S波段2.5MW宽频带大功率速调管的研制

本文讨论了大功率、高增益、宽频带大功率速调管的设计和制造,还采用小信号增益和大信号效率计算程序,对宽频带速调管的群聚段进行了设计。当小信号增益大于50dB时,7腔速调管的群聚频宽宽于10％,8腔速调管的群聚频宽可达1015％ 给出了两类宽频带输出电路,即滤波器型输出电路和重叠模双间隙腔输出电路的设计方法和测试结果,结果表明:前一种输出电路的频宽可达7.510％,后一种输出电路的频宽可达1015％。 研制了两种类型速调管,采用滤波器型输出段的速调管的性能达到:1dB等激励频宽为7.5％,效率为38％,饱和增益大于43dB,输出功率大于2.5MW。采用双间隙腔输出段的速调管的1dB等激励频宽迟10％,工作稳定。     

S 波段连续波速调管宽带输出电路的设计与测试

本文开展了一种用于通信系统的4.6%带宽的S 波段连续波宽带速调管KS4158 的研制工作,重点研究了该速调管的宽带输出电路,详细介绍了宽带输出电路的两种设计方案：滤波器加载重叠模双间隙耦合腔宽带输出电路和三节滤波器加载宽带输出电路。文中还介绍了基于矢量网络分析仪的宽带输出电路的扫频测量法,给出了这两种宽带输出电路的测试结果。最后,给出了分别采用上述两种宽带输出电路方案的两只速调管的测试结果,并对这两种方案进行了分析和比较,其中采用三节滤波器加载宽带输出电路方案的样管的连续波输出功率大于17kW,瞬时带宽大于4.6%。     

Broad-band distributed amplifier impedance-matching techniques

A circuit concept is developed which allows impedance transformations to be performed over extremely broad bandwidths. The transformation is obtained by coupling one or more input or output lines of a distributed amplifier into several output or input lines, respectively. The circuit technique is demonstrated by results for an amplifier for a 1:2 impedance transformation over a 2-20-GHz bandwidth. The amplifier yields a voltage standing wave ratio (VSWR) of better than 1.7:1 into 25 Ω at the input and better than 1.5:1 into 50 Ω at the output while maintaining a gain of 9±1 dB. An application of the technique to the broadband impedance-matching problem of a laser diode driver is discussed. The circuit has a gain of 8.5±1 dB from 0.5 to 12.5 GHz and better than 10 dB return loss at both the input and output     

10%带宽兆瓦级速调管放大器

正 长期以来,人们对雷达发射机用的兆瓦级末级发射管的效率-带宽特性和增益-带宽特性一直很感兴趣。而且雷达对发射管相位-频率线性,增益平坦性和功率幅值平坦性的要求也越来越高。但是目前微波管产品中,尚没有在这样的功率电平下带宽宽于10％的管子。由于速调管在大功率、高增益、高效率等方面与其他微波管相比,仍占有较大的优势,因此,近十几年来,国际上许多微波管公司,厂家在展宽速调管带宽方面仍进行着不少具有实际意义的研究工作     

宽带放大电路设计

宽带放大器是上限工作频率与下限工作频率之比远大于1的放大电路。这类电路主要用于对视频信号、脉冲信号或射频信号的放大。本设计以低噪声放大器OPA820为核心,5V单电源供电,设计并制作了带宽为10MHz的宽带放大器。整个系统增益可达45dB,最大输出电压峰峰值为10V左右,设计采用科学,合理的排版方式,避免了宽带放大器的自激影响,保证整个系统工作可靠、稳定。     

S波段宽带连续波速调管的研制

本文介绍了一种用于通信系统的S波段宽带连续波速调管,详细给出了两种宽带输出电路：滤波器加载重叠模双间隙耦合腔宽带输出电路和三节滤波器加载宽带输出电路的设计、计算和测试结果。最后,给出了分别采用上述两种宽带输出电路的速调管样管的测试结果,其中采用三节滤波器加载宽带输出电路方案的样管在大于4.6%的瞬时带宽内获得的连续波输出功率大于17 kW。     

L波段多注速调管同轴线滤波器宽带输出回路的研究和设计

该文设计了一个相对工作带宽超过14％、可用于L波段多注速调管的宽带输出回路四耦合槽模强耦合双间隙腔加载同轴线滤波器,并对其进行详细地分析和计算。研究结果表明,在较低频率波段宽带速调管中,采用同轴线滤波器的宽带输出回路是完全可行的,并且具有更大的输出带宽潜力和较小的体积,特别有利于整管的小型化。     

矩形π-TM310模双间隙腔加载同轴滤波器型宽带输出电路的实验研究

本文详细介绍了矩形π-TM310模双间隙腔同轴滤波器型输出电路的实验研究过程,以及针对一些关键技术难点所采取的改进措施.测试数据显示,矩形π-TM310模双间隙腔与输出同轴线的耦合强度适中,其外观品质因数30左右,在加载同轴线之后各个电子注孔特性阻抗的均匀度仍然较好;矩形π-TM310模双间隙腔同轴滤波器型输出电路的输...     

Harmonic gain and noise in a frequency-doubling gyro-amplifier

Nonlinear gain in a 34-GHz three-stage frequency-doubling gyro-traveling wave tube (gyro-TWT) has been experimentally studied. The device consists of a thermionic electron gun, TE/sub 01//spl rarr/TE/sub 02/ fundamental gyro-TWT input section, second harmonic TE/sub 03/ intermediate buncher section, and a second harmonic TE/sub 02//spl rarr/TE/sub 04/ complex output circuit. Nonlinear bunching in the electron orbital phase generates harmonics of the input signal in the beam current, which excite the subsequent circuits at the second harmonic frequency. Since the gain is nonlinear, noise or applied sideband signals intermodulate with the carrier generating high-order products in the output. Therefore, it has been suggested that the noise figure of these devices may be unreasonably high. In this study, the complex harmonic transfer characteristics were experimentally measured and compared with calculations based on the assumption that the gyro-amplifier gain can be described, in the narrowband sense, as a classical frequency-doubling circuit. The results show that narrowband intermodulation gain is 6 dB higher than the carrier as predicted in the small signal limit, but as the device reaches saturation the nonlinear products become suppressed with respect to the carrier. Tests on the broadband gain characteristics show that output noise consists of second harmonic shot noise spontaneously excited in the output circuits along with the products of the intermodulation between external noise and the carrier. Good agreement between the experimental results and the calculations is demonstrated.     

A calibrated direct conversion front-end transmitter with resonant matching techniques for mobile WiMAX/WiBro applications

A direct conversion front-end transmitter with the properties of high linearity and high single sideband rejection ratio is described in this paper. The transmitter employs two resonant matching techniques to improve its operating bandwidth. The first resonant circuit design is applied at the inter-stage of the LO input buffer in order to achieve a wideband frequency response which ranges from dc to 6 GHz. The second resonant circuit is applied at the power amplifier (PA) driver output stage to increase the matching bandwidth and meet both the Worldwide Interoperability for Microwave Access (WiMAX) and Wireless Broadband (WiBro) applications simultaneously. In addition, the sideband signal and carrier leakage of this transmitter are further minimized by a proposed calibration circuit design to achieve the error vector magnitude (EVM) specifications. The measured single sideband performance with calibration mechanism demonstrates approximately 15 dB improvement on sideband and carrier suppression. The rejected sideband and carrier signals can be up to 55.19 and 56.31 dBc, respectively. The measured dynamic gain range of the transmitter is 53 dB in 1-dB step with a maximum relative gain error lower than 0.4 dB. The transmitter delivers +0.766 dBm output power with EVM of −34.687 dB for the orthogonal frequency division multiple access (OFDMA) 64QAM-3/4 modulated signals. The measured constellation is minimized to be <1.5% with output power from −2.3 to −36.2 dBm.     

Broadband high-power TRAPATT diode amplifier at S band

This letter describes the use of a coupled TEM line circuit with high-power high-efficiency silicon avalanche diodes to achieve broadband pulsed amplification in S band. An output power of 50 W, with 6 dB gain and 10% instantaneous 3 dB bandwidth centred at 2.7 GHz, has been obtained.     

Cascaded single-stage distributed amplifier using DPHEMT devices for multioctave performance

This paper describes a multioctave (2–18 GHz) distributed amplifier design using the concept of cascaded reactively terminated single-stage distributed amplifier (CRTSSDA) configuration for EW applications. The concept of CRTSSDA is demonstrated to provide broadband performance with high gain, reduced power consumption, circuit stability and superior power-added efficiency compared to conventional distributed amplifiers using the same number of active devices. The broadband amplifier employing three-CRTSSDA is designed and fabricated using three different DPHEMT devices in the three respective stages of the design to further enhance the amplifier’s efficiency performance. The amplifier achieved an associated gain level above 26 dB with flatness of <± 0.5 dB, an average power-added efficiency in access of 27% at an output power of 25 dBm across 2–18 GHz with an efficiency peak of 30% at 12 GHz. The input and output VSWR of better than 2:1 was achieved. Furthermore, the CRTSSDA provides a cost-effective solution when compared to the conventional travelling wave amplifier as only half the number of active devices is used. Fabrication of the amplifier was carried out by using the conventional thin-film microwave integrated circuit technology. The CRTSSDA is also disposed to realization by monolithic circuit technology.     

Mismatch reduction technique for transistors with minimum channel length

An analog calibration technique is presented to improve the parameter matching between transistors in the differential high-frequency signal path of analog CMOS circuits. It can be applied for mismatch reduction in differential broadband amplifiers and direct down-conversion mixers in which short-channel devices are utilized to minimize bandwidth reduction from parasitic capacitances. In general, the proposed methodology is suitable for radio frequency (RF) applications in which direct matching of the transistors is undesired because sophisticated layout practices would increase the coupling between the high-frequency paths. The approach involves auxiliary devices which sense the existing mismatch as part of a feedback loop for error minimization. This technique is demonstrated with a differential amplifier that has a loaded gain and −3 dB frequency of 12.9 dB and 2.14 GHz, respectively. It was designed in 90 nm CMOS technology with a 1.2 V supply. Monte Carlo simulations indicate that the 4.06 mV standard deviation of the amplifier’s anticipated input-referred offset voltage improves to 0.76–1.28 mV with the mismatch reduction loop, which is contingent on the layout configuration of the calibration circuitry. The associated drain current mismatch reduction for the transistor pair under calibration in the amplifier core is from 3.1% to 0.6–1.0%.     

带温度补偿的Ka波段CMOS堆叠功率放大器设计

介绍了一款基于55 nm CMOS工艺,带温度补偿电路的Ka波段堆叠高效功率放大器（power amplifier,PA）.采用了一种新型的针对晶体管堆叠结构的温度补偿电路,该补偿电路由两个二极管和四个电阻组成,结构简单,易于实现.通过调整堆叠放大器各个栅极偏置电路中的电压,使得PA随温度变化的增益和输出功率得到有效补偿,增强了电路的可靠性和热稳定性.基于Agilent ADS软件的版图仿真结果显示:电路的最大输出功率为20.1 dBm,频带内功率附加效率（power additional efficiency,PAE）为20%~30%,大信号功率-1 dB带宽为15 GHz（46%）.在-40℃到125℃的温度范围内,采用新型温补偏置电路与传统偏置电路相比,小信号增益的温度波动从2.2 dB改善到0.1 dB,显著提高了功放的热稳定性,证明了所提出的温度补偿电路对于在宽温度范围内校正功率放大器增益变化的有效性.     

Body effect up- and down-conversion mixer circuits for low-voltage ultra-wideband operation

This article presents fully differential up- and down-conversion mixer circuits manufactured in a triple well 45 nm CMOS process for low-voltage Ultra-Wideband transmitter and receiver applications. The proposed circuits both employ the transistor bulk terminal for signal injection. While the down-conversion mixer uses the bulk for switching via threshold voltage modulation, the up-conversion mixer applies the baseband signal to the bulk, thereby implicitly incorporating the back-gate controlled current source of the MOS transistor. Both circuits offer resistive on-chip termination and DC coupled output buffering for measurement purposes. The down-conversion mixer features an input-referred compression point of −13.2 dBm and a maximum conversion gain of 9.4 dB at 2.5 GHz with the 3-dB corner frequency being beyond 10 GHz. The implemented up-conversion mixer offers a maximum conversion gain of −8.8 dB at 5.8 GHz together with an output-referred compression point of −9.7 dBm. The operational bandwidth ranges from 4.5 to 6.7 GHz. Both circuits operate at a low supply voltage of 1.1 V.     

矩形π-TM310 双间隙腔加载同轴滤波器型宽带输出电路研究

本文提出了矩形π-TM310 双间隙腔加载同轴滤波器型宽带输出电路,并对其可行性进行了论证,对高次模双间隙腔中非工作模式的干扰程度和同轴线输出电路的功率容限等重要问题做了定量分析。我们通过调整矩形双间隙腔的长宽比例并采用凹入结构,明显扩大了π-TM310模与相邻非工作模的频率间隔,有效抑制了非工作模式的干扰;又采用了非常规的电子注孔布局,使各个电子注孔的特性阻抗更均匀,而且在加载同轴滤波器之后仍然很均匀。研究结果表明,经过优化设计的矩形π-TM310 双间隙腔加载同轴滤波器型输出电路具有很宽的输出频带,在X波段相对带宽达到14%左右。但由于π模双间隙腔与同轴线的耦合口较小,而且该处还有短路销钉,导致其输出功率容限较低,约为几百kW。因此,该类输出电路比较适合于X波段或更高频段的中功率宽带多注速调管。     

A novel resonant cavity enhanced photodetector with flat-top and steep-edge response

A novel resonant cavity enhanced (RCE) photodetector with flat-top and steep-edge response is presented. The response is obtained by designing a gradient-thickness P area in the absorption cavity. Simulation results show that the maximum and minimum values of the quantum efficiency in bandpass are 85.242% and 87.564% respectively, the ripple is about 3.6%, and 0.5 dB, 3 dB and 20 dB bandwidths are 0.3 nm, 0.4 nm and 1.2 nm, respectively. The mesa area is 10 μm × 10 μm and the frequency response bandwidth is 87 GHz. Compared with similar photodetectors, this photodetector has high quantum efficiency, narrow spectral response linewidth, good flat-top and steep-edge response and ideal high-speed characteristics.     

Ultra-wideband monolithic photoreceivers using HBT-compatible HPTswith novel base circuits, and simultaneously integrated with an HBTamplifier

This paper presents two kinds of monolithically integrated ultra-wideband photoreceivers that use HBT-compatible HPTs with novel base circuits. The HPT photoreceiver, which consists of an HPT with an inductor and series resistor base circuit, yields ultra-broadband operation with 3 dB bandwidth from 0.43-12.1 GHz and over 11 dB gain compared to a photodiode with identical quantum efficiency. The HPT/HBT photoreceiver, which consists of an HPT with an inductor at the base terminal followed by an HBT amplifier circuit, yields ultra-wideband operation from 8.5-20.5 GHz (bandwidth of 12 GHz) with over 20 dB gain. The bandwidths of these photoreceivers are state-of-the art for monolithically integrated photoreceivers using HPT/HBT structures. The proposed photoreceivers, which are based on mature MMIC technologies, offer several other remarkable features such as good design accuracy and extremely small chip size     

220GHz低噪声放大器研究

基于IHP锗硅BiCMOS工艺,研究和实现了两种220 GHz低噪声放大器电路,并将其应用于220 GHz太赫兹无线高速通信收发机电路。一种是220 GHz四级单端共基极低噪声放大电路,每级电路采用了共基极（Common Base, CB）电路结构,利用传输线和金属-绝缘体-金属(Metal-Insulator-Metal, MIM)电容等无源电路元器件构成输入、输出和级间匹配网络。该低噪放电源的电压为1.8 V,功耗为25 mW,在220 GHz频点处实现了16 dB的增益,3 dB带宽达到了27 GHz。另一种是220 GHz四级共射共基差分低噪声放大电路,每级都采用共射共基的电路结构,放大器利用微带传输线和MIM电容构成每级的负载、Marchand-Balun、输入、输出和级间匹配网络等。该低噪放电源的电压为3 V,功耗为234 mW,在224 GHz频点实现了22 dB的增益,3 dB带宽超过6 GHz。这两个低噪声放大器可应用于220 GHz太赫兹无线高速通信收发机电路。     

基于介质集成悬置槽线的差分至单端功分器北大核心CSCD

设计了一种基于介质集成悬置槽线的宽带差分至单端功分器。采用槽线与微带线耦合的差分过渡结构,实现了差分电路与单端电路的互连。在较宽的工作频率范围内实现了较好的共模噪声抑制。在10.52~15.58 GHz的频率范围内,测得差分端口处的回波损耗优于10 dB。输出端口在10.1~15 GHz的频率范围内保持15 dB以上的隔离度。差分工作模式下,功分器输出的两路信号具有幅值相等、相位相反的特点。所设计的电路基于多层板结构,将槽线及其核心电路悬置于多层板内置的腔体中,具有自封装、低辐射损耗等优势。