NiFe／Cu和NiFe／Mo多层膜的界面结构与巨磁电阻

采用磁控溅射方法制备了ＮｉＦｅ／Ｃｕ和ＮｉＦｅ／Ｍｏ多层膜。测量了厚度不同的Ｃｕ层和Ｍｏ层多层膜的磁性和磁电阻,并用电镜分析了部分ＮｉＦｅ／Ｃｕ多层膜样品。测量到ＮｉＦｅ／Ｃｕ多层膜的室温巨磁电阻随Ｃｉ层厚度振荡的第一、二、三峰。而在ＮｉＦｅ／Ｍｏ多层膜中未发现巨磁电阻效应。讨论了多层膜的界面结构对巨磁电阻效应的影响。     

Cu层和Mo层对NiFe多层膜巨磁电阻（GMR）的影响

采用磁控溅射方法制备了ＮｉＦｅ／Ｃｕ和ＮｉＦｅ／Ｍｏ两个系列的多层膜，进行了结构，磁性和磁电阻测量，并对部分ＮｉＦｅ／Ｃｕ多层膜样品作了电镜分析，对于ＮｉＦｅ／Ｃｕ多层膜，在室温下的测量到巨磁电阻随Ｃｕ层厚度振荡的第一，二三峰。在ＮｉＦｅ／Ｍｏ多层膜样品中未发现巨磁电阻效应，讨论了非磁性 多层膜的磁性，界面结构和巨磁电阻效应。     

NiO／NiFeCo／Cu／NiFeCo自旋阀结构的巨磁电阻效应及影响因素的研究

用电子蒸发的方法制备ＮｉＯ／ＮｉＦｅＣ／Ｃｕ／ＮｉＦｅＣｏ自旋阀多层膜,通过磁场中退火得到好的偏置型自旋阀ＧＭＲ效应。通过对制备态以及磁场退火后样品的ＭＲ曲线的研究,讨论了交换耦合作用,单层磁性能以及层间耦合作用对材料ＧＭＲ效应的大小和磁场灵敏度的影响,得出提高交换耦合作用,改善单层磁性能和尽可能减小层间耦合将有得于得到高性能的偏置型自旋阀ＧＭＲ材料的结论。     

NiO／Co／Cu／Co自旋阀中反铁磁NiO钉扎作用的研究

本文通过研究不同方向外加磁场下ＮｉＯ７０ｎｍ／Ｃｏ５．５ｎｍ／Ｃｕ３．５ｎｍ／Ｃｏ５．５ｎｍ自旋阀结构中磁电阻的变化,探讨了ｉＯ反铁磁层对相邻的Ｃｏ层的钉扎作用。研究发现,材料中的钉扎方向是唯一确定的,只有沿着钉扎方向增大外场,才能获得高的巨磁电阻效应和磁灵敏度。     

NiFe／Cu多层膜的热处理研究

针对用磁控溅射方法制备的ＮｉＦｅ／Ｃｕ多层膜进行了热处理研究，经退火后，ＮｉＦｅ／Ｃｕ多层膜的磁电阻有了显著的变化，在２５０℃的最佳退火下，最大磁电阻变化率为５．２％。     

NiO/Co/Cu/Co自旋阀中反铁磁NiO层钉扎作用的研究

本文通过研究不同方向外加磁场下ＮｉＯ７０ｎｍ／Ｃｏ ５．５ｎｍ／Ｃｕ ３．５ｎｍ／Ｃｏ ５ ．５ｎｍ 自旋阀结构中磁电阻的变化,探讨了ＮｉＯ 反铁磁层对相邻的Ｃｏ 层的钉扎作用。研究发现,材料中的钉扎方向是唯一确定的,只有沿着钉扎方向反向增大外场,才能获得高的巨磁电阻效应和磁灵敏度。     

NiFe和NiFe／Cr／NiFe薄膜的磁电阻特性与膜厚关系

本文研究了采用离子束溅射技术制备的ＮｉＦｅ薄膜及层状结构ＮｉＦｅ／Ｃｒ／ＮｉＦｅ薄膜的磁电阻特性与膜厚的关系。用四探针法测量薄膜的磁电阻。由实验结果得到磁电阻特性和膜厚及Ｃｒ夹层厚度的关系。分析了ＮｉＦｅ／Ｃｒ／ＮｉＦｅ膜中两层ＮｉＦｅ膜之间存在在反铁磁交换耦合时，磁电阻效为著增强的现象，ＮｉＦｅ／Ｃｒ／ＮｉＦｅ膜各向异性磁电阻系数△ρ／ρａｖ达５．１％。     

Cu对NiFe／Cu／NiFe层状薄膜的巨磁阻抗效应影响的研究

用直流磁控溅射方法制备了ＮｉＦｅ／Ｃｕ／ｎｉＦｅ层状薄膜,研究了Ｃｕ膜宽度对ＮｉＦｅ／Ｃｕ／ｎｉＦｅ层状薄膜的巨磁阻抗效应的影响,结果表明,层状薄膜的巨磁阻抗疚随Ｃｕ膜宽度发生振荡现象,并提出了一个等效电路模型直观地解释了层状薄膜增强巨磁阻抗效应的机理。     

Si作过渡层的Co／Cu／Co三明治膜中高灵敏度巨磁电阻效应？…

用高真空电子束蒸发方向制备了以半导体材料Ｓｉ为过渡层的Ｃｏ／Ｃｕ／Ｃｏ三明治膜并研究了其巨磁电阻效应。当Ｓｉ过渡层厚度达到０．９ｎｍ时,三明治膜中开始出现较强的平面内磁各是性。在Ｓｉ １５ｎｍｍ／ｃｏ５ｎｍ／Ｃｕ３ｎｍ／Ｃｏ５ｎｍ结构中,在其易轴上得到了５．５％的巨磁电阻值和０．９％／Ｏｅ的高磁场灵敏度。研究了过渡层Ｓｉ／Ｃｏ界面之间的相互扩散,发现在过渡层Ｓｉ与Ｃｏ层间形成了Ｃｏ－Ｓｉ化合物。这     

不同制备条件下的Co／Cu多层膜巨磁电阻及铁磁共振研究

用溅射方法制备了几批Ｃｏ／Ｃｕ多层膜和夹层膜样品,通过测试发现：Ｃｏ／Ｃｕ多层膜样品的巨磁电阻与制备条件有关。在较高本底真空和较低工作气压条件下制备的样品具有较大的巨磁电阻,其铁磁共振测试的结果和Ｈｅｉｎｒｉｃｈ的夹层膜的理论计算结果的相吻合。     

Giant Magnetoresistance Effect of [bcc-Fe(M)/Cu](M=Co,Ni) Multilayers

1. IlltroductionGiant magnetoresistance (GMR) effect of metallic multilayers has been widely investigated after thefinding by Baibich et al.11], as a new phenomenon tobreak through the memory density in ultra high density magnetic recording, high sensitivity in magnetichead, and so on. Metallic multilsyers of 3d transition elements could be classified into three groups of[bee/bcc], [fee/fccl and [bee/fcc] from the standpointof combination of crystal structure of constituting elements of metal…     

Magnetoresistance enhancement of amorphous CoNbZr-buffered magnetoresistive multilayers

Amorphous CoNbZr alloys are thermally stable and thus have been intensively studied as soft layers of a pseudo-spin-valve (PSV). By depositing a wedge-shaped Co inset layer (IL) between the CoNbZr and Cu layer, we were able to simultaneously fabricate CoNbZr(t_CNZ)/Co(0-3 nm)/Cu/Co PSVs with various CoNbZr and Co IL thicknesses. We have investigated the dependence of magnetic properties, giant magnetoresistance (GMR) effect, and microstructure on the thickness of the amorphous CoNbZr buffer layer. The GMR enhancement behaviour of the PSVs with different CoNbZr thickness was also studied along the inset Co wedge. By optimizing the thickness of CoNbZr and Co IL, a maximum GMR ratio of 7% was obtained in the stack of CoNbZr(4 nm)/Co(1.2 nm)/Cu(2.2 nm)/Co(4 nm).     

Fe为过渡层的Co/Cu/Co三明治巨磁电阻效应的研究

用超高真空电子束蒸发方法成功制备了以不同厚度Fe为过渡层的Co/Cu/Co三明治巨磁电阻样品,与以Cr为过渡层的Co/Cu/Co三明治巨磁电阻样品比较,样品的矫顽力大大减小,因而样品的磁灵敏度有了较大地提高。当Fe过渡层的厚度为7nm时样品的磁电阻值最大。另外,温度更强烈地影响以Fe为过渡层样品的磁电阻值,在77K下样品的磁电阻曲线表现出明显的不对称性,它来源于低温下fcc Fe过渡层的反铁磁性转变。     

Si作过渡层的Co/Cu/Co三明治膜中高灵敏度巨磁电阻效应和平面内磁各向异性

用高真空电子束蒸发方法制备了以半导体材料Ｓｉ 为过渡层的Ｃｏ／Ｃｕ／Ｃｏ三明治膜并研究了其巨磁电阻效应。当Ｓｉ 过渡层厚度达到０．９ｎｍ 时,三明治膜中开始出现较强的平面内磁各向异性。在Ｓｉ１．５ｎｍ／Ｃｏ ５ｎｍ／Ｃｕ ３ｎｍ／Ｃｏ ５ｎｍ结构中,在其易轴上得到了５ ．５％ 的巨磁电阻值和０．９ ％／Ｏｅ 的高磁场灵敏度。研究了过渡层Ｓｉ／Ｃｏ 界面之间的相互扩散,发现在过渡层Ｓｉ 与Ｃｏ 层间形成了ＣｏＳｉ 化合物。这个硅化物界面层诱导了三明治膜的平面内磁各向异性,从而导致了易轴上高灵敏度巨磁电阻效应。     

Growth and characterisation of electrodeposited Co/Cu superlattices

Ferromagnetic/non-ferromagnetic Co/Cu superlattices were grown on polycrystalline Titanium (Ti) from a single electrolyte by electrodeposition. Microstructure and magnetoresistance (MR) of the superlattices were investigated as a function of the electrolyte pH as well as the layer thicknesses. Structural characterisation by X-ray diffraction (XRD) showed that the superlattices have face-centred cubic (fcc) structure with a strong (111) texture at the studied pH levels, but the texture degree is affected by the electrolyte pH. The scanning electron microscope (SEM) studies revealed that the superlattices grown at low pH (2.0) have smoother surfaces compared to those grown at high pH (3.0). The superlattices exhibited either anisotropic magnetoresistance (AMR) or giant magnetoresistance (GMR) depending on the Cu layer thickness. The shape of MR curves changes depending on the combination of Co and Cu layer thicknesses. The superlattices with Co layers less than 3 nm and Cu layers less than 2 nm have broad and non-saturating curves, indicating the predominance of a superparamagnetic contribution, possibly due to the discontinuous nature of the ferromagnetic (Co) layer. For superlattices with the same bilayer and total thicknesses, the GMR magnitude decreased as the electrolyte pH increased. Besides possible structural differences such as the texture degree and the surface roughness, this may arises from the variation in the Cu content of the ferromagnetic layers caused by the electrolyte pH.     

Ion beam deposition and structural characterization of GMR spinvalves

NiO exchange-biased “bottom” spin valves of the type NiO/NiFe/Co/Cu/Co/NiFe and FeMn exchange-biased “top” spin valves of the type NiFe/Co/Cu/Co/NiFe/FeMn were deposited by ion-beam deposition (except the NiO layer). Their magnetic properties, magneto-transport, and microstructures are characterized and compared with corresponding GMR spin valves deposited by dc magnetron sputtering. High-resolution cross-sectional transmission electron microscopy and X-ray diffraction reveal microstructural differences between ion-beam-deposited and dc magnetron sputtered spin valves. In particular, film texture, surface morphology, GMR ratio, exchange bias, interlayer coupling strength, and coercivity vary widely, but property-structure-processing correlation can be identified. A GMR ratio of ~9.7% was obtained on random textured NiO exchange-biased bottom spin valves by ion-beam deposition     

Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure

Two types of asymmetry in giant magnetoresistance (GMR) are observed which are not related to a training effect, but indicate different mechanisms of magnetization reversal of the pinned layer in spin-valve (SV) structures for ascending and descending field scans. GMR, exchange bias and coercivity in Si/Ta/NiFe/Cu/NiFe/IrMn/Ta SV-structures were investigated as functions of the thickness of the nonmagnetic spacer. The spacer thickness effects are discussed in correlation with layers microstructure and interfaces morphology variations.     

磁控溅射法制备IrMn底钉扎自旋阀研究

采用高真空直流磁控溅射的方法,在玻璃衬底上制备了结构为Ta／buffer layer／IrMn／CoFe／Cu／CoFe／NiFe／Ta的IrMn底钉扎自旋阀。研究了NiFe和Cu作为缓冲层对自旋阀磁性能的影响,并对缓冲层厚度进行了参数优化,当缓冲层厚度为2nm时自旋阀各项性能达到最佳。研究了退火制度对底钉扎自旋阀性能的影响,得到了30000e强磁场下200℃保温1h为最佳处理条件。通过结构的改善和工艺的优化,得到的底钉扎自旋阀的磁电阻率8．51％,矫顽场为0．50e,交换偏置场超过8000e。最后对自旋阀的底钉扎和顶钉扎结构进行了比较。     

具有覆盖层的Co/Cu/Co三明治的巨磁电阻效应研究

研究了覆盖层为铁磁性的Fe和非铁磁性的Ti、Cu的Co/Cu/Co三明治在室温和低温下的巨磁电阻效应。实验结果表明,室温下有覆盖层时,Co/Cu/Co三明治的巨磁电阻效应值没有明显变化,但以Fe为覆盖层的样品的矫顽力和饱和场明显减小,而Ti、Cu覆盖层对三明治样品的矫顽力和饱和场无太大的影响。温度降低时,覆盖层使Co/Cu/Co三明治的巨磁电阻值显著增加,表明样品的巨磁电阻效应与覆盖层及其与上层Co所形成的界面密切相关。