluminum Nitride–Silicon Carbide Composite Ceramics

Microporous two-phase AlN–SiC composites were prepared using Al₄C₃ and either Si (N₂ atmosphere) or Si₃N₄ (Ar atmosphere) as precursors. The reaction mechanisms of the two synthesis routes and the effect of processing conditions on reaction rate and the material microstructures were demonstrated. The exothermic reaction between Si and Al₄C₃ under N₂ atmosphere was shown to be a simple processing route for the preparation of porous two-phase AlN–SiC materials. The homogeneous two-phase AlN–SiC composites had a grain size in the range of 1–5 μm, and the porosity varied in the range of 36%–45%. The bending strength was 50–60 MPa, in accordance with the high porosity.     

Polymeric Routes to Silicon Carbide

Several classes of organosilicon polymers are effective precursors for silicon carbide ceramic compositions. These include polydimethylsilane (via a two-step process), ‘polysilastyrene’, polycarbosilazanes or polysilazanes, and certain siloxanes, plus the branched polycarbosilanes, branched polysilahydrocarbons, and vinylic polysilanes developed at Union Carbide. The latter three classes are prepared by active metal dechlorinations of appropriate chlorosilane blends, leading to recognition of branching at backbone silicon atoms (either as prepared or during processing) as a prerequisite for obtaining useful ceramic yields. Fundamental reactivity differences between the active metals (potassium and sodium) allow the preparation of sodium-derived vinylic polysilanes. The latter offer certain economic and performance advantages as ceramic precursors.