Orthorhombic‐pseudocubic phase transition and piezoelectric properties of (Na0.5K0.5)(Nb1−xSbx)‐SrZrO3 ceramics

0.96(Na_0.5K_0.5)(Nb_1?xSb_x)‐0.04SrZrO₃ ceramics with 0.0≤x≤0.06 were well sintered at 1060°C for 6 hours without a secondary phase. Orthorhombic‐tetragonal transition temperature (T_O‐T) and Curie temperature (T_C) decreased with the addition of Sb₂O₅. The decrease in T_C was considerable compared to that in T_O‐T, and thus the tetragonal phase zone disappeared when x exceeded 0.03. Therefore, a broad peak for orthorhombic‐pseudocubic transition as opposed to that for orthorhombic‐tetragonal transition appeared at 115°C‐78.2°C for specimens with 0.04≤x≤0.06. An orthorhombic structure was observed for specimens with x≤0.03. However, the polymorphic phase boundary structure containing orthorhombic and pseudocubic structures was formed for the specimens 0.04≤x≤0.06. Furthermore, a specimen with x=0.055 exhibited a large piezoelectric strain constant of 325 pC/N, indicating that the coexistence of orthorhombic and pseudocubic structures could improve the piezoelectric properties of (Na_0.5K_0.5)NbO₃‐based lead‐free piezoelectric ceramics.     

Bismuth sodium titanate lead‐free piezoelectric coatings by thermal spray process

Bismuth sodium titanate (BNT) piezoelectric ceramic coatings with dense morphology and single perovskite phase were fabricated by thermal spray process. The melting and crystallization behaviors of BNT near congruent composition and the effect of excess Bi composition were investigated by analyzing the heating‐melting‐cooling cycle for the application in thermal spray process. Crystal structure and morphology of the thermal sprayed BNT coatings were examined, and their electrical and electromechanical properties were tested. An effective piezoelectric coefficient d₃₃ of 50 pm/V was obtained under substrate clamping, measured with laser scanning method. The findings have shed light on the design of appropriate compositions for achieving high quality lead‐free piezoelectric ceramic coatings by the scalable thermal spray process.     

Band Gap Modification of Diamond Photonic Crystals by Changing the Volume Fraction of the Dielectric Lattice

Photonic crystals with a diamond structure of epoxy lattices in which TiO₂-based ceramic particles are dispersed were fabricated by stereolithography. The periodicity of the lattice was designed to reflect electromagnetic waves in the gigahertz range. The volume fraction (β) of the dielectric lattice medium was modified from 14% to 33% by changing the rod diameter of the lattice. The photonic band gap was observed along Γ-L 〈111〉, Γ-X 〈100〉, and Γ-K 〈110〉 directions and the complete photonic band gap was formed at over β= 20%. The width of the forbidden gap increased gradually when the β increased over 14%, and reached 2.4 GHz at β= 33%. These results agreed with the band calculation using the plane wave expansion method.     

Thickness‐dependent domain wall reorientation in 70/30 lead magnesium niobate‐ lead titanate thin films

Continued reduction in length scales associated with many ferroelectric film‐based technologies is contingent on retaining the functional properties as the film thickness is reduced. Epitaxial and polycrystalline lead magnesium niobate‐lead titanate (70PMN‐30PT) thin films were studied over the thickness range of 100‐350 nm for the relative contributions to property thickness dependence from interfacial and grain‐boundary low permittivity layers. Epitaxial PMN‐PT films were grown on SrRuO₃/(001)SrTiO₃, while polycrystalline films with {001}‐Lotgering factors >0.96 were grown on Pt/TiO₂/SiO₂/Si substrates via chemical solution deposition. Both film types exhibited similar relative permittivities of ~300 at high fields at all measured thicknesses with highly crystalline electrode/dielectric interfaces. These results, with the DC‐biased and temperature‐dependent dielectric characterization, suggest irreversible domain wall mobility is the major contributor to the overall dielectric response and its thickness dependence. In epitaxial films, the irreversible Rayleigh coefficients reduced 85% upon decreasing thickness from 350 to 100 nm. The temperature at which a peak in the relative permittivity is observed was the only measured small signal quantity which was more thickness‐dependent in polycrystalline than epitaxial films. This is attributed to the relaxor nature present in the films, potentially stabilized by defect concentrations, and/or chemical inhomogeneity. Finally, the effective interfacial layers are found to contribute to the measured thickness dependence in the longitudinal piezoelectric coefficient.     

Compositional dependence of crystallization in Ge–Sb–Se glasses relevant to optical fiber making

For fiber‐optic mid‐infrared bio‐ and chemical‐sensing, Ge–Sb–Se glass optical fibers are more attractive than Ge–As–Se because of: (i) lowered toxicity and (ii) lower phonon energy and hence transmission to longer wavelengths, with potential to reach the spectral “fingerprint region” for molecular sensing. There is little previous work on Ge–Sb–Se fibers. Here, fibers are fabricated from two glass compositions in the Ge_xSb₁₀Se_90?x atomic (at.) % series. Both glass compositions are of similar mean‐coordination‐number, lying in the overconstrained region, yet of different chemical composition: stoichiometric Ge₂₅Sb₁₀Se₆₅ at. % and non‐stoichiometric Ge₂₀Sb₁₀Se₇₀ at. %. Thermal analysis on bulk glasses has previously shown that the former exhibited the maximum glass stability of the series. However, during fiber‐drawing of Ge₂₅Sb₁₀Se₆₅ at. %, the preform tip is found to undergo surface‐devitrification to monoclinic GeSe₂ alone, the primary phase, no matter if the preform is an annealed, as‐melted rod or annealed, extruded rod. The heating rate of the preform‐tip to the fiber‐drawing temperature is estimated to be up to ~100°C/min to ~490°C. Lower heating rates of 10°C/min using thermal analysis, in contrast, encourage crystallization of both Sb₂Se₃ and GeSe₂. The non‐stoichiometric: Ge₂₀Sb₁₀Se₇₀ at. % composition drew successfully to low optical loss fiber, no matter whether the preform was an annealed, as‐melted rod or annealed, extruded rod.     

Control of Crystal Orientation and Piezoelectric Response of Lead Zirconate Titanate Thin Films Near the Morphotropic Phase Boundary

PbZr_0.53Ti_0.47O₃ (PZT) thin films with various preferred crystallographic orientations were synthesized on various substrates using pulsed laser deposition techniques. Larger piezoelectric displacement, which involved the bending vibration of the PZT film/substrate, was observed in randomly oriented PZT thin film than that in (100)- and (111)-preferred texture films. This result was discussed by correlation with the number of effective spontaneous polarization axes in the morphotropic phase boundary of the PZT system. Moreover, polarization fatigue was found to lower the electric-field-induced displacement significantly, indicating a large contribution of ferroelectric domain motion to the piezoelectric response of PZT thin films under bipolar drive.     

Self‐limited crystallization‐mediated removal of hydroxyl in glass

The effective removal of hydroxyl groups (OH) is receiving the attention of scientists interested in developing high‐performance photonic glass. Previous approaches rely on stringent control of the various drying techniques which meet with limited success in silicate glass obtained by the sol‐gel method. Here, we present a novel in situ strategy to remove structural OH groups, based on the self‐limited nanocrystallization‐triggered local chemical reaction between OH and F^? in the glassy phase. The experimental data revealed that a more than 100‐fold increase in the emission intensity can be realized. Moreover, the mechanism was discussed and it can be attributed to the effective removal of structural OH with especially strong binding energy. The results suggest an innovative avenue for the development of photonic glasses with efficient luminescence, excellent optical transmission, and improved reliability.     

Crystal Morphology of Mesoporous Silica Thin Films Synthesized by the Spin-Coating Method Using PEO–PPO–PEO Triblock Copolymer

Mesoporous thin films on Si substrates with thicknesses of about 460–610 nm have been synthesized by the spin-coating method using a Pluronic EO₇₇PO₂₉EO₇₇ (F68), EO₁₀₄PO₃₉EO₁₀₄ (F88), and EO₁₃₃PO₅₀EO₁₃₃ (F108) triblock copolymer system. The triblock copolymers were preserved within the synthesized mesoporous thin films. Transmission electron microscopy (TEM) characterization of these films clearly demonstrates that long-range mesostructural ordering strongly depends on the molecular weight of the poly(ethylene oxide)–poly(propylene oxide)–poly(ethylene oxide) (PEO–PPO–PEO) triblock copolymer, with lower molecular weight producing higher degrees of order. Plane and cross-sectional high-resolution TEM studies coupled with X-ray diffraction (XRD) analysis also show that highly ordered F68 mesoporous silica thin film forms a cubic structure with a lattice spacing a = 6.70 nm.     

Growth of Pb((Zn1/3Nb2/3)0.91Ti0.09)O3 Single Crystals Using an Allomeric Seed Crystal and Their Electrical Properties

Single crystals of Pb((Zn_1/3Nb_2/3)_0.91Ti_0.09)O₃ (PZNT 91/9), 28 mm in diameter and 30 mm in length, have been successfully grown using a modified Bridgman technique with an allomeric seed crystal. X-ray fluorescence analysis (XRFA) measurement confirms that the effect of segregation is not serious. The segregation coefficient k for PbTiO₃ content during crystal growth is 0.99, which causes some fluctuation in the composition along the growth direction. The fluctuation of composition and the complicated domain structure cause a variation of electric properties. Dielectric measurement indicates that PZNT 91/9 crystals exhibit an almost normal ferroelectric phase transition at ∼183°C from the tetragonal phase to the cubic phase. In addition, a weak frequency-dependent ferroelectric-ferroelectric phase transition is observed at ∼85°C, which is attributed to partial conversion of the rhombohedral phase to a tetragonal phase. The dielectric thermal hysteresis behavior and the existence of polarization above the Curie temperature verify that the phase transitions at ∼85° and 183°C are first order with a slight diffuse character and first order, respectively. It is demonstrated that the effects of segregation can be decreased and the homogeneity of the obtained PZNT 91/9 single crystals can be improved by optimizing growth parameters.     

Structural,vibrational, thermal,and magnetic properties of mullite-type NdMnTiO5 ceramic

Mullite-type RMn₂O₅ (R = Y, rare-earth element) ceramics are of ongoing research attention because of their interesting crystal-chemical and magnetic properties. We report nuclear and magnetic structures of NdMnTiO₅ together with its spectroscopic, thermogravimetric, and magnetic properties. The polycrystalline sample is prepared by solid-state synthesis and characterized from neutron and X-ray powder diffraction data Rietveld refinements. NdMnTiO₅ crystallizes in the orthorhombic space group Pbam with metric parameter a  =  755.20(1) pm, b  =  869.91(1) pm, c  =  582.42(1) pm, and V  =  382.62(1) 10⁶ pm³. The Mn³⁺ and Ti⁴⁺ cations are observed to be located in the octahedral and pyramidal sites, respectively. The vibrational features in these polyhedral sites are characterized by Raman and Fourier transform infrared spectroscopes. The higher decomposition temperature of NdMnTiO₅, compared to other RMn₂O₅ phases, is explained in terms of the higher bond strength of Ti-O bonds than those of Mn-O bonds. Temperature-dependent DC magnetic susceptibility suggests a paramagnetic to antiferromagnetic phase transition at 43(1) K. Inverse susceptibility in the paramagnetic region above 120 K follows the Curie-Weiss law, resulting in a magnetic moment of 6.33(1) μ_B per formula unit. Neutron diffraction data collected at 7.5 K reveal that the magnetic moments of Nd³⁺ and Mn³⁺ in NdMnTiO₅ are incommensurately ordered with a propagation vector k  = (0, 0.238, 0.117).     

Visible Frequency Thin Film Photonic Crystals from Colloidal Systems of Nanocrystalline Titania and Polystyrene Microspheres

This work describes a simple and novel ceramic processing technique to form periodic ordered structures in ceramic materials with a uniform pore size distribution. This material shows photonic gaps at visible/near-IR wavelengths. Monodisperse colloidal polystyrene microspheres are self-organized into a crystalline structure of close-packed spheres in a suspension of nanocrystalline titania. The nanoparticle titania fills the intersphere region simultaneously during colloidal crystallization. Removal of the polystyrene microspheres by calcination at a temperature of 520°C results in a periodic porous structure with a high refractive index background material. Crystals having ordered regions, a few millimeters across with typical grain sizes of 50–70 μm, are grown as thin films on substrates including glass and silicon. Optical reflectivity measurements indicate peaks at the stop band wavelengths that scale with the pore size. Visual inspection and optical microscopy reveal uniform colored regions for crystals with periodicity comparable to visible wavelengths. Despite the presence of cracks resulting from drying and heat treatment as well as numerous grain boundaries, optical characterization clearly demonstrates a photonic band gap. Reflectance peaks due to a pseudogap can be shifted by application of high pressure. In the following sections we will describe the experimental procedure and discuss optical reflectance and transmission measurements that can reveal information about the crystals, namely, the lattice constant, the refractive index, and the filling fraction of the background material.     

Large Piezoelectricity and Ferroelectricity in Mn‐Doped (Bi0.5Na0.5)TiO3‐BaTiO3 Thin Film Prepared by Pulsed Laser Deposition

Mn‐doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (MnBNBT) thin films were prepared on SrRuO₃ (SRO)‐coated (001) SrTiO₃ (STO) single crystal substrates by pulsed laser deposition under different processing conditions. Structural characterization (i.e., XRD and TEM) confirms the epitaxial growth of STO/SRO/MnBNBT heterostructures. Through the judicious control of deposition temperature, the defect level within the films can be finely tuned. The MnBNBT thin film deposited at the optimized temperature exhibits superior ferroelectric and piezoelectric responses with remanent polarization P_r of 33.0 μC/cm² and piezoelectric coefficient d₃₃ of 120.0 ± 20 pm/V.     

Effects of cerium on structures and electrical properties of (Nb,Ta) modified Bi4Ti3O12 piezoelectric ceramics

Bi₄Ti₃O₁₂ high-temperature piezoelectric ceramics composed of 0.03 mol (Nb, Ta)⁵⁺ substituting B site and x mol CeO₂ (x = 0–0.05, abbreviated as BCTNT100x) substituting A site were synthesized by the conventional solid-state reaction method. The effects of Ce additive on the structures and electrical properties of resulting Bi₄Ti₃O₁₂-based ceramics were systematically investigated. In-situ temperature-dependent X-ray diffraction (XRD) confirmed that the phase structure of BCTNT100x ceramics change from orthorhombic structure to tetragonal structure as temperature increased. The ceramics at Ce content x = 0.03 illustrated optimal performances with superior piezoelectric constant (d₃₃ = 36.5 pC/N), high Curie temperature (T_C = 649 °C), and large remanent polarization (2P_r = 21.6 μC/cm²). BCTNT3 ceramics also possessed high d₃₃ of 32.5 pC/N at an annealing temperature of 600°C, with electrical resistivity preserved at 10⁶ Ω cm at 500 °C. These results demonstrate that BCTNT100x ceramics can be used as high-temperature piezoelectric devices.     

Direct writing polyvinylidene difluoride thin films by intercalation of nano-ZnO

Polyvinylidene fluoride (PVDF) is a preeminent pyrolytic and piezoelectric polymer. It has been widely studied as an ideal material for wearable flexible sensors or low-power electronic equipment. PVDF/ZnO thin films were prepared by direct writing method, which promoted the ordered arrangement of PVDF molecular chains under the action of electric field and thus improved the crystallinity of the β phase. Meanwhile, the effects of intercalation of ZnO nanoparticles on the crystallinity of PVDF thin films were explored. The results show that appropriate addition of nano-ZnO as nucleating agent can induce the crystallinity of the PVDF film obviously. While the additive amount of nanoparticles was 0.02 wt%, the relative β phase content of the PVDF film can reach 88.92%. Under the double action of adding ZnO nanoparticles and electric field assistance, the dielectric constant of the composite film increases from 6.9 (pure PVDF) to 12.4 (0.03 wt% ZnO) at a frequency of 1 kHz. The d₃₃ value of the film without polarization is up to −9.1 pC/N, the output voltage is increased to 351 mV, and the conductivity of the composite film has been improved.     

Reversible luminescence modulation of Ho‐doped K0.5Na0.5NbO3 piezoelectrics with high luminescence contrast

A significant luminescence modulation behavior based on photochromic reactions was observed in Ho³⁺‐doped (Na_0.52K_0.48)_0.92Li_0.08NbO₃ ceramics, fabricated by the conventional solid‐state reaction method. Under visible light irradiation (407 nm) for 20 second, the samples changed pale gray from initial pale green, and returned to their original color by a thermal stimulus of 230°C for 10 minutes, showing typical photochromic phenomenon. Under 453 nm excitation, the samples exhibited strong green emission at 551 nm. Interestingly, their green emission intensity can be effectively tailored by controlling photochromic reaction processes (irradiation wavelength and time), and the luminescent modulation ratio (ΔR_t) reaches up to 77%. And, the ΔR_t value has no any obvious degradation after 10 cycles by alternating visible light irradiation and thermal stimulus, showing excellent reversibility. These results make it potential applications in many fields as a kind of multifunctional material.     

Thermal stability and electric‐field‐induced strain behaviors for PIN‐PSN‐PT piezoelectric ceramics

Pb (In_1/2Nb_1/2) O₃‐Pb (Sc_1/2Nb_1/2) O₃‐PbTiO₃ (PIN‐PSN‐PT) ternary ceramics with compositions near morphotropic phase boundary (MPB) were fabricated by solid‐state‐sintering process. Dielectric and piezoelectric properties of xPIN‐yPSN‐zPT (x = 0.19, 0.23 and z = 0.365, 0.385) ceramics were investigated as a function of temperature, showing high T_r‐t and T_c on the order of 160 ~ 200°C and 280 ~ 290°C, respectively. The xPIN‐yPSN‐0.365PT (x = 0.19 and 0.23) ceramics do not depolarize at the temperature up to 200°C, showing a better thermal stability when compared to the state‐of‐the‐art relaxor‐PbTiO₃ systems. A slight variation (<9%) of k_p, k_t, and k₃₃ was observed in the temperature range of 25°C‐160°C for xPIN‐yPSN‐0.385PT (x = 0.19 and 0.23) ceramics. Rayleigh analysis was employed to quantify the contribution of domain wall motion to piezoelectric response, where the domain wall contribution was found to increase with composition approaching MPB for PIN‐PSN‐PT system.