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CAD技术在微电子工艺设计及器件特性分析中的应用 总被引:1,自引:0,他引:1
集成电路工艺及器件特性计算机辅助设计系统是微电子CAD系统的重要组成部分。本文介绍了该系统在集成电路工艺设计及器件设计中的部分应用。 相似文献
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阮刚 《固体电子学研究与进展》1988,(4)
集成电路工艺及器件模拟是缩短集成电路工艺及器件设计周期、节省设计成本、提高设计精度的关键技术;同时,这项研究还能深化集成电路工艺及器件物理的研究,得到人们目前还不能用实验手段得到的有关信息。 相似文献
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一、集成电路 TCAD 系统的提出以缩短集成电路工艺、集成电路器件和集成电路电路的设计周期以及为提高设计精度和节省设计成本为目标而发展起来的集成电路工艺模拟、集成电路器件模拟、集成电路电路模拟用器件模型参数提取等方面的集成电路计算机辅助设计软件的研制和应用,如从美国 Scanford 大学推出一维硅器件全工序工艺模拟器 SUPREM-2(1978年)算起,已有十余年的历史了。在这十余年中.随着集成电路的飞速发展,集成电路工艺的 CAD 这个领域也有了较大的进展。在集成电路工艺模拟方面,已有了较成熟的一维硅集成电路全工序工艺模拟软件,二维硅集成电路全工序工艺模 相似文献
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2微米CMOS工艺工程技术研究 总被引:1,自引:1,他引:0
本文把工艺工程技术作为一个专门的技术领域,从集成电路制造工艺技术中分离出来,并对它进行了系统的分析研究。一个完整的大规模和超大规模集成电路制造工艺技术应包括两个大的方面:一个是单项工艺技术,另一个是工艺集成技术,亦即工艺工程技术。工艺工程技术包括:(1)器件设计,亦即器件的纵向横向结构参数和主要电参数的设计;(2)工艺设计规则设计;(3)器件电路的工艺流程设计 相似文献
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编者西安中芯微电子公司是一家专业从事集成电路设计及应用系统开发的高科技企业,致力于模拟集成电路、驱动集成电路、MCU、功率IC及器件、通信专用集成电路及混合信号集成电路的设计开发,并可根据客户需求提供设计服务与应用系统解决方案。 相似文献
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潘炯 《激光与光电子学进展》1983,20(11):43
微电子学现正处于材料革命的阶段,超大规模集成电路所必需的超精细分辨、高可靠性、纷繁复杂的布局及器件设计的要求,正在迫使电子材料专家转向新的材料系统和新的加工工艺。 相似文献
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介绍了TSUPREM-4集成电路工艺仿真系统的主要仿真功能及系统的深亚微米模型。以LDD结构的NMOS器件为例进行了二维工艺仿真,得到了NMOS器件的二维剖面结构、杂质浓度的等值分布描述以及相应的电学特性。 相似文献
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本文介绍一个集成电路工艺优化设计系统GOALSERVER。该系统是多目标优化数学方法与解析式工艺/器件一体化模拟的结合,它可根据对各器件特性的具体要求迅速、自动地选择工艺制造控制参数,使得各项器件特性同时达到最优。设计了一种工艺优化设计描述语言,使得系统具有良好的用户界面。新的多目标优化算法使得变量初值易于选择且易于获得满意的最优解。最后给出一个工艺优化设计的实例。 相似文献
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With the advent of the VLSI era, computer-aided design (CAD) is increasing its importance, and much effort is now being expended on CAD by many IC manufacturers and laboratories in Japan. This paper reviews the historical aspect of the CAD systems developed in this field, and describes the current status of VLSI CAD systems and technologies, from device to system levels, in Japan. The CAD development activities for IC's were initiated in the late 1960's. At present, VLSI CAD systems and related CAD technologies in Japan seem to be in the adolescent stage-partly capable of practical use and partly still in the immature state. 相似文献
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《Solid-State Circuits, IEEE Journal of》1985,20(2):495-500
Computer-aided design (CAD) has been used extensively in the development of VLSI MOS technology at Hewlett-Packard Laboratory. The CAD system for MOS device design is described. The development of the p-channel transistor with submicrometer channel length, trench isolation in CMOS, and side-wall-masked isolation (SWAMI) for VLSI technology are then presented, followed by a discussion of the techniques used in the simulation of parasitic capacitances in multilayer interconnects for circuit performance evaluations. 相似文献
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A computer-aided design (CAD) system called ALGA for an analog circuit layout is presented. The main contribution of this paper is to construct a weight graph that represents the topological connectivity of a given analog circuit. By using the weight graph, some efficient techniques can be designed to avoid devices mismatch and place all devices according to the device size constraints. Moreover, an algorithm is presented to perform the device placement step and propose an effective approach to reduce noise coupling in the routing step. A design method has been implemented in several Complementary Metal Oxide Semiconductor (CMOS) analog circuits. It is seen that the proposed system can generate good analog circuit design. 相似文献
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A series model is used to determine the intrinsic reliability of an integrated circuit. An analysis of electromigration in the interconnect system of a 200 000 transistor VLSI device, shows that the failure rate exceeds 10 FIT (failures per 109 hours) within 2 years when operating at a temperature of 800 C. These results indicate the importance of fundamental wear-out mechanisms as factors in VLSI device reliability, under usual operating conditions. The analysis, as applied to a generic chip, predicts that temperature, burn-in, and complexity all adversely affect the device reliability. The paper demonstrates the feasibility of using the information available in the design database together with specific failure models to predict (during the design phase) the reliability of an IC. These techniques can be used to develop a CAD tool for reliability prediction. 相似文献
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以往以机械CAD为基础的自主学习系统中较少考虑人性化设计因素。在此,提出一种基于工业设计原理进行机械CAD基础学习系统设计的新思路,从人机界面、色彩设计、文字设计及人机交互等方面进行了详细设计,更多地考虑到学习系统的人性化设计因素。从工业设计原理出发,制作了新的自主学习系统,使学生更乐于接受,系统更易于学习,取得了良好的效果。该新思路同样适用于其他课程学习系统的设计。 相似文献
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Das K. K. Walker S. G. Bhushan M. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2007,95(3):670-687
An integrated computer-aided design (CAD) framework for evaluating MOSFET and layout parasitic extraction (LPE) models and circuit simulators used in the timing and power analysis of CMOS products is presented. This unified CAD methodology builds a step-wise understanding of the underlying parameter values in the models and their impact on circuit performance. A number of circuit experiments are included to extract the contributions of key MOSFET parameters and physical layout sensitive parasitic elements from circuit simulation results. This CAD setup thus allows easy and detailed comparison of different technologies, device models, and LPE tools to prevent possible bugs in the software as well as inaccuracies in device and parasitic models and timing tools. The software code to carry out the circuit simulations, analysis, and display of the results in an automated fashion has been specifically developed to support this framework. Some of the experiments designed for this work are also placed on the product chip for model-to-hardware correlation. The comparison of the hardware data to the model predictions points to the sources of any discrepancies and aids in tuning the product design to reflect changes in the technology as part of an overall design for manufacturing (DFM) platform 相似文献
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PCB板组装生产线中的大多数加工设备均为数控设备。它们编程所需要的大多数特征数据均可从CAD设计系统中得到。如何在CAD设计系统和自动化加工设备之间建立起有机的联系和共享,正是CIMS所要解决的问题。因此,文章以CIMS系统中的CAD/CAM为重点,介绍了构造和设计一个电子CAD/CAM集成系统的方法和思路,以期引起更多的同行加入到该技术的研究中来。 相似文献