High‐Density Stretchable Electrode Grids for Chronic Neural Recording

Electrical interfacing with neural tissue is key to advancing diagnosis and therapies for neurological disorders, as well as providing detailed information about neural signals. A challenge for creating long‐term stable interfaces between electronics and neural tissue is the huge mechanical mismatch between the systems. So far, materials and fabrication processes have restricted the development of soft electrode grids able to combine high performance, long‐term stability, and high electrode density, aspects all essential for neural interfacing. Here, this challenge is addressed by developing a soft, high‐density, stretchable electrode grid based on an inert, high‐performance composite material comprising gold‐coated titanium dioxide nanowires embedded in a silicone matrix. The developed grid can resolve high spatiotemporal neural signals from the surface of the cortex in freely moving rats with stable neural recording quality and preserved electrode signal coherence during 3 months of implantation. Due to its flexible and stretchable nature, it is possible to minimize the size of the craniotomy required for placement, further reducing the level of invasiveness. The material and device technology presented herein have potential for a wide range of emerging biomedical applications.     

An Ultrastable and High‐Performance Flexible Fiber‐Shaped Ni–Zn Battery based on a Ni–NiO Heterostructured Nanosheet Cathode

Currently, the main bottleneck for the widespread application of Ni–Zn batteries is their poor cycling stability as a result of the irreversibility of the Ni‐based cathode and dendrite formation of the Zn anode during the charging–discharging processes. Herein, a highly rechargeable, flexible, fiber‐shaped Ni–Zn battery with impressive electrochemical performance is rationally demonstrated by employing Ni–NiO heterostructured nanosheets as the cathode. Benefiting from the improved conductivity and enhanced electroactivity of the Ni–NiO heterojunction nanosheet cathode, the as‐fabricated fiber‐shaped Ni–NiO//Zn battery displays high capacity and admirable rate capability. More importantly, this Ni–NiO//Zn battery shows unprecedented cyclic durability both in aqueous (96.6% capacity retention after 10 000 cycles) and polymer (almost no capacity attenuation after 10 000 cycles at 22.2 A g^?1) electrolytes. Moreover, a peak energy density of 6.6 µWh cm^?2, together with a remarkable power density of 20.2 mW cm^?2, is achieved by the flexible quasi‐solid‐state fiber‐shaped Ni–NiO//Zn battery, outperforming most reported fiber‐shaped energy‐storage devices. Such a novel concept of a fiber‐shaped Ni–Zn battery with impressive stability will greatly enrich the flexible energy‐storage technologies for future portable/wearable electronic applications.     

Exploration of Advanced Electrode Materials for Approaching High‐Performance Nickel‐Based Superbatteries

The surging interest in high performance, low‐cost, and safe energy storage devices has spurred tremendous research efforts in the development of advanced electrode active materials. Herein, the in situ growth of zinc–iron layered double hydroxide (Zn–Fe LDH) on graphene aerogel (GA) substrates through a facile, one‐pot hydrothermal method is reported. The strong interaction and efficient electronic coupling between LDH and graphene substantially improve interfacial charge transport properties of the resulting nanocomposite and provide more available redox active sites for faradaic reactions. An LDH–GA||Ni(OH)₂ device is also fabricated that results in greatly enhanced specific capacity (187 mAh g^?1 at 0.1 A g^?1), outstanding specific energy (147 Wh kg^?1), excellent specific power (16.7 kW kg^?1), along with 88% capacity retention after >10 000 cycles. This approach is further extended to Ni–MH and Ni–Cd batteries to demonstrate the feasibility of compositing with graphene for boosting the energy storage performance of other well‐known Ni‐based batteries. In contrast to conventional Ni‐based batteries, the nearly flat voltage plateau followed by a sloping potential profile of the integrated supercapacitor–battery enables it to be discharged down to 0 V without being damaged. These findings provide new prospects for the design of high‐performance and affordable superbatteries based on earth‐abundant elements.     

First‐Layer Effect in Graphene‐Enhanced Raman Scattering

Graphene as a substrate for enhancing Raman scattering, called graphene‐enhanced Raman scattering (GERS), has been reported in previous work. Herein, it is found that the “first‐layer effect”, which is widely used to explain the chemical‐enhanced mechanism in surface‐enhanced Raman scattering (SERS), exists in the GERS system. The Langmuir–Blodgett (LB) technique is used to construct mono‐ and multilayer ordered aggregates of protoporphyrin IX (PPP). Raman spectra of PPP with different layer numbers of the LB film on graphene are collected. The Raman signal from the first monolayer LB film of PPP has a larger contribution to the Raman enhancement than that from subsequent monolayers. Meanwhile, the Raman enhancement is dependent on the molecular configuration in contact with graphene, in which the functional group of PPP in direct contact with graphene has a stronger enhancement than other groups. These results reveal that GERS is strongly dependent on the distance between graphene and the molecule, which is convincing evidence that the Raman enhancement effect based on graphene belongs to the chemical‐enhanced mechanism. This discovery provides a convenient system for the study of the chemical‐enhanced mechanism and will benefit further understanding of SERS.     

Gate‐Controlled Graphene–Silicon Schottky Junction Photodetector

Various photodetectors showing extremely high photoresponsivity have been frequently reported, but many of these photodetectors could not avoid the simultaneous amplification of dark current. A gate‐controlled graphene–silicon Schottky junction photodetector that exhibits a high on/off photoswitching ratio (≈10⁴), a very high photoresponsivity (≈70 A W⁻¹), and a low dark current in the order of µA cm⁻² in a wide wavelength range (395–850 nm) is demonstrated. The photoresponsivity is ≈100 times higher than that of existing commercial photodetectors, and 7000 times higher than that of graphene‐field‐effect transistor‐based photodetectors, while the dark current is similar to or lower than that of commercial photodetectors. This result can be explained by a unique gain mechanism originating from the difference in carrier transport characteristics of silicon and graphene.