Synthesis and thermoelectric properties of double-filled skutterudites CeyYb0.5−yFe1.5Co2.5Sb12

Ce–Yb double-filled skutterudites Ce_0.5?yYb_yFe_1.5Co_2.5Sb₁₂ (y = 0.1, 0.2, 0.4 and 0.5) were synthesized by a melting method with subsequent annealing. The thermal conductivity, electrical conductivity and Seebeck coefficient were measured from room temperature up to 773 K. The thermal conductivities of all the double-filled skutterudites were found to be lower than the Yb single-filled skutterudites. An enhancement in the dimensionless thermoelectric figure of merit ZT was also observed in all the double-filled skutterudites as compared to the Yb single-filled skutterudite. Ce_0.3Yb_0.2Fe_1.5Co_2.5Sb₁₂ has the highest dimensionless figure of merit ZT of 0.32 at 723 K, which is 55% higher than the Yb single-filled skutterudite at the same temperature.     

Thermoelectric properties of P-type Yb-filled skutterudite YbxFeyCo4-ySb12

While intensive work has been done on n-type Yb filled skutterudites in the past, very little is known about their p-type counterparts for potential applications as thermoelectric materials. In this paper, we report a systematic study of high temperature thermoelectric transport properties of p-type Yb-filled Fe-compensated skutterudites Yb_xFe_yCo_4-ySb₁₂ with the aim to complement the knowledge base for the Yb-filled skutterudite family. The highest ZT_max = 0.6 was found in Yb_0.6Fe₂Co₂Sb₁₂ at 782 K. YbFe₄Sb₁₂ exhibits the second highest ZT_max = 0.57 at 780 K, which is much higher than the previous estimate of 0.4 for the same composition.     

A new generation of p-type didymium skutterudites with high ZT

This work evaluates the influence of single, double and triple filling of didymium, Ca and Ba in Fe₄Sb₁₂ as well as in Fe₃CoSb₁₂ on the thermoelectric performance. Various filling levels, as well as various preparation methods and nanostructuring were used to improve the thermoelectric performance. It is shown that samples prepared via ball milling have a higher ZT (ZT = 1.1) than their hand milled counterparts (ZT ≈ 0.8). Co/Fe-substituted samples have ZT > 1.2 i.e. 25% higher than samples without Co, an average ZT up to 0.93 and an efficiency up to 14% for the temperature gradient of 300–800 K. With this good thermoelectric performance in such a wide temperature range these materials are hitherto the best p-type skutterudites for thermoelectric devices.     

Realization of high thermoelectric performance in p-type unfilled ternary skutterudites FeSb2+xTe1−x via band structure modification and significant point defect scattering

FeSb₂Te, a ternary derivative of binary CoSb₃, displays anomalous electrical and thermal transport properties because of considerable modifications in the band structure induced by Fe and significant mixed valence state (namely Fe²⁺ and Fe³⁺) scattering of phonons. The substitution of Te for Sb generates more holes without notably affecting the band structure, while markedly improving the electrical conductivity and retaining a high Seebeck coefficient due to the enhanced density of states, thereby leading to dramatically increased power factors. Furthermore, the heat carrying phonons are strongly scattered with increasing x value because of the formation of solid solutions between two end members: □FeSb₂Te and □FeSb₃ (where □ can be viewed as a vacancy). Consequently, high thermoelectric figures of merit were achieved in the FeSb_2+xTe_1?x compounds, with the largest ZT value reaching ～0.65 for the sample with x = 0.2. This is the highest value among all p-type unfilled skutterudites and is comparable with some filled compositions. Prospects for further improving the performance of p-type FeSb₂Te-based skutterudites are discussed.     

Effects of Sn-doping on the electrical and thermal transport properties of p-type Cerium filled skutterudites

p-type Sn-doped CoSb₃-based skutterudite compounds have been prepared using melting-quenching-annealing method and spark plasma sintering technique. Sn atoms in our samples are completely soluted on Sb-site with a fixed charge state and non-magnetic feature, providing a better choice to ascertain the effect of element doping at the [Co₄Sb₁₂] framework on the electrical and thermal transport properties in p-type skutterudites. Doping Sn at the framework introduces additional ionized impurity scattering to affect the electron transport greatly. Similar electrical transport properties between Ce_0.2Co₄Sb_11.2Sn_0.8 and Co₄Sb₁₁Sn_0.6Te_0.4 suggest that Ce fillers contribute little to the valence band edge. Filling Ce into the voids and doping Sn at the framework introduce additional phonon resonant and point defect scattering mechanisms, thereby reducing lattice thermal conductivity remarkably. Moreover, our data suggest that combining these two effects is more effective to suppress lattice thermal conductivity through scattering broad range of phonons with different frequencies.     

Transport properties on Sn-filled and Te-doped CoSb<Subscript>3</Subscript> skutterudites

Sn-filled and Te-doped CoSb₃ skutterudites (Sn_xCo₈Sb_23.25Te_0.75) were synthesized by the encapsulated induction melting process. Single δ-phase was successfully obtained by subsequent heat treatment at 823 K for 6 days. Structural characterizations were carried out through X-ray diffraction studies. Transport properties such as the Seebeck coefficient, electrical resistivity, thermal conductivity, carrier concentration and mobility were measured and analyzed. The unfilled Co₈Sb_23.25Te_0.75 sample showed n-type conductivity from 300 K to 700K. However, the Sn-filled Sn_xCo₈Sb_23.25Te_0.75 showed n-type conductivity for z=0.25 and 0.5, and p-type conductivity for z=1.0 and 1.5 from 300 K to 700 K. Thermal conductivity was reduced by the impurity-phonon scattering. The dimensionless figure of merit (ZT) was remarkably improved over that of untreated CoSb₃. However, the ZT value decreased when filling with z≥1.0 because the conductivity type was changed from n-type to p-type, thereby allowing bipolar conduction. The details are discussed in terms of the two-band model and the bipolar thermoelectric effect.     

New p- and n-type skutterudites with ZT > 1 and nearly identical thermal expansion and mechanical properties

Using thermoelectricity to directly convert (waste) heat energy into useful electricity faces a number of challenges. Not only are optimised thermal and electrical transport properties required resulting in a high figure of merit ZT and a high thermal–electric conversion efficiency η over a wide temperature range, thermoelectric (TE) materials must have sufficient mechanical integrity to survive continuous heating–cooling cycles. Thermal expansion of the material as well as the mechanical properties play an important role, i.e. their values should be as similar as possible for p- and n-type alloys to avoid stresses when used in a TE device. In this paper multiple filled p- and n-type skutterudites (Ba,Sr,DD,Yb)_y(Fe_1–xNi_x)₄Sb₁₂ with a ZT > 1 and η ≈ 13% are presented, for the first time showing, in contrast to hitherto investigated skutterudites, nearly identical thermal expansion coefficients and elastic moduli. The ZT values of these skutterudites could be further enhanced by more than 20% after severe plastic deformation via high-pressure torsion.     

High-pressure synthesis of phonon-glass electron-crystal featured thermoelectric LixCo4Sb12

Li-filled CoSb₃, which is inaccessible under ambient pressure, was successfully synthesized with a high-pressure synthesis technique, demonstrating a fast and effective way to broaden elemental species that can be filled into voids of skutterudites. The optimized Li_0.36Co₄Sb₁₂, with a greatly enhanced thermal power factor and much reduced thermal conductivity, has a ZT value of 1.3 at 700 K, the highest among all single elemental filled CoSb₃ materials at this temperature. In addition, an instructive linear relationship between the Einstein temperatures of the distinct rattling fillers and their ionic radii is revealed, which as a reference can easily be applied to the multiple elemental filling strategy for selecting suitable filling elemental species to reduce the lattice thermal conductivity more effectively.     

Substitution of Antimony by Tin and Tellurium in n-Type Skutterudites CoSb2.8Sn x Te0.2−x

We have studied the substitution of antimony by tin and tellurium in n-type skutterudites CoSb_2.8Sn _x Te_0.2?x . The samples were made by ball milling ingots and hot pressing the ball-milled nanopowder. Rather than filling the cage of the structure, we aimed to use disorder in pnictogen rings by elemental substitution of Sb by Sn and Te. In skutterudite CoSb₃, the dominant heat-carrying phonons are associated with the vibrational modes of the Sb-rings; disorder in the rings can be an effective way to suppress the thermal transport. By suitably tuning the contents of Sn and Te in the skutterudites, we have suppressed the thermal conductivity and achieved a power factor of ~42 μW cm^?1 K^?2 at 530°C. A peak thermoelectric figure of merit (ZT) reaches ~1.1 at 530°C for CoSb_2.8Sn_0.005Te_0.195. This ZT value is comparable with that of some of the single-filled skutterudites.     

Filler-reduced phonon conductivity of thermoelectric skutterudites: Ab initio calculations and molecular dynamics simulations

The phonon conductivities of CoSb₃ and its Ba-filled structure Ba_x(CoSb₃)₄ are investigated using first-principle calculations and molecular dynamics (MD) simulations, along with the Green–Kubo theory. The effects of fillers on the reduction of the phonon conductivity of filled skutterudites are then explored. It is found that the coupling between filler and host is strong, with minor anharmonicity. The phonon density of states and its dispersion are significantly influenced by filler-induced softening of the host bonds (especially the short Sb–Sb bonds). Lattice dynamics and MD simulations show that, without a change in the host interatomic potentials, the filler–host bonding alone cannot lead to significant alteration of acoustic phonons or lowering of phonon conductivity. The observed smaller phonon conductivity of partially filled skutterudites is explained by treating it as a solid solution of the empty and fully filled structures.     

Electronic transport properties of Te-doped CoSb<Subscript>3</Subscript> skutterudites prepared by hot pressing

Te-doped CoSb₃ (CoSb_3−yTe_y) skutterudites were prepared by hot pressing and their electronic transport properties examined. A single δ-phase was successfully obtained. The Seebeck and Hall coefficients confirmed that all the Te-doped CoSb₃ showed n-type conduction. The Te atoms successfully acted as electron donors by substitution of the Sb atoms. The carrier concentration increased an order of 10²⁰ cm⁻³ by Te doping, whereas the carrier mobility decreased as the doping content increased. The Seebeck coefficient and electrical resistivity decreased with an increase in the Te content. The doping considerably reduced the thermal conductivity due to electron-phonon scattering. The lattice contribution was dominant over the electronic contribution.     

Microstructure and thermoelectric properties of CoSb2.75Ge0.25−xTex prepared by rapid solidification

Since the vibration modes of the pnicogen rings in CoSb₃-based skutterudites fall within the range of frequencies of heat-carrying phonons, disruption of the rings by doping should have a strong influence on heat transport in this material. To test the premise, single-phase double-doped CoSb_2.75Ge_0.25?xTe_x (x = 0.125–0.20) compounds were synthesized by combining melt spinning with a spark plasma sintering method. Following the melt-spinning process, the side of the ribbons contacting the copper drum is featureless and reflects its amorphous nature while the free surface of the ribbons is composed of 30–80 nm grains. After spark plasma processing the average grain size of the bulk samples is about 200 nm. High-resolution transmission electron microscopy images show an in situ nanostructure consisting of circular, 15 nm diameter dots of Te- and Ge-enriched skutterudite phase embedded in the skutterudite matrix. Transport properties were measured from 2 to 800 K as a function of Te and Ge content on the pnicogen (Sb) rings and the results were correlated with the structural data. Double-doping on pnicogen rings with Ge and Te, and using melt-spinning processing, results in binary skutterudite compounds that possess an impressive figure of merit of ZT ～ 1.1 at 750 K.     

Thermodynamic analysis of the filling fraction limits for impurities in CoSb3 based on ab initio calculations

The thermodynamic stabilities of alkaline earth (Ca, Sr and Ba), and rare earth (La, Ce and Yb), filled CoSb₃ skutterudites have been studied using a plane-wave density functional method. By combining the formation energy of inserting an impurity into the intrinsic void of CoSb₃ and that of secondary phases ISb₂ and CoSb₂, it is found that the filling fraction limit (FFL) or the maximum filling fraction of an impurity I corresponds to the minimum formation energy for a mixed chemical reaction route that results in the formation of filled skutterudite I_yCo₄Sb₁₂ at the maximum filling as well as the formation of secondary phases. Theoretically estimated FFLs of various impurities in the voids of CoSb₃ are in good agreement with the reported experimental data. A schematic phase diagram for filled CoSb₃ is given. Discussion on the effect of the ionic radius of a filler and the content of Sb on FFL is presented.     

Experimental determination of phase equilibrium in the Fe–Co–Sb ternary system

Phase stability and phase transformation were studied in the Fe–Co–Sb ternary system for the three sections: CoSb–Fe_0.56Sb_0.44, 30 at.% of Sb and 75 at.% of Sb. In the first section, we find a continuous solid solution without any secondary phase. The unit cell volume increases as a function of X_Fe/(X_Fe + X_Co). At 30 at.% of Sb, the B8 and the bcc-A₂ phases are obtained across the whole Fe–Co section. On the CoSb₃ side (75 at.% of Sb), Fe atoms cannot completely substitute for Co atoms in the skutterudite structure. Below 5 at.% of substitution of Fe for Co in CoSb₃, only the D0₂ phase is present while for high concentration of Fe, marcasite and Sb phases coexist.     

Enhanced thermoelectric performance of dual-element-filled skutterudites BaxCeyCo4Sb12

Single-phase polycrystalline dual-element-filled skutterudites Ba_xCe_yCo₄Sb₁₂ (0 < x < 0.4, 0 < y < 0.1) are synthesized by the melting–quenching–annealing and spark plasma sintering methods. The electrical conductivity, Seebeck coefficient, thermal conductivity and low-temperature Hall data of these compounds are reported. Our results suggest that there is essentially no difference in electrical transport properties between the dual-element-filled Ba_xCe_yCo₄Sb₁₂ and single-element-filled Ba_yCo₄Sb₁₂ systems. The Ba–Ce co-filling is more effective in lattice thermal conductivity reduction than Ba single filling in the temperature range of 300–850 K. Very low lattice thermal conductivity values less than 2.0 W m^?1 K^?1 are obtained at room temperature. Consequently, enhanced thermoelectric figure of merits (ZT) for these dual-element-filled CoSb₃ skutterudites are achieved at elevated temperatures, in particular ZT = 1.26 at 850 K for Ba_0.18Ce_0.05Co₄Sb_12.02.     

Electronic transport properties of Ni-doped CoSb<Subscript>3</Subscript> prepared by encapsulated induction melting

Ni-doped CoSb₃ skutterudites were prepared by encapsulated induction melting and their thermoelectric and electronic transport properties were investigated. The negative signs of Seebeck and Hal coefficients for all Ni-doped specimens revealed that Ni atoms successfully acted as n-type dopants by substituting Co atoms. The carrier concentration increased as the Ni doping content increased, and the Ni dopants could generate excess electrons. However, the carrier mobility decreased as the doping content increased, which indicates that the electron mean free path was reduced by the impurity scattering. The Seebeck coefficient and the electrical resistivity decreased as the carrier concentration increased, as the increase in carrier concentration by doping overcame the decrease in the carrier mobility by impurity scattering. The Seebeck coefficient showed a negative value at all temperatures examined and increased as the temperature increased. The temperature dependence of electrical resistivity suggested that Co_1−xNi_xSb₃ is a highly degenerate semiconducting material. Thermal conductivity was considerably reduced by Ni doping, and the lattice contribution was dominant in the Ni-doped CoSb₃.     

Dependence of thermoelectric behaviour on severe plastic deformation parameters: A case study on p-type skutterudite DD0.60Fe3CoSb12

High-pressure torsion (HPT), a severe plastic deformation technique, can effectively improve the thermoelectric performance of skutterudites, resulting in ZT values higher than for ball-milled and hot-pressed (BMHP) samples. In this paper the influence of the HPT parameters, i.e. the number of revolutions (equivalent to the applied strain), the processing temperature and the hydrostatic pressure on the microstructural and thermoelectric properties of the skutterudite DD_0.60Fe₃CoSb₁₂ are evaluated and compared with the BMHP samples before HPT processing. Whilst the three parameters have specific effects on (i) the crystallite size, (ii) the density of lattice defects and (ii) the density of cracks, a suitable combination thereof allows for an increase of the figure of merit by at least 20%.     

Synthesis and thermoelectric properties of CoSb3/WO3 thermoelectric composites

In this study, nano-sized WO₃ powder was dispersed into CoSb₃ powder by ball milling and CoSb₃/WO₃ thermoelectric composites were fabricated using hot-pressing sintering. The results showed that the WO₃ phase distributed uniformly in the form of clusters and the average size of cluster was lower than 4 μm. As the content of WO₃ increased, the electrical conductivity and Seebeck coefficient of CoSb₃/WO₃ composites decreased. The thermal conductivity of composites decreased obviously which resulted from the phonon scattering by the WO₃ inclusions locating on the grain boundaries of CoSb₃ matrix. The highest thermoelectric figure of merit ZT = 0.40 was achieved at 650 K for CoSb₃/2%WO₃ composite.     

Thermoelectric properties of Fe0.2Co3.8Sb12−xTex skutterudites

Skutterudites Fe_0.2Co_3.8Sb_12?xTe_x (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6) were synthesized by induction melting at 1273 K, followed by annealing at 923 K for 144 h. X-ray powder diffraction and electron microprobe analysis confirmed the presence of the skutterudite phase as the main phase. The temperature-dependent transport properties were measured for all the samples from 300 to 818 K. A positive Seebeck coefficient (holes are majority carriers) was obtained in Fe_0.2Co_3.8Sb₁₂ in the whole temperature range. Thermally excited carriers changed from n-type to p-type in Fe_0.2Co_3.8Sb_11.9Te_0.1 at 570 K, while in all the other samples, Fe_0.2Co_3.8Sb_12?xTe_x (x = 0.2, 0.3, 0.4, 0.5, 0.6) exhibited negative Seebeck coefficients in the entire temperature range measured. Whereas for the alloys up to x = 0.2 (Fe_0.2Co_3.8Sb_11.8Te_0.2) the electrical resistivity decreased by charge compensation, it increased for x > 0.2 with an increase in Te content as a result of an increase in the electron concentration. The thermal conductivity decreased with Te substitution owing to carrier–phonon scattering and point defect scattering. The maximum dimensionless thermoelectric figure of merit, ZT = 1.04 at 818 K, was obtained with an optimized Te content for Fe_0.2Co_3.8Sb_11.5Te_0.5 and a carrier concentration of ～n = 3.0 × 10²⁰ cm^?3 at room temperature. Thermal expansion (α = 8.8 × 10^?6 K^?1), as measured for Fe_0.2Co_3.8Sb_11.5Te_0.5, compared well with that of undoped Co₄Sb₁₂. A further increase in the thermoelectric figure of merit up to ZT = 1.3 at 820 K was achieved for Fe_0.2Co_3.8Sb_11.5Te_0.5, applying severe plastic deformation in terms of a high-pressure torsion process.