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1.
为了提高运算放大器对电源电压的利用率,基于GSMC 0.18 μm CMOS工艺模型,设计了一种高增益恒跨导轨对轨CMOS运算放大器。该运算放大器的输入级采用了互补差分对,并通过3倍电流镜法保证输入级总跨导在整个共模输入范围内恒定;为了获得较大的增益和输出摆幅,中间级采用了折叠式共源共栅结构;输出级采用了AB类输出控制电路,使输出摆幅基本实现了轨对轨。在3.3 V供电电压以及1.6 V输入电压下,该放大器的直流增益为126 dB,单位增益带宽为50 MHz,相位裕度为65°。电路结构简单,易于调试,可大大缩减设计周期和成本。 相似文献
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基于TSMC 0.18 μm CMOS工艺,设计了一种新颖的恒跨导高增益轨到轨运算放大器。输入级仅由NMOS管差分对构成,采用电平移位及两路复用选择器控制技术,在轨到轨共模输入范围内实现了输入级恒跨导。中间级采用折叠式共源共栅放大器结构,运算放大器能获得高增益。输出级采用前馈型AB类推挽放大器,实现轨到轨全摆幅输出。利用密勒补偿技术进行频率补偿,运算放大器工作稳定。仿真结果表明,在1.8 V电源电压下,该运算放大器的直流开环增益为129.3 dB,单位增益带宽为7.22 MHz,相位裕度为60.1°,整个轨到轨共模输入范围内跨导的变化率为1.44%。 相似文献
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提出一种正反馈摆率增强运算跨导放大器(OTA),采用共栅输入结构,利用MOS管自身平方率的I-V特性,突破了尾电流对OTA摆率的限制。输入级采用局部正反馈结构,进一步增强了OTA的摆率,电路的增益带宽积也有所提高。基于0.5 μm CMOS工艺, 5 V单电源供电,在静态功耗为150 μW,负载电容为10 pF的情况下,正向摆率与负向摆率分别为61.1 V/μs与23.2 V/μs,低频增益为47.6 dB,单位增益带宽达到3.62 MHz。在静态电流相同的情况下,提出的摆率增强OTA与传统OTA电路相比,CBF+增大22.2倍,CBF-增大8.3倍。 相似文献
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设计了一种CMOS恒跨导轨对轨输入/输出运算放大器,输入级采用负反馈技术控制尾电流,能自调整gm并使之保持恒定;输出级采用前向偏置AB类输出结构,实现轨对轨输出的同时减小了静态功耗。整个电路在5 V电源电压下,电压增益达到136 dB(1 MΩ电阻和1 pF电容并联负载),单位增益带宽为9.7 MHz,相位裕度62.4°。 相似文献
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设计了一种新颖的恒跨导轨对轨CMOS运算放大器结构。输入级采用轨对轨的结构,在输入级采用4个虚拟差分对管来对输入差分对的电流进行限制,使运放的输入级跨导在工作范围内保持恒定。输出级采用前馈式AB类输出结构,以使输出达到全摆幅。仿真结果显示,在5 V电源电压和带有10 pF电容与10 kΩ电阻并联的负载下,该运放在共模输入范围内实现了恒跨导,在整个共模输入范围内跨导变化率仅为3%,输出摆幅也达到了轨对轨全摆幅,运放的开环增益为108.5 dB,增益带宽积为26.7 MHz,相位裕度为76.3°。 相似文献
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介绍了一种具有轨对轨输入功能的CMOS输入级电路。该电路克服了一般运算放大器只能工作在一定共模输入范围的输入级的缺陷,在各种共模输入电平下有着几乎恒定的跨导,使频率补偿更容易实现,且由于其工作原理与MOS晶体管的C—V解析关系无关,对制造工艺依赖性小,适用于深亚微米工艺。在此基础上,设计出了一种宽带的运算放大器,该运算放大器具有轨对轨输入、输出能力,可以作为常用模拟电路的基本单元模块。它没有严格的共模输入限制,跨导和整体性能稳定,适于为更大规模的数字/模拟混合信号系统提供行为级模型。 相似文献
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采用"最小电流选择技术"和前馈无截止型AB类输出结构,在Chartered 0.35μmCMOS工艺下设计了一种基于片上系统应用的低功耗、高增益恒跨导满幅运算放大器。基于Bsim3v3 Spice模型,用Hspice对整个电路进行仿真,工作电压为3V,直流开环增益125dB,相位裕量74.8°,单位增益带宽33.8MHz,静态功耗0.6mV,压摆率6V/μs,输入级跨导在共模输入电压范围内只有2.34%的变化,运放版图有效面积0.026mm2,与国内外文献介绍的满幅恒跨导电路相比,文中设计的运放有较好的性能。 相似文献
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设计了一个1.5 V低功耗轨至轨CMOS运算放大器。电路设计中为了使输入共模电压范围达到轨至轨性能,采用了NMOS管和PMOS管并联的互补差动对输入结构,并采用成比例的电流镜技术实现了输入级跨导的恒定。在中间增益级设计中,采用了适合在低压工作的低压宽摆幅共源共栅结构;在输出级设计时,为了提高效率,采用了简单的推挽共源级放大器作为输出级,使得输出电压摆幅基本上达到了轨至轨。当接100 pF电容负载和1 kΩ电阻负载时,运放的静态功耗只有290μW,直流开环增益约为76 dB,相位裕度约为69°,单位增益带宽约为1 MHz。 相似文献
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To drive the backplane of a liquid crystal display device and achieve different kinds of grey levels, a high-slew-rate operational amplifier with constant-gin input stage is presented. A Zener-diode structure is inserted between the tails of the complementary input pairs to keep the grn of the input stage constant. A novel slew rate enhancement circuit is implemented to achieve a very high slew rate. The chip has been implemented in a 0.5μm CMOS process and the chip area of the operational amplifier circuit is 0.11 mm^2. The testing results indicate that in the 5-8 V input range, the maximum gm fluctuation is only 4.2%. The result exhibits a high slew rate of 111 V/μs and 102 V/μs for the rising and falling edges under a 20 pF capacitance load, and the low frequency gain is up to 109 dB with a phase margin of 70 ℃. 相似文献
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《半导体学报》2009,30(12):64-68
To drive the backplane of a liquid crystal display device and achieve different kinds of grey levels, a high-slew-rate operational amplifier with constant-gin input stage is presented. A Zener-diode structure is inserted between the tails of the complementary input pairs to keep the gm of the input stage constant. A novel slew rate enhancement circuit is implemented to achieve a very high slew rate. The chip has been implemented in a 0.5μm CMOS process and the chip area of the operational amplifier circuit is 0.11 mm~2. The testing results indicate that in the 5-8 V input range, the maximum gm fluctuation is only 4.2%. The result exhibits a high slew rate of 111 V/μsand 102 V/μs for the rising and falling edges under a 20 pF capacitance load, and the low frequency gain is up to109 dB with a phase margin of 70 ℃. 相似文献
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This study presents a high-gain, high-bandwidth, constant-gm , rail-to-rail operational amplifier (op-amp). The constant transconductance is improved with a source-to-bulk bias control of an input pair. A source degeneration scheme is also adapted to the output stage for receiving wide input range without degradation of the gain. Additionally, several compensation schemes are employed to enhance the stability. A test chip is fabricated in a 0.18?µm complementary metal-oxide semiconductor process. The active area of the op-amp is 181?×?173?µm2 and it consumes a power of 2.41?mW at a supply voltage of 1.8?V. The op-amp achieves a dc gain of 94.3?dB and a bandwidth of 45?MHz when the output capacitive load is connected to an effective load of 42.5?pF. A class-AB output stage combining a slew rate (SR) boost circuit provides a sinking current of 6?mA and an SR of 17?V/µs. 相似文献
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设计了一种工作电压为3V恒跨导满幅CMOS运算放大器,针对轨对轨输入级中存在的跨导不恒定和简单AB类输出级性能偏差这2个问题,提出了利用最小电流选择电路来稳定输入级的总跨导;浮动电流源控制的无截止前馈AB类输出级实现了运放的满幅输出,同时减小了交越失真。该电路通过HSpice进行仿真验证,在0~3V输入共模范围内,输入级跨导的变化小于3.3%,开环增益为93dB,单位增益带宽为8MHz,相位裕量为66°。 相似文献
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A new class AB CMOS operational amplifier featuring rail-to-rail output swing is presented. The proposed circuit operates with an output voltage supply of 1 V only, while the overall power consumption is lower than 75 μW. The output stage shows a quiescent current of 15 μA, while it guarantees a peak current of 220 μA. The slew rate is 1.5 V μs−1 (C1 = 150 pF) and the THD is −63 dB, when a 0.98 Vpp−10.4 kHz sinewave is applied, as measured on an experimental prototype realised with a standard 0.8 μm CMOS process. The circuit presented is suitable for use in portable hand-set systems or in medical aids. 相似文献
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In this work, a very compact, rail-to-rail, high-speed buffer amplifier for liquid crystal display (LCD) applications is proposed. Compared to other buffer amplifiers, the proposed circuit has a very simple architecture, occupies a small number of transistors and also has a large driving capacity with very low quiescent current. It is composed of two complementary differential input stages to provide rail-to-rail driving capacity. The push–pull transistors are directly connected to the differential input stage, and the output is taken from an inverter. The proposed buffer circuit is laid out using Mentor Graphics IC Station layout editor using AMS 0.35 μm process parameters. It is shown by post-layout simulations that the proposed buffer can drive a 1 nF capacitive load within a small settling time under a full voltage swing, while drawing only 1.6 μA quiescent current from a 3.3 V power supply. 相似文献
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设计了一种适合在低电源电压下工作的前馈型输入级放大结构,在全摆幅的动态工作范围内,输入级跨导保持不变,采用负载电流补偿以保证增益近似恒定,输出采用前馈型AB类输结构,实现全摆幅输出。 相似文献
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本文提出了一种低压工作的轨到轨输入/输出缓冲级放大器。利用电阻产生的输入共模电平移动,该放大器可以在低于传统轨到轨输入级所限制的最小电压下工作,并在整个输入共模电压范围内获得恒定的输入跨导;它的输出级由电流镜驱动,实现了轨到轨电压输出,具有较强的负载驱动能力。该放大器在CSMCO.6-μmCMOS数模混合工艺下进行了HSPICE仿真和流片测试,结果表明:当供电电压为5V,偏置电流为60uA,负载电容为10pF时,开环增益为87.7dB,功耗为579uw,单位增益带宽为3.3MHz;当该放大器作为缓冲级时,输入3VPP10kHz正弦信号,总谐波失真THD为53.2dB。 相似文献
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采用动态鉴频鉴相器、基于常数跨导轨到轨运算放大器的电荷泵、差分型环形压控振荡器,设计了一种低抖动的电荷泵锁相环。基于SMIC 0.18-μm CMOS工艺,利用Cadence软件完成了电路的设计与仿真。结果表明,动态的鉴频鉴相器,有效消除了死区。新型的电荷泵结构,在输出电压为0.5 V~1.5 V时将电流失配减小到了2%以下。压控振荡器在频率为1 MHz时输出的相位噪声为-94.87 dB在1 MHz,调谐范围为0.8 GHz~1.8 GHz。锁相环锁定后输出电压波动为2.45 mV,输出时钟的峰峰值抖动为12.5 ps。 相似文献