Application of Au-Sn eutectic bonding in hermetic radio-frequency microelectromechanical system wafer level packaging

Development of packaging is one of the critical issues toward realizing commercialization of radio-frequency-microelectromechanical system (RF-MEMS) devices. The RF-MEMS package should be designed to have small size, hermetic protection, good RF performance, and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low-temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at temperatures below 300°C is used. Au-Sn multilayer metallization with a square loop of 70 μm in width is performed. The electrical feed-through is achieved by the vertical through-hole via filling with electroplated Cu. The size of the MEMS package is 1 mm × 1 mm × 700 μm. The shear strength and hermeticity of the package satisfies the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.     

The Remarkable Thermal Stability of Amorphous In‐Zn‐O Transparent Conductors

Transparent conducting oxides (TCOs) are increasingly critical components in photovoltaic cells, low‐e windows, flat panel displays, electrochromic devices, and flexible electronics. The conventional TCOs, such as Sn‐doped In₂O₃, are crystalline single phase materials. Here, we report on In‐Zn‐O (IZO), a compositionally tunable amorphous TCO with some significantly improved properties. Compositionally graded thin film samples were deposited by co‐sputtering from separate In₂O₃ and ZnO targets onto glass substrates at 100 °C. For the metals composition range of 55–84 cation% indium, the as‐deposited IZO thin films are amorphous, smooth (R_RMS < 0.4 nm), conductive (σ ∼ 3000 Ω⁻¹ · cm⁻¹), and transparent in the visible (T_Vis > 90%). Furthermore, the amorphous IZO thin films demonstrate remarkable functional and structural stability with respect to heating up to 600 °C in either air or argon. Hence, though not completely understood at present, these amorphous materials constitute a new class of fundamentally interesting and technologically important high performance transparent conductors.     

The application of lead-free solder to optical fiber packaging

To achieve precise, hermetic, and reliable optoelectronic packaging, we studied a novel technology for bonding fibers to v-grooved chips by metallic soldering. Multilayered metallization of Ti/Au, Ti/Cu/Au, or Ti/Ni/Au has been prepared to improve the poor bonding nature of solder on oxide surface. The eutectic 43Sn57Bi (wt.%) alloy, having a melting point of 139°C, was selected to bond the fibers to v-grooved chips. The alignment and adhesion tests result show that the precision packaging by soldering has a satisfied reliability in the range of working temperature from −40°C to 85°C. The metallic solder bonding is hermetic, and hence, it can isolate the optical device from ambient environment.     

Poly(arylene piperidinium) Hydroxide Ion Exchange Membranes: Synthesis,Alkaline Stability,and Conductivity

A series of poly(arylene piperidinium)s (PAPipQs) devoid of any alkali‐sensitive aryl ether bonds or benzylic sites are prepared and studied as anion exchange membranes (AEMs) for alkaline fuel cells. First, the excellent alkaline stability of the model compound 4,4‐diarylpiperidinium is confirmed. Medium molecular weight poly(arylene piperidine)s are then synthesized in polycondensations of N‐methyl‐4‐piperidone and either bi‐ or terphenyl via superelectrophilic activation in triflic acid. Film‐forming PAPipQs are subsequently prepared in Menshutkin reactions with methyl, butyl, hexyl, and octyl halides, respectively. AEMs based on poly(terphenyl dimethylpiperidinium) show the best performance with no structural degradation detectable by ¹H NMR spectroscopy after storage in 2 m aq. NaOH at 60 °C after 15 d, and a mere 5% ionic loss at 90 °C. In the fully hydrated state these AEMs reach an OH^? conductivity of 89 mS cm^?1 at 80 °C. The presence of longer pendant N‐alkyl chains (butyl to octyl) is found to significantly promote Hofmann ring‐opening elimination reactions and the degradation rate increases with increasing alkyl chain length. The results of the present study demonstrate that PAPipQs are efficiently prepared from readily available monomers and show excellent alkaline stability and OH^? conductivity when devoid of pendant N‐alkyl chains.     

Reliability of power GaAs field-effect transistors

The first report on a comprehensive study of the reliability of power GaAs FET's with aluminum gates and silicon-nitride passivation is presented. A total of 265 standard 6-mm-wide devices has been aged under dc-bias conditions with and without RF drive at channel temperatures of 250, 210, and 175°C. One-million device-hours have been accumulated with no catastrophic failure. A very conservative estimate predicts that the failure rate for burnout at a maximum channel temperature in normal operation of 110°C would be below 100 FIT's. Degradation in the electrical parameters has been very slow even at 250°C channel temperature. It is estimated that the failure rate for gradual degradation at 110°C would be well below 100 FIT's and most likely lower than 10 FIT's. No deterioration in the properties of gates and ohmic contacts have been observed. Diagnostic characterization has revealed that gradual degradation in the sample devices is caused by deterioration in the channel material. There has been no noticeable difference in gradual degradation between devices aged with and without RF drive at the same channel temperature for more than 3000 h. The present study has already demonstrated that the power GaAs FET's used as the samples are very reliable.     

Precise Control of Lamellar Thickness in Highly Oriented Regioregular Poly(3‐Hexylthiophene) Thin Films Prepared by High‐Temperature Rubbing: Correlations with Optical Properties and Charge Transport

Precise control of orientation and crystallinity is achieved in regioregular poly(3‐hexylthiophene) (P3HT) thin films by using high‐temperature rubbing, a fast and effective alignment method. Rubbing P3HT films at temperatures T_R ≥ 144 °C generates highly oriented crystalline films with a periodic lamellar morphology with a dichroic ratio reaching 25. The crystallinity and the average crystal size along the chain axis direction, l_c, are determined by high‐resolution transmission electron microscopy and differential scanning calorimetry. The inverse of the lamellar period l scales with the supercooling and can accordingly be controlled by the rubbing temperature T_R. Uniquely, the observed exciton coupling in P3HT crystals is correlated to the length of the average planarized chain segments l_c in the crystals. The high alignment and crystallinity observed for T_R > 200 °C cannot translate to high hole mobilities parallel to the rubbing because of the adverse effect of amorphous zones interrupting charge transport between crystalline lamellae. Although tie chains bridge successive P3HT crystals through amorphous zones, their twisted conformation restrains interlamellar charge transport. The evolution of charge transport anisotropy is correlated to the evolution of the dominant contact plane from mainly face‐on (T_R ≤ 100 °C) to edge‐on (T_R ≥ 170 °C).     

Packaging of MMICs in multilayer LCP substrates

A 13-25-GHz GaAs bare die low noise amplifier is embedded inside a multilayer liquid crystal polymer (LCP) package made from seven layers of thin-film LCP. This new packaging topology has inherently unique properties that could make it an attractive alternative in some instances to traditional metal and ceramic hermetic packages. LCP is a near-hermetic material and its lamination process is at a relatively low temperature (285/spl deg/C versus >800/spl deg/C for ceramics). The active device is enclosed in a package consisting of several laminated C0/sub 2/ laser machined LCP superstrate layers. Measurements demonstrate that the LCP package and the 285/spl deg/C packaging process have minimal effects on the monolithic microwave integrated circuit radio frequency (RF) performance. These findings show that both active and passive devices can be integrated together in a homogeneous laminated multilayer LCP package. This active/passive compatibility demonstrates a unique capability of LCP to form compact, vertically integrated (3-D) RF system-on-a-package modules.     

High‐Tg Carbazole Derivatives as Blue‐Emitting Hole‐Transporting Materials for Electroluminescent Devices

A series of dicarbazolyl derivatives bridged by various aromatic spacers and decorated with peripheral diarylamines were synthesized using Ullmann and Pd‐catalyzed C–N coupling procedures. These derivatives emit blue light in solution. In general, they possess high glass‐transition temperatures (T_g > 125 °C) which vary with the bridging segment and methyl substitution on the peripheral amine. Double‐layer organic light‐emitting devices were successfully fabricated using these molecules as hole‐transporting and emitting materials. Devices of the configuration ITO/HTL/TPBI/Mg:Ag (ITO: indium tin oxide; HTL: hole‐transporting layer; TPBI: 1,3,5‐tris(N‐phenylbenzimidazol‐2‐yl)benzene) display blue emission from the HTL layer. The EL spectra of these devices appear slightly distorted due to the exciplex formation at the interfaces. However, for the devices of the configuration ITO/HTL/Alq₃/Mg:Ag (Alq₃ = tris(8‐hydroxyquinoline)aluminum) a bright green light from the Alq₃ layer was observed. This clearly demonstrates the facile hole‐transporting property of the materials described here.     

Tin Dioxide Sensing Layer Grown on Tubular Nanostructures by a Non‐Aqueous Atomic Layer Deposition Process

A new atomic layer deposition (ALD) process for nanocrystalline tin dioxide films is developed and applied for the coating of nanostructured materials. This approach, which is adapted from non‐hydrolytic sol‐gel chemistry, permits the deposition of SnO₂ at temperatures as low as 75 °C. It allows the coating of the inner and outer surface of multiwalled carbon nanotubes with a highly conformal film of controllable thickness. The ALD‐coated tubes are investigated as active components in gas‐sensor devices. Due to the formation of a p‐n heterojunction between the highly conductive support and the SnO₂ thin film an enhancement of the gas sensing response is observed.     

基于76.2 mm圆片工艺的GaN HEMT可靠性评估

报道了利用76.2 mm圆片工艺实现了SiC衬底GaN HEMT微波功率管的研制,并对其进行了多项试验以评估其可靠性.器件工艺中通过引入难熔金属作器件肖特基势垒,有效提高了GaN HEMT器件肖特基势垒的热稳定性,经过500℃高温处理30 s后器件肖特基特性依然保持稳定.随后的高温工作寿命试验表明,该GaNHEMT能够...     

Highly Thermal Stable and Efficient Organic Photovoltaic Cells with Crosslinked Networks Appending Open‐Cage Fullerenes as Additives

Highly thermal stable organic bulk heterojunction (OBHJ) photovoltaic cells are demonstrated with crosslinkable open‐cage fullerenes ( COF ) as additives in the active layer. Partial incorporation of COF , ≈10–15 wt% with weight ratio of P3HT: PC₆₁BM = 1:0.9, builds up three‐dimensional local borders upon heating treatment at 150 °C for 10 min. This process induces crosslinking chemical reaction through activating the styryl moiety in COF and reduces phase aggregation rates of fullerenes materials. Supported by statistics of devices degradation data analysis and optical microscopy study, the devices with COF show longer lifetime with keeping their efficiency (t = 144 h) under accelerated heating test at 150 °C, while PCE of normal devices without COF drop dramatically. These results demonstrate that the thermally crosslinkable COF is an excellent additive for highly thermal stable and durable OPVs applications.     

Elucidating the Metal-Induced Crystallization and Diffusion Behavior of Al/a-Ge Thin Films

As used in wafer-level bonding in microelectromechanical system (MEMS) devices, the eutectic Al/a-Ge bilayer is characterized by its remarkable hermetic sealing after annealing. For MEMS packaging, this study investigates metal-induced crystallization (MIC) of the amorphous Ge and the layer exchange of Al and Ge, mainly by scanning electron microscopy (SEM), energy-dispersive x-ray (EDX) analysis, and x-ray photoelectron spectroscopy (XPS). A kinetic mechanism to explain the layer exchange of Al and Ge is developed. Experimental results indicate that round-shaped extrusions form on the upper surface of the Ge layer when the bilayer is annealed at 400°C, i.e., close to the Al-Ge eutectic temperature. The morphology and the formation of the extrusions are also discussed. Finally, the bilayer is tested by immersion in red ink, with these results indicating that no red ink penetrates the bonding area of two bonded bilayer films. Therefore, results of this study demonstrate the feasibility of applying the eutectic Al/a-Ge bilayer to MEMS as a hermetic sealing material.     

Temperature‐Memory Effect of Copolyesterurethanes and their Application Potential in Minimally Invasive Medical Technologies

Minimally invasive surgery often requires devices that can change their geometry or shape when placed inside the body. Here, the potential of thermoplastic temperature‐memory polymers (TMP) for the design of intelligent devices, which can be programmed by the clinician to individually adapt their shifting geometry and their response temperature T_sw to the patient's needs, is explored. Poly(ω‐pentadecalactone) as hard segments and poly(?‐caprolactone) segments acting as crystallizable controlling units for the temperature‐memory effect (TME) are chosen to form multiblock copolymers PDLCL. These components are selected according to their thermal properties and their good biocompatibility. Response temperatures obtained under stress‐free and constant strain recovery can be systematically adjusted by variation of the deformation temperature in a temperature range from 32 °C to 65 °C, which is the relevant temperature range for medical applications. The working principle of TMP based instruments for minimally invasive surgical procedures is successfully demonstrated using three temperature‐memory catheter concepts: individually programmable TM‐catheter, an in‐situ programmable TM‐catheter, and an intelligent drainage catheter for gastroenterology.     

High‐Strain Shape‐Memory Polymers

Shape‐memory polymers (SMPs) are self‐adjusting, smart materials in which shape changes can be accurately controlled at specific, tailored temperatures. In this study, the glass transition temperature (T_g) is adjusted between 28 and 55 °C through synthesis of copolymers of methyl acrylate (MA), methyl methacrylate (MMA), and isobornyl acrylate (IBoA). Acrylate compositions with both crosslinker densities and photoinitiator concentrations optimized at fractions of a mole percent demonstrate fully recoverable strains at 807% for a T_g of 28 °C, at 663% for a T_g of 37 °C, and at 553% for a T_g of 55 °C. A new compound, 4,4′‐di(acryloyloxy)benzil (referred to hereafter as Xini) in which both polymerizable and initiating functionalities are incorporated in the same molecule, was synthesized and polymerized into acrylate shape‐memory polymers, which were thermomechanically characterized yielding fully recoverable strains above 500%. The materials synthesized in this work were compared to an industry standard thermoplastic SMP, Mitsubishi's MM5510, which showed failure strains of similar magnitude, but without full shape recovery: residual strain after a single shape‐memory cycle caused large‐scale disfiguration. The materials in this study are intended to enable future applications where both recoverable high‐strain capacity and the ability to accurately and independently position T_g are required.     

Efficient Deep‐Blue Organic Light‐Emitting Diodes: Arylamine‐Substituted Oligofluorenes

Novel deep‐blue‐light‐emitting diphenylamino and triphenylamino end‐capped oligofluorenes were synthesized by double palladium‐catalyzed Suzuki cross‐coupling of dibromo‐oligofluorene with the corresponding boronic acid as a key step. These oligofluorenes exhibit deep‐blue emission (λ^em_max = 429–432 nm), low and reversible electrochemical oxidation (highest occupied molecular orbital = 5.15–5.20 eV), high fluorescence quantum yield (Φ_FL = 0.61–0.93), and good thermal properties (glass‐transition temperature, T_g = 99–195 °C and decomposition temperature, T_dec > 450 °C). Remarkably, saturated deep‐blue organic light‐emitting diodes, made from these oligofluorenes as dopant emitters, have been achieved with excellent performance and maximum efficiencies up to 2.9 cd A^–1 at 2 mA cm^–2 (external quantum efficiency of 4.1 %) and with Commission Internationale de l'Éclairage (x,y) coordinates of (0.152,0.08), which is very close to the National Television System Committee standard blue.     

Ambipolar Conductive 2,7‐Carbazole Derivatives for Electroluminescent Devices

A series of 2,7‐disubstituted carbazole (2,7‐carb) derivatives incorporating arylamines at the 2 and 7 positions are synthesized via palladium‐catalyzed C–N or C–C bond formation. These compounds possess glass transition temperatures ranging from 87 to 217 °C and exhibit good thermal stabilities, with thermal decomposition temperatures ranging from 388 to 480 °C. They are fluorescent and emit in the purple‐blue to orange region. Two types of organic light emitting diodes (OLEDs) were constructed from these compounds: (I) indium tin oxide (ITO)/2,7‐carb (40 nm)/1,3,5‐tris(N‐phenylbenzimidazol‐2‐yl)benzene (TPBI, 40 nm)/Mg:Ag; and (II) ITO/2,7‐carb (40 nm)/tris(8‐hydroxyquinoline) aluminum (Alq₃, 40 nm)/Mg:Ag. In type I devices, the 2,7‐disubstituted carbazoles function as both hole‐transporting and emitting material. In type II devices, light is emitted from either the 2,7‐disubstituted carbazole layer or Alq₃. The devices appear to have a better performance compared to devices fabricated with their 3,6‐disubstituted carbazole congeners. Some of the new compounds exhibit ambipolar conductive behavior, with hole and electron mobilities up to 10^–4 cm² V^–1 s^–1.     

Chiral Stereoisomer Engineering of Electron Transporting Materials for Efficient and Stable Perovskite Solar Cells

A series of chiral stereoisomers of electron transporting materials with two chiral substituents is rationally designed and synthesized, and the influence of stereoisomerism on their physical and electronic properties is investigated to demonstrate highly efficient and stable perovskite solar cells (PSCs). Compared to mesomeric naphthalene diimide (NDI) derivatives, which have heterochiral side groups with centrosymmetric molecular packing of symmetric‐shaped conformers in the crystalline state, enantiomeric NDI derivatives have homochiral side groups that exhibit non‐centrosymmetric molecular packing of asymmetric‐shaped conformers in the crystalline state and exhibit better solution processability based on one order of magnitude higher solubility. A similar trend is observed in different rylene diimide stereoisomers based on larger semiconducting core perylene diimide. The PSCs based on NDI enantiomers with good film‐forming ability and a very high lowest phase transition temperature (T_lowest) of 321 °C exhibit a high and uniform average power conversion efficiency (PCE) of 19.067 ± 0.654%. These PSCs also have a high temporal device stability, with less than 10% degradation of the PCE at 100 °C for 1000 h without encapsulation. Therefore, chiral stereoisomer engineering of charge transporting materials is a potential approach to achieve high solution processability, excellent performance, and significant temporal stability in organic electronic devices.     

AuSn合金在电子封装中的应用及研究进展

AuSn合金焊料因其具有优良的抗腐蚀、抗疲劳特性和高强度、高可靠性等优点而在气密性封装、射频和微波封装、发光二极管(LED)、倒装芯片(Flip-chip)、激光二极管(LD)、芯片尺寸封装(CSP)等方面得到广泛的应用。从电子封装无铅化和合金焊料的可靠性等方面,对AuSn合金焊料的物相结构和材料性能进行了讨论,并对AuSn合金焊料在电子封装中的应用及其研究进展进行了总结和展望。     

Thermally Stable Silver Nanowire–Polyimide Transparent Electrode Based on Atomic Layer Deposition of Zinc Oxide on Silver Nanowires

The performance of a flexible transparent conductive electrode with extremely smooth topography capable of withstanding thermal processing at 300 °C for at least 6 h with little change in sheet resistance and optical clarity is reported. In depth investigation is performed on atomic layer deposition (ALD) deposited ZnO on Ag nanowires (NWs) with regard to thermal and atmospheric corrosion stability. The ZnO coated nanowire networks are embedded within the surface of a polyimide matrix, and the <2 nm roughness freestanding ­electrode is used to fabricate a white polymer light emitting diode (PLED). PLEDs obtained using the ZnO‐AgNW‐polyimide substrate exhibit comparable performance to indium tin oxide (ITO)/glass based devices, verifying its efficacy for use in optoelectronic devices requiring high processing temperatures.     

Efficient Charge Injection in Organic Field‐Effect Transistors Enabled by Low‐Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer

Charge injection at metal/organic interface is a critical issue for organic electronic devices in general as poor charge injection would cause high contact resistance and severely limit the performance of organic devices. In this work, a new approach is presented to enhance the charge injection by using atomic layer deposition (ALD) to prepare an ultrathin vanadium oxide (VO_x) layer as an efficient hole injection interlayer for organic field‐effect transistors (OFETs). Since organic materials are generally delicate, a gentle low‐temperature ALD process is necessary for compatibility. Therefore, a new low‐temperature ALD process is developed for VO_x at 50 °C using a highly volatile vanadium precursor of tetrakis(dimethylamino)vanadium and non‐oxidizing water as the oxygen source. The process is able to prepare highly smooth, uniform, and conformal VO_x thin films with precise control of film thickness. With this ALD process, it is further demonstrated that the ALD VO_x interlayer is able to remarkably reduce the interface contact resistance, and, therefore, significantly enhance the device performance of OFETs. Multiple combinations of the metal/VO_x/organic interface (i.e., Cu/VO_x/pentacene, Au/VO_x/pentacene, and Au/VO_x/BOPAnt) are examined, and the results uniformly show the effectiveness of reducing the contact resistance in all cases, which, therefore, highlights the broad promise of this ALD approach for organic devices applications in general.