基于多路选择器的胚胎电子系统的设计与实现

胚胎电子系统的多细胞结构和工作机制产生于多细胞生物启发的灵感，是一种具有在线自诊断、自修复能力的细胞阵列。文章介绍了胚胎电子阵列的结构和基本原理，给出了细胞电路的设计方案，提出了一种胚胎电子阵列重构时保持电路状态的工作机制。以序列信号发生器为例，给出了基于胚胎电子阵列的应用系统设计方法，通过数字仿真验证了方案的可行性与正确性。     

一种LUT型胚胎电子阵列的功能分化方法

针对LUT型胚胎电子阵列功能分化方法的不足,提出了一种新型的LUT型胚胎电子阵列功能分化方法,根据目标电路的功能描述,通过前端综合、逻辑优化、逻辑映射、打包等操作,将目标电路转换为电子细胞为基本节点的电路形式,通过物理映射、基因库生成,将电路映射到阵列上,确定阵列中每个细胞的功能、连接,最终生成目标电路的基因库并确定每个细胞的表达基因,完成胚胎电子阵列的功能分化.该方法无需对计算过程中每一代电路进行功能评估,运算量小,计算速度快,为基于LUT型胚胎电子阵列的自修复电路应用提供了设计方法.最后,使用一个算例阐述了功能分化过程,并通过多个电路验证了该方法的分化速度.     

具有自修复能力的数字电路实现平台

胚胎型仿生硬件自提出以来已取得很大的研究进展,但偏重理论研究,与实际应用还有一定的差距。从工程应用的角度出发,详细介绍了如何设计一个基于电子细胞阵列的平台来实现具有自修复能力的数字电路。首先,对作为实现平台的细胞阵列结构进行简要的介绍,然后对阵列中电子细胞内的关键模块进行详细分析和具体设计,并以一个简单的数字电路为例说明了以上设计的合理性、可行性及通用性。     

一种新型仿生硬件容错系统——胚胎电子系统

本文介绍了一种从自然界获取灵感的新型容错设计方法--胚胎电子系统设计.它的容错原理是根据在生物细胞内部冗余结构里发现的自修复机制来实现的.胚胎电子系统,就是基于构造一个具有自检测和自修复能力的处理单元阵列的仿生硬件容错系统.本文阐述了这种容错方法的设计原理,介绍了该系统的基本结构,并通过一个设计实例的介绍来验证该方法的有效性.     

一种新型的仿生电子细胞基因存储结构

基因存储是电子细胞的重要组成部分,已有的基因存储无法兼顾系统的可靠性和硬件消耗。设计了一种新型的基因存储结构,细胞采用相关冗余方式存储系统的部分基因。通过基因更新过程,基于相邻细胞的基因信息恢复故障细胞损失的基因。细胞内存储基因数目与阵列和目标电路规模无关,可由设计者根据系统需求设置。理论分析和仿真实验表明,该基因存储不仅实现了阵列功能分化和自修复,而且可在保持系统可靠性的前提下,降低基因存储的硬件消耗,可用于大规模仿生自修复芯片的设计。     

胚胎型仿生自修复系统硬件消耗分析

胚胎型仿生自修复系统具有实时自修复能力,可用于高可靠性电子系统的设计。在设计过程中,其硬件消耗是工程师十分关心的问题。在分析胚胎型仿生自修复系统结构基础上,根据自修复过程特征,建立了其系统硬件消耗模型。并以三模冗余自修复系统为对比,对胚胎型仿生自修复系统的硬件消耗进行了仿真分析。分析表明,胚胎型仿生自修复系统在大规模、高自修复能力的电路设计中具有优越性,且通过电子细胞辅助电路的优化设计,可以降低自修复过程中的硬件消耗。     

可重构硬件芯片级故障定位与自主修复方法

 外部集中控制的可重构硬件容错系统,其重构控制算法复杂、重构时间开销大,且存在单点失效问题.本文研究芯片级分布式在线自主容错技术,提出了能够实现芯片级自修复的新型可重构硬件细胞阵列结构,阐述了互连资源的在线故障定位和自主修复方法.设计了功能细胞电路和容错开关块电路,采用分段定位法检测互连资源中多路器故障和连线开路故障,通过重配置布线和线移位操作分别实现多路器与连线故障自修复.以4位串并乘法器电路为例进行实验验证,分析了容错设计的硬件开销与时间开销,实验结果表明新方案的容错时间短、资源利用率高.     

对MULTISIM软件在电子教学中应用的研究

本课题通过MULTISIM软件对模拟电子、数字电子和电力电子中仿真实验的全面系统研究,主要涉及到模电中的单极放大电路、数电中的组合逻辑电路设计与分析以及电力电子中的BUCK-BOOST等电路仿真实例,MULTISIM软件中大量的电子类元件模块和数据处理显示模块能满足复杂电子电路的设计需求,形象直观的图形化界面操作更能够简单方便地控制和调试仿真电路的控制条件,并可以通过示波器显示模块形象直观地观察仿真实验波形图,比传统电子电路实验方法更加灵活可靠和形象直观,该软件在电子类教学中的应用前景非常广阔。     

总线胚胎电子细胞阵列中空闲细胞数目优选

胚胎仿生硬件技术为高可靠性大规模集成电路系统设计提供了一种新思路.在确定规模的总线胚胎电子细胞阵列中，为兼顾阵列的硬件资源消耗和可靠性，本文提出了一种阵列内空闲细胞数目的优选方法.基于多态系统可靠性理论，利用通用生成函数建立阵列的可靠性模型.以阵列MOS（Metal Oxide Semiconductor）管消耗数目为硬件资源消耗衡量指标，建立阵列的硬件资源消耗模型.基于阵列的可靠性和硬件资源消耗模型，在一定设计约束条件下，对阵列内空闲细胞数目进行优选.仿真实验和分析表明，该方法能够根据阵列设计要求选择最合适的阵列内空闲细胞数目，同时，解决了胚胎电子细胞阵列中空闲细胞数目选择依靠经验的问题.     

麦克风阵列时延估计在单片机上的研究与应用

随着电子通信的逐渐普及,高质量高稳定性的通信需求促使阵列信号处理研究的产生和日益壮大,尤其是语音信号处理。在飞利浦P89LPC936型号芯片的基础上,加上音频采集电路和模拟输出电路以及单片机串口通信电路,搭建了基于51单片机的麦克风阵列时延估计硬件系统。然后对自相关与互相关算法进行改进,让其通过单片机能够非实时地计算出实验中的阵列系统时延。有助于复杂的语音阵列信号处理中时延估计实时性的研究。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.