Tunable Spectrum Selectivity for Multiphoton Absorption with Enhanced Visible Light Trapping in ZnO Nanorods

Observation of visible light trapping in zinc oxide (ZnO) nanorods (NRs) correlated to the optical and photoelectrochemical properties is reported. In this study, ZnO NR diameter and c‐axis length respond primarily at two different regions, UV and visible light, respectively. ZnO NR diameter exhibits UV absorption where large ZnO NR diameter area increases light absorption ability leading to high efficient electron–hole pair separation. On the other hand, ZnO NR c‐axis length has a dominant effect in visible light resulting from a multiphoton absorption mechanism due to light reflection and trapping behavior in the free space between adjacent ZnO NRs. Furthermore, oxygen vacancies and defects in ZnO NRs are associated with the broad visible emission band of different energy levels also highlighting the possibility of the multiphoton absorption mechanism. It is demonstrated that the minimum average of ZnO NR c‐axis length must satisfy the linear regression model of Z _p,min = 6.31d to initiate the multiphoton absorption mechanism under visible light. This work indicates the broadening of absorption spectrum from UV to visible light region by incorporating a controllable diameter and c‐axis length on vertically aligned ZnO NRs, which is important in optimizing the design and functionality of electronic devices based on light absorption mechanism.     

ZnO nanorods on in-situ synthesized ZnSe grains

The ZnO nanorods grown on in-situ synthesized ZnSe grains through the chemical vapour deposition method are reported here for the first time. With a suitable growth condition, single crystal ZnO nanorods grow on the well-defined bounded facets of the random shape ZnSe grains using Zn and Se powders without any metal catalyst. The growth direction of ZnSe nanorods on a facet of a ZnSe grain is quite uniform. The synthesis mechanism of the ZnO nanorods on the ZnSe grains is proposed. The effects of the Se powder usage on the ZnO-ZnSe products and the photoluminescence of the products are investigated.     

Mechanism of ZnO heterolayer formation on ZnSe substrates

We have studied the mechanism of ZnO formation on ZnSe substrates. The results demonstrate that, varying process parameters, one can grow ZnO heterolayers of controlled thickness on ZnSe substrates.     

Nitrogen-doped p-type ZnO thin films and ZnO/ZnSe p-n heterojunctions grown on ZnSe substrate by radical beam gettering epitaxy

We investigate the p-type doping in ZnO prepared by the method of radical beam gettering epitaxy using NO gas as the oxygen source and nitrogen dopant. Secondary ion mass spectroscopy measurements demonstrate that N is incorporated into ZnO film in concentration of about 8 × 10¹⁸ cm^− 3. The hole concentration of the N-doped p-type ZnO films was between 1.4 × 10¹⁷ and 7.2 × 10¹⁷ cm^− 3, and the hole mobility was 0.9-1.2 cm²/Vs as demonstrated by Hall effect measurements. The emission peak of 3.312 eV is observed in the photoluminescence spectra at 4.2  of N-doped p-type ZnO films, probably neutral acceptor bound. The activation energy of the nitrogen acceptor was obtained by temperature-dependent Hall-effect measurement and equals about 145 meV. The p-n heterojunctions ZnO/ZnSe were grown on n-type ZnSe substrate and have a turn-on voltage of about 3.5 V.     

Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy

We report on the growth of monocrystalline thin films of ZnSe and ZnO by atomic layer epitaxy by simple reaction between elemental precursors. Structural and optical properties of these films are discussed with reference to the investigations performed with atomic force microscopy, scanning electron microscopy, cathodoluminescence and photoluminescence.     

On the Absorption Spectrum of Noble Gases at the Arc Spectrum Limit

Rydberg spectral lines of an atom are sometimes superimposed on the continuous spectrum of a different configuration. Effects of interaction among different configurations in one of these cases are theoretically investigated, and a formula is obtained that describes the behavior of absorption spectrum intensity. This offers qualitative justification of some experimental results obtained by BEUTLER in studies of absorption arc spectra of noble gases and I^b spectra of some metal vapors.     

Electron-Emission and Cathodoluminescent Properties of ZnO Films Prepared by Oxidation of ZnSe and ZnS

Polycrystalline ZnO films were prepared on glass substrates by oxidizing ZnSe and ZnS. The preparation conditions were optimized, and the oxidation kinetics of ZnSe films were analyzed. The electron-emission and cathodoluminescent properties of the films were shown to be suitable for the production of cathodoluminescent screens with a brightness of about 300 cd/m². The films were used to fabricate high-efficiency cold electron emitters.     

金属卟啉LB膜吸收光谱研究

采用Langmuir-Blodgett(LB)技术,在23mN/m的膜压下制备了四苯基卟啉铜(CuTPP)、四苯基卟啉锌(ZnTPP)及四苯基卟啉镍(NiTPP)超薄膜.分析了CuTPP、ZnTPP及 NiTPP 的LB膜分别对乙酸乙酯气体和四氢呋喃气体的紫外光谱变化,并通过薄膜对紫外-可见吸收光谱的变化阐述了构建有机气体-金属卟啉色谱探测阵列的可行性.实验结果表明,无论针对乙酸乙酯气体还是四氢呋喃气体,ZnTPP 薄膜光谱变化最明显,CuTPP薄膜次之,而NiTPP薄膜几乎没有光谱变化.因此认为CuTPP和ZnTPP可作为色谱阵列单元识别乙酸乙酯气体和四氢呋喃气体(THF).     

Precipitates in Fe-doped InP

Precipitates of a second phase have been observed in iron doped InP grown by the liquid encapsulated Czochralski technique from a melt containing greater than 0.3% by wt. iron. Scanning electron microscope data using characteristic x-ray imaging and electron microprobe analysis indicate that the precipitates are an iron phosphorus compound.     

Ag-BaO复合薄膜光吸收谱中的双峰结构

经超额Ba激活的Ag-BaO复合薄膜光吸收谱显示,该薄膜样品在可见-近红外光波段存在2个吸收峰.理论分析表明,位于可见光区的主吸收峰源于埋藏在BaO半导体中的Ag纳米粒子的表面等离子激元共振吸收;而位于近红外光区的次吸收峰则是由BaO半导体基质中杂质能级的光吸收引起的.杂质能级的产生与超额Ba在BaO晶体中造成的氧缺位有关.     

Phase transformation and thermal stability of ZnSe QDs due to annealing: emergence of ZnO

In the present study ZnSe quantum dots (QDs) were synthesized by chemical co-precipitation method using mercaptoethanol as the capping agent. These nanostructures were characterized for structure and surface morphology by using X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectrometry respectively. The average size of ZnSe quantum dots from XRD and HRTEM is found to be 4–5 nm having cubic crystalline phase. Effect of annealing temperature, which were determined as phase transformation temperatures (299 and 426 °C) using differential scanning calorimetry has been investigated for structural and thermal stability of QDs. The XRD of annealed samples at temperatures 325 and 442 °C (slightly higher than the temperatures corresponding to two crystallization peaks in the DSC scan) have been carried out to find structural changes corresponding to these annealing temperatures. Sample annealed at 325 °C showed no change in the phase except improvement in intensity of peaks (crystallinity) whereas sample annealed at 442 °C showed transitions from cubic phase of ZnSe to ZnO and orthorhombic phases of ZnSeO₄, ZnSeO₃. Emergence of ZnO peaks in the XRD pattern of annealed samples have been further verified by Raman spectroscopy of the annealed samples. Besides this crystallization kinetics of ZnSe quantum dots has been employed to determine activation energies of these transitions due to oxidation by employing Kissinger, Augis Bennett and Ozawa’s models. Higher activation energy of crystallization corresponding to first crystallization peak shows that the cubic phase is more thermally stable.     

掺杂TiO2的ZnO压敏电阻正电子寿命谱研究

利用正电子湮灭技术(PAS)和扫描电子显微镜(SEM),分析了掺杂TiO2的ZnO压敏电阻的晶界缺陷,以及不同降温速率对晶界特性的影响.实验结果表明,向样品中掺杂TiO2或者快速冷却样品,都能使得样品晶界处Zn空位团尺寸变大,浓度减小.     

Effect of Magnesium Impurity on the Structure, Luminescence, and Reflection Spectrum of ZnSe Crystals

The structural and luminescent properties of ZnSeMg crystals are studied. The results indicate that Mg doping gives rise to local lattice distortions and influences the densities of native point defects. This leads to broadening of x-ray diffraction peaks, reduces the red emission intensity to nearly zero, and markedly raises the blue emission intensity.     

Fabrication of ZnO/ZnS/ZnSe nanosheets for enhanced photocatalytic activity under simulated solar light

Journal of Materials Science: Materials in Electronics - Ternary composite ZnO/ZnS/ZnSe nanosheets (NSs) with diverse proportions of three modules successfully manufactured by a plain two-step...     

Partial conversion reaction of ZnO nanowires to ZnSe by a simple selenization method and their photocatalytic activities

A simple novel synthetic method for preparing ZnSe/ZnO heterostructured nanowire (NW) arrays via the selenization of ZnO NWs is reported. A hydrothermally grown ZnO NWs array on a glass substrate was reacted with selenium vapor to generate a 20–30 nm of zincblend ZnSe nanoparticles (NPs) on wurtzite ZnO NWs. A growth mechanism was proposed based on SEM, XRD, and TEM analysis to explain the partial chemical conversion of ZnO NW surfaces into ZnSe NPs. This mechanism is applicable to the synthesis of other chalcogenide compounds. The as-synthesized ZnSe/ZnO heterojunctions showed enhanced UV–visible light absorption properties. The materials exhibited excellent photocatalytic activity toward the decomposition of an organic dye compared to the bare ZnO due to enhanced light absorption and the type-II cascade band structure.     

Effect of Background Fe Impurities on the IR Absorption and Dielectric Response of High-Resistivity ZnSe Single Crystals

High-resistivity zinc selenide crystals containing background impurities have been studied by IR spectroscopy and dielectric spectroscopy. Their IR absorption spectra contain a band attributable to the presence of background Fe impurities in the material. The dielectric characteristics of the ZnSe crystals lead us to conclude that, because of a nonuniform distribution of background impurities, they have the form of matrices containing inclusions.     

ZnO纳米复合粒子的制备及紫夕吸收性能研究

利用乙醇辅助水热法制备出ZnO／TiO2和ZnO／SnO2两种纳米复合粒子,采用X射线衍射（XRD）、扫描电子显微镜（SEM）及x射线能谱（EDS）分析方法对其结构进行表征,并通过紫外-可见漫反射光谱（uvvis）分析探讨了其紫外可见吸收性能,研究结果表明,在紫外-可见漫反射吸收光谱图中,ZnO／TiO2和ZnO／SnO2纳米复合粒子的最大吸收峰较纯纳米ZnO蓝移。同时,在可见光波段也有较弱吸收,拓展了其紫外吸收光谱。     

氧化锌和氧化镁对磷酸盐胶黏剂吸潮性能的影响

磷酸铝胶黏剂具有固化温度低、无毒、粘结强度高、高温结构稳定等优点,可以粘结金属、陶瓷,还可以作为耐火材料和复合材料的基体,在建筑和航天领域有着广泛的应用.本文以H3 PO4、Al(OH)3配制的磷酸盐溶液为基料,ZnO和MgO为固化剂,制备了改性磷酸铝胶粘剂,研究固化剂的添加对磷酸盐胶黏剂性能的影响,并用于制备氧化铝纤维隔热材料.调节ZnO和MgO的添加量在1％～5％(质量分数),通过差示扫描量热法(DSC)研究了胶黏剂的固化温度,通过扫描电镜分析隔热材料结构,通过对比各试样大气环境下的增重比例研究磷酸盐胶黏剂的吸湿性能.结果表明,ZnO和MgO的加入都能不同程度降低胶黏剂的固化温度,促进胶黏剂的交联固化,其中,添加5％(质量分数)ZnO和5％(质量分数)MgO可以将磷酸盐胶黏剂的固化温度从254℃分别降低到172℃和161℃.随固化剂的加入量越多吸湿性能改善越明显,其中,加入5％(质量分数)MgO可以将胶黏剂的吸湿性增重比例从13.5％降低到6.3％.     

直流磁控溅射ZnO薄膜的结构和室温PL谱研究

ZnO是一种新型的宽带化合化半导体材料 ,对短波长的光电子器件如UV探测器 ,LED和LD有着巨大的潜在应用。本实验研究采用直流反应磁控溅射法在硅衬底上沉积C轴择优取向的ZnO晶体薄膜 ,薄膜呈柱状结构 ,晶粒大小约为 10 0nm ,晶粒内为结晶性能完整的单晶 ,但晶粒在C轴方向存在较大的张应力。ZnO薄膜在He Cd激光器激发下有较强的紫外荧光发射 ,应力引起ZnO禁带宽度向长波方向移动 ,提高衬底温度有利于降低应力和抑制深能级的绿光发射