Intensity Noise in a Wavelength-Locked Fabry–Perot Laser Diode to a Spectrum Sliced ASE

We derived analytic expression for the relative intensity noise (RIN) of a wavelength-locked Fabry-Perot laser diode (FP LD) in a single mode region. The RIN of the wavelength-locked output is a function of the photon density and the photon life time. It also depends on the wavelength detuning and the injected amplified spontaneous emission (ASE) power. We investigated the modulation transfer function of the wavelength-locked FP LD and its dependence on wavelength detuning. The analytic result has good agreement with the simulation result.     

1.25-Gb/s Operation of a Spectrum-Sliced Fabry–PÉrot Laser Diode With Intensity Noise Suppression by a Second Fabry–PÉrot Laser Diode

We propose a low-cost solution for the intensity noise suppression in the spectrum-sliced Fabry-Perot laser diode (F-P LD), which is achieved by placing an F-P LD at the receiver region. The F-P LD at the receiver region provides the intensity noise suppression of about 10 dB as well as the increase of the received optical power for the spectrum-sliced optical signal. The Q-factor is improved about 5.9 at a data rate of 1.25 Gb/s. As a result, we successfully demonstrate 10-km error-free transmission at 1.25-Gb/s signal with a transmission penalty of less than 0.5 dB. It is also found that the low spectrum-sliced power of -22 dBm achieves the relative intensity noise level of -112.5 dB/Hz, which is almost independent of the operation current.     

1.25-Gb/s Operation at 50-GHz Channel Spacing Based on Intensity Noise Suppression of Wavelength-Locked Fabry–PÉrot Laser Diode

We demonstrate 1.25-Gb/s operation at 50-GHz channel spacing and 10-km single-mode fiber, which is based on a wavelength-locked Fabry-Perot laser diode (F-P LD) and an intensity noise suppression by a gain saturation of F-P LD in front of the receiver. The wavelength-locked F-P LD employs the spectrum-sliced incoherent light with narrow bandwidth of 35 GHz. The intensity noise of wavelength-locked F-P LD is suppressed about 6 dB by the F-P LD in the front of the receiver. As a result, the bit-error-rate curves exhibit the error-free performances over the detuning conditions to cover a whole mode spacing period of F-P LD.     

Modified Fabry–Perot and Rate Equation Methods for the Nonlinear Dynamics of an Optically Injected Semiconductor Laser

Modifications have been introduced to the Fabry– Perot (FP) and the rate equation methods to improve the accuracy of the analysis of the nonlinear dynamics of a laser with external optical injection. Comparison between the modified methods and the more accurate transmission-line laser model (TLLM) shows good agreement, while the computational time of the latter is larger by two or three orders of magnitude. In the FP method, the stimulated recombination term in the carrier density evolution equation is modified to include the backward propagating wave and the exponential longitudinal dependence of the electromagnetic field. In the rate equation method, the optical injection term is modified to account for the contribution of the amplification and losses of the injected light inside the cavity to the average photon density. The derivation explaining the validity of these changes and the mathematical relationship between the two methods is presented. Improved stability maps for different values of the injected optical power and frequency detuning are demonstrated and compared with those obtained by the TLLM. The gain compression effect is included in the FP model, and its effect on the stability properties is discussed.      

In-Line Fabry–Perot Etalons Based on Hollow-CorePhotonic Bandgap Fibers for High-Temperature Applications

In this paper, we report a novel in-line fiber Fabry–Perot (F-P) etalon, consisting of a section of hollow-core photonic bandgap fiber (HC-PBGF) spliced between two single mode fibers. The fabrication process of such a sensor is simple and straightforward, including only cleaving and splicing. The sensing characteristics of the F-P etalon based on HC-PBGF, including high temperature, strain, bend, and transverse load, are fully investigated by experiments, for the first time to our knowledge. It is found that such a F-P etalon can be used under high temperatures of up to 600 $ ,,^{circ}{hbox {C}}$, and has a low cavity-length-to-temperature sensitivity of $sim {1.4}~{hbox {nm}}/^{circ}{hbox {C}}$, while it has a relatively high strain sensitivity of $sim {5.9}~{hbox {nm}}/mu varepsilon$. Moreover, this F-P etalon is insensitive to bend or transverse load. Furthermore, the long cavity length ($> {1}~{hbox {cm}}$) of the sensor makes it suitable for multiplexing. These characteristics would make this HC-PBGF-based F-P etalon to be an excellent strain sensor or gas sensor for use in high-temperature environments.      

General Method for Calculating the Response and Noise Spectra of Active Fabry–Perot Semiconductor Waveguides With External Optical Injection

We present a theoretical method for calculating small-signal modulation responses and noise spectra of active Fabry–Perot semiconductor waveguides with external light injection. Small-signal responses due to either a modulation of the pump current or due to an optical amplitude or phase modulation of the input field can be calculated. Both responses and noise spectra are given through semianalytical expressions taking into account the longitudinal extent and finite end-facet reflectivities of the active device. Different examples of responses and spectra are presented for semiconductor optical amplifiers and an injection-locked laser. We also demonstrate the applicability of the method to analyze slow and fast light effects in semiconductor waveguides. Finite reflectivities of the facets are found to influence the phase changes of the injected microwave-modulated light.      

Measurement of Facet Reflectivity Through Reflection Gain in Fabry–PÉrot Laser Diode

We propose a simple and useful method to measure the facet reflectivity in a Fabry-Perot laser diode (LD). The new measurement method does not require information on LD parameters such as threshold current or optical spectrum. The measurement is based on a simple formula that describes the relationship of facet reflectivity and reflection gain with launching the probe beam of a narrow spectral width.     

Center embossed diaphragm design guidelines and Fabry–Perot diaphragm fiber optic sensor

This research established the design guidelines for center embossed diaphragms for micro-diaphragm fiber type sensors. Following the guidelines, a center embossed diaphragm fiber optic sensor (CE-DFOS) based on Fabry–Perot interference was designed and fabricated with micro-electro-mechanical system (MEMS) technology. The CE-DFOS was experimentally verified to have the designed intrinsic frequency, and demonstrated high sensitivity in parallel testing with a piezoelectric (PZT) sensor.     

Effects of In-Band Crosstalk in Wavelength-Locked Fabry–PÉrot Laser-Diode-Based WDM PONs

We investigated the impact of in-band crosstalk on the system's performance in wavelength-locked Fabry-Perot laser-diode (FP-LD)-based wavelength-division-multiplexed passive optical networks (WDM PONs). As expected, wavelength-locked FP-LD, which was injected by using an incoherent broadband light source, was more tolerant to in-band crosstalk than distributed-feedback (DFB) laser diode. A 1-dB power penalty in the wavelength-locked FP-LD-based PON system was observed when the crosstalk-to-signal ratio was ~-9 dB. We also compared the measured power penalties with the calculated power penalties. It has been shown that the in-band crosstalk-induced power penalty in wavelength-locked FP-LD-based WDM PON could be estimated properly by taking into account both effects of power addition and signal-crosstalk beat noise.     

Simultaneous Measurements of Dispersion Parameter and Fiber Length Using the Self-Seeding Laser Oscillation of a Fabry–PÉrot Laser Diode

A simultaneous measurement technique of the dispersion parameter and the length of an optical fiber has been demonstrated by using the self-seeding laser oscillation of a Fabry-Perot laser diode. We measured the dispersion parameter and the length of an optical fiber from the modulation frequency changes required to induce single-mode laser oscillations through an optical closed-loop path. The dispersion and fiber length measurements were within 1.5% and 0.2%, respectively, of the values measured by commercial instruments.     

Detailed Comparison of Injection-Seeded and Self-Seeded Performance of a 1060-nm Gain-Switched Fabry–PÉrot Laser Diode

We investigate and compare the performance of a gain-switched picosecond Fabry-Perot laser diode operated at 1.06 mum under both injection- and self-seeded conditions. Our experiments show that comparable performance can be obtained for both modes of operation, with the self-seeding arrangement offering overall benefits in terms of reduced system complexity and cost, providing the associated quantization of available pulse repetition rate can be tolerated.     

Enhanced Modulation Bandwidth of a Fabry–PÉrot Semiconductor Laser Subject to Light Injection From Another Fabry–PÉrot Laser

Variations in optical spectrum and modulation bandwidth of a modulated Fabry-Perot (FP) semiconductor laser subject to the external light injection from another FP Laser is investigated in this paper. Optimal wavelength matching conditions for two FP lasers are discussed. A series of experiments show that two FP lasers should have a central wavelength overlapping and a mode spacing difference of several gigahertz. Under these conditions both the magnitude and phase frequency responses can be improved significantly.     

Multiwavelength erbium-doped fiber ring laser employing Fabry–Perot etalon inside cavity operating in room temperature

In this investigation, we propose and demonstrate a simple and cost-effective erbium-doped fiber (EDF) ring laser using a Fabry–Perot etalon inside a linear cavity and employing the accurate fiber cavity length to satisfy the least common multiple number for generating multiwavelength in C-band at room temperature. Furthermore, the center wavelength of the lasing wavelength bands can be adjusted to 1541.02, 1551.32, and 1562.03 nm, respectively. The wavelength separation in each wavelength band is 0.34 nm. Moreover, the output stability of the multiwavelength laser has also been discussed and analyzed.     

Tunable Dual-Wavelength Fiber Laser Using Optical-Injection Fabry–PÉrot Laser

In this investigation, we propose and experimentally demonstrate a dual-wavelength fiber laser based on a self-injected Fabry–PÉrot laser diode and an erbium-doped fiber. The dual-wavelength tuning range is 39.49 nm, from 1526.27 to 1565.76 nm, and the mode spacing of the dual-wavelength can be tuned from 1.32 to 39.49 nm. In addition, the output power difference of the dual-wavelength can be controlled and smaller than 1 dB.      

Polarization Characteristics of an External Cavity Diode Laser With Littman–Metcalf Configuration

Polarization characteristics of an external cavity diode laser (ECDL) in Littman configuration with a diffraction grating are presented in this letter. Using a conventional analyzer, it is found that both linear polarized and elliptical polarized (EP) emission can be obtained from the ECDL. It is also an EP state in the laser cavity when the output is in EP state. Experimental results indicate that the grating we used is a polarization-conversion element for both of the zeroth- and first-order diffractions. Brief explanations and basic equations are given in this letter.      

Temperature-Dependent Saturation Characteristics of Injection Seeded Fabry–PÉrot Laser Diodes/Reflective Optical Amplifiers

In this paper, the temperature dependence of the gain and saturation power of injection seeded Fabry–Perot laser diodes/reflective semiconductor optical amplifiers are analyzed theoretically and experimentally. For a constant gain, the saturation power increases with the ambient temperature. This dependency explains the observed variation in relative intensity noise versus injection power, as a function of temperature.      

A WDM-PON Employing Fabry–PÉrot Laser Diodes Without a Seed Light Injection

We propose and demonstrate a wavelength-division-multiplexed passive optical network by employing double-contact Fabry-Perot laser diodes (F-P LDs) without a seed light injection. To avoid the high mode partition noise at low frequency, we use a binary phase-shift keying as a modulation format at a low relative intensity noise window. An error-free transmission is achieved by compensating a lasing envelope shift due to temperature variation with the double-contact F-P LD.     

Multiple Dual-Wavelengths Erbium-Doped Fiber Ring Laser Using a Polarization-Maintaining Fabry–PÉrot Filter

A multiple dual-wavelengths erbium-doped fiber laser is demonstrated. It is designed by using a narrowband polarization-maintaining Fabry–PÉrot filter in a ring cavity. More than 30 power equalized dual-wavelengths are achieved in a 10-nm range. The switchability from multiple dual-wavelengths to normal multiple wavelengths laser is also demonstrated experimentally.      

High-Power Single-Longitudinal-Mode Fiber Laser With a Ring Fabry–PÉrot Resonator and a Saturable Absorber

We demonstrated a high-power single-longitudinal-mode (SLM) all-fiber laser. In the cavity, a fiber Bragg grating is used to select the appropriate wavelength at 1565 nm, and a fiber ring is incorporated to act as a Fabry-Perot resonator, which greatly reduces the longitudinal-mode density. Meanwhile, an unpumped erbium-doped fiber serves as a saturable absorber to ensure the SLM operation. Finally, a high-power SLM fiber laser producing as high as 867-mW output power has been experimentally demonstrated.     

Thermal Characteristics of a Laser Diode Integrated on a Silica‐Terraced PLC Platform

A spot‐size converted Fabry‐Perot laser diode (LD) was flip‐chip bonded to a silica‐terraced planar lightwave circuit (PLC) platform to examine the effect of the silica terrace on the heat dissipation of the LD module. From the measurement of the light‐current characteristics, it was discovered that the silica terrace itself is not a strong thermal barrier, but the encapsulation of the integrated LD with an index‐matching polymer resin more or less deteriorates the heat dissipation.