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Organic light‐emitting diodes (OLEDs) have rapidly progressed in recent years due to their unique characteristics and potential applications in flat panel displays. Significant advancements in top‐emitting OLEDs have driven the development of large‐size screens and microdisplays with high resolution and large aperture ratio. After a brief introduction to the architecture and types of top‐emitting OLEDs, the microcavity theory typically used in top‐emitting OLEDs is described in detail here. Then, methods for producing and understanding monochromatic (red, green, and blue) and white top‐emitting OLEDs are summarized and discussed. Finally, the status of display development based on top‐emitting OLEDs is briefly addressed.  相似文献   

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Harvesting of both triplets and singlets yields electroluminescence quantum efficiencies of nearly 100% in organic light‐emitting diodes (OLEDs), but the production efficiency of excitons that can undergo radiative decay is theoretically limited to 100% of the electron–hole pairs. Here, breaking of this limit by exploiting singlet fission in an OLED is reported. Based on the dependence of electroluminescence intensity on an applied magnetic field, it is confirmed that triplets produced by singlet fission in a rubrene host matrix are emitted as near‐infrared (NIR) electroluminescence by erbium(III) tris(8‐hydroxyquinoline) (ErQ3) after excitonic energy transfer from the “dark” triplet state of rubrene to an “emissive” state of ErQ3, leading to NIR electroluminescence with an overall exciton production efficiency of 100.8%. This demonstration clearly indicates that the harvesting of triplets produced by singlet fission as electroluminescence is possible even under electrical excitation, leading to an enhancement of the quantum efficiency of the OLEDs. Electroluminescence employing singlet fission provides a route toward developing high‐intensity NIR light sources, which are of particular interest for sensing, optical communications, and medical applications.  相似文献   

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The design of thermally activated delayed fluorescence (TADF) materials both as emitters and as hosts is an exploding area of research. The replacement of phosphorescent metal complexes with inexpensive organic compounds in electroluminescent (EL) devices that demonstrate comparable performance metrics is paradigm shifting, as these new materials offer the possibility of developing low‐cost lighting and displays. Here, a comprehensive review of TADF materials is presented, with a focus on linking their optoelectronic behavior with the performance of the organic light‐emitting diode (OLED) and related EL devices. TADF emitters are cross‐compared within specific color ranges, with a focus on blue, green–yellow, orange–red, and white OLEDs. Organic small‐molecule, dendrimer, polymer, and exciplex emitters are all discussed within this review, as is their use as host materials. Correlations are provided between the structure of the TADF materials and their optoelectronic properties. The success of TADF materials has ushered in the next generation of OLEDs.  相似文献   

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Inter‐ and intramolecular charge‐transfer processes are combined using an exciplex‐forming host and a thermally activated delayed fluorescent dopant, for fabricating efficient fluorescent organic light‐emitting diodes along with the reduced efficiency roll‐off at high current densities. Extra conversion on the host from triplet exciplexes to singlet exciplexes followed by energy transfer to the dopant reduces population of triplet excitons on dopant molecules, thereby reducing the triplet exciton annihilations at high current densities.  相似文献   

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Highly efficient, yellow‐fluorescent organic light‐emitting diodes with a maximum external quantum efficiency exceeding 25.0% and extended lifetime are reported using iridium‐complex sensitizers doped in an exciplex host. Energy transfer processes reduce the lifetime of the exciplex and excitons on the Ir complexes and enable an excited state to exist in a conventional fluorescent emitter, thereby increasing device lifetime. The device stability depends on the location of the excited state.  相似文献   

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Degradation in organic light‐emitting diodes (OLEDs) is a complex problem. Depending upon the materials and the device architectures used, the degradation mechanism can be very different. In this Progress Report, using examples in both small molecule and polymer OLEDs, the different degradation mechanisms in two types of devices are examined. Some of the extrinsic and intrinsic degradation mechanisms in OLEDs are reviewed, and recent work on degradation studies of both small‐molecule and polymer OLEDs is presented. For small‐molecule OLEDs, the operational degradation of exemplary fluorescent devices is dominated by chemical transformations in the vicinity of the recombination zone. The accumulation of degradation products results in coupled phenomena of luminance‐efficiency loss and operating‐voltage rise. For polymer OLEDs, it is shown how the charge‐transport and injection properties affect the device lifetime. Further, it is shown how the charge balance is controlled by interlayers at the anode contact, and their effects on the device lifetime are discussed.  相似文献   

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Recently, great progress has been made in the device performance of deep blue phosphorescent organic light‐emitting diodes (PHOLEDs) by developing high triplet energy charge‐transport materials, high triplet energy host and deep blue emitting phosphorescent dopant materials. A high quantum efficiency of over 25% and a high power efficiency of over 15 lm/W have already been achieved at 1000 cd m?2 in the deep blue PHOLEDs with a y color coordinate less than 0.20. In this work, recent developments in organic materials for high efficiency deep blue PHOLEDs are reviewed and a future strategy for the development of high efficiency deep blue PHOLEDs is proposed.  相似文献   

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In the last few years the GaN‐based white light‐emitting diode (LED) has been remarkable as a commercially available solid‐state light source. To increase the luminescence power, we studied GaN LED epitaxial materials. First, a special maskless V‐grooved c‐plane sapphire was fabricated, a GaN lateral epitaxial overgrowth method on this substrate was developed, and consequently GaN films are obtained with low dislocation densities and an increased light‐emitting efficiency (because of the enhanced reflection from the V‐grooved plane). Furthermore, anomalous tunneling‐assisted carrier transfer in an asymmetrically coupled InGaN/GaN quantum well structure was studied. A new quantum well structure using this effect is designed to enhance the luminescent efficiency of the LED to ~72%. Finally, a single‐chip phosphor‐free white LED is fabricated, a stable white light is emitted for currents from 20 to 60 mA, which makes the LED chip suitable for lighting applications.  相似文献   

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Organic light‐emitting diodes (OLEDs) based on thermally activated delayed fluorescence‐sensitized fluorescence (TSF) offer the possibility of attaining an ultimate high efficiency with low roll‐off utilizing noble‐metal free, easy‐to‐synthesize, pure organic fluorescent emitters. However, the performances of TSF‐OLEDs are still unsatisfactory. Here, TSF‐OLEDs with breakthrough efficiencies even at high brightnesses by suppressing the competitive deactivation processes, including direct charge recombination on conventional fluorescent dopants (CFDs) and Dexter energy transfer from the host to the CFDs, are demonstrated. On the one hand, electronically inert terminal‐substituents are introduced to protect the electronically active core of the CFDs; on the other hand, delicate device structures are designed to provide multiple energy‐funneling paths. As a result, unprecedentedly high maximum external quantum efficiency/power efficiency of 24%/71.4 lm W?1 in a green TSF‐OLED are demonstrated, which remain at 22.6%/52.3 lm W?1 even at a high luminance of 5000 cd m?2. The work unlocks the potential of TSF‐OLEDs, paving the way toward practical applications.  相似文献   

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The development of host materials with high performance is essential for fabrication of efficient and stable organic light‐emitting diodes (OLEDs). Although host materials used in OLEDs are typically organics, in this study, it is shown that the organic–inorganic perovskite CH3NH3PbCl3 (MAPbCl3) can be used as a host layer for OLEDs. Vacuum‐evaporated MAPbCl3 films have a wide band gap of about 3 eV and very high and relatively balanced hole and electron mobilities, which are suitable for the host material. Photoluminescence and electroluminescence take place through energy transfer from MAPbCl3 to an organic emitter in films. Incorporation of an MAPbCl3 host layer into OLEDs leads to a reduction of driving voltage and enhancement of external quantum efficiency as compared to devices with a conventional organic host layer. Additionally, OLEDs with an MAPbCl3 host layer demonstrate very good operational stability under continuous current operation. These results can be extensively applied to organic‐ and perovskite‐based optoelectronics.  相似文献   

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