Nuclear magnetic resonance imaging with 90-nm resolution

Magnetic resonance imaging (MRI) is a powerful imaging technique that typically operates on the scale of millimetres to micrometres. Conventional MRI is based on the manipulation of nuclear spins with radio-frequency fields, and the subsequent detection of spins with induction-based techniques. An alternative approach, magnetic resonance force microscopy (MRFM), uses force detection to overcome the sensitivity limitations of conventional MRI. Here, we show that the two-dimensional imaging of nuclear spins can be extended to a spatial resolution better than 100 nm using MRFM. The imaging of 19F nuclei in a patterned CaF(2) test object was enabled by a detection sensitivity of roughly 1,200 nuclear spins at a temperature of 600 mK. To achieve this sensitivity, we developed high-moment magnetic tips that produced field gradients up to 1.4 x 10(6) T m(-1), and implemented a measurement protocol based on force-gradient detection of naturally occurring spin fluctuations. The resulting detection volume was less than 650 zeptolitres. This is 60,000 times smaller than the previous smallest volume for nuclear magnetic resonance microscopy, and demonstrates the feasibility of pushing MRI into the nanoscale regime.     

Sub-surface imaging with the magnetic resonance force microscope

The magnetic resonance force microscope (MRFM) is based on mechanical detection of magnetic resonance signals. The force between the field gradient due to a small permanent magnet and the spin magnetization in the sample is used to drive the oscillation of a high Q, low spring-constant micro-mechanical resonator (e.g. atomic force microscope cantilever). This same field gradient also enables microscopic magnetic resonance imaging. We will discuss the characteristics and capabilities of the electron spin MRFM we have fabricated. Our MRFM has a sensitivity of 3×10¹¹ electron spins at room temperature in an applied field of 253 Gauss. Its vertical resolution is 1 micron. One- and two-dimensional scans of a particle beneath the silicon cantilever have been performed which demonstrate the sub-surface spatial imaging capabilities. We also discuss recent advances in the miniaturization of two crucial MRFM components: the micromechanical resonator and the micromagnetic tip.     

Thermomagnetic fluctuations and hysteresis loops of magnetic cantilevers for magnetic resonance force microscopy

We have used frequency-shift cantilever magnetometry to study individual nickel magnets patterned at the end of ultra-sensitive silicon cantilevers for use in magnetic resonance force microscopy (MRFM). We present a procedure for inferring a magnet's full hysteresis curve from the response of cantilever resonance frequency versus magnetic field. Hysteresis loops and small-angle fluctuations were determined at 4.2 K with an applied magnetic field up to 6 T for magnets covering a range of dimensions and aspect ratios. Compared to magnetic materials with higher anisotropy, we find that nickel is preferable for MRFM experiments on nuclear spins at high magnetic fields.     

An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition

In this work, the controlled fabrication of highly ordered ZnO nanowire (NW) arrays on silicon substrates is reported. Si NWs fabricated by a combination of phase shift lithography and etching are used as a template and are subsequently substituted by ZnO NWs with a dry-etching technique and atomic layer deposition. This fabrication technique allows the vertical ZnO NWs to be fabricated on 4 in Si wafers. Room temperature photoluminescence and micro-photoluminescence are used to observe the optical properties of the atomic layer deposition (ALD) based ZnO NWs. The sharp UV luminescence observed from the ALD ZnO NWs is unexpected for the polycrystalline nanostructure. Surprisingly, the defect related luminescence is much decreased compared to an ALD ZnO film deposited at the same time ona plane substrate. Electrical characterization was carried out by using nanomanipulators. With the p-type Si substrate and the n-type ZnO NWs the nanodevices represent p–n NW diodes.The nanowire diodes show a very high breakthrough potential which implies that the ALD ZnO NWs can be used for future electronic applications.     

Real time atomic force microscopy imaging during nanogap formation by electromigration

We present real time atomic force microscopy imaging during nanogap fabrication by feedback controlled electromigration of a gold nanowire. The correlated measurements of electrical resistance and atomic force microscopy reveal that the major structural changes appear at the early stage of the process. Moreover, despite important morphological changes, the resistance of the nanowire shows a weak increase of just a few ohms. The detailed analysis of the atomic force microscopy images clearly shows that the electromigration process is strongly influenced by the initial microstructure of the nanowire.     

Growth structure investigation of MgF2 and NdF3 films grown by molecular beam deposition on CaF2(111) substrates

The growth structure of MgF₂ and NdF₃ films grown on polished CaF₂(111) substrates deposited by molecular beam deposition has been investigated using transmission electron microscopy (TEM) of microfractographical and surface replications as well as cross-sectional TEM, atomic force microscopy, packing density, and absorption measurements. It has been shown that by taking advantage of ultrahigh vacuum environments and a special stratification property of MgF₂ and NdF₃ films, the preparation of nanocrystalline films of high packing density and low optical absorption is possible at a substrate temperature of 425 K.     

基于扫描隧道显微镜的单原子自旋共振技术

近年来,应用扫描隧道显微镜技术已经可以测量单个原子的电子自旋共振谱线,为实现原子尺度量子磁性的探测与操控迈出了重要一步。电子自旋共振扫描隧道显微镜具有原子分辨能力和几十个纳电子伏的超高能量分辨率,可以实现微弱信号的原子尺度探测,例如可以测量固体表面相距几纳米的两个原子之间的微弱磁偶极相互作用、单个原子的电子与核自旋之间的超精细相互作用,以及人工自旋阵列的量子涨落等。借助脉冲式电子自旋共振技术,可以进一步实现固体表面单个磁性原子以及耦合原子的量子相干操控,测量其拉比振荡、拉姆齐干涉条纹和自旋回波信号等。单原子脉冲式电子自旋共振的实现为应用单原子量子探针进行量子探测奠定了重要基础。另外,对具有原子级精度的人工自旋结构的量子相干操控,为多体系统的量子模拟提供了重要的固态实验平台。     

Nanowire probes for high resolution combined scanning electrochemical microscopy - atomic force microscopy

We describe a method for the production of nanoelectrodes at the apex of atomic force microscopy (AFM) probes. The nanoelectrodes are formed from single-walled carbon nanotube AFM tips which act as the template for the formation of nanowire tips through sputter coating with metal. Subsequent deposition of a conformal insulating coating, and cutting of the probe end, yields a disk-shaped nanoelectrode at the AFM tip apex whose diameter is defined by the amount of metal deposited. We demonstrate that these probes are capable of high-resolution combined electrochemical and topographical imaging. The flexibility of this approach will allow the fabrication of nanoelectrodes of controllable size and composition, enabling the study of electrochemical activity at the nanoscale.     

Fabrication of metal nanostructures by atomic force microscopy nanomachining and related applications

In this work, the fabrication of metal nanostructures by a combination of atomic force microscopy nanomachining on a thin polymer resist, metal coating and lift-off is presented. Nanodots with sizes down to 20 nm and nanowires with widths ranging between 40 and 100 nm have been successfully created by nanoindenting and nanoscratching. The results exemplify the feasibility and effectiveness of the present technique as an alternative to e-beam lithography. The localized surface plasmon resonance properties of the fabricated nanostructures are characterized. The chemical sensing capability of a single nanowire based on resistance increase is also demonstrated.     

Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties

Light management and electrical isolation are essential for the majority of optoelectronic nanowire (NW) devices.Here,we present a cost-effective technique,based on vapor-phase deposition of parylene-C and subsequent annealing,that provides conformal encapsulation,anti-reflective coating,improved optical properties,and electrical insulation for GaAs nanowires.The process presented allows facile encapsulation and insulation that is suitable for any nanowire structure.In particular,the parylene-C encapsulation functions as an efficient antireflection coating for the nanowires,with reflectivity down to ＜1％ in the visible spectrum.Furthermore,the parylene-C coating increases photoluminescence intensity,suggesting improved light guiding to the NWs.Finally,based on this process,a NW LED was fabricated,which showed good diode performance and a clear electroluminescence signal.We believe the process can expand the fabrication possibilities and improve the performance of optoelectronic nanowire devices.     

Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection

Integrating nanophotonics with electronics could enhance and/or enable opportunities in areas ranging from communications and computing to novel diagnostics. Light sources and detectors are important elements for integration, and key progress has been made using semiconducting nanowires and carbon nanotubes to yield electrically driven sources and photoconductor detectors. Detection with photoconductors has relatively poor sensitivity at the nanometre scale, and thus large amplification is required to detect low light levels and ultimately single photons with reasonable response time. Here, we report avalanche multiplication of the photocurrent in nanoscale p-n diodes consisting of crossed silicon-cadmium sulphide nanowires. Electrical transport and optical measurements demonstrate that the nanowire avalanche photodiodes (nanoAPDs) have ultrahigh sensitivity with detection limits of less than 100 photons, and subwavelength spatial resolution of at least 250 nm. Crossed nanowire arrays also show that nanoAPDs are reproducible and can be addressed independently without cross-talk. NanoAPDs and arrays could open new opportunities for ultradense integrated systems, sensing and imaging applications.     

Silicon nanowire transistors with a channel width of 4 nm fabricated by atomic force microscope nanolithography

The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance. The nanowires have been carved from a silicon-on-insulator wafer by a combination of local oxidation processes with a force microscope and etching steps. We have fabricated and measured the electrical properties of a silicon nanowire transistor with a channel width of 4 nm. The flexibility of the nanofabrication process is illustrated by showing the electrical performance of two nanowire circuits with different geometries. The fabrication method is compatible with standard Si CMOS processing technologies and, therefore, can be used to develop a wide range of architectures and new microelectronic devices.     

High-resolution photometric optical monitoring for thin-film deposition

Real-time monitoring of thin-film deposition with high resolution is important for precise fabrication of thin-film devices in a technological environment with ever-increasing demands for smaller size and better performance. Using photometry, we were able to achieve a real-time optical monitoring resolution of film thickness that is comparable with a single atomic layer scale (i.e., subnanometer). Filtering noise efficiently and compensating for sources of error by use of an appropriate model produced this high resolution. The procedure proved reliable and can be useful in the thin-film-deposition industry.     

Nanowire lithography: fabricating controllable electrode gaps using Au-Ag-Au nanowires

A method to fabricate nanowire electrodes possessing controllable gaps is described. The method relies on electrochemical deposition and selective chemical etching or heating to selectively remove the Ag segment of Au-Ag-Au nanowires. Because the thickness of the Ag segment directly dictates the size of the nanogap, the gap width can be easily controlled during the nanowire fabrication process. Herein, we demonstrate gaps with 2 microm, 100 nm and 20 nm widths via the above-mentioned approaches. In addition, we observed that small gaps (approximately 20 nm) can be formed through annealing Au-Ag-Au nanowires at 200 degrees C in air. Electrical contact between nanowire electrodes and contact pads is studied. Using nanowire electrodes with a 100 nm gap, we subsequently fabricate organic field effect transistors (FETs) with regioregular poly(3-hexylthiophene).     

Ultra-dense planar metallic nanowire arrays with extremely large anisotropic optical and magnetic properties

A nanofabrication method for the production of ultra-dense planar metallic nanowire arrays scalable to wafer-size is presented. The method is based on an efficient template deposition process to grow diverse metallic nanowire arrays with extreme regularity in only two steps. First, III–V semiconductor substrates are irradiated by a low-energy ion beam at an elevated temperature, forming a highly ordered nanogroove pattern by a “reverse epitaxy” process due to self-assembly of surface vacancies. Second, diverse metallic nanowire arrays (Au, Fe, Ni, Co, FeAl alloy) are fabricated on these III–V templates by deposition at a glancing incidence angle. This method allows for the fabrication of metallic nanowire arrays with periodicities down to 45 nm scaled up to wafer-size fabrication. As typical noble and magnetic metals, the Au and Fe nanowire arrays produced here exhibited large anisotropic optical and magnetic properties, respectively. The excitation of localized surface plasmon resonances (LSPRs) of the Au nanowire arrays resulted in a high electric field enhancement, which was used to detect phthalocyanine (CoPc) in surface-enhanced Raman scattering (SERS). Furthermore, the Fe nanowire arrays showed a very high in-plane magnetic anisotropy of approximately 412 mT, which may be the largest in-plane magnetic anisotropy field yet reported that is solely induced via shape anisotropy within the plane of a thin film.

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Monolayer Graphene Coupled to a Flexible Plasmonic Nanograting for Ultrasensitive Strain Monitoring

Plasmonically coupled graphene structures have shown great promise for sensing applications. Their complex and cumbersome fabrication, however, has prohibited their widespread application and limited their use to rigid, planar surfaces. Here, a plasmonic sensor based on gold nanowire arrays on an elastomer with an added graphene monolayer is introduced. The stretchable plasmonic nanostructures not only significantly enhance the Raman signal from graphene, but can also be used by themselves as a sensor platform for 2D strain sensing. These nanowire arrays on an elastomer are fabricated by template‐stripping based nanotransfer printing, which enables a simple and fast production of stable nanogratings. The ultrasmooth surfaces of such transferred structures facilitate reliable large‐area transfers of graphene monolayers. The resulting coupled graphene‐nanograting construct exhibits ultrahigh sensitivity to applied strain, which can be detected by shifts in the plasmonic‐enhanced Raman spectrum. Furthermore, this sensor enables the detection of adsorbed molecules on nonplanar surfaces through graphene‐assisted surface enhanced Raman spectroscopy (SERS). The simple fabrication of the plasmonic nanowire array platform and the graphene‐coupled devices have the potential to trigger widespread SERS applications and open up new opportunities for high‐sensitivity strain sensing applications.     

Nanoscale synthesis and characterization of graphene-based objects

Graphene-based nano-objects such as nanotrenches, nanowires, nanobelts and nanoscale superstructures have been grown by surface segregation and precipitation on carbon-doped mono- and polycrystalline nickel substrates in ultrahigh vacuum. The dominant morphologies of the nano-objects were nanowire and nanosheet. Nucleation of graphene sheets occurred at surface defects such as step edges and resulted in the directional growth of nanowires. Surface analysis by scanning tunneling microscopy (STM) has clarified the structure and functionality of the novel nano-objects at atomic resolution. Nanobelts were detected consisting of bilayer graphene sheets with a nanoscale width and a length of several microns. Moiré patterns and one-dimensional reconstruction were observed on multilayer graphite terraces. As a useful functionality, application to repairable high-resolution STM probes is demonstrated.     

Parallel core-shell metal-dielectric-semiconductor germanium nanowires for high-current surround-gate field-effect transistors

Core-shell germanium nanowires (GeNW) are formed with a single-crystalline Ge core and concentric shells of nitride and silicon passivation layer by chemical vapor deposition (CVD), an Al2O3 gate dielectric layer by atomic layer deposition (ALD), and an Al metal surround-gate (SG) shell by isotropic magnetron sputter deposition. Surround-gate nanowire field-effect transistors (FETs) are then constructed using a novel self-aligned fabrication approach. Individual SG GeNW FETs show improved switching over GeNW FETs with planar gate stacks owing to improved electrostatics. FET devices comprised of multiple quasi-aligned SG GeNWs in parallel are also constructed. Collectively, tens of SG GeNWs afford on-currents exceeding 0.1 mA at low source-drain bias voltages. The self-aligned surround-gate scheme can be generalized to various semiconductor nanowire materials.     

Surface magnetism at the nanometer and atomic scale

During the past year, significant advances have been made in the characterization of low-dimensional magnetic structures down to the atomic length scale. Spin-polarized scanning tunneling spectroscopy and magnetic force microscopy under ultrahigh vacuum conditions have been applied to image the nanomagnetic domain structure of ultrathin transition and rare-earth metal films, whereas conventional scanning tunneling spectroscopy has been used to study Kondo scattering at single magnetic impurities. The fabrication of artificial magnetic nanostructures using atomic manipulation processes based on the scanning tunneling microscope will additionally allow fundamental investigations of magnetic interactions at the atomic level.     

ITO Coated Optical Fiber Refractometers Based on Resonances in the Infrared Region

In this work, it is presented the fabrication of optical fiber refractometers in the infrared region based on the deposition of indium tin oxide (ITO) coatings onto optical fibers core. ITO coatings act as the resonance supporting layer allowing the coupling of light at specific wavelengths from the waveguide to the ITO-coating/external medium region as a function of the refractive index of the external medium. The utilization of ITO coatings allows the fabrication of robust, highly reproducible and easy to implement resonance based refractometers. The results obtained showed an average sensitivity of 3125 nm/refractive index unit, which is comparable to the existing devices based either on resonance or other techniques. The fabricated devices showed fast response and no dependence with the length of the sensitive region.