Thiazole Imide‐Based All‐Acceptor Homopolymer: Achieving High‐Performance Unipolar Electron Transport in Organic Thin‐Film Transistors

High‐performance unipolar n‐type polymer semiconductors are critical for advancing the field of organic electronics, which relies on the design and synthesis of new electron‐deficient building blocks with good solubilizing capability, favorable geometry, and optimized electrical properties. Herein, two novel imide‐functionalized thiazoles, 5,5′‐bithiazole‐4,4′‐dicarboxyimide (BTzI) and 2,2′‐bithiazolothienyl‐4,4′,10,10′‐tetracarboxydiimide (DTzTI), are successfully synthesized. Single crystal analysis and physicochemical study reveal that DTzTI is an excellent building block for constructing all‐acceptor homopolymers, and the resulting polymer poly(2,2′‐bithiazolothienyl‐4,4′,10,10′‐tetracarboxydiimide) (PDTzTI) exhibits unipolar n‐type transport with a remarkable electron mobility (μ_e) of 1.61 cm² V^?1 s^?1, low off‐currents (I_off) of 10^?10?10^?11 A, and substantial current on/off ratios (I_on/I_off) of 10⁷?10⁸ in organic thin‐film transistors. The all‐acceptor homopolymer shows distinctive advantages over prevailing n‐type donor?acceptor copolymers, which suffer from ambipolar transport with high I_offs > 10^?8 A and small I_on/I_offs < 10⁵. The results demonstrate that the all‐acceptor approach is superior to the donor?acceptor one, which results in unipolar electron transport with more ideal transistor performance characteristics.     

Charge Transport in Disordered Organic Materials and Its Relevance to Thin‐Film Devices: A Tutorial Review

Semiconducting polymers and small molecules form an extremely flexible class of amorphous materials that can be used in a wide range of applications, some of which are display, radio‐frequency tags, and solar cells. The rapid progress towards functional devices is occurring despite the lack of sufficient understanding of the physical processes and very little experience in device engineering. This tutorial review aims to provide sufficient intuitive background to draw more researchers to look into the fundamental aspects of device physics and engineering.     

Metal‐Guided Selective Growth of 2D Materials: Demonstration of a Bottom‐Up CMOS Inverter

2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large‐area electronics and circuits strongly relies on wafer‐scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal‐guided selective growth (MGSG), is reported. The success of control over the transition‐metal‐precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p‐ and n‐type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom‐up complementary metal‐oxide‐semiconductor inverter based on p‐type WSe₂ and n‐type MoSe₂ is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position.     

Inside Front Cover: Electronic Transport through Electron‐Doped Metal Phthalocyanine Materials (Adv. Mater. 3/2006)

Transport measurements for different electron‐doped metal–phthalocyanine (MPc) materials are reported by Morpurgo and co‐workers on p. 320. It is experimentally demonstrated that for these doped MPc materials, increasing the doping level results first in a metallic state and, subsequently, in the re‐entrance of an insulating state. The artist's impression on the inside cover shows an MPc film situated between two electrodes and exposed to a flux of alkali atoms in vacuum. The alkali atoms intercalate and donate electrons to the molecular material.