热释电自动化节能装置

热释电红外传感器是一种能检测人体发射的红外线而输出电信号的传感器，也称人体运动传感器。目前，广泛应用于防入侵报警器。本文介绍用该器件组成的一款自动化节能装置如下。     

基于单片机的安全报警器设计

随着时代的进步,人们对环境的安全性提出更高的要求,于是设计一个行之有效的安全警报器有很大的必要。而这里所设计的安全报警器则采用了传感元件——热释电红外传感器。这种热释电红外传感器能以非接触形式检测出人体辐射的红外线,并将其转变为电压信号。热释电红外传感器既可用于安全报警装置,也可以用于自动控制、接近开关、遥测等领域。它是结合单片机、电子基础、传感器为一体的新技术。     

热释电红外探测器的元器件(二) 热释电红外传感器

热释电红外探测器是由热释电红外传感器(指陶瓷型,下同)、菲涅耳透镜及电子电路组成的一种光电检测装置,它能不接触地检测人体运动时辐射出的红外线并转换成电信号输出。本文介绍热释电红外传感器及与其配套的菲涅耳透镜。热释电红外传感器1.热释电效应 某些强介电物质的表面接受了红外线的辐射能量,其表面产生温度变化,随着温度的上升或下降,在这些物质表面上就会产生电荷的变化,这种现象称为热释电效应,是热电效应的一种。这种现象在钛酸钡之类的强介电质材料上表现得特别显著。若在钛酸钡一类的晶体的上下表面镀膜形成电极,在上表面加以…     

多功能红外防盗报警器

众所周知,用被动式热释红外传感器可以制作各种各样的防盗报警器和自动控制开关.这里,向大家推荐一种与众不同的热释红外线防盗报警器.它用廉价的4运放Lm324做探头,完成对热释红外线信号的放大、比较和输出,用51系列单片机AT89C2051做报警器的主控部分,两者之间只用一根双线相连接.这条线路既要给红外传感器供电,又传送探头向主机发回的各种报警信号.     

直流型热释电红外控制器WT8075

直流型热释电红外控制器ＷＴ８０７５黄勇人体是一个特定波长红外线的发射体．检测到这种红外线的变化并予以放大处理，以推动适当的负载，是热释电人体红外传感器（ＰＩＲ）及专用控制ＩＣ的功能。这种人体检测技术比以往的超声微波方式更为灵敏和准确，在国外已广泛用于...     

被动式红外线控制器

本文介绍一种被动式红外线控制器(简称红外控制器)。被动式控制不同于主动式的控制。典型的主动式控制如生产流水线上的红外光电开关,它需要有一个近红外发射源和一个红外光电接收控制器,当控制器遮挡一次红外光线,便输出一个信号。被动式控制不需配备红外发射源,而是采用中红外技术,利用热释电传感元件来接收特定的物体(如人体)辐射的红外线作为控制信号,对设备进行自动控制。本文介绍的红外控制器可应用于红外防盗报警器、灯光的自动照明,以及自动门启闭等的自动控制。本控制器的主要技术参数如下: (1)在常温下,当传感器的安装高度为2m时,对速率为0.3～3m/s的人体的有效传感距离为12m (2)传感的视角水平84°,垂直52° (3)能响应的红外波长为8～14μm (4)环境相对湿度≤85％ (5)使用环境-10～+40℃     

单片红外传感控制集成电路SM9576

单片红外传感控制集成电路ＳＭ９５７６宋战校ＳＭ９５７６是一个红外线传感控制器，内部包含红外线发射驱动和红外线接收、检测电路，当发射出去的红外线信号被物体反射回来，由接收管接收、放大、检测，再由输出电路去控制执行机构。它可以广泛应用于高级宾馆和现代居室...     

LHI878热释电红外传感器的体温检测系统设计

设计一种以ATmage32单片机为核心的热释电红外体温测量系统。利用热释电红外传感器,设计一个非接触式的语音播报体温测量系统。采用热释电红外传感器来提取人体温度信号,同时由DS18B20测量环境温度信号,进行温度补偿减少测量误差。将提取的温度信号经过模拟处理后由AVR单片机控制实现对人体温度值的转换及处理,将得到的温度值送入LCD显示及语音播报。同时还加入了时钟功能和超温报警功能,使设计更具实用性。该体温测量系统测量范围为35~42 ℃,测量时间小于1 s。该温度检测系统具有使用方便、灵活性好、可靠性高等优点,具有一定的推广应用价值。     

自动开关的电风扇

日本东芝公司推出一种能够自动开关的新型电风扇。这种风扇的底座装有红外传感器 ,当人走近它时 ,传感器感知到人体的红外线 ,即能启动开关 ,使风扇运转 ;当人离开电扇 ,经过 4 5s的时间 ,传感器就自动使风扇停转。这种电风扇给使用者带来了极大方便 ,同时也能节省电能。自动开关的电风扇     

基于热释电红外传感器的动作检测系统设计

人体动作检测广泛应用于人机交互、智能安防、军事情报等领域,该文利用热释电红外传感器对人体红外辐射灵敏的感应,通过设计信号调理及采集电路,搭建实验平台对传感器输出信号进行采集分析,在时域和频域中进行运动特征的提取算法设计,实现人体运动形态的检测。该文以踏步过程中跳跃动作的提取为例,介绍了整个设计过程。该人体检测方法具有成本低,抗干扰能力强等优势,对人体检测领域研究有重要的参考价值。     

An object-oriented SECS programming environment

An object-oriented programming (OOP) environment for developing SEMI Equipment Communication Standard (SECS) applications with the C++ and C programming languages in a Unix workstation environment is described. The system defines a set of programming objects corresponding to the standard SECS-II item types, messages and headers as well as a number of support classes and operations. Conversion between standard program datatypes and SECS-II items is transparent or explicitly managed by the developer. Within a standard framework using standard C++ input/output methods, SECS-II messages may be created, analyzed, transmitted and received between internal buffers, external files and communication channels. Classes corresponding to specific SECS stream and function codes are also available and can be incorporated easily into application code with little or no modification     

Transport model in n++-poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memoryapplications

The origin of enhanced injection in n⁺⁺-poly/SiO_x /SiO₂/p-sub MOS capacitors under accumulation is investigated. Starting from experimental evidences as the structural homogeneity of the off-stochiometric oxide and the temperature dependence of current in n⁺⁺-poly/SiO_x/p-sub capacitors, we developed a new transport model. In this picture, transport consists on the Poole-Frenkel and multistep tunneling of the SiO_x barrier and the Fowler-Nordheim (FN) tunnel of the SiO ₂ barrier, the latter definitely limiting the current flowing through the MOS. The model explains how the presence of two barriers and an accelerating electric field in the SiO_x gives rise to the injection enhancement, respect to the case of a single conventional n ⁺⁺-poly/SiO₂ barrier. In fact, after the trap-assisted tunnel of the first barrier, the electron arrives at the SiO_x/SiO₂ interface with an excess energy furnished by the electric field. There, it sees an FN barrier lower than in the conventional case. Experiment and model calculations are in excellent agreement     

光气的太赫兹/红外吸收及拉曼散射振动光谱研究

采用Restricted Hartree-Fock(RHF)自洽场方法和密度泛函理论(DFT)方法对光气(COCl2)进行了RHF/6-31G、RHF/6-31+G、RHF/6-31++G、RHF/6-311G、RB3LYP/6-31G、RB3LYP/6-311G、RB3LYP/6-31+G、RB3LYP/6-31++...     

氯溴双卤代烷烃分子构型和光谱对烷基链长依赖关系的研究

氯溴双卤代烷烃在太阳紫外光辐射下解离生成游离态的氯和溴自由基,它们是破坏臭氧的主要元凶之一。利用B3LYP/6-311++G(d,p)方法对氯溴双卤代烷烃分子CnH2nBrCl(n=1~16)进行分子构型优化以及红外光谱的计算。根据数据进行分析比较,得到了氯溴双卤代烷烃C-Br键和C-Cl键的键长、键角等构型参数随烷基支链长度增加(n为1~16)的变化趋势图。研究讨论了氯溴双卤代烷烃的红外光谱相关振动随烷基支链长度增加的重要变化规律。     

A high-yielding evaporation-based process for organic transistors based on the semiconductor DNTT

We report on the performance of organic thin film transistors manufactured in an all-evaporated vacuum roll-to-roll process. We show that dinaphtho [2,3-b:2′,3′-f] thieno[3,2-b]thiophene (DNTT) is a suitable semiconductor material for deposition onto a flash evaporated polymer insulator layer to make bottom-gate top-contact transistors. Significantly, in batches of 90 transistors, the process approached a 100% yield of high mobility transistors with high on/off ratios and low gate-leakage. By contrast, a solution-deposited insulator layer led to significant gate leakage in a high proportion of transistors leading to poor yield. The performance of DNTT devices is shown to be superior to that of previously reported pentacene devices. Transistor performance is further enhanced by inclusion of a low-polarity surface modification, such as polystyrene, to the acrylate. The devices show good environmental stability but we demonstrate also that they can be in-line encapsulated with an acrylate and a SiOx overlayer without damaging the underlying transistor. Finally, a first demonstration is made of organic vapour jet printing of the DNTT to manufacture transistors with a high semiconductor deposition rate.     

High-frequency oscillations of p++-n+-n-n++avalanche diodes below the transit-time cutoff

According to Read, n⁺⁺-P⁺-i-P⁺⁺diodes should oscillate at special high frequencies determined by carrier transit time in the space-charge layer. Oscillations not affected by transit time were observed with p⁺⁺-n⁺- n-n⁺⁺silicon diodes. The corresponding current-voltage characteristic revealed a negative resistance setting in at a critical current. Theoretical considerations show that one-sided avalanche injection in n⁺⁺-p⁺-p⁺⁺structures may lead to a slight negative resistance for carrier concentrations smaller than the impurity concentration and for certain widths of the depletion layer. This type of negative resistance disappears in n⁺⁺-p⁺-i-P⁺⁺structures, but with increasing injection multiplication is induced in the intrinsic layer. Therefore the carrier space-charge is reduced and a negative resistance appears at a critical current density. The onset of this second injection is an upper current limit of the Read transit-time mode. The frequency range of oscillations due to avalanche space-charge feedback generally will not be separated from the range of transit-time oscillations. Thus, it must be judged carefully which mechanism is responsible for observed high-frequency oscillations. On the other hand, space-charge feedback may give additional stability to the transit-time mode.     

脐带血与先天性心脏病患儿红细胞的光谱分析

为了探讨脐带血红细胞和先天性心脏病患儿红细胞的内容物的改变情况及其变化机理,为先天性心脏病的产前诊断提供有用信息,采用激光光镊喇曼光谱系统,测定了脐带血红细胞与先天性心脏病患儿红细胞的喇曼光谱,通过对两者喇曼光谱进行比较分析,发现脐带血红细胞与先天性心脏病患儿红细胞的光镊喇曼光谱有较大的差异。与脐带血红细胞相比,先天性心脏病患儿红细胞的整体谱线偏弱,部分的特征谱线发生位移。该研究结果将为提高胎儿先天性心脏病的检出率提供一种新的、快速简便的光谱分析手段,为临床诊断提供有力的实验依据。     

A silicon homojunction infrared detector having an active metalfilm on an n++ layer

A silicon n⁺⁺pn homojunction infrared detector, in which a degenerate n⁺⁺ layer is backed by a metal film forming an ohmic contact, has been proposed and studied. The metal film is a photoelectric conversion region along with the n⁺⁺ layer. Although, for an n⁺⁺pn detector without the metal film, very poor rectifying properties are observed when the n⁺⁺ layer thickness is extremely reduced, the new detector, employing a thin PtSi film as the metal film, shows normal diode I-V characteristics, since the PtSi film provides increased surface conductivity. The new detector has achieved an increase in operatable temperature, or an extension of cutoff wavelength, and operated with cutoff wavelengths of 11.9 μm, 18.7 μm and about 30 μm at 70 K, 50 K, and 30 K, respectively, because the saturation current density for the new detector has been reduced to about one tenth that for the previously reported n⁺⁺pn detector. The responsivity for the new detector has increased to 1.1-3.8 times as large as that for the previously reported n⁺⁺pn detector, when both detectors have the same cutoff wavelength     

Low-temperature excess loss of UV-curable acrylate/nylon-coated optical fibres

Ultraviolet (UV) radiation curable acrylate/nylon-coated optical fibres show much higher excess loss at low temperatures than silicone/nylon-coated fibres. The difference in low-temperature excess loss between UV-curable acrylate/nylon- and silicone/nylon-coated fibres has been related to the degree of slip between the primary and nylon secondary coating layers during nylon extrusion coating process. The application of a lubricant to the acrylate and nylon interface has been found to be effective in reducing the excess loss at low temperatures.     

$hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Abstract-We report Al₂O₃Zln_0.53Ga_0.47As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n⁺ regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In_0.53Ga_0.47As channel with an In_0.4sAl_0.52As back confinement layer and the n⁺⁺ source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed I_D = 0.95 mA/mum current density at V_GS = 4.0 V and g_m = 0.45 mS/mum peak transconductance at V_DS = 2.0 V.