A proposed model of MISS composed of two active devices

A model is proposed for MISS operation which explains the discrepancies in threshold voltage, switching current and the physical mechanism reported previously. A complete physical picture of the current-voltage characteristics of the device is given considering the coupled action of two devices; a bipolar transistor with open base and an amplifying MIS structure in non-equilibrium. An approximate value for holding voltage is given. Some experimental results supporting the suggested physical picture are reported showing the charge-storage effect anticipated by this model and a capacitive-current behaviour evidencing the existence of an internal positive feedback in the device.     

An integrated PIN/MISS OEIC for high current photoreceiverapplications

A new PIN/MISS photoreceiver with very high output current has been developed by using the combination of an amorphous silicon germanium alloy PIN photodiode and a metal-insulator-semiconductor switch (MISS) device. The developed photoreceiver uses a PIN photodiode as the light absorption structure and light wavelength selector and the MISS device as an actuator to drive an electronic load. Based on the experimental results, the photoreceiver yields a very high output current of 3.2 mA at a voltage bias of 6 V under an incident light power of P_in=100 μW, and has a rise time of 465 μs with a load resistance of R=1 kΩ. The peak response wavelength of the PIN photodiode is at 905 nm, i.e., infrared light. Thus the high output current PIN/MISS photoreceiver is a good candidate for some specific applications     

X波段低损耗高隔离开关应用的GaAs PIN二极管

报道了一种适用于X波段的低损耗高隔离度开关的GaAs PIN二极管.讨论了GaAs PIN二极管的物理特性和主要电学参数对开关性能的影响,并且介绍了工艺制备过程.测试结果表明在100MHz～12.1GHz范围内,正向电流为10mA时的开关电阻小于2.2Ω,而反向电压为-10V时开关电容小于20fF.     

Modelling of electroluminescent GaP diodes I (V) and L (V) characteristics

An investigation of the diode characteristics has been under taken in order to identify the physical mechanisms governing its behaviour at different bias levels. The influence of the various physical and technological parameters upon the electrical and optical behaviour of the component have been illustrated.A complete theoretical simulation of a GaP diode is presented and the principal results are examined. An analytical model of the devices operation, based on the physical analysis of the behaviour of the GaP diodes at all bias levels, is given. A method for determining the parameters (lifetimes) which govern the operation of the diode is described, followed by the presentation of the experimental results obtained from various GaP diodes.     

A power SIPOS MISS device

Power metal-insulator-silicon-switch (MISS) devices fabricated using semi-insulating polysilicon (SIPOS) for the insulator layer are discussed. The SIPOS MISS devices have an active area of 4.5 mm² and can carry in excess of 8 A. The typical switching voltage of these devices is 20 to 25 V with a negative temperature coefficient. They have a typical switching time of 200 ns and a very fast turn-off time. No degradation in device performance is observed after high current pulsing. Power SIPOS MISS devices offer an alternative to conventional four-layer switching devices, yielding faster switching characteristics while maintaining process compatibility     

一种新型渐变掺杂理想欧姆接触SiGeC/Si功率二极管

将新器件结构与新型半导体材料相结合,提出了一种新型的n-区三层渐变掺杂理想欧姆接触型p (SiGeC)-n-n 异质结功率二极管,并对n-区的杂质分布梯度进行了优化.基于MEDICI,给出了该结构的关键物理参数模型,并在此基础上对新结构的设计思路和工作原理进行了全面分析.结果表明,与常规理想欧姆接触结构相比,该新结构在保持快而软反向恢复特性的前提下,反向阻断电压增加了近一倍,而且正向通态特性也有所改善,很好地实现了功率二极管中Qs-Vf-Ir三者的良好折中.     

一种新型渐变掺杂理想欧姆接触SiGeC/Si功率二极管

将新器件结构与新型半导体材料相结合,提出了一种新型的n-区三层渐变掺杂理想欧姆接触型p+(SiGeC)-n-n+异质结功率二极管,并对n-区的杂质分布梯度进行了优化.基于MEDICI,给出了该结构的关键物理参数模型,并在此基础上对新结构的设计思路和工作原理进行了全面分析.结果表明,与常规理想欧姆接触结构相比,该新结构在保持快而软反向恢复特性的前提下,反向阻断电压增加了近一倍,而且正向通态特性也有所改善,很好地实现了功率二极管中Qs-Vf-Ir三者的良好折中.     

耦合腔激光器的波长调谐与频率调制特性分析

考虑用激光器与调制器直接耦合以及耦合槽的影响，用散射矩阵法及二步等效反射率法，对沟槽耦合腔激光器的波长调谐和频率调制特性的分析表明，数学处理简单，物理图像清晰。     

Numerical analysis of nonlinear small-signal distortion in p-n structures

A numerical method is presented to derive the non-linear distortion of small ac signals in one-dimensional semiconducting diodes from the basic physical equations. The nonlinear input-output relations are obtained in terms of Volterra functional series. The application of this method is illustrated by computational results showing the influence of injection level on harmonic distortion and cross-modulation in p-i-n diodes. Computed values of cross-modulation are compared with measurements.     

p-i-n diodes for the modulation of mm-wave frequencies

A theoretical expression for a figure of merit Qswith respect to RF losses and switching time for p-i-n diodes is given. A fabrication technique is presented which is especially suited to obtain a large Qs. The static, dynamic, and RF data of the diodes and their performance in a 180-degree phase shift modulator at a frequency of 35 GHz and a bitrate of 256 Mbit/s are presented.     

Monolithic millimetre-wave oscillator using a transmission lineperiodically loaded by QWITT diodes

A small-signal analysis of a travelling-wave structure implemented by periodically loading a parallel-plate waveguide with either resonant tunnelling or QWITT diodes is presented. A small-signal equivalent circuits is used to determine the diode impedance as a function of frequency. The periodicity of the structure, i.e. the distance between adjacent diodes, determines the oscillation (resonant) frequency of the circuit. The analysis shows that change in the oscillation frequency through variation in the design width and thickness of the waveguide is minimal. The physical dimensions of the waveguide facilitate monolithic fabrication of the oscillator circuit     

SiGeC/Si功率二极管的数值模拟与分析

将SiGeC技术应用于功率半导体器件的特性改进,提出了一种新型p (SiGeC)-n--n 异质结功率二极管结构.在分析SiGeC合金材料物理特性的基础上,给出了该结构的关键物理参数模型,并在此基础上利用MEDICI模拟,对比分析了C的引入对器件各种电特性的影响.此外,还模拟比较了不同p 区厚度对器件反向漏电流的影响.结果表明:在SiGe/Si功率二极管中加入少量的C,在基本不影响器件正向I-V特性和反向恢复特性的前提下,大大减少了器件的反向漏电流,并且C的加入还减小了器件特性对材料临界厚度的依赖性,提高了器件稳定性.     

4H-silicon carbide Schottky barrier diodes for microwave applications

In this paper, physical models for vertical 4H-silicon carbide (4H-SiC) Schottky diodes are used to develop a design method, where a maximum cutoff frequency for a given punch-through is achieved. The models presented are also used to extract microwave simulator computer-aided design (CAD) models for the devices. A device process was developed and Schottky diodes were fabricated in-house. Characterization of the devices was performed and compared to the theoretical models with good agreement. A demonstrator singly balanced diode mixer was simulated using the developed models. The mixer was fabricated using the in-house developed diodes, and measurements on the mixer show good agreement with the CAD simulations. A conversion loss of 5.2 dB was achieved at 850 MHz, and an excellent IIP/sub 3/ of 31 dBm at 850-MHz RF was measured, at 30-dBm P/sub LO/. These results verify the enhanced properties of the SiC Schottky diode compared to other nonwide bandgap diodes.     

Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes

Dry etch-induced damage has been investigated using Pd Schottky diodes fabricated on n-type GaN surfaces that were etched by reactive ion etching in SiCl₄ and Ar plasmas. Damage was evaluated by measuring the current-voltage, current-voltage-temperature, and capacitance-voltage characteristics of the diodes. A plasma chemistry that includes a chemical etching component (SiCl₄) was found to significantly reduce the degree of induced damage in comparison to a chemistry that uses only a physical component (Ar). The effective barrier height, ideality factor, reverse breakdown voltage, reverse leakage current, and the effective Richardson coefficient of diodes etched under various plasma conditions are presented. The degree of etch-induced damage was found to depend strongly on the plasma self-bias voltage but saturates with etch time after an initial two-minute etch period. Rapid thermal annealing was found to be effective in improving the diode characteristics of the etched GaN samples.     

Theory of switching in p-n-insulator (tunnel)-metal devices—II: Avalanche mode

The four layer structure M-I (leaky)-n-p semiconductor displays a current-controlled negative-resistance in its I-V characteristic. The device is named “MISS” which is an acronym for Metal-Insulator-Silicon-Switch. The punch-through mode of operation of the device was treated in an earlier paper (part I). The avalanche-mode of the operation of the device is now considered.In addition to the basic positive feedback action associated with the punch-through MISS, a second positive feedback action is found to exist in the avalanche-mode MISS, which parallels that responsible for switching in an avalanche transistor. The coexistence of these two regenerative feedback actions can, under favourable conditions, result in three stable states in the I-V characteristic of the MISS. A device incorporating this behaviour can be of importance in multi-level logic circuits.     

Modeling and characterization of dopant redistributions in metal and silicide contacts

A shallow n⁺layer of implanted arsenic is used to lower the effective barrier height of PtSi-n-Si and W-n-Si Schottky-barrier diodes. A device model is presented for metal-semiconductor structures that correctly accounts for physical mechanisms involved in the interface formation and dopant redistribution. Image and dipole barrier lowering as well as silicon consumption and dopant pile,up effects present in metal and silicide contacts are included in the model. A theoretical model is presented to calculate the electric-field dependence of metallic charge penetration into the semiconductor energy gap and experimental results are extracted from the measured electrical characteristics of Schottky-barrier diodes. The barrier height and ideality factor are studied at various temperatures and the theoretical calculations are shown to be in good agreement with the experimental results.     

Model for the switching voltage of miss devices based on an analogy with the thyristor

A model for the switching voltage of MISS devices based on an analogy with the thyristor is presented. The weak dependence of the switching voltage on the doping of the intermediate semiconductor layer in the range of medium and heavy doping levels (?1015cm?3) can be quantitatively accounted for, and comparisons are made with published data from several sources.     

Physical understanding and optimum design of high-powermillimeter-wave pulsed IMPATT diodes

A physical understanding of the specific mode of operation of high-power millimeter-wave pulsed IMPATT diodes is derived from a self-consistent numerical model. It is shown theoretically that there exists a uniformly avalanching p-i-n-like mode in high-current-density, pulsed silicon double-drift IMPATT diodes, as has been previously suggested. An optimum symmetrical flat doping-profile double-drift structure for 100-GHz operation is presented. It could deliver more than 40 W of available peak power with a 10% conversion efficiency accounting for circuit losses, at a safe junction temperature rise. The theoretical results allow an optimum design of the 94-GHz IMPATT structure for peak output power in excess of 50 W under low duty cycle     

GaAs PIN二极管的新等效电路模型

基于物理原理的分析,提出了GaAs PIN二极管的一种新等效电路模型.GaAs PIN二极管被分成P n-结、基区和n-n 结三部分分别建模,总的模型由三个子模型组成,从而极大地提高了模型的准确性.相应的模型参数提取过程不要求苛刻的实验或测试条件,简便易操作.研制了15组GaAs PIN二极管来验证模型,测试结果表明模型准确地反映了GaAs PIN二极管的正向和反向特性.